F3L400R07W3S5B59BPSA1

F3L400R07W3S5_B59 EasyPACK™ module EasyPACK™ module with TRENCHSTOP™ 5 and Emitter Controlled 3 diode and PressFIT / NTC Features • Electrical features - VCES = 650 V - IC nom = 200 A / ICRM = 400 A - Low switching losses • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - PressFIT contact technology - Integrated NTC temperature sensor - High power density Potential applications • Solar applications • 3-level-applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, T1.1 / T1.2 / T4.1 / T4.2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6 Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Datasheet 2 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.2 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.2 mm Creepage distance dCreep terminal to terminal 6.8 mm Clearance dClear terminal to heatsink 9.4 mm Clearance dClear terminal to terminal 5.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 400 housing Symbol Note or test condition Min. Stray inductance module LsCE Storage temperature Tstg Mounting torque for modul mounting M Weight G 2 Table 3 Values Unit Typ. Max. 12 - Mounting according to M5, Screw valid application note nH -40 125 °C 1.3 1.5 Nm 78 g Values Unit 650 V 200 A 130 A 400 A ±20 V The current under continuous operation is limited to 25A rms per connector pin. IGBT, T1.1 / T1.2 / T4.1 / T4.2 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 Tvj = 25 °C 3 TH = 65 °C 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 2 IGBT, T1.1 / T1.2 / T4.1 / T4.2 Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.17 1.50 V Tvj = 125 °C 1.20 Tvj = 150 °C 1.21 4.75 V IC = 2 mA, VCE = VGE, Tvj = 25 °C 3.25 VGE = ±15 V, VCE = 400 V 4 0.84 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 14.3 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.05 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 4.7 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Datasheet IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 4.7 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 4.7 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 4.7 Ω Tvj = 25 °C Tvj = 25 °C 0.022 Tvj = 125 °C 0.021 Tvj = 150 °C 0.021 Tvj = 25 °C 0.013 Tvj = 125 °C 0.015 Tvj = 150 °C 0.015 Tvj = 25 °C 0.117 Tvj = 125 °C 0.145 Tvj = 150 °C 0.158 Tvj = 25 °C 0.044 Tvj = 125 °C 0.046 Tvj = 150 °C 0.047 IC = 100 A, VCE = 300 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGon = 4.7 Ω, di/dt = 12.5 vj Tvj = 150 °C kA/µs (Tvj = 150 °C) IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 4.7 Ω, dv/dt = 4400 V/µs (Tvj = 150 °C) mA 100 nA µs µs µs µs 1 mJ 1.4 1.49 Tvj = 25 °C 0.78 Tvj = 125 °C 1.28 Tvj = 150 °C 1.4 per IGBT, λgrease= 3.3 W/(m*K) mJ 0.478 -40 4 0.019 K/W 150 °C 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 3 IGBT, T2 / T3 3 IGBT, T2 / T3 Table 5 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 6 Tvj = 25 °C TH = 65 °C Values Unit 650 V 300 A 255 A 600 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Typ. Max. Tvj = 25 °C 0.88 1.13 V Tvj = 125 °C 0.80 Tvj = 150 °C 0.77 5.75 V IC = 4 mA, VCE = 20 V, Tvj = 25 °C VGE = ±15 V, VCE = 400 V 4.25 5 3.7 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 47.