F3L150R07W2H3B11BPSA1

F3L150R07W2H3_B11 EasyPACK™ module EasyPACK™ module with Trench/Fieldstop IGBT H3 and rapid diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 150 A / ICRM = 300 A - Increased blocking voltage capability up to 650 V - Low inductive design - Low switching losses - Low VCE,sat • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications • • • • Three-level applications Motor drives Solar applications UPS systems Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, T1 / T4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6 Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.0 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature TH=25°C, per switch Typ. Max. 15 nH 2.8 mΩ Tstg -40 125 °C Mounting force per clamp F 40 80 N Weight G Note: 2 Table 3 g Values Unit 650 V 150 A 85 A 300 A ±20 V The current under continuous operation is limited to 25A rms per connector pin IGBT, T1 / T4 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet 39 Tvj = 25 °C 3 TH = 65 °C Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 2 IGBT, T1 / T4 Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 150 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.68 2.00 V Tvj = 125 °C 1.86 Tvj = 150 °C 1.89 6.45 V IC = 2.4 mA, VCE = VGE, Tvj = 25 °C 5.05 VGE = ±15 V, VCE = 400 V 5.75 1.6 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 9.4 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.28 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 150 A, VCE = 300 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op Datasheet IC = 150 A, VCE = 300 V, VGE = ±15 V, RGon = 7.5 Ω IC = 150 A, VCE = 300 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 150 A, VCE = 300 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 150 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 1800 A/µs (Tvj = 150 °C) IC = 150 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 3600 V/µs (Tvj = 150 °C) Tvj = 25 °C Tvj = 25 °C 0.057 Tvj = 125 °C 0.059 Tvj = 150 °C 0.059 Tvj = 25 °C 0.075 Tvj = 125 °C 0.076 Tvj = 150 °C 0.076 Tvj = 25 °C 0.329 Tvj = 125 °C 0.359 Tvj = 150 °C 0.362 Tvj = 25 °C 0.024 Tvj = 125 °C 0.061 Tvj = 150 °C 0.077 Tvj = 25 °C 5.77 Tvj = 125 °C 6.97 Tvj = 150 °C 7.21 Tvj = 25 °C 2.53 Tvj = 125 °C 3.46 Tvj = 150 °C 3.79 per IGBT 0.009 mA 100 nA µs µs µs µs mJ mJ 0.771 -40 4 K/W 150 °C Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 3 IGBT, T2 / T3 3 IGBT, T2 / T3 Table 5 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 6 Tvj = 25 °C TH = 65 °C Values Unit 650 V 150 A 85 A 300 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 150 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.45 1.90 V Tvj = 125 °C 1.61 Tvj = 150 °C 1.68 6.45 V IC = 2.4 mA, VCE = 20 V, Tvj = 25 °C VGE = ±15 V, VCE = 400 V 5.05 5.75 1.6 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 9.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 650 V, VGE = 0 V 0.29 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 650 V, VGE = 0 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 150 A, VCE = 300 V, VGE = ±15 V, RGon = 1.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) (table continues...) Datasheet tr tdoff tf IC = 150 A, VCE = 300 V, VGE = ±15 V, RGon = 1.5 Ω IC = 150 A, VCE = 300 V, VGE = ±15 V, RGoff = 1.5 Ω IC = 150 A, VCE = 300 V, VGE = ±15 V, RGoff = 1.5 Ω 5 Tvj = 25 °C Tvj = 25 °C 0.015 Tvj = 125 °C 0.017 Tvj = 150 °C 0.017 Tvj = 25 °C 0.022 Tvj = 125 °C 0.028 Tvj = 150 °C 0.029 Tvj = 25 °C 0.186 Tvj = 125 °C 0.211 Tvj = 150 °C 0.216 Tvj = 25 °C 0.094 Tvj = 125 °C 0.133 Tvj = 150 °C 0.147 0.009 mA 100 nA µs µs µs µs Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 4 Diode, D1 / D4 Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 4 IC = 150 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 1.5 Ω, di/dt = 4500 A/µs (Tvj = 150 °C) IC = 150 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 1.5 Ω, dv/dt = 3900 V/µs (Tvj = 150 °C) Typ. Tvj = 25 °C 0.341 Tvj = 125 °C 0.629 Tvj = 150 °C 0.719 Tvj = 25 °C 3.5 Tvj = 