AN600
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Board version V2.2
About this document
Scope and purpose
This application note describes the function, circuitry, and performance of the BGT60TR13C shield, part of
Infineon’s XENSIV™ 60 GHz radar system platform. The shield provides the supporting circuitry to the on-board
BGT60TR13C monolithic microwave integrated circuit (MMIC) Infineon’s 60 GHz radar chipset with antenna-inpackage (AIP). The shield offers a digital interface for configuration and transfer of the acquired radar data to a
microcontroller board, e.g., Radar Baseboard MCU7.
Intended audience
The intended audience for this document are design engineers, technicians, and developers of electronic
systems, working with Infineon’s XENSIV™ 60 GHz radar sensors.
Related documents
Additional information can be found in the documentation provided with the Radar Development Kit tool in the
Infineon Developer Center (IDC), or from www.infineon.com/60GHz.
Application note
www.infineon.com
Please read the sections “Important notice” and “Warnings” at the end of this document
Revision 2.40
2023-02-14
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
60 GHz radar system platform
Table of contents
About this document ....................................................................................................................... 1
Table of contents ............................................................................................................................ 2
1
1.1
1.2
Introduction .......................................................................................................................... 3
60 GHz radar system platform ................................................................................................................ 3
Key features ............................................................................................................................................. 3
2
2.1
System specifications ............................................................................................................. 4
Typical current consumption ................................................................................................................. 4
3
3.1
3.2
3.3
3.4
3.5
3.6
Hardware description ............................................................................................................. 5
Overview .................................................................................................................................................. 5
BGT60TR13C MMIC .................................................................................................................................. 6
Sensor supply .......................................................................................................................................... 7
Oscillator.................................................................................................................................................. 8
Connectors .............................................................................................................................................. 8
EEPROM ................................................................................................................................................. 10
4
Firmware .............................................................................................................................11
5
5.1
5.2
Measurement results .............................................................................................................12
Radiation pattern .................................................................................................................................. 12
Phase noise measurements .................................................................................................................. 14
6
6.1
6.2
Frequency band and regulations .............................................................................................16
Regulations in Europe ........................................................................................................................... 16
Regulations in the United States of America........................................................................................ 16
References ....................................................................................................................................17
Revision history.............................................................................................................................18
Disclaimer.....................................................................................................................................19
Application note
2
Revision 2.40
2023-02-14
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Introduction
1
Introduction
1.1
60 GHz radar system platform
The 60 GHz radar system platform is the demo platform for Infineon’s 60 GHz radar solutions. It consists of the
Radar Baseboard MCU7 as the microcontroller board and a radar sensor board, like the BGT60TR13C shield for
Infineon’s 60 GHz radar sensor chip. This application note focuses on the BGT60TR13C shield. Detailed
information about the Radar Baseboard MCU7 can be found in the corresponding application note [1].
Figure 1 illustrates the Radar Baseboard MCU7 with the BGT60TR13C shield. Both boards have markers. These
markers must be aligned to correctly plug in a sensor board.
a)
Radar Baseboard MCU7
Markers
Sensor board
b)
Figure 1
Radar Baseboard MCU7 with the BGT60TR13C shield (a) unplugged or (b) plugged in
1.2
Key features
The BGT60TR13C shield is optimized for fast prototyping designs and system integrations as well as initial
product feature evaluations. The board offers developers the flexibility to choose their own platform
depending on their preferred use cases. The sensor supports various use cases, serving a broad application
spectrum such as presence detection, proximity sensing, people counting and tracking, gesture sensing and
material classification. These use cases target applications such as smartphones, notebooks, TVs, smart
speakers, wearables, smart home and building automation systems for comfort, energy savings and
security/safety functions. Presence detection may only require 1 mW of power in the sensor under certain
circumstances.
