ESD105B102ELSE6327XTSA1 数据手册
TVS Diodes
Transient Voltage Suppressor Diodes
ESD105-B1-02 Series
Low Capacitance & Low Clamping Bi-directional ESD / Transient Protection Diodes
ESD105-B1-02ELS
ESD105-B1-02EL
Data Sheet
Revision 1.0, 2013-12-12
Final
Power Management & Multimarket
ESD105-B1-02 Series
Revision History: Rev. 04, 2013-09-24
Page or Item
Subjects (major changes since previous revision)
Revision 1.0, 2013-12-12
All
Status change to Final
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SMARTi™,
SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-06-09
Final Data Sheet
2
Revision 1.0, 2013-12-12
ESD105-B1-02 Series
Low Capacitance & Low Clamping Bi-directional ESD / Transient Protection
1
Low Capacitance & Low Clamping Bi-directional ESD / Transient
Protection Diodes
1.1
Features
•
•
•
•
•
•
ESD / Transient protection of signal lines exceeding standard:
– IEC61000-4-2 (ESD): ±30 kV air / ±25 kV contact discharge
– IEC61000-4-4 (EFT): ±50 A (5/50 ns)
– IEC61000-4-5 (Surge): ±5 A (8/20 μs)
One-line diode with ultra-small form factor down to 0.62 x 0.32 x 0.31 mm² (0201) package size
Bi-directional, symmetrical working voltage up to: VRWM = ±5.5 V
Low capacitance CL = 0.3 pF (typical)
Very low clamping voltage, low dynamic resistance: RDYN = 0.36 Ω (typ.)
Pb-free package (RoHS compliant) and halogen free package
1.2
•
•
Application Examples
USB 3.0. 10/100/1000 Ethernet, Firewire, DVI, HDMI, S-ATA, Display Ports
Mobile HDMI Link, MDDI, MIPI, SWP, NFC
1.3
Product Description
Pin 1
Pin 2
Pin 1 marking
(lasered)
Pin 1
TSLP-2
Pin 1
Pin 2
Pin 2
TSSLP-2
a) Pin configuration
b) Schematic diagram
P G-TS (S)LP -2_Dual_Diode_S erie_P inConf_and_S c hematic Diag. v s d
Figure 1
Pin configuration and Schematic diagram
Table 1
Ordering Information
Type
Package
Configuration
Marking code
ESD105-B1-02ELS
TSSLP-2-4
1 line, bi-directional
N
ESD105-B1-02EL
TSLP-2-20
1 line, bi-directional
N
Final Data Sheet
3
Revision 1.0, 2013-12-12
ESD105-B1-02 Series
Characteristics
2
Characteristics
Table 2
Maximum Ratings at TA = 25 °C, unless otherwise specified 1)
Parameter
Symbol
2)
ESD
air discharge
contact discharge
Unit
Min.
Typ.
Max.
–
–
–
–
30
25
–
–
5
–
–
70
kV
VESD
Peak pulse current (tp = 8 / 20 μs)3) IPP
Peak pulse power
tp = 8 / 20 μs
Values
3)
A
W
PPK
Operating temperature
TOP
-55
–
125
°C
Storage temperature
Tstg
-65
–
150
°C
1) Device is electrically symmetrical
2) VESD according to IEC61000-4-2
3) IPP according to IEC61000-4-5
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
2.1
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Figure 2
!"#
Definitions of electrical characteristics
Final Data Sheet
4
Revision 1.0, 2013-12-12
ESD105-B1-02 Series
Characteristics
Table 3
DC Characteristics at TA = 25 °C, unless otherwise specified 1)
Parameter
Symbol
Values
Unit
Note /
Test Condition
Min.
Typ.
Max.
Reverse working voltage VRWM
–
–
5.5
V
Reverse current
IR
–