EVALIHW65R62EDS06JTOBO1

New Product Introduction February 2022 EiceDRIVER™ F3 Enhanced (1ED332x) – Single-channel isolated gate driver family with short-circuit protection OptiMOS™ 5 MOSFET 25 V and 30 V in PQFN 2x2 package OptiMOS™ 5 60 V Power MOSFET in SuperSO8 5x6 (SSO8) package MERUS™ MA5332MS 2-channel analog input class D audio amplifier multichip REF_MA5332BTLSPS reference board EVAL_AUDAMP25 evaluation board 3 kW half bridge induction heating evaluation board with 650 V Reverse Conducting EiceDRIVER™ F3 Enhanced (1ED332x) – Singlechannel isolated gate driver family with short-circuit protection The EiceDRIVERTM F3 Enhanced (1ED332x) family is an isolated gate driver family including protection features, such as short-circuit protection (DESAT), soft-off and active Miller Clamp. The gate driver family provides typical peak output currents of up to 8.5 A. Its short-circuit protection is suitable for both IGBTs and SiC MOSFETs. The active Miller Clamp feature makes it ideal for fastswitching applications with SiC MOSFETs and TRENCHSTOP™ IGBT 7 to avoid parasitic turn-on. The appealing protection feature-set increases system safety in many applications. Features Benefits  For up to 2300 V IGBTs, SiC and Si MOSFETs  Tight part-to-part propagation delay matching (15 ns. max.) allows  +6 A / -8.5 A typical sinking and sourcing peak output current  Precise VCEsat detection (DESAT) with fault output  Soft turn-off after desaturation detection  Active Miller Clamp  40 V absolute maximum output supply voltage  85 ns propagation delay with 35 ns input filter  High common-mode transient immunity CMTI >300 kV/μs  DSO-16 300 mil wide-body package with large creepage distance (>8 mm)  Undervoltage lockout (UVLO) protection with hysteresis (for IGBTs and SiC) minimum deadtime improving system efficiency and decreasing harmonic distortion  UL 1577 VISO = 6.8 kV (rms) for 1 s, 5.7 kV (rms) for 1 min  IEC 60747-17/VDE 0884-11 with VIORM = 1767 V (peak, reinforced)  The precise threshold and timings, combined with UL 1577 certification enable superior application safety  High isolation capability, can be used in 1500 V DC solar inverter application Target applications  Industrial motor drives - compact, standard, premium, servo drives Competitive advantage  Solar inverters, High-voltage isolated DC-DC converters  Future-proof output current capability supporting trends towards  UPS systems higher-power inverters and wide-bandgap devices adoption  Short-circuit protection for both IGBTs and CoolSIC™. Maintains systems to be short-circuit proof also with SiC MOSFETs  EV charging  Energy storage systems  Tight part-to-part propagation delay matching enables reducing dead  Commercial air-conditioning (CAC) -time and therefore supports highest system-efficiency  Commercial induction cooking  Commercial and agricultural vehicles (CAV)  Server and telecom SMPS Block diagram Product collaterals / Online support Product family page Product overview incl. data sheet link OPN SP Number Package 1ED3321MC12NXUMA1 SP005433357 PG-DSO-16 1ED3322MC12NXUMA1 SP005433359 PG-DSO-16 1ED3323MC12NXUMA1 SP005433361 PG-DSO-16 EVAL1ED3321MC12NTOBO1 SP005679300 OptiMOS™ 5 MOSFET 25 V and 30 V in PQFN 2x2 package With the new OptiMOS™ 5 best-in-class 25 V and 30 V in PQFN 2x2 product family, Infineon is setting impressive new standards in small form factor, on-state resistance (RDS(on)) and switching performance. Features Benefits  New best-in-class products  Optimized for high performance applications  150°C junction temperature (Tj)  Optimized for highest efficiency and power density  Industry’s lowest RDS(on) in smallest PQFN 2x2 package  Enables significant space saving  Superior thermal resistance for a PQFN 2x2 package  System cost reduction  100% avalanche tested  Smallest package for highest PCB layout routing flexibility  Pb-free lead plating; RoHS compliant; Halogen-free according to IEC61249-2-21  Very low voltage overshoot  Less paralleling required  Environmentally friendly Target applications Competitive advantage  Wireless charging  Best-in-class RDS(on)max in smallest 2x2 PQFN package for maximium power density  Charger and adapters  System cost reduction  Robots and drones  High continuous current capability up to 55 A  Industrial SMPS  Superior thermal resistance (RthJC=11 K/W)  Server  150°C junction temperature (Tj)  Telecom  Consumer Block diagram: Portable charger Product collaterals / Online support Product page ISK024NE2LM5 Product page ISK036N03LM5 Product overview incl. data sheet link OPN SP Number Package ISK024NE2LM5 SP002296752 PG-VSON-6 ISK036N03LM5 SP002296744 PG-VSON-6 OptiMOS™ 5 60 V Power MOSFET in SuperSO8 5x6 (SSO8) package Infineon’s new best-in-class OptiMOS™ 5 60 V Power MOSFET in SuperSO8 package (ISC010N06NM5) offers low on-state resistance RDS(on) at 25˚C and 175˚C, and high continuous current (up to 330 A). Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Features Benefits  Lowest RDS(on)  Lower conduction losses, higher power density and efficiency  Low RthJC  Less paralleling for system cost reduction  Low reverse recovery charge (Qrr)  Reduced overshoot  Higher operating temperature rating to 175°C  Excellent thermal behavior Target applications Competitive advantage  Telecom  Market leader with best-in-class RDS(on)  Server  Power tools  Low voltage drives Product collaterals / Online support  Class D audio, solar micro inverter, etc. Product page Application example Product overview incl. data sheet link OPN ISC010N06NM5 SP Number Package SP005630896 PG-TSON-8 MERUS™ MA5332MS 2-channel analog input class D audio amplifier multichip module The MERUS™ MA5332MS multichip module offers the same or even higher output power as monolithic alternatives without a heatsink and 50 percent less footprint. This MCM (multi -chip module) solution integrates a dual-channel PWM controller, a high-voltage gate driver, and 4 low RDS(ON) MOSFETs. It includes standard class D protection features for reliable operation over various environmental conditions. The MA5332MS’ 7x7 mm PG- IQFN-42 package showcases the benefit of a small footprint, high power density, and operation without a heatsink. Features Benefits  Integrated Infineon’s best-in-class mid voltage MOSFET with low  Enables heatsink-less solution compared to same power level RDS(ON) monolithic approach  100V high breakdown voltage  Enables high power SE (single-ended) design with reduced bus  Over-current, over-temperature and under-voltage protections with self-reset feature capacitors and output filters from low voltage BTL approach  Simplifies Class D design and eliminates the need for external protection circuitry Target applications Competitive advantage  Soundbar subwoofer  Saves system BOM  Aftermarket car audio system  Higher power density  Active speaker  Simplifies amplifier protection implementation Block diagram Product collaterals / Online support Product page Video Product overview incl. data sheet link OPN MA5332MSXUMA1 SP Number Package SP005582717 PG-IQFN-42 REF_MA5332BTLSPS reference board The REF_MA5332BTLSPS reference board is a one BTL channel, 200 W/ch (4 Ω at 40 V) class D audio power amplifier for home audio systems. This reference board demonstrates how to use MA5332M IC with a single power supply and design an optimum PCB layout using Infineon integrated Class D IC. This reference design does not require additional heatsink or fan cooling for normal operation (oneeighth of continuous rated power). The reference design provides all the required housekeeping power supplies for ease of use. Features Benefits  Output power: 200 W x 1 channels (10 percent THD+N, 4 Ω at 40 V)  Single power supply  Multiple protection features:  Full-bridge output  Over-Current Protection (OCP), high-side and low-side  Over-Temperature Protection (OTP)  PWM modulator: Self-oscillating half-bridge topology with optional clock synchronization Target applications  Audio Product collaterals / Online support Board page User manual Additional product information Product overview incl. data sheet link OPN REFMA5332BTLSPSTOBO1 SP Number SP005576570  High audio quality  Low noise  High efficiency EVAL_AUDAMP25 evaluation board The EVAL_AUDAMP25 MA5332 evaluation board is a twochannel, 200 W/ch (4 Ω at ±36.5 V; with heatsink) halfbridge class D audio power amplifier for Hi-Fi audio systems. This evaluation board demonstrates how to use MA5332 IC, implement protection circuits, and design an optimum PCB layout using Infineon integrated Class D IC. This reference design does not require additional heatsink or fan cooling for normal operation (one-eighth of continuous rated power). Features Benefits  Output power: 200 W x 2 channels (10 percent THD+N, 4 Ω at  Split power supply ±36.5 V)  SE/BTL/PSE output  Multiple protection features:  Over-Current Protection (OCP), high-side and low-side  High audio quality  Over-Voltage Protection (OVP)  Low noise  Under-Voltage Protection (UVP), high-side and low-side  High efficiency  DC Protection(DCP)  Over-Temperature Protection (OTP)  PWM modulator: Self-oscillating half-bridge topology with optional clock synchronization Target applications Product collaterals / Online support  Audio Board page User Manual Safety and operational instructions Product overview incl. data sheet link OPN EVALAUDAMP25TOBO1 SP Number SP005537889 3 kW half bridge induction heating evaluation board with 650 V Reverse Conducting R6 IGBT This induction heating, half-bridge evaluation board EVAL HW65R62EDS06J features the new 650 V reverseconducting R6 family of IGBTs, specifically designed for induction heating and resonant switching applications up to 100 kHz. The evaluation board demonstrates the functionality and key features of the R6 IGBTs in combination with the Infineon level-shift EiceDRIVERTM ICs based on the Infineon SOI technology. Features Benefits  Input voltage: 180 – 270 Vdc  Easy to measure waveforms of IGBT  Max auxiliary supply voltage: 20 Vdc  Easy exchange or replacement of resonant coil  Nominal output power: 3 kW  Easy evaluation of different gate driver ICs  Features the new 650 V reverse-conducting R6 family of IGBTs  Direct access to the device for thermal measurements Target applications Competitive advantage  Induction cooking  The board is reflecting a typical, state-of-the-art induction cooking system based on a half-bridge topology  Inverterized microwaves  This evaluation board can be used during design-in, for evaluation and measurement of characteristics, and proof of data sheet specifications  Unique chance to evaluation Infineon reverse-conducting IGBTs in combination with four different gate driver ICs (EiceDRIVER™ 2ED2x families) Block diagram: Product collaterals / Online support Board page Application note Video Board overview incl data sheet link OPN EVALIHW65R62EDS06JTOBO1 SP Number SP005678248