Some key features of the BGT60TR13C shield are as follows:
• Minimized form factor of 17 x 12.7 mm² RF board with Antenna-in-Package (AIP) of 6.5 x 5.0 x 0.85 mm³
• Flexible platform selection
• Variable connector options, and option to solder onto other PCBs
• Highly flexible configuration on FMCW modulation
• Power consumption can be optimized according to use case
Application note
3
Revision 2.40
2023-02-14
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
System specifications
2
System specifications
2.1
Typical current consumption
The typical current consumption of the whole 60 GHz radar sensor platform, consisting of a Radar Baseboard
MCU7 and a BGT60TR13C shield, can be found in Table 1. When the MCU is in reset, the power consumption
stays below 10 mW. Without a sensor, approximately 150 mW are consumed, and with a BGT60TR13C shield,
the power consumption can be as high as 1.5 W in continuous wave (CW) operation. The BGT60TR13C radar
sensor’s share of the total power can reach up to 350 or 400 mW in CW operation. However, the exact value will
depend on the operating condition of the radar sensor. As the sensor is typically operated in duty-cycle mode,
the actual power consumption figures tend to be much lower. In the design of the radar sensor, the developers
take care to optimize power saving in duty-cycle operation. For this reason, most use cases will consume less
than 100 mW.
Table 1
Typical current consumption of the 60 GHz radar sensor platform with the BGT60TR13C
shield
Condition
Current
consumption
Power
consumption
Power consumption
BGT60TR13C shield
MCU in reset
~ 2 mA
~ 10 mW
–
No sensor attached
~ 29 mA
~ 150 mW
–
Sensor attached but deactivated
~ 110 mA
~ 550 mW
–
BGT60TR13C shield attached and in CW
operation (maximum power consumption)
290 to 300 mA
~ 1.5 W
~ 350 mW
Application note
4
Revision 2.40
2023-02-14
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
3
Hardware description
This section presents a detailed overview of the BGT60TR13C shield’s hardware building blocks, such as
BGT60TR13C MMIC, power supply, crystal, and board interfaces.
3.1
Overview
Top side
b)
Bottom side
12.7 mm
a)
17 mm
Figure 2
The BGT60TR13C shield
The dimensions of the BGT60TR13C shield printed circuit board (PCB) are 17 mm x 12.7 mm. Mounted on top of
the PCB is a BGT60TR13C, Infineon’s 60 GHz radar sensor with integrated antennas. Because the antennas are
integrated into the BGT60TR13C chip package, the PCB can be manufactured using a standard FR4 laminate.
No special high-frequency (HF) materials are required to build a BGT60TR13C system. The radar sensor is the
central element on the top side of the PCB (U1 in Figure 2a). The bottom side of the PCB features the main
interfaces to the Radar Baseboard MCU7 [1] (P3 and P4 in Figure 2b). The castellated holes on the edges of the
PCB (P1 and P2 in Figure 2a) provide additional access to the most important signals of the BGT60TR13C. By
using these side connectors and removing P3 and P4, the BGT60TR13C shield can be soldered onto other PCBs
as a radar module.
Vdigital
1.8VSensor
3.3Vdigital
EEPROM
I2C
2
3.3Vdigital
LED
RST
IRQ
14
OpenDrainLED
3.3VSensor
1.8VSensor
1.8VSensor
1.8VSensor
1.8VSensor
1.8VSensor
Low pass filter
Low pass filter
Low pass filter
Low pass filter
Low pass filter
Application note
VDD,LF
VDD,A
VDD,D
VDD,PLL
VDD,RF
Low pass filter
VDD,OSC
Figure 3
4
BGT60TR13C
SPI
Sensor interface
Castellated
holes conn.
80MHz
quartz
80MHz
Block diagram of the BGT60TR13C shield
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
The block diagram in Figure 3 depicts the concept behind the board. Each of the signals on the castellated
holes’ side connectors corresponds with a signal on the sensor connector. To provide the correct level shifter
voltage for the MCU board, the 1.8 Vsensor supply line is connected with Vdigital (see section 2.3 of reference [1]).
When the shield is plugged into the Radar Baseboard MCU7, the sensor’s supplies are initially deactivated. Only
the EEPROM is powered. The MCU will read the content of the EEPROM’s memory to determine which sensor is
plugged into the sensor interface. Only when the board has been correctly identified are the sensor’s supplies
activated.