125 °C 4.66 Tvj = 150 °C 4.98 per IGBT Unit Max. mJ mJ 0.771 -40 K/W 150 °C Diode, D1 / D4 Table 7 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 8 I2t Values Unit 650 V 100 A 200 A Tvj = 125 °C 1750 A²s Tvj = 150 °C 1650 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 100 A, VGE = 0 V IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.55 1.95 Tvj = 125 °C 1.50 Tvj = 150 °C 1.45 Tvj = 25 °C 92.4 Tvj = 125 °C 102 Tvj = 150 °C 106 V A (table continues...) Datasheet 6 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 5 Diode, D2 / D3 Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 5 Typ. IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Tvj = 25 °C 3.93 Tvj = 125 °C 7.53 Tvj = 150 °C 8.78 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.859 Tvj = 125 °C 1.65 Tvj = 150 °C 1.94 per diode Unit Max. µC mJ 0.975 -40 K/W 150 °C Diode, D2 / D3 Table 9 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 10 I2t Values Unit 650 V 100 A 200 A Tvj = 125 °C 1750 A²s Tvj = 150 °C 1650 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 100 A, VGE = 0 V IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.55 1.95 Tvj = 125 °C 1.50 Tvj = 150 °C 1.45 Tvj = 25 °C 92.4 Tvj = 125 °C 102 Tvj = 150 °C 106 V A (table continues...) Datasheet 7 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 6 Diode, D5 / D6 Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 6 Typ. IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Tvj = 25 °C 3.93 Tvj = 125 °C 7.53 Tvj = 150 °C 8.78 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 4400 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.859 Tvj = 125 °C 1.65 Tvj = 150 °C 1.94 per diode Unit Max. µC mJ 0.975 -40 K/W 150 °C Diode, D5 / D6 Table 11 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 12 I2t Values Unit 650 V 150 A 300 A Tvj = 125 °C 2120 A²s Tvj = 150 °C 1810 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 150 A, VGE = 0 V IF = 150 A, VR = 300 V, VGE = -15 V, -diF/dt = 1800 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.50 2.05 Tvj = 125 °C 1.48 Tvj = 150 °C 1.47 Tvj = 25 °C 41.8 Tvj = 125 °C 69.7 Tvj = 150 °C 75.4 V A (table continues...) Datasheet 8 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 7 NTC-Thermistor Table 12 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 7 Typ. IF = 150 A, VR = 300 V, VGE = -15 V, -diF/dt = 1800 A/µs (Tvj = 150 °C) Tvj = 25 °C 4.93 Tvj = 125 °C 8.81 Tvj = 150 °C 9.27 IF = 150 A, VR = 300 V, VGE = -15 V, -diF/dt = 1800 A/µs (Tvj = 150 °C) Tvj = 25 °C 0.426 Tvj = 125 °C 1.02 Tvj = 150 °C 1.22 per diode Unit Max. µC mJ 0.888 -40 K/W 150 °C NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 9 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams 8 Characteristics diagrams Output characteristic (typical), IGBT, T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, T1 / T4 IC = f(VCE) Tvj = 150 °C 300 300 275 275 250 250 225 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Transfer characteristic (typical), IGBT, T1 / T4 IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, T1 / T4 E = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 300 V, VGE = ± 15 V 300 22.0 275 20.0 250 18.0 225 16.0 200 14.0 175 12.0 150 10.0 125 8.0 100 6.0 75 50 4.0 25 2.0 0 0.0 5 Datasheet 0.5 6 7 8 9 10 11 12 0 10 50 100 150 200 250 300 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), IGBT, T1 / T4 E = f(RG) IC = 150 A, VCE = 300 V, VGE = ± 15 V Switching times (typical), IGBT, T1 / T4 t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 10 50 45 40 35 1 30 25 20 0.1 15 10 5 0 0.01 0 10 20 30 40 50 60 70 80 0 Switching times (typical), IGBT, T1 / T4 t = f(RG) IC = 150 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 50 100 150 200 250 300 Transient thermal impedance , IGBT, T1 / T4 Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 10 20 30 40 50 60 70 0.01 0.001 80 11 0.01 0.1 1 10 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, T1 / T4 IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 150 °C 350 