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.168 nF Collector-emitter cut-off current ICES VCE = 650 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 6.8 Ω Rise time (inductive load) Turn-off delay time (inductive load) Datasheet tr tdoff IC = 100 A, VCE = 300 V, VGE = ±15 V, RGon = 6.8 Ω IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 6.8 Ω 5 Tvj = 25 °C Tvj = 25 °C 0.128 Tvj = 125 °C 0.108 Tvj = 150 °C 0.103 Tvj = 25 °C 0.025 Tvj = 125 °C 0.030 Tvj = 150 °C 0.031 Tvj = 25 °C 0.693 Tvj = 125 °C 0.821 Tvj = 150 °C 0.853 0.019 mA 100 nA µs µs µs 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 4 Diode, D1 / D4 Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tf Eon Eoff Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 4 IC = 100 A, VCE = 300 V, VGE = ±15 V, RGoff = 6.8 Ω Typ. Tvj = 25 °C 0.129 Tvj = 125 °C 0.213 Tvj = 150 °C 0.234 Tvj = 25 °C 1.06 Tvj = 125 °C 1.44 Tvj = 150 °C 1.54 IC = 100 A, VCE = 300 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGoff = 6.8 Ω, dv/dt = 760 vj Tvj = 150 °C V/µs (Tvj = 150 °C) 5.24 per IGBT, λgrease= 3.3 W/(m*K) 0.300 IC = 100 A, VCE = 300 V, Lσ = 35 nH, VGE = ±15 V, RGon = 6.8 Ω, di/dt = 2700 A/µs (Tvj = 150 °C) Unit Max. µs mJ mJ 8.18 8.84 -40 K/W 150 °C Diode, D1 / D4 Table 7 Maximum rated values Parameter Symbol Note or test condition Unit 650 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 225 A Continous DC forward current IF 100 A 450 A Tvj = 125 °C 3030 A²s Tvj = 150 °C 2760 Repetitive peak forward current I2t - value Table 8 Parameter IFRM I2t Tvj = 25 °C Values tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Symbol Note or test condition Values Min. Forward voltage Datasheet VF IF = 100 A, VGE = 0 V 6 Unit Typ. Max. Tvj = 25 °C 1.26 1.55 Tvj = 125 °C 1.16 Tvj = 150 °C 1.11 V 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 5 Diode, D2 / D3 Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 5 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) Typ. Tvj = 25 °C 105 Tvj = 125 °C 141 Tvj = 150 °C 151 Tvj = 25 °C 5.94 Tvj = 125 °C 11.6 Tvj = 150 °C 13.5 Tvj = 25 °C 1.3 Tvj = 125 °C 2.58 Tvj = 150 °C 3.01 per diode, λgrease= 3.3 W/(m*K) Unit Max. A µC mJ 0.431 -40 K/W 150 °C Diode, D2 / D3 Table 9 Maximum rated values Parameter Symbol Note or test condition Unit 650 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 225 A Continous DC forward current IF 100 A 450 A Tvj = 125 °C 3030 A²s Tvj = 150 °C 2760 Repetitive peak forward current I2t - value Table 10 Parameter IFRM I2t Tvj = 25 °C Values tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Symbol Note or test condition Values Min. Forward voltage Datasheet VF IF = 100 A, VGE = 0 V 7 Unit Typ. Max. Tvj = 25 °C 1.26 1.55 Tvj = 125 °C 1.16 Tvj = 150 °C 1.11 V 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 6 Diode, D5 / D6 Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 6 IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) IF = 100 A, VR = 300 V, VGE = -15 V, -diF/dt = 2700 A/µs (Tvj = 150 °C) Typ. Tvj = 25 °C 105 Tvj = 125 °C 141 Tvj = 150 °C 151 Tvj = 25 °C 5.94 Tvj = 125 °C 11.6 Tvj = 150 °C 13.5 Tvj = 25 °C 1.3 Tvj = 125 °C 2.58 Tvj = 150 °C 3.01 per diode, λgrease= 3.3 W/(m*K) Unit Max. A µC mJ 0.390 -40 K/W 150 °C Diode, D5 / D6 Table 11 Maximum rated values Parameter Symbol Note or test condition Unit 650 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 300 A Continous DC forward current IF 100 A 600 A Tvj = 125 °C 6610 A²s Tvj = 150 °C 6050 Repetitive peak forward current I2t - value Table 12 Parameter IFRM I2t Tvj = 25 °C Values tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Symbol Note or test condition Values Min. Forward voltage Datasheet VF IF = 100 A, VGE = 0 V 8 Unit Typ. Max. Tvj = 25 °C 1.19 1.47 Tvj = 125 °C 1.07 Tvj = 150 °C 1.02 V 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 7 NTC-Thermistor Table 12 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 7 Typ. IF = 100 A, VR = 300 V, Tvj = 25 °C VGE = -15 V, -diF/dt = 12.5 Tvj = 125 °C kA/µs (Tvj = 150 °C) Tvj = 150 °C 