Radar sensors are extremely sensitive to noise and crosstalk on the supply domains. Therefore, the different
supply domains must be decoupled. On the BGT60TR13C shield, this is realized by a pi-shaped low-pass filter
on each supply domain (and the oscillator supply). Communication with the radar sensor is mainly performed
via a serial peripheral interface (SPI) bus. Additionally, two more digital lines are required for operation. One
line signals the MCU when new data needs to be fetched. The other allows the MCU to perform a hardware reset
of the sensor. Furthermore, an MCU-controllable LED is mounted on the board. This allows the MCU to signal
for example if the sensor is activated or deactivated.
3.2
BGT60TR13C MMIC
Infineon’s 60 GHz radar sensor with AIP, the BGT60TR13C, serves as the main element on the BGT60TR13C
shield. Integrated into the package chip contains one transmit antenna and three receive antennas. Its
dimensions are 6.5 mm ± 0.1 mm x 5.0 mm ± 0.1 mm, as illustrated by the package outline in Figure 4a and in
more detail in Figure 5a and Figure 5b. Its height is 0.85 mm ± 0.05 mm. When oriented as in the figure, the
radar sensor will emit vertical polarization. Thus, the E-plane is vertical, and the H-plane is horizontal. The freespace wavelength of 60 GHz, denoted by lambda, is about 5 mm. The horizontal spacing between receive
antenna 1 (Rx1) and receive antenna 3 (Rx3) as well as the vertical spacing between receive antenna 2 (Rx2) and
Rx3 is lambda over 2. This enables angular measurements perpendicular to the chips’ surface providing a
horizontal range of ±90 degrees using Rx1 and Rx3 and a vertical range of ±90 degrees using Rx2 and Rx3
respectively. 1
SPI_CLK
GND
GND
SPI_MISO
IRQ
VSSRF
DI
VSSRF
DO
VSSRF
GND
RST
SPI_CSN
VSSRF
VSSRF
VSSRF
VSSRF
CLK
VSSRF
VSSRF
VSSRF
VSSRF
VSSRF
VSSRF
VSSRF
VSSD
VSSD
C1
C9
D1
D9
E1
E9
BGT60TR13C
RST
VDDRF
CSN
VDDRF
VDDD
VSSRF
VDDA
VSSRF
VSSA
VSSRF
VAREF
VSSRF
VDDRF
OSC_CLK
SPI_MOSI
F1
F9
G1
G9
H1
H9
J1
J9
K1
K9
L1
L9
M1
M2
IRQ
VDD_RF
GND
VDD_D
VDD_A
Figure 4
U1
VSSRF
VSSRF
VDDVCO
DIV_TEST
VDDPLL
VDDLF
TP1
GND
M9
M7
M6
M5
M4
M3
DIVOUT
b)
B9
B8
B4
B3
B1
A9
A8
A7
A6
A5
A4
A3
A2
A1
a)
VDD_VCO
VDD_PLL
VDD_LF
OSC_80M
C3
470nF
GND
Package outline (a) and schematics (b) of the BGT60TR13C
The BGT60TR13C has five 1.8 V power domains: analog, digital, radio frequency (RF), phase-locked loop (PLL)
and the voltage-controlled oscillator (VCO) circuitry. Additionally, there is a 3.3 V domain for the loop filter (LF)
– see Figure 4b for details. When the chip is operated with a LF supply voltage below 3.3 V, the maximum VCO
frequency and thus the sensor’s bandwidth will be restricted accordingly.
The signal strength will, of course, decrease with increasing angle – see section 5.1 for details.
Application note
6
1
Revision 2.40
2023-02-14
BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
To reduce the system phase noise and frequency jitter, it is recommended to short the ground contacts of the
different power domains. Therefore, it is essential to have a solid ground plane right underneath the chip with
no signal lines. The suggested pad layout is shown in Figure 5c.
