F3L600R10W4S7FC22BPSA1

F3L600R10W4S7F_C22 EasyPACK™ module EasyPACK™ module with TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diode and PressFIT / NTC Features • Electrical features - VCES = 950 V - IC nom = 600 A / ICRM = 800 A - CoolSiCTM Schottky diode gen 5 - TRENCHSTOPTM IGBT7 - Tvj,op = 150°C • Mechanical features - Package with CTI > 400 - PressFIT contact technology - Integrated NTC temperature sensor Potential applications • Solar applications • Three-level applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, T1 / T4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 IGBT, T2 / T3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 IGBT, T5 / T6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Diode, D1 / D4 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 6 Diode, D2 / D3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 7 Diode, D5 / D6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 9 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 10 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 11 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25 12 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 Datasheet 2 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.2 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.0 mm Clearance dClear terminal to heatsink 9.2 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 400 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature Tstg Terminal connection torque M Weight G 2 Table 3 Values Unit TH=25°C, per switch - Mounting according to M5, Screw valid application note Typ. Max. 20 nH 1.8 mΩ -40 125 °C 1.3 1.5 Nm 112 g Values Unit 950 V 600 A 310 A 800 A ±20 V The current under continuous operation is limited to 25A rms per connector pin. IGBT, T1 / T4 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 Tvj = 25 °C TH = 65 °C 3 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 2 IGBT, T1 / T4 Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 400 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.63 1.89 V Tvj = 125 °C 1.79 Tvj = 150 °C 1.82 5.85 V IC = 9.25 mA, VCE = VGE, Tvj = 25 °C 4.35 5.10 VGE = ±15 V, VCE = 600 V 1.35 µC Internal gate resistor RGint Tvj = 25 °C 0.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 37.9 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.117 nF Collector-emitter cut-off current ICES VCE = 950 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse Thermal resistance, junction to heat sink tr tdoff tf Eon Eoff RthJH Tvj = 25 °C Tvj = 25 °C 0.145 Tvj = 125 °C 0.145 Tvj = 150 °C 0.145 Tvj = 25 °C 0.068 Tvj = 125 °C 0.068 Tvj = 150 °C 0.068 Tvj = 25 °C 0.914 Tvj = 125 °C 0.967 Tvj = 150 °C 0.991 Tvj = 25 °C 0.054 Tvj = 125 °C 0.059 Tvj = 150 °C 0.061 Tvj = 25 °C 19.3 Tvj = 125 °C 19.3 Tvj = 150 °C 19.3 IC = 400 A, VCE = 500 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGoff = 18 Ω, dv/dt = 3200 vj Tvj = 150 °C V/µs (Tvj = 150 °C) 22.8 24.5 per IGBT, λgrease = 3.3 W/(m·K) 0.182 IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 5 Ω IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 18 Ω IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 18 Ω IC = 400 A, VCE = 500 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5 Ω, di/dt = 4800 A/µs (Tvj = 150 °C) 0.1 mA 100 nA µs µs µs µs mJ mJ 25.4 K/W (table continues...) Datasheet 4 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 3 IGBT, T2 / T3 Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 3 Tvj op Typ. -40 Unit Max. 150 °C IGBT, T2 / T3 Table 5 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Table 6 Tvj = 25 °C TH = 65 °C Values Unit 950 V 400 A 320 A 800 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 400 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.30 1.40 V Tvj = 125 °C 1.35 Tvj = 150 °C 1.35 5.65 V IC = 6.5 mA, VCE = 20 V, Tvj = 25 °C 4.15 4.90 VGE = ±15 V, VCE = 600 V 4.1 µC Internal gate resistor RGint Tvj = 25 °C 0.75 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 49.