F4200R17N3E4B58BPSA1

F4-200R17N3E4_B58 EconoPACK™3 module EconoPACK™3 module with Trench/Fieldstop IGBT4 and Emitter Controlled diode and NTC Features • Electrical features - VCES = 1700 V - IC nom = 200 A / ICRM = 400 A - Low VCEsat - Tvj op = 150 °C - Trench IGBT 4 - VCEsat with positive temperature coefficient • Mechanical features - Integrated NTC temperature sensor - Standard housing - Solder contact technology - Isolated base plate Potential applications • High power converters • Medium voltage converters Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 6 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 3.4 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 225 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 34 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 3 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 2 mΩ Storage temperature Tstg Mounting torque for modul mounting M Weight G 2 Table 3 - Mounting according to M5, Screw valid application note 125 °C 3 6 Nm 300 g Values Unit 1700 V 200 A 200 A 400 A ±20 V IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet -40 Tvj = 25 °C 3 TC = 80 °C 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth IC = 200 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.95 2.30 V Tvj = 125 °C 2.35 Tvj = 150 °C 2.45 6.25 V IC = 8 mA, VCE = VGE, Tvj = 25 °C 5.35 5.80 QG VGE = ±15 V 2.05 µC Internal gate resistor RGint Tvj = 25 °C 3.2 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 16 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.52 nF Collector-emitter cut-off current ICES VCE = 1700 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 200 A, VCE = 900 V, VGE = ±15 V, RGon = 1.8 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Thermal resistance, junction to case Datasheet tr tdoff tf Eon Eoff ISC RthJC Tvj = 25 °C Tvj = 25 °C 0.247 Tvj = 125 °C 0.270 Tvj = 150 °C 0.275 Tvj = 25 °C 0.076 Tvj = 125 °C 0.079 Tvj = 150 °C 0.080 Tvj = 25 °C 0.460 Tvj = 125 °C 0.610 Tvj = 150 °C 0.649 Tvj = 25 °C 0.290 Tvj = 125 °C 0.511 Tvj = 150 °C 0.580 IC = 200 A, VCE = 900 V, Lσ = 35 nH, VGE = ±15 V, RGon = 1.8 Ω, di/dt = 1250 A/µs (Tvj = 150 °C) Tvj = 25 °C 72.3 Tvj = 125 °C 95.1 Tvj = 150 °C 101 IC = 200 A, VCE = 900 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 1.8 Ω, dv/dt = 5150 V/µs (Tvj = 150 °C) Tvj = 25 °C 38.4 Tvj = 125 °C 63.4 Tvj = 150 °C 71.2 VGE ≤ 15 V, VCC = 1000 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj = 150 °C 770 IC = 200 A, VCE = 900 V, VGE = ±15 V, RGon = 1.8 Ω IC = 200 A, VCE = 900 V, VGE = ±15 V, RGoff = 1.8 Ω IC = 200 A, VCE = 900 V, VGE = ±15 V, RGoff = 1.8 Ω per IGBT 1 mA 100 nA µs µs µs µs mJ mJ A 0.155 4 K/W 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, case to heatsink RthCH Temperature under switching conditions Tvj op 3 per IGBT, λgrease= 1 W/(m*K) Max. 0.0710 -40 K/W 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1700 V 200 A 400 A Tvj = 125 °C 7610 A²s Tvj = 150 °C 6880 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy Thermal resistance, junction to case Datasheet Typ. Unit VF IRM Qr Erec RthJC Unit Typ. Max. Tvj = 25 °C 1.80 2.35 Tvj = 125 °C 1.90 Tvj = 150 °C 1.95 VR = 900 V, IF = 200 A, VGE = -15 V, -diF/dt = 1250 A/µs (Tvj = 150 °C) Tvj = 25 °C 112 Tvj = 125 °C 126 Tvj = 150 °C 129 VR = 900 V, IF = 200 A, VGE = -15 V, -diF/dt = 1250 A/µs (Tvj = 150 °C) Tvj = 25 °C 42.7 Tvj = 125 °C 75.1 Tvj = 150 °C 85.2 VR = 900 V, IF = 200 A, VGE = -15 V, -diF/dt = 1250 A/µs (Tvj = 150 °C) Tvj = 25 °C 21 Tvj = 125 °C 40.8 Tvj = 150 °C 46.9 IF = 200 A, VGE = 0 V per diode A µC mJ 0.269 5 V K/W 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, case to heatsink RthCH Temperature under switching conditions Tvj op 4 per