The BGT60TR13C provides the following digital signal lines: oscillator input, four SPI signals, hardware reset
line and interrupt request output (to the MCU). Furthermore, there is a divider output signal. It must be enabled
in the chip and outputs a 1:16 fraction of the RF generated by the radar sensor. This can be used to measure the
phase noise of the sensor – see section 5.2 for details.
b)
5.0 ± 0.1
2
1
4
3
6
5
Top view
c)
5.0 ± 0.1
0.24 ± 0.03
8
7
Side view
9
1
B
C
9
Ø0 .2
7
6.5 ± 0.1
Ø0.3 ± 0.05
G
H
G
H
J
0.33
J
E
F
0.33
E
F
L
8
7
5
C
D
K
6
5
B
D
6.5 ± 0.1
4
3
A
0.5
A
2
0.5
Top view
a)
K
L
M
M
0.33
0.5
0.858 ± 0.05
0.33
0.5
Figure 5
Top (a) and side view (b) of the package and the suggested pad layout of BGT60TR13C (c) –
all dimensions in mm
3.3
Sensor supply
Since radar sensors are sensitive to supply voltage fluctuations or crosstalk between different supply domains,
a low-noise power supply as well as properly decoupled supply rails are vital. The Radar Baseboard MCU7
provides a low-noise supply (see section 2.2 of reference [1]). Figure 6 depicts the schematics of the pi-shaped
low-pass filters employed to decouple the supplies of the different power rails in the chip. High attenuation of
voltage fluctuations in the MHz regime is provided by ferrite beads. For example, the SPI, which runs at up to 50
MHz, induces voltage fluctuations on the digital domain, which would then transfer into the analog domain if
not for the decoupling filters. The ferrite beads are chosen such that they can handle the maximum current of
the sensor of about 200 mA with a low DC resistance (below 0.25 Ω) and an inductance as high as possible. The
high inductance will reduce the cut-off frequency of the low-pass filter, which provides better decoupling for
lower frequencies.
3V3Sensor
C4
10µF
L2
Ferrite Bead
GND
1V8Sensor
C11
10µF
VDD_LF
L4
C5
1µF
GND
VDD_D
1V8Sensor
Figure 6
Application note
C12
1µF
GND
VDD_RF
L3
C6 Ferrite Bead
10µF
GND
Ferrite Bead
GND
1V8Sensor
C7
10µF
C8
1µF
C9
1µF
C10
1µF
GND
L5
VDD_A
C13 Ferrite Bead
100nF
GND
1V8Sensor
C14
10µF
GND
L6
VDD_PLL
Ferrite Bead
C15
1µF
GND
1V8Sensor
L7
VDD_VCO
Ferrite Bead
C16
1µF
GND
Schematics of the low-pass filters
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
3.4
Oscillator
Infineon’s XENSIV™ BGT60TR13C radar sensor requires an oscillator source with a stable reference clock
providing low phase jitter and low phase noise. Therefore, the BGT60TR13C shield employs a Kyocera KC2016
quartz oscillator, which is supplied with 1.8 V as depicted in Figure 7. This oscillator source will output a stable
1.8 V digital signal. The most important parameters for choosing an oscillator are phase jitter and phase noise.
Other oscillators should have similar phase jitter and phase noise as the Kyocera KC2016. Furthermore, the
radar sensor will work most efficiently if the reference oscillator signal is neither too strong nor too weak. The
series resistor R1 reduces the RF level at the sensor so that it is at the ideal range for the BGT60TR13C. If a
redesign of the board contains a different signal source or a vastly different layout is designed, the value of R1
(150 Ω) may have to be adjusted. A higher resistance results in a lower signal at the radar sensor. If the signal
level is too low, the phase noise of the sensor will deteriorate – see section 5.2 for details of phase noise
measurement. With a low resistance, the signal level at the sensor will be high, and in the Range-Doppler
illustration of the radar data, a peak (or ghost target) will appear for low distances.
X1
VDD_OSC
INHx
VCC
GND
OUT
L1
C1
10nF
1V8Sensor
Ferrite Bead
C2
1µF
KC 2016 80MHz
R1
Figure 7
OSC_80M
150Ω
The oscillator circuit on the BGT60TR13C shield
For this reason, the phase noise needs to be measured as well as the radar data needing to be illustrated with a
Range-Doppler plot to optimize the series resistance of the layout. The series resistance must be varied by
soldering different resistors into the circuit. An optimized series resistance will show ideal phase noise behavior
of the sensor paired with a clean Range-Doppler plot. If the phase noise behavior is non-ideal, the resistance
value must be lower. If a peak appears in the Range-Doppler plot, the resistance must be higher.