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.228 nF Collector-emitter cut-off current ICES VCE = 950 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 12 Ω Tvj = 25 °C Tvj = 25 °C 0.445 Tvj = 125 °C 0.409 Tvj = 150 °C 0.400 0.1 mA 100 nA µs (table continues...) Datasheet 5 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 4 IGBT, T5 / T6 Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Rise time (inductive load) Turn-off delay time (inductive load) tr tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tf Eon Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 4 Table 7 IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 12 Ω Tvj = 25 °C 0.099 Tvj = 125 °C 0.113 Tvj = 150 °C 0.117 Tvj = 25 °C 2.293 Tvj = 125 °C 2.409 Tvj = 150 °C 2.439 Tvj = 25 °C 0.203 Tvj = 125 °C 0.396 Tvj = 150 °C 0.452 IC = 400 A, VCE = 500 V, Tvj = 25 °C Lσ = 64 nH, VGE = ±15 V, T = 125 °C RGon = 12 Ω, di/dt = 2700 vj Tvj = 150 °C A/µs (Tvj = 150 °C) 13.9 IC = 400 A, VCE = 500 V, Tvj = 25 °C Lσ = 64 nH, VGE = ±15 V, T = 125 °C RGoff = 27 Ω, dv/dt = 2060 vj Tvj = 150 °C V/µs (Tvj = 150 °C) 60.6 per IGBT, λgrease = 3.3 W/(m·K) 0.254 IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 27 Ω IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 27 Ω Max. µs µs µs mJ 14.5 14.9 mJ 74.3 78.1 -40 K/W 150 °C IGBT, T5 / T6 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Datasheet Typ. Unit Tvj = 25 °C TH = 65 °C 6 Values Unit 950 V 400 A 200 A 800 A ±20 V Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 4 IGBT, T5 / T6 Table 8 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 400 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.85 2.25 V Tvj = 125 °C 2.10 Tvj = 150 °C 2.15 5.85 V IC = 6.5 mA, VCE = VGE, Tvj = 25 °C 4.35 5.10 VGE = ±15 V, VCE = 600 V 0.9 µC Internal gate resistor RGint Tvj = 25 °C 0.75 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 25.2 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.078 nF Collector-emitter cut-off current ICES VCE = 950 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 8 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse Thermal resistance, junction to heat sink tr tdoff tf Eon Eoff RthJH Tvj = 25 °C Tvj = 25 °C 0.167 Tvj = 125 °C 0.169 Tvj = 150 °C 0.170 Tvj = 25 °C 0.096 Tvj = 125 °C 0.102 Tvj = 150 °C 0.104 Tvj = 25 °C 0.862 Tvj = 125 °C 0.919 Tvj = 150 °C 0.940 Tvj = 25 °C 0.054 Tvj = 125 °C 0.058 Tvj = 150 °C 0.060 Tvj = 25 °C 40.8 Tvj = 125 °C 38 Tvj = 150 °C 37.8 IC = 400 A, VCE = 500 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGoff = 27 Ω, dv/dt = 3050 vj Tvj = 150 °C V/µs (Tvj = 150 °C) 25.2 per IGBT, λgrease = 3.3 W/(m·K) 0.281 IC = 400 A, VCE = 500 V, VGE = ±15 V, RGon = 8 Ω IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 27 Ω IC = 400 A, VCE = 500 V, VGE = ±15 V, RGoff = 27 Ω IC = 400 A, VCE = 500 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8 Ω, di/dt = 3100 A/µs (Tvj = 150 °C) 1 mA 100 nA µs µs µs µs mJ mJ 28 29.1 K/W (table continues...) Datasheet 7 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 5 Diode, D1 / D4 Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 5 Tvj op -40 Max. 150 °C Diode, D1 / D4 Table 9 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 10 I2t Values Unit 950 V 300 A 600 A Tvj = 125 °C 3100 A²s Tvj = 150 °C 2900 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op Datasheet Typ. Unit Unit Typ. Max. Tvj = 25 °C 2.60 2.90 Tvj = 125 °C 2.40 Tvj = 150 °C 2.35 VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) Tvj = 25 °C 102 Tvj = 125 °C 147 Tvj = 150 °C 163 VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) Tvj = 25 °C 11.3 Tvj = 125 °C 20.3 Tvj = 150 °C 24.1 Tvj = 25 °C 3.37 Tvj = 125 °C 5.93 Tvj = 150 °C 7.06 IF = 300 A, VGE = 0 V VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) per diode, λgrease = 3.3 W/(m·K) 8 A µC mJ 0.597 -40 V K/W 150 °C Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 6 Diode, D2 / D3 6 Diode, D2 / D3 Table 11 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Table 12 Values Unit 950 V 300 A 600 A Tvj = 125 °C 3100 A²s Tvj = 150 °C 2900 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 7 Table 13 Unit Typ. Max. Tvj = 25 °C 2.60 2.90 Tvj = 125 °C 2.40 Tvj = 150 °C 2.35 VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 2200 A/µs (Tvj = 150 °C) Tvj = 25 °C 146 Tvj = 125 °C 194 Tvj = 150 °C 207 VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 2200 A/µs (Tvj = 150 °C) Tvj = 25 °C 8.45 Tvj = 125 °C 17.9 Tvj = 150 °C 21.3 Tvj = 25 °C 4.22 Tvj = 125 °C 8.19 Tvj = 150 °C 9.6 IF = 300 A, VGE = 0 V VR = 500 V, IF = 300 A, VGE = -15 V, -diF/dt = 2200 A/µs (Tvj = 150 °C) per diode, λgrease = 3.3 W/(m·K) A µC mJ 0.393 -40 V K/W 150 °C Diode, D5 / D6 Maximum rated values Parameter Repetitive peak reverse voltage Symbol Note or test condition VRRM Tvj = 25 °C Values Unit 1200 V (table continues...) Datasheet 9 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 8 NTC-Thermistor Table 13 (continued) Maximum rated values Parameter Symbol Note or test condition Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Table 14 Values Unit 160 A 320 A Tvj = 125 °C 3050 A²s Tvj = 150 °C 2780 tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op 8 Unit Typ. Max. Tvj = 25 °C 1.45 1.75 Tvj = 125 °C 1.75 Tvj = 150 °C 1.85 VR = 500 V, IF = 160 A, VGE = -15 V, -diF/dt = 3500 A/µs (Tvj = 150 °C) Tvj = 25 °C 71.4 Tvj = 125 °C 71.4 Tvj = 150 °C 71.4 VR = 500 V, IF = 160 A, VGE = -15 V, -diF/dt = 3500 A/µs (Tvj = 150 °C) Tvj = 25 °C 1.29 Tvj = 125 °C 1.29 Tvj = 150 °C 1.29 Tvj = 25 °C 0.66 Tvj = 125 °C 0.66 Tvj = 150 °C 0.66 IF = 160 A, VGE = 0 V VR = 500 V, IF = 160 A, VGE = -15 V, -diF/dt = 3500 A/µs (Tvj = 150 °C) per diode, λgrease = 3.3 W/(m·K) A µC mJ 0.430 -40 V K/W 150 °C NTC-Thermistor Table 15 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 B-value B25/50 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 kΩ 5 % 20 mW K (table continues...) Datasheet 10 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 8 NTC-Thermistor Table 15 Parameter (continued) Characteristic values Symbol Note or test condition Values Min. Typ. Unit Max. B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 11 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams 9 Characteristics diagrams Output characteristic (typical), IGBT, T1 / T4 IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, T1 / T4 IC = f(VCE) Tvj = 150 °C 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Transfer characteristic (typical), IGBT, T1 / T4 IC = f(VGE) VCE = 20 V 1.0 2.0 3.0 4.0 Switching losses (typical), IGBT, T1 / T4 E = f(IC) RGoff = 18 Ω, RGon = 5 Ω, VCE = 500 V, VGE = -15 / 15 V 800 70 700 60 600 50 500 40 400 30 300 20 200 10 100 0 0 4.0 Datasheet 5.0 6.0 7.0 8.0 9.0 0 12 100 200 300 400 500 600 700 800 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Switching losses (typical), IGBT, T1 / T4 E = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V Switching times (typical), IGBT, T1 / T4 t = f(IC) RGoff = 18 Ω, RGon = 5 Ω, VGE = ±15 V, VCE = 500 V, Tvj = 150 °C 10 240 220 200 180 1 160 140 120 100 80 0.1 60 40 20 0 0.01 0 20 40 60 80 100 120 140 160 180 0 Switching times (typical), IGBT, T1 / T4 t = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C 1 1 0.1 0.1 0.01 0.01 Datasheet 20 40 60 80 100 120 140 160 200 300 400 500 600 700 800 Transient thermal impedance , IGBT, T1 / T4 Zth = f(t) 10 0 100 0.001 0.001 180 13 0.01 0.1 1 10 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, T1 / T4 IC = f(VCE) RGoff = 18 