技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
EconoPACK™3ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode
EconoPACK™3modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
初步数据
PreliminaryData
集电极－发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
栅极－发射极峰值电压
Gate-emitterpeakvoltage
1200
V
IC nom
25
A
ICRM
50
A
Ptot
160
W
VGES
+/-20
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
IC = 25 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,80 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
VCE sat
typ.
max.
1,85
2,15
2,25
2,15
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
0,20
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
1,45
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,05
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
100
nA
td on
0,03
0,03
0,03
µs
µs
µs
tr
0,02
0,025
0,025
µs
µs
µs
td off
0,18
0,27
0,29
µs
µs
µs
tf
0,16
0,17
0,18
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGon = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 25 A, VCE = 600 V
VGE = ±15 V
RGoff = 20 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 1300 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 20 Ω
Tvj = 150°C
Eon
1,70
2,30
2,40
mJ
mJ
mJ
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC = 25 A, VCE = 600 V, LS = 20 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 20 Ω
Tvj = 150°C
Eoff
1,40
2,00
2,15
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,185
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
1
tP ≤ 10 µs, Tvj = 150°C
90
A
0,95 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM
1200
V
IF
25
A
IFRM
70
A
I²t
90,0
80,0
特征值/CharacteristicValues
min.
typ.
max.
1,75
1,75
1,75
2,15
A²s
A²s
正向电压
Forwardvoltage
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
IF = 25 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
39,0
40,0
41,0
A
A
A
恢复电荷
Recoveredcharge
IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
2,50
4,20
4,90
µC
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 25 A, - diF/dt = 1300 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,90
1,50
1,80
mJ
mJ
mJ
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
0,26
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
2
V
V
V
1,35 K/W
K/W
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
模块基板材料
Materialofmodulebaseplate
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
爬电距离
Creepagedistance
VISOL
2,5
kV
Cu
Al2O3
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
7,5
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个模块/permodule
λPaste=1W/(m·K)/λgrease=1W/(m·K)
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
储存温度
Storagetemperature
模块安装的安装扭距
Mountingtorqueformodulmounting
min.
typ.
RthCH
0,009
LsCE
20
nH
RCC'+EE'
2,50
mΩ
Tstg
-40
125
°C
螺丝M5根据相应的应用手册进行安装
ScrewM5-Mountingaccordingtovalidapplicationnote
M
3,00
-
6,00
Nm
重量
Weight
G
300
g
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
3
max.
K/W
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
50
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0,0
0,5
1,0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
45
IC [A]
IC [A]
45
1,5
2,0
VCE [V]
2,5
3,0
3,5
0
4,0
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=20Ω,RGoff=20Ω,VCE=600V
50
8
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
45
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
7
40
6
35
5
E [mJ]
IC [A]
30
25
20
4
3
15
2
10
1
5
0
5
6
7
8
9
VGE [V]
10
11
12
0
13
0
10
20
30
IC [A]
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
4
40
50
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=25A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
12
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
10
ZthJC : IGBT
ZthJC [K/W]
E [mJ]
8
6
0,1
4
2
0
i:
1
2
3
4
ri[K/W]: 0,057 0,3135 0,304 0,2755
τi[s]:
0,01 0,02
0,05 0,1
0
20
40
60
80 100
RG [Ω]
120
140
160
0,01
0,001
180
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=20Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
60
50
IC, Modul
IC, Chip
45
50
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
40
35
40
IF [A]
IC [A]
30
30
25
20
20
15
10
10
5
0
0
200
400
600
800
VCE [V]
1000
1200
0
1400
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
5
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=20Ω,VCE=600V
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=25A,VCE=600V
2,5
2,5
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
1,5
1,5
E [mJ]
2,0
E [mJ]
2,0
1,0
1,0
0,5
0,5
0,0
0
10
20
30
40
0,0
50
IF [A]
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
10
ZthJC : Diode
ZthJC [K/W]
1
0,1
i:
1
2
3
4
ri[K/W]: 0,081 0,4455 0,432 0,3915
τi[s]:
0,01 0,02
0,05 0,1
0,01
0,001
0,01
0,1
t [s]
1
10
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
6
0
20
40
60
80 100
RG [Ω]
120
140
160
180
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
接线图/circuit_diagram_headline
封装尺寸/packageoutlines
preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
7
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
F12-25R12KT4G
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
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请注意安装及应用指南中的信息。
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Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
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Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
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ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
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Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
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preparedby:CM
dateofpublication:2013-11-04
approvedby:RS
revision:2.0
8
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