3.5
Connectors
The BGT60TR13C shield is an extension board of Infineon’s 60 GHz radar system platform without a
microcontroller. The shield must be connected to an MCU board, like the Radar Baseboard MCU7 [1]. The
BGT60TR13C shield contains two different types of connectors to interact with an MCU board, as depicted in
Figure 8a. Visible on the top and bottom side of the PCB are the castellated holes. The contacts on this
connector give access to all signals required for operation of the BGT60TR13C. The pin-out of the connectors
can be seen in Figure 8b as well as on the silkscreen on the bottom side of the PCB (Figure 8a).
The main connector interface of the BGT60TR13C shield contains two Hirose DF40C-20DP-0.4V connectors. On
the MCU side, the Radar Baseboard MCU7 contains the corresponding DF40C-20DS-0.4V connectors. Figure 9
illustrates the pin-out and the pad layout of the Hirose connectors of the BGT60TR13C shield. To provide the
information of the correct digital signal level to the host board, the line Vdigital is shorted with the 1.8 V supply.
On the top side of the shield is a marker that must be aligned with the marker on the MCU board for correct
shield alignment, as depicted in Figure 1.
There is a risk of the Hirose connectors wearing out when regularly plugged into and unplugged from the
shield. To prevent this, do not lift the board on the short side out of the connector, as illustrated in Figure 10a.
Application note
8
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
Instead, simply pull on the long side of the board, thereby tilting the short side, as shown in Figure 10b. This will
significantly increase the lifetime of the connectors.
a)
b)
Castellated holes
Sensor connectors
Bottom side
P1
OpenDrain_LED 1
RST
2
SPI_CSN
3
SPI_MISO
4
SPI_MOSI
5
SPI_CLK
6
IRQ
7
Castellated Holes
P2
1
2
3
3V3digital
4
5
GND
1V8Sensor 6
3V3Sensor 7
GND I2C_SDA
I2C_SCL
Castellated Holes
Figure 8
Connectors on the bottom side of the BGT60TR13C shield (a) and the pin-out of the
castellated hole connectors (b)
a)
GND
3V3digital
I2C_SDA
GND
1V5Sensor
1V5Sensor
1V8Sensor
1V8Sensor
1V8Sensor
3V3Sensor
3V3Sensor
GND
MP1
P3
MP2
1
3
5
7
9
11
13
15
17
19
2
4
6
8
10
12
14
16
18
20
MP3
MP4
GND
GND
I2C_SCL
IRQ
SPI_CLK
SPI_MOSI
SPI_MISO
SPI_DIO2
RST
SPI_CSN
OpenDrain_LED
DACin
ADCout2
ADCout1
GPIO
GND
1V8Sensor
OpenDrain4
OpenDrain3
OpenDrain1
GND
GND
GND
DF40C-20DP-0.4V(51)
MP1
1
3
5
7
9
11
13
15
17
19
MP3
P4
MP2
2
4
6
8
10
12
14
16
18
20
GND
OpenDrain2
GND
3V3digital
MP4
GND
DF40C-20DP-0.4V(51)
b)
GND
3V3digital
I2C_SDA
GND
1V5Sensor
1V5Sensor
1V8Sensor
1V8Sensor
1V8Sensor
3V3Sensor
3V3Sensor
GND
GND
GND
I2C_SCL
BGT_IRQ
SPI_CLK
SPI_MOSI
SPI_MISO
GPIO1
BGT_RST
SPI_CSN
GND
OpenDrain_LED
DAC
GND
ADC2
ADC1
GPIO2
1V8Sensor
OpenDrain4
OpenDrain3
OpenDrain1
GND
GND
GND
GND
OpenDrain2
3V3digital
GND
12mm
Figure 9
Application note
Pinout (a) and pad layout (b) of the sensor connectors on the BGT60TR13C shield
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Hardware description
a)
b)
Figure 10
How to unplug the sensor-to-sensor connectors of the Radar Baseboard MCU7
3.6
EEPROM
The BGT60TR13C shield contains an EEPROM (24CW128X) connected via an I2C interface to store data like a
board identifier. Its schematics can be seen in Figure 11. This EEPROM contains a descriptor indicating the type
of the shield board and MMIC. This is used by the firmware to communicate properly with the shield.