Ω, VGE = ±15 V, Tvj = 150 °C Capacity characteristic (typical), IGBT, T1 / T4 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 1000 1000 900 100 800 700 10 600 500 400 1 300 200 0.1 100 0 0.01 0 100 200 300 400 500 600 700 800 900 1000 0 Gate charge characteristic (typical), IGBT, T1 / T4 VGE = f(QG) IC = 600 A, Tvj = 25 °C 10 20 30 40 50 60 70 80 90 100 Output characteristic (typical), IGBT, T2 / T3 IC = f(VCE) VGE = 15 V 15 800 700 10 600 5 500 0 400 300 -5 200 -10 -15 0.00 Datasheet 100 0 0.25 0.50 0.75 1.00 1.25 1.50 0.0 14 0.5 1.0 1.5 2.0 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Output characteristic field (typical), IGBT, T2 / T3 IC = f(VCE) Tvj = 150 °C Transfer characteristic (typical), IGBT, T2 / T3 IC = f(VGE) VCE = 20 V 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 0.5 1.0 1.5 2.0 2.5 4.0 Switching losses (typical), IGBT, T2 / T3 E = f(IC) RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V 5.0 6.0 7.0 8.0 Switching losses (typical), IGBT, T2 / T3 E = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V 180 400 360 150 320 280 120 240 90 200 160 60 120 80 30 40 0 0 0 Datasheet 100 200 300 400 500 600 700 800 0 15 30 60 90 120 150 180 210 240 270 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Switching times (typical), IGBT, T2 / T3 t = f(IC) RGoff = 27 Ω, RGon = 12 Ω, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C 100 Switching times (typical), IGBT, T2 / T3 t = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V, Tvj = 150 °C 100 10 10 1 1 0.1 0.1 0.01 0.001 0.01 0 100 200 300 400 500 600 700 800 0 Transient thermal impedance , IGBT, T2 / T3 Zth = f(t) 30 60 90 120 150 180 210 240 270 300 Reverse bias safe operating area (RBSOA), IGBT, T2 / T3 IC = f(VCE) RGoff = 27 Ω, VGE = ±15 V, Tvj = 150 °C 1 1000 900 800 700 0.1 600 500 400 0.01 300 200 100 0.001 0.001 Datasheet 0 0.01 0.1 1 0 10 16 100 200 300 400 500 600 700 800 900 1000 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Capacity characteristic (typical), IGBT, T2 / T3 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C Gate charge characteristic (typical), IGBT, T2 / T3 VGE = f(QG) IC = 400 A, Tvj = 25 °C 1000 15 10 100 5 10 0 1 -5 0.1 -10 -15 0.01 0 10 20 30 40 50 60 70 80 90 100 0.0 Output characteristic (typical), IGBT, T5 / T6 IC = f(VCE) VGE = 15 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Output characteristic field (typical), IGBT, T5 / T6 IC = f(VCE) Tvj = 150 °C 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 Datasheet 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 17 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Transfer characteristic (typical), IGBT, T5 / T6 IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT, T5 / T6 E = f(IC) RGoff = 27 Ω, RGon = 8 Ω, VCE = 500 V, VGE = -15 / 15 V 600 100 90 500 80 70 400 60 300 50 40 200 30 20 100 10 0 0 4.0 5.0 6.0 7.0 8.0 9.0 0 Switching losses (typical), IGBT, T5 / T6 E = f(RG) IC = 400 A, VCE = 500 V, VGE = -15 / 15 V 100 200 300 400 500 600 700 800 Switching times (typical), IGBT, T5 / T6 t = f(IC) RGoff = 27 Ω, RGon = 8 Ω, VGE = ±15 V, VCE = 500 V, Tvj = 150 °C 10 300 270 240 210 1 180 150 120 0.1 90 60 30 0 0.01 0 Datasheet 30 60 90 120 150 180 210 240 270 0 18 100 200 300 400 500 600 700 800 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Switching times (typical), IGBT, T5 / T6 t = f(RG) IC = 400 A, VCE = 500 V, Tvj = 150 °C, VGE = ±15 V Transient thermal impedance , IGBT, T5 / T6 Zth = f(t) 10 1 1 0.1 0.1 0.01 0.01 0 30 60 90 120 150 180 210 240 0.001 0.001 270 Reverse bias safe operating area (RBSOA), IGBT, T5 / T6 IC = f(VCE) RGoff = 27 Ω, VGE = ±15 V, Tvj = 150 °C 0.01 0.1 1 10 Capacity characteristic (typical), IGBT, T5 / T6 C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 1000 1000 900 100 800 700 10 600 500 400 1 300 200 0.1 100 0 0.01 0 Datasheet 100 