Output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) VGE = 15 V 300 275 300 250 225 250 200 175 200 150 150 125 100 100 75 50 50 25 0 0 0 100 200 300 400 500 600 700 0.0 Output characteristic field (typical), IGBT, T2 / T3 IC = f(VCE) Tvj = 150 °C 1.0 1.5 2.0 2.5 3.0 Transfer characteristic (typical), IGBT, T2 / T3 IC = f(VGE) VCE = 20 V 300 300 275 275 250 250 225 225 200 200 175 175 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0.0 Datasheet 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 12 6 7 8 9 10 11 12 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Transient thermal impedance , IGBT, T2 / T3 Zth = f(t) Switching losses (typical), IGBT, T2 / T3 E = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V 1 10 9 8 7 6 5 0.1 4 3 2 1 0 0.01 0.001 0.01 0.1 1 0 10 Switching losses (typical), IGBT, T2 / T3 E = f(RG) VGE = ±15 V, IC = 150 A, VCE = 300 V 50 100 150 200 250 300 Switching times (typical), IGBT, T2 / T3 t = f(IC) RGoff = 1.5 Ω, RGon = 1.5 Ω, VGE = ±15 V, VCE = 300 V, Tvj = 150 °C 10 7.5 7.0 6.5 6.0 1 5.5 5.0 4.5 4.0 0.1 3.5 3.0 2.5 2.0 0.01 1.5 1.0 0.5 0.0 0.001 0 Datasheet 2 4 6 8 10 12 14 16 0 13 50 100 150 200 250 300 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching times (typical), IGBT, T2 / T3 t = f(RG) VGE = ±15 V, IC = 150 A, VCE = 300 V, Tvj = 150 °C Reverse bias safe operating area (RBSOA), IGBT, T2 / T3 IC = f(VCE) RGoff = 1.5 Ω, VGE = ±15 V, Tvj = 150 °C 10 350 300 250 1 200 150 0.1 100 50 0 0.01 0 2 4 6 8 10 12 14 16 0 Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 100 200 300 400 500 600 700 Transient thermal impedance, Diode, D1 / D4 Zth = f(t) 10 200 180 160 140 1 120 100 80 0.1 60 40 20 0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.001 2.0 14 0.01 0.1 1 10 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 1.5 Ω, VR = 300 V Switching losses (typical), Diode, D1 / D4 Erec = f(RG) IF = 100 A, VR = 300 V 2.8 2.4 2.6 2.2 2.4 2.0 2.2 1.8 2.0 1.6 1.8 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 180 200 0 Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) 2 4 6 8 10 12 14 16 Transient thermal impedance, Diode, D2 / D3 Zth = f(t) 10 200 180 160 140 1 120 100 80 0.1 60 40 20 0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.001 2.0 15 0.01 0.1 1 10 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 1.5 Ω, VR = 300 V Switching losses (typical), Diode, D2 / D3 Erec = f(RG) IF = 100 A, VR = 300 V 2.8 2.4 2.6 2.2 2.4 2.0 2.2 1.8 2.0 1.6 1.8 1.6 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 20 40 60 80 100 120 140 160 180 200 0 Forward characteristic (typical), Diode, D5 / D6 IF = f(VF) 2 4 6 8 10 12 14 16 Transient thermal impedance, Diode, D5 / D6 Zth = f(t) 1 300 250 200 150 0.1 100 50 0 0.0 Datasheet 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0.001 2.0 16 0.01 0.1 1 10 100 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 8 Characteristics diagrams Switching losses (typical), Diode, D5 / D6 Erec = f(IF) RGon = 7.5 Ω, VR = 300 V Switching losses (typical), Diode, D5 / D6 Erec = f(RG) IF = 150 A, VR = 300 V 1.4 1.5 1.3 1.4 1.2 1.3 1.1 1.2 1.1 1.0 1.0 0.9 0.9 0.8 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.3 0.2 0.2 0.1 0.1 0.0 0.0 0 50 100 150 200 250 300 0 10 20 30 40 50 60 70 80 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 17 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 9 Circuit diagram 9 Circuit diagram Figure 1 Datasheet 18 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 10 Package outlines 10 Package outlines Figure 2 Datasheet 19 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 20 Revision 1.00 2021-12-13 F3L150R07W2H3_B11 EasyPACK™ module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-08-24 Initial version 1.00 2021-12-13 Final datasheet Datasheet 21 Revision 1.00 2021-12-13 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-12-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB350-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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