3V3digital
I2C_SCL
R2
2.2kΩ
Figure 11
Application note
U2
VDD
VSS
SCL
SDA
24CW128X
3V3digital
GND
I2C_SDA
R3
2.2kΩ
Schematics of the EEPROM
10
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Firmware
4
Firmware
The Radar Baseboard MCU7 comes with a default firmware which is intended to serve as a bridge between a
host (typically a PC) and the BGT60TR13C RF shield, which is mounted on the sensor connectors.
When the firmware detects a BGT60TR13C shield, it automatically configures the driver layer for the
BGT60TR13C sensor. This includes configuring the chip as well as setting up the MCU to initiate a serial
peripheral interface (SPI) transfer when the BGT signals the availability of new data via the IRQ line. The
firmware will also configure the communication layer so that radar and BGT60TR13C specific messages are
understood.
For more details, please refer to the AN599 - Radar Baseboard MCU7 application note.
Application note
11
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Measurement results
5
Measurement results
5.1
Radiation pattern
The datasheet of the BGT60TR13C only shows the 3-dB values for transmit and receive antenna characteristics.
This subsection shows the radiation pattern of a typical BGT60TR13C radar sensor. Figure 12a and Figure 12c
show the equivalent isotropically radiated power (EIRP) of the transmit antenna in E-plane and H-plane at a
frequency of 60.5 GHz. Figure 12b and Figure 12d illustrate the antenna characteristics of the three receive
antennas in E-plane and H-plane at a frequency of 60.5 GHz.
TX - E-plane at f = 60.5 GHz
a)
-30°
-15°
0°
15°
30°
-45°
-30°
45°
-60°
-25 -20 -15 -10 -5 0 5
Normalized Antenna Gain (dB)
-30°
-45°
-60°
-75°
-90°
Figure 12
0°
15°
15°
90°
30°
45°
60°
75°
-90°
-25 -20 -15 -10 -5 0 5
Normalized Antenna Gain (dB)
RX - H-plane at f = 60.5 GHz
d)
30°
-30°
45°
-45°
60°
-60°
75°
-25 -20 -15 -10 -5 0 5
Normalized Antenna Gain (dB)
RX 1
RX 2
RX 3
-75°
TX - H-plane at f = 60.5 GHz
-15°
0°
-60°
75°
-90°
-15°
-45°
60°
-75°
c)
RX - E-plane at f = 60.5 GHz
b)
-75°
90°
-90°
-15°
0°
15°
90°
RX 1
RX 2
RX 3
30°
45°
60°
75°
-25 -20 -15 -10 -5 0 5
Normalized Antenna Gain (dB)
90°
Radiation Pattern of a typical BGT60TR13C
To analyze the radar radiation pattern, the BGT60TR13C shield is characterized along the E-plane and H-plane
of the sensor. A corner reflector is placed opposite the radar board. The radiation emitted by the radar sensor is
reflected by the corner reflector and measured with the receiver antennas of the radar board. In order to avoid
clutter, the measurement is typically performed in an anechoic RF chamber. The measurement characterizes
the chip in radar operation. Thus, both transmit and receive antennas are part of the measurement. For the
measurement, the standard FMCW radar scheme is followed and the signal at all three receive antennas is
recorded. Then the sensor is rotated into different angles and the measurement is repeated for each angle,
resulting in an angle dependence of the received signals for all three receiver antennas.
Figure 13a shows the measurement set-up that is used. The corner reflector is placed at a distance of 0.4 m
from the BGT60TR13C shield in an anechoic chamber. The board is rotated by ±90 degrees along the E-plane
(Figure 13b) and H-plane (Figure 13c). The results for the E-plane can be seen in Figure 14a and the ones for the
H-plane in Figure 14b. Thereby, a typical board was measured with a frequency chirp from 60.5 to 61.5 GHz and
the results of all three receive antennas are plotted. In the E-plane, a side lobe is visible, and the main lobe is
not perpendicular to the chip surface but rotated by about 25 degrees. This effect is due to the close proximity
of the antennas in the package, and it is stronger for electric fields than for magnetic fields. In the H-plane, no
side lobes are visible, and the main lobe is perpendicular to the chip surface. Figure 14c shows the dependence
of the received signal strength on the used center frequency of the chirp for the direction 0° in E-plane and 0° in
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Measurement results
H-plane. The strongest signal can be received at around 59.5 GHz, and it decreases towards the edges of the
band.
