F3L100R07W2H3B11BPSA1

F3L100R07W2H3_B11 EasyPACK™ module EasyPACK™ module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 100 A / ICRM = 200 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications • • • • Three-level applications Motor drives Solar applications UPS systems Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, T1 / T4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6 Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.0 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature TH=25°C, per switch Typ. Max. 14 nH 2.8 mΩ Tstg -40 125 °C Mounting force per clamp F 40 80 N Weight G Note: 2 Table 3 g Values Unit 650 V 100 A 70 A 200 A ±20 V The current under continuous operation is limited to 25A rms per connector pin IGBT, T1 / T4 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet 39 Tvj = 25 °C 3 TH = 65 °C Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 2 IGBT, T1 / T4 Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.68 2.00 V Tvj = 125 °C 1.86 Tvj = 150 °C 1.89 6.45 V IC = 1.6 mA, VCE = VGE, Tvj = 25 °C 5.05 5.75 VGE = ±15 V, VCE = 400 V 1 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 5.9 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.192 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 5.1 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op Datasheet Tvj = 25 °C Tvj = 25 °C 0.026 Tvj = 125 °C 0.027 Tvj = 150 °C 0.027 Tvj = 25 °C 0.028 Tvj = 125 °C 0.038 Tvj = 150 °C 0.040 Tvj = 25 °C 0.200 Tvj = 125 °C 0.220 Tvj = 150 °C 0.230 Tvj = 25 °C 0.044 Tvj = 125 °C 0.081 Tvj = 150 °C 0.091 IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5.1 Ω, di/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 2.2 Tvj = 125 °C 2.71 Tvj = 150 °C 2.75 IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 5.1 Ω, dv/dt = 5200 V/µs (Tvj = 150 °C) Tvj = 25 °C 1.44 Tvj = 125 °C 2.14 Tvj = 150 °C 2.38 IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 5.1 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 5.1 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 5.1 Ω per IGBT 0.008 mA 100 nA µs µs µs µs mJ mJ 0.782 -40 4 K/W 150 °C Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 3 IGBT, T2 / T3 3 IGBT, T2 / T3 Table 5 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 6 Tvj = 25 °C TH = 65 °C Values Unit 650 V 100 A 70 A 200 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.45 1.90 V Tvj = 125 °C 1.61 Tvj = 150 °C 1.68 6.45 V IC = 1.6 mA, VCE = 20 V, Tvj = 25 °C 5.05 5.75 VGE = ±15 V, VCE = 400 V 1 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 6.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.19 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 1.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) (table continues...) Datasheet tr tdoff tf IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 1.5 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 1.5 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 1.5 Ω 5 Tvj = 25 °C Tvj = 25 °C 0.014 Tvj = 125 °C 0.015 Tvj = 150 °C 0.015 Tvj = 25 °C 0.014 Tvj = 125 °C 0.021 Tvj = 150 °C 0.022 Tvj = 25 °C 0.168 Tvj = 125 °C 0.194 Tvj = 150 °C 0.201 Tvj = 25 °C 0.107 Tvj = 125 °C 0.156 Tvj = 150 °C 0.172 0.032 mA 100 nA µs µs µs µs Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 4 Diode, D1 / D4 Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 4 IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 1.5 Ω, di/dt = 3900 A/µs (Tvj = 150 °C) IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 1.5 Ω, dv/dt = 3600 V/µs (Tvj = 150 °C) Typ. Tvj = 25 °C 0.261 Tvj = 125 °C 0.469 Tvj = 150 °C 0.538 Tvj = 25 °C 2.45 Tvj = 125 °C 3.31 Tvj = 150 °C 3.53 per IGBT Unit Max. mJ mJ 0.782 -40 K/W 150 °C Diode, D1 / D4 Table 7 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 8 I2t Values Unit 650 V 100 A 200 A Tvj = 125 °C 1750 A²s Tvj = 150 °C 1650 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 100 A, VGE = 0 V IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.55 1.95 Tvj = 125 °C 1.50 Tvj = 150 °C 1.45 Tvj = 25 °C 87.9 Tvj = 125 °C 102 Tvj = 150 °C 104 V A (table continues...) Datasheet 6 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 5 Diode, D2 / D3 Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 5 Typ. IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Tvj = 25 °C 3.77 Tvj = 125 °C 7.07 Tvj = 150 °C 8.26 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.835 Tvj = 125 °C 1.52 Tvj = 150 °C 1.73 per diode Unit Max. µC mJ 0.975 -40 K/W 150 °C Diode, D2 / D3 Table 9 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 10 I2t Values Unit 650 V 100 A 200 A Tvj = 125 °C 1750 A²s Tvj = 150 °C 1650 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 100 A, VGE = 0 V IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.55 1.95 Tvj = 125 °C 1.50 Tvj = 150 °C 1.45 Tvj = 25 °C 87.9 Tvj = 125 °C 102 Tvj = 150 °C 104 V A (table continues...) Datasheet 7 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 6 Diode, D5 / D6 Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 6 Typ. IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Tvj = 25 °C 3.77 Tvj = 125 °C 7.07 Tvj = 150 °C 8.26 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3900 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.835 Tvj = 125 °C 1.52 Tvj = 150 °C 1.73 per diode Unit Max. µC mJ 0.975 -40 K/W 150 °C Diode, D5 / D6 Table 11 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 12 I2t Values Unit 650 V 100 A 200 A Tvj = 125 °C 1670 A²s Tvj = 150 °C 1540 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 100 A, VGE = 0 V IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.65 2.15 Tvj = 125 °C 1.55 Tvj = 150 °C 1.50 Tvj = 25 °C 63.8 Tvj = 125 °C 81.4 Tvj = 150 °C 85.3 V A (table continues...) Datasheet 8 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 7 NTC-Thermistor Table 12 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 7 Typ. IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 3.68 Tvj = 125 °C 5.42 Tvj = 150 °C 6.06 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 3400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.512 Tvj = 125 °C 0.994 Tvj = 150 °C 1.16 per diode Unit Max. µC mJ 1.01 -40 K/W 150 °C NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 9 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams 8 Characteristics diagrams Output characteristic (typical), IGBT, T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, T1 / T4 IC = f(VCE) Tvj = 150 °C 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Transfer characteristic (typical), IGBT, T1 / T4 IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, T1 / T4 E = f(IC) RGoff = 5.1 Ω, RGon = 5.1 Ω, VCE = 300 V, VGE = ± 15 V 200 9 180 8 160 7 140 6 120 5 100 4 80 3 60 2 40 1 20 0 0 5 Datasheet 6 7 8 9 10 11 12 0 10 20 40 60 80 100 120 140 160 180 200 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), IGBT, T1 / T4 E = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V Switching times (typical), IGBT, T1 / T4 t = f(IC) RGoff = 5.1 Ω, RGon = 5.1 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 1 18 16 14 12 10 0.1 8 6 4 2 0 0.01 0 5 10 15 20 25 30 35 40 45 50 55 0 Switching times (typical), IGBT, T1 / T4 t = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 20 40 60 80 100 120 140 160 180 200 Transient thermal impedance , IGBT, T1 / T4 Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 5 10 15 20 25 30 35 40 45 50 0.01 0.001 55 11 0.01 0.1 1 10 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, T1 / T4 IC = f(VCE) RGoff = 5.1 Ω, VGE = ±15 V, Tvj = 150 °C Output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) VGE = 15 V 240 200 220 180 200 160 180 140 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0 100 200 300 400 500 600 700 0.0 Output characteristic field (typical), IGBT, T2 / T3 IC = f(VCE) Tvj = 150 °C 1.0 1.5 2.0 2.5 3.0 Transfer characteristic (typical), IGBT, T2 / T3 IC = f(VGE) VCE = 20 V 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 Datasheet 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 12 6 7 8 9 10 11 12 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Transient thermal impedance , IGBT, T2 / T3 Zth = f(t) Switching losses (typical), IGBT, T2 / T3 E = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V 1 7 6 5 4 0.1 3 2 1 0 0.01 0.001 0.01 0.1 1 0 10 Switching losses (typical), IGBT, T2 / T3 E = f(RG) VGE = ±15 V, IC = 100 A, VCE = 300 V 20 40 60 80 100 120 140 160 180 200 Switching times (typical), IGBT, T2 / T3 t = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V, Tvj = 150 °C 10 5.0 4.5 4.0 1 3.5 3.0 2.5 0.1 2.0 1.5 0.01 1.0 0.5 0.0 0.001 0 Datasheet 2 4 6 8 10 12 14 16 0 13 20 40 60 80 100 120 140 160 180 200 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching times (typical), IGBT, T2 / T3 t = f(RG) VGE = ±15 V, IC = 100 A, VCE = 300 V, Tvj = 150 °C Reverse bias safe operating area (RBSOA), IGBT, T2 / T3 IC = f(VCE) RGoff = 1.5 Ω, VGE = ±15 V, Tvj = 150 °C 1 240 220 200 180 160 140 0.1 120 100 80 60 40 20 0 0.01 0 2 4 6 8 10 12 14 16 0 Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 100 200 300 400 500 600 700 Transient thermal impedance, Diode, D1 / D4 Zth = f(t) 10 200 180 160 140 1 120 100 80 0.1 60 40 20 0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.001 2.0 14 0.01 0.1 1 10 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 1.5 Ω, VR = 300 V Switching losses (typical), Diode, D1 / D4 Erec = f(RG) IF = 100 A, VR = 300 V 2.6 2.2 2.4 2.0 2.2 1.8 2.0 1.6 1.8 1.4 1.6 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 180 200 0 Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) 2 4 6 8 10 12 14 16 Transient thermal impedance, Diode, D2 / D3 Zth = f(t) 10 200 180 160 140 1 120 100 80 0.1 60 40 20 0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.001 2.0 15 0.01 0.1 1 10 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 1.5 Ω, VR = 300 V Switching losses (typical), Diode, D2 / D3 Erec = f(RG) IF = 100 A, VR = 300 V 2.6 2.2 2.4 2.0 2.2 1.8 2.0 1.6 1.8 1.4 1.6 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 180 200 0 Forward characteristic (typical), Diode, D5 / D6 IF = f(VF) 2 4 6 8 10 12 14 16 Transient thermal impedance, Diode, D5 / D6 Zth = f(t) 10 200 180 160 140 1 120 100 80 0.1 60 40 20 0 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 Datasheet 16 0.01 0.1 1 10 100 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D5 / D6 Erec = f(IF) RGon = 5.1 Ω, VR = 300 V Switching losses (typical), Diode, D5 / D6 Erec = f(RG) IF = 100 A, VR = 300 V 1.4 1.4 1.3 1.2 1.2 1.1 1.0 1.0 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0.0 0.0 0 20 40 60 80 100 120 140 160 180 200 0 5 10 15 20 25 30 35 40 45 50 55 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 17 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 9 Circuit diagram 9 Circuit diagram Figure 1 Datasheet 18 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 10 Package outlines 10 Package outlines Figure 2 Datasheet 19 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 20 Revision 1.00 2021-12-09 F3L100R07W2H3_B11 EasyPACK™ module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-09-09 Target datasheet 1.00 2021-12-09 Final datasheet Datasheet 21 Revision 1.00 2021-12-09 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-12-09 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA972-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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