135 IF = 100 A, VR = 300 V, Tvj = 25 °C VGE = -15 V, -diF/dt = 12.5 Tvj = 125 °C kA/µs (Tvj = 150 °C) Tvj = 150 °C 5.05 IF = 100 A, VR = 300 V, Tvj = 25 °C VGE = -15 V, -diF/dt = 12.5 Tvj = 125 °C kA/µs (Tvj = 150 °C) Tvj = 150 °C 0.931 per diode, λgrease= 3.3 W/(m*K) 0.479 Unit Max. A 186 199 µC 12 14.4 mJ 2.64 3.26 -40 K/W 150 °C NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 9 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 IC = f(VCE) Tvj = 150 °C 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.0 transfer characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 IC = f(VGE) VCE = 20 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 E = f(IC) RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = ± 15 V 200 3.00 180 2.75 2.50 160 2.25 140 2.00 120 1.75 100 1.50 80 1.25 1.00 60 0.75 40 0.50 20 0.25 0 0.00 3 Datasheet 4 5 6 7 0 10 20 40 60 80 100 120 140 160 180 200 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams switching losses (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 E = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 t = f(IC) RGoff = 4.7 Ω, RGon = 4.7 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 1 8 7 6 0.1 5 4 3 0.01 2 1 0 0.001 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 140 160 180 200 switching times (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 transient thermal impedance , IGBT, T1.1 / T1.2 / T4.1 / T4.2 t = f(RG) Zth = f(t) IC = 100 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 1 1 0.1 0.1 0.01 0 Datasheet 5 10 15 20 25 30 35 40 45 0.01 0.001 50 11 0.01 0.1 1 10 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBT, T1.1 / T1.2 / T4.1 / T4.2 IC = f(VCE) RGoff = 4.7 Ω, VGE = ±15 V, Tvj = 150 °C capacity characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 100 500 450 400 10 350 300 250 1 200 150 0.1 100 50 0 0.01 0 100 200 300 400 500 600 700 0 gate charge characteristic (typical), IGBT, T1.1 / T1.2 / T4.1 / T4.2 VGE = f(QG) IC = 200 A, Tvj = 25 °C 15 10 20 30 40 50 60 70 80 90 100 0.9 1.0 output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) VGE = 15 V 200 180 10 160 140 5 120 0 100 80 -5 60 40 -10 20 -15 0 0.0 Datasheet 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.0 12 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) Tvj = 150 °C transfer characteristic (typical), IGBT, T2 / T3 IC = f(VGE) VCE = 20 V 200 200 180 180 160 160 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 3 switching losses (typical), IGBT, T2 / T3 E = f(IC) RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE = ± 15 V 5 6 7 switching losses (typical), IGBT, T2 / T3 E = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V 16 12 11 14 10 12 9 8 10 7 8 6 5 6 4 4 3 2 2 1 0 0 0 Datasheet 4 20 40 60 80 100 120 140 160 180 200 0 13 10 20 30 40 50 60 70 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams switching times (typical), IGBT, T2 / T3 t = f(IC) RGoff = 6.8 Ω, RGon = 6.8 Ω, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C switching times (typical), IGBT, T2 / T3 t = f(RG) IC = 100 A, VCE = 300 V, VGE = ± 15 V, Tvj = 150 °C 10 10 1 1 0.1 0.1 0.01 0.01 0 20 40 60 80 100 120 140 160 180 200 0 transient thermal impedance , IGBT, T2 / T3 Zth = f(t) 10 20 30 40 50 60 70 reverse bias safe operating area (RBSOA), IGBT, T2 / T3 IC = f(VCE) RGoff = 6.8 Ω, VGE = ±15 V, Tvj = 150 °C 1 700 600 500 0.1 400 300 0.01 200 100 0.001 0.001 Datasheet 0 0.01 0.1 1 0 10 14 100 200 300 400 500 600 700 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams capacity characteristic (typical), IGBT, T2 / T3 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C gate charge characteristic (typical), IGBT, T2 / T3 VGE = f(QG) IC = 200 A, Tvj = 25 °C 1000 15 10 100 5 10 0 -5 1 -10 -15 0.1 0 10 20 30 40 50 60 70 80 90 100 0.0 forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 switching losses (typical), Diode, D1 / D4 Erec = f(IF) RGon = 6.8 Ω, VCE = 300 V 200 5.0 180 4.5 160 4.0 140 3.5 120 3.0 100 2.5 80 2.0 60 1.5 40 1.0 20 0.5 0 0.0 0.0 Datasheet 0.