a)
Anechoic RF chamber
0.4 m
Corner reflector
E-plane
b)
Radar board
Axis of rotation
c)
H-plane
Axis of rotation
-90°
-90°
Figure 13
+90°
+90°
Set-up for radiation pattern measurement
E -Plane (fchirp = 60.5 - 61.5 GHz)
a)
-30°
-30°
60°
60°
Rx 1
Rx 2
Rx 3
90° -90°
-30 -25 -20 -15 -10 -5 0
Normalized Received Power (dB)
Normalized
Received Power (dB)
c)
30°
-60°
Rx 1
Rx 2
Rx 3
-90°
90°
-30 -25 -20 -15 -10 -5 0
Normalized Received Power (dB)
0
Rx 1 - 0° E-Plane, 0° H-Plane
Rx 2 - 0° E-Plane, 0° H-Plane
Rx 3 - 0° E-Plane, 0° H-Plane
-1
-2
-3
-4
-5
-6
58.5
Application note
0°
30°
-60°
Figure 14
H-Plane (fchirp = 60.5 - 61.5 GHz)
b)
0°
59
59.5
60
60.5
61
fcenter (GHz)
61.5
62
62.5
63
Radiation pattern measurements of a typical sample for a chirp from 60.5 to 61.5 GHz of Eplane (a) and H-plane (b) as well as the received power in dependence of the frequency (c)
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Measurement results
5.2
Phase noise measurements
The phase noise is a way to characterize the RF signal. Thereby, the signal with an offset from the carrier signal
is put in relation with the carrier itself. In radar data processing with BGT60TR13C, the typical IF frequencies are
in a range from about 10 kHz to 1 MHz. Therefore, the phase noise must be investigated within this range as
well.
The phase noise can be measured directly at the radar frequency, as illustrated in Figure 15a. A horn antenna
placed in front of the sensor receives the radiation emitted by the BGT60TR13C. Then, via a waveguide, the RF
signal is transferred to a harmonic mixer, which in combination with a signal analyzer enables measurement of
the RF signal emitted by the radar sensor. A typical set-up for this measurement could consist of:
• Keysight Signal Analyzer PXA N9030A (with phase noise measurement software)
• Keysight M1970V waveguide harmonic mixer
• Dorado International GH-15-20 horn antenna
The BGT60TR13C also has the option to emit the 1:16 divided RF signal at the DIV_TEST pin, shown in Figure 4b.
The access to the divided RF signals provides another way to characterize the phase noise of the radar sensor.
For measurement, the user must solder a coaxial cable to test point 1 and a GND pad of the BGT60TR13C,
depicted in Figure 15b. This coaxial cable can then be connected to a signal analyzer like the Keysight N9030A
and the phase noise can be measured with phase noise measurement software.
a)
Signal
analyzer
Harmonic Waveguide
mixer
Horn antenna
b)
Test point 1
Pads with GND potential
Figure 15
Phase Noise (dBc / Hz)
a)
-70
Measurement set-ups for phase noise measurement. Direct RF measurement with a
harmonic mixer (a) and with a divided signal at test point 1 (b).
fCW = 58 GHz
b)
-70
fCW = 60 GHz
c)
-70
-75
-75
-75
-80
-80
-80
-85
-85
-85
-90
10
Figure 16
Application note
100
f (kHz)
1000
-90
10
100
f (kHz)
1000
-90
10
fCW = 63.5 GHz
100
f (kHz)
1000
Phase noise measurements of a typical device with three test frequencies (58 GHz, 60 GHz,
63 GHz)
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Measurement results
Figure 16 shows the phase noise measurement of a typical BGT60TR13C shield over three frequencies (58 GHz,
60 GHz, 63.5 GHz). The measurement was performed directly at the RF signal with a harmonic mixer. The phase
noise is clean for all tested frequencies.
To characterize possible differences between sensor interface 1 and sensor interface 2 of the Radar Baseboard
MCU7, the phase noise of the board was measured at both sensor interfaces with a direct RF measurement and
a harmonic mixer. The results are depicted in Figure 17 and they show that there is no difference between the
different sensor interfaces for different sensor frequencies.