200 300 400 500 600 700 800 900 1000 0 19 10 20 30 40 50 60 70 80 90 100 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Gate charge characteristic (typical), IGBT, T5 / T6 VGE = f(QG) IC = 400 A, Tvj = 25 °C Forward characteristic (typical), Diode, D1 / D4 IF = f(VF) 15 600 10 500 5 400 0 300 -5 200 -10 100 -15 0.00 0 0.25 0.50 0.75 1.00 0.0 Switching losses (typical), Diode, D1 / D4 Erec = f(IF) RG = 8 Ω, VR = 500 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 70 80 Switching losses (typical), Diode, D1 / D4 Erec = f(RG) IF = 300 A, VR = 500 V 10 9 9 8 8 7 7 6 6 5 5 4 4 3 3 2 2 1 1 0 0 0 Datasheet 100 200 300 400 500 600 0 20 10 20 30 40 50 60 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Transient thermal impedance, Diode, D1 / D4 Zth = f(t) Forward characteristic (typical), Diode, D2 / D3 IF = f(VF) 1 600 500 400 300 0.1 200 100 0 0.01 0.001 0.01 0.1 1 0.0 10 Switching losses (typical), Diode, D2 / D3 Erec = f(IF) RG = 12 Ω, VR = 500 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Switching losses (typical), Diode, D2 / D3 Erec = f(RG) IF = 300 A, VR = 500 V 16 12 14 10 12 8 10 8 6 6 4 4 2 2 0 0 0 Datasheet 100 200 300 400 500 600 0 21 10 20 30 40 50 60 70 80 90 100 110 120 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Transient thermal impedance, Diode, D2 / D3 Zth = f(t) Forward characteristic (typical), Diode, D5 / D6 IF = f(VF) 1 320 280 240 200 160 0.1 120 80 40 0 0.01 0.001 0.01 0.1 1 0.0 10 Switching losses (typical), Diode, D5 / D6 Erec = f(IF) RG = 5 Ω, VR = 500 V 1.0 1.5 2.0 2.5 3.0 Switching losses (typical), Diode, D5 / D6 Erec = f(RG) IF = 160 A, VR = 500 V 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0.0 0 Datasheet 0.5 40 80 120 160 200 240 280 320 0 22 5 10 15 20 25 30 35 40 45 50 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 9 Characteristics diagrams Transient thermal impedance, Diode, D5 / D6 Zth = f(t) Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 1 100000 10000 0.1 1000 0.01 0.001 Datasheet 100 0.01 0.1 1 10 0 100 23 25 50 75 100 125 150 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 10 Circuit diagram 10 Circuit diagram P T1 G1 D1 HE1 HC5 T5 G5 HE5 M1 M2 T6 G6 HE6 HC2 X1 T2 D5 G2 HE2 NTC D2 X2 AC X3 T3 D6 G3 HE3 NTC D3 X4 T4 G4 D4 HE4 N W00173365.04 HC4 Figure 1 Datasheet 24 Revision 1.00 2022-05-06 C B 4x F3L600R10W4S7F_C22 0,2 A EasyPACK™ module 150 0,3 dimensioned f r EJOT Delta PT WN5451 25; choose length according to PCB-thickness; max. screw depth 8,5 mm 4x screws ) 4,2 dimensioned for M5 screw ( Package outlines con 69,75 11 0 69,75 11 Package outlines 26 62 0,5 14 0 14 26 ) 3,4 64,5 67,5 67,5 64,5 0 ( (139,5) distance for threaded holes in heatsink 150 0,5 recommended design height according to screw head washer (1) mid of pressfit-zone according to screw head N (26) 24 20,8 17,6 (16,4) (12) 12,2 0,1 module labeling M2 X4 11,2 P M1 HE3 G3 HC4 X3 HE5 4,8 G5 HE1 G1 0 HC2 G4 11,2 14,4 17,6 20,8 24 (26) HE6 G6 X2 G2 HC4 HC5 X1 HE2 (64,5) 43,35 46,55 49,75 52,95 56,15 24,15 27,35 30,55 33,75 36,95 16 12,8 9,6 6,4 3,2 0 3,2 6,4 9,6 12,8 16 24,15 56,15 52,95 49,75 46,55 43,35 40,15 36,95 33,75 30,55 (64,5) AC W00192655.06 HE4 4,8 - Details about hole specification for contacts refer to AN2009-01 chapter 2 - Copper thickness in hole 25~50um Figure 219 Datasheet 18 17 16 25 15 14 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module 12 Module label code 12 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 26 Revision 1.00 2022-05-06 F3L600R10W4S7F_C22 EasyPACK™ module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-08-17 Target datasheet 1.00 2022-05-06 Final datasheet Datasheet 27 Revision 1.00 2022-05-06 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-05-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAK433-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.