TVS Diode
Transient Voltage Suppressor Diode
ESD5V3U4U-HDMI
Uni-directional Ultra-low Capacitance ESD / Transient Protection Array
ESD5V3U4U-HDMI
Data Sheet
Revision 1.1, 2012-07-03
Final
Powermanagement & Multi-Market
Edition 2012-07-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
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ESD5V3U4U-HDMI
Revision History Revision 1.0, 2012-06-30
Page or Item
Subjects (major changes since previous revision)
Revision 1.1, 2012-07-03
7
Figure 2-1
Trademarks of Infineon Technologies AG
AURIX™, BlueMoon™, C166™, CanPAK™, CIPOS™, CIPURSE™, COMNEON™, EconoPACK™, CoolMOS™,
CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,
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MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PRIMARION™,
PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™,
SINDRION™, SIPMOS™, SMARTi™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™,
TRENCHSTOP™, TriCore™, X-GOLD™, X-PMU™, XMM™, XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,
PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR
development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,
FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of
Hilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared Data
Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of
MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. Mifare™ of NXP. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™
of MURATA MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc.,
OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc.
RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc.
SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden
Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA.
UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™
of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of
Diodes Zetex Limited.
Last Trademarks Update 2010-10-26
FinalData Sheet
3
Revision 1.1, 2012-07-03
ESD5V3U4U-HDMI
Uni-directional Ultra-low Capacitance ESD / Transient Protection Array
1
Uni-directional Ultra-low Capacitance ESD / Transient Protection
Array
1.1
Features
•
•
•
•
•
•
•
ESD / Transient protection of high speed data lines exceeding:
– IEC61000-4-2 (ESD): ±20 kV (air / contact)
– IEC61000-4-4 (EFT): 2.5 kV / 50 A (5/50 ns)
– IEC61000-4-5 (surge): 3 A (8/20 μs)
Maximum working voltage: VR = 5.3 V
Very low reverse current: IR < 1 nA typ.
Extremely low capacitance: 0.4 pF typ. (I/O to GND)
Four-lines protection array with pad pitch = 0.5 mm
Flow-through design for optimal PCB layout of differential lines
Pb-free package (RoHS compliant) and halogen free package
1.2
•
•
•
Application Examples
Protection of high speed digital interfaces like:
HDMI 1.3, HDMI 1.4a, MHL, DisplayPort, S-ATA, DVI, MIPI, MDDI
USB2.0, 10/100/1000 Ethernet, FireWire
2
Product Description
Pin 9
Pin 8
Pin 7
Pin 6
Pin 1
I/O
Pin 2
I/O
Pin 4
I/O
Pin 5
I/O
GND
Pin 1
Pin 2
Pin 3
Pin 4
Pin 5
a) Pin configuration
b) Schematic diagram
Figure 2-1
Pin Configuration and Schematic Diagram
Table 2-1
Ordering information
Type
Package
Configuration
ESD5V3U4U-HDMI
PG-TSLP-9-1
4 lines, uni-directional
FinalData Sheet
Pin 3
4
Marking code
Z1
Revision 1.1, 2012-07-03
ESD5V3U4U-HDMI
Characteristics
3
Characteristics
Table 3-1
Maximum Rating at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
VESD
–
–
20
kV
IPP
–
–
3
A
Operating temperature range
TOP
-40
–
125
°C
Storage temperature
1) VESD according to IEC61000-4-2
2) IPP according to IEC61000-4-5
Tstg
-65
–
150
°C
ESD (air / contact) discharge
1)
Peak pulse current (tp = 8/20 μs)
3.1
2)
Electrical Characteristics at TA = 25 °C, unless otherwise specified
RDYN: Dynamic resistance
IF
VBR: Breakdown voltage
VRWM: Maximum working voltage
IPP
VCL: Clamping voltage
RDYN
VFC: Forward clamping voltage
I PP: Peak pulse current
IF
VCL
VBR
VRWM
VR
VF
I RWM
VF
VFC
IR
VF: Forward voltage
I F: Forward current
RDYN
VR: Reverse voltage
I PP
I R: Reverse current
IR
Diode_Charac teris tic_Curv e_Uni-directional. v sd
Figure 3-1 Definitions of Electrical Characteristics
Table 3-2
DC Characteristics at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Reverse working voltage VRWM
–
–
5.3
V
Breakdown voltage
6
–
–
V
VBR
Note /
Test Condition
IBR = 1 mA
(I/O to GND)
Reverse current
IR
–
10pF), Low (