Phase Noise (dBc / Hz)
a)
fCW = 58 GHz
-70
b)
-70
fCW = 60 GHz
c)
-70
-75
-75
-75
-80
-80
-80
-85
-85
-85
-90
10
Sensor Interface 1
Sensor Interface 2
Figure 17
Application note
100
f (kHz)
1000
-90
10
Sensor Interface 1
Sensor Interface 2
100
f (kHz)
1000
-90
10
fCW = 63.5 GHz
Sensor Interface 1
Sensor Interface 2
100
f (kHz)
1000
Phase noise measurements of a typical board on sensor interface 1 and sensor interface 2
with three test frequencies (58 GHz, 60 GHz, 63 GHz)
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XENSIV™ 60 GHz radar system platform
Frequency band and regulations
6
Frequency band and regulations
Infineon’s XENSIV™ BGT60TR13C radar sensor operates in the globally available 60 GHz bands. Typically, there
is a wide band (WB) from 57 to 64 GHz and within it, there is an industrial, scientific, and medical (ISM) band
from 61.0 to 61.5 GHz. However, each country may have differing regulations in term of occupied bandwidth,
maximum allowed radiated power, conducted power, spurious emissions, etc. Therefore, it is strongly
recommended to check the local regulations before designing an end product.
6.1
Regulations in Europe
In Europe, the European Telecommunications Standards Institute (ETSI) [3] defines the regulations. They allow
operation of non-specific short-range devices within the 57 to 64 GHz WB with certain limitations. For more
details on the ETSI standards, please refer to document EN 305 550 [5] as well as the Electronic
Communications Committee’s recommendations [2]. Note that some countries do not follow harmonized
European standards. For this reason, it is recommended to check national regulations for operation within
specific regions and monitor regulatory changes.
6.2
Regulations in the United States of America
In the USA, the Federal Communications Commission (FCC) [4] defines standards and regulation. The
unlicensed WB covers 57 to 64 GHz, and you can operate a field disturbance sensor anywhere within this band
within allowed power limits for certain applications. For details, refer to FCC section number 15.255 [6].
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
References
References
[1]
Infineon Technologies AG. AN599: Radar Baseboard MCU7
[2]
Committee, E. C. (n.d.). ERC Recommendation. Retrieved 03 12, 2019, from
https://www.ecodocdb.dk/download/25c41779-cd6e/Rec7003.pdf
[3]
European Telecommunications Standards Institute. (n.d.). Retrieved 03 12, 2019, from
https://www.etsi.org/
[4]
Federal Communications Commission. (n.d.). Retrieved 03 12, 2019, from https://www.fcc.gov/
[5]
Institute, E. T. (n.d.). EN 305 500. Retrieved 03 12, 2019, from
https://www.etsi.org/deliver/etsi_en/305500_305599/305550/02.01.00_20/en_305550v020100a.pdf
[6]
Regulations, E. C. (n.d.). §15.255. Retrieved 03 12, 2019, from https://www.ecfr.gov/cgi-bin/textidx?SID=a484297320706bbafb187c022e7b3c0c&mc=true&node=se47.1.15_1255&rgn=div8
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BGT60TR13C shield
XENSIV™ 60 GHz radar system platform
Revision history
Revision history
Document
revision
Date
Description of changes
1.00
2019-04-01
Initial version
2.00
2019-07-01
Added Vdigital for level shifter supply of the host board
2.10
2019-10-21
Fixed Typos in section 2.1
Changed schematics (symbol) in Figure 9
Added section 5.1 for antenna radiation pattern
Changed figures 17 and 18 with the correspond text in section 5.2
2.20
2021-11-15
Updated BGT60TR13C shield to version 2.2
2.30
2022-11-07
Fixed Typos
Removed Applications and use cases section.
Updated References section
2.40
2023-02-14
Miscellaneous document cleanup updates
Application note
18
Revision 2.40
2023-02-14
Disclaim er
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2023-02-14
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2023 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
Email: erratum@infineon.com
Document reference
AN_1907_PL32_1907_091722
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