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 15 20 40 60 80 100 120 140 160 180 200 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams switching losses (typical), Diode, D1 / D4 Erec = f(RG) VCE = 300 V, IF = 100 A transient thermal impedance , Diode, D1 / D4 Zth = f(t) 1 3.6 3.3 3.0 2.7 2.4 2.1 1.8 0.1 1.5 1.2 0.9 0.6 0.3 0.0 0 10 20 30 40 50 60 0.01 0.001 70 forward characteristic (typical), Diode, D2 / D3 IF = f(VF) 0.1 1 10 switching losses (typical), Diode, D2 / D3 Erec = f(IF) RGon = 6.8 Ω, VCE = 300 V 200 5.0 180 4.5 160 4.0 140 3.5 120 3.0 100 2.5 80 2.0 60 1.5 40 1.0 20 0.5 0 0.0 0.0 Datasheet 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 16 20 40 60 80 100 120 140 160 180 200 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams switching losses (typical), Diode, D2 / D3 Erec = f(RG) VCE = 300 V, IF = 100 A transient thermal impedance , Diode, D2 / D3 Zth = f(t) 1 3.6 3.3 3.0 2.7 2.4 2.1 1.8 0.1 1.5 1.2 0.9 0.6 0.3 0.0 0 10 20 30 40 50 60 0.01 0.001 70 forward characteristic of (typical), Diode, D5 / D6 IF = f(VF) 5.5 180 5.0 160 4.5 1 10 4.0 140 3.5 120 3.0 100 2.5 80 2.0 60 Datasheet 0.1 switching losses (typical), Diode, D5 / D6 Erec = f(IF) RGon = 4.7 Ω, VCE = 300 V 200 1.5 40 1.0 20 0.5 0 0.00 0.01 0.0 0.25 0.50 0.75 1.00 1.25 1.50 0 17 20 40 60 80 100 120 140 160 180 200 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 8 Characteristics diagrams switching losses (typical), Diode, D5 / D6 Erec = f(RG) VCE = 300 V, IF = 100 A transient thermal impedance , Diode, D5 / D6 Zth = f(t) 1 4.0 3.5 3.0 2.5 2.0 0.1 1.5 1.0 0.5 0.0 0 5 10 15 20 25 30 35 40 45 0.01 0.001 50 0.01 0.1 1 10 temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 18 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 9 Circuit diagram 9 Circuit diagram Figure 2 Datasheet 19 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module 10 Package outlines Package outlines dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness max. screw-in depth 8,5mm 4x 4x 2x N1 N2 N2 DC- DC- DC- DC- N1 N1 N2 N2 N1 N1 N2 N2 G4.2 DC- DCG4.1 HE4 HE4 HE1 HE1 4,8 0 DC+ DC+ DC+DC+ N1 DC+ DC+ G1.1 G1.2 0 HE3 4,8 8 11,2 14 NTC2 ( 3,4) 17,6 20,8 24 26 Phase1 G2 Phase1 Phase1 HE2 Phase1 Phase1 Phase1 Phase2 Phase2 Phase2 Phase2 Phase2 Phase2 44,43 13,68 16,88 20,08 23,28 26,48 29,68 32,88 36,08 0 4,08 7,28 7,28 4,08 44,43 (99,3 0,1) Distance of threaded holes in heatsink 29,68 26,48 23,28 20,08 16,88 13,68 47,43 0 47,43 NTC1 G3 36,08 62 0,45 14 pcb hole pattern 3,5 26 24 20,8 17,6 5,4 0,1 ( 4,2) 2x 12 according to screw head washer 10 109,9 0,45 (12) - Diameters of drill 1,15mm - Copper thickness in hole 25~50um (16,4) 12,2 0,1 - Details about hole specification for contacts refer to AN2009-01 chapter 2 recommended design hight Figure 3 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 Datasheet 20 1.00 2021-06-25 F3L400R07W3S5_B59 EasyPACK™ module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-04-28 Target datasheet 1.00 2021-06-25 Final datasheet Datasheet 21 1.00 2021-06-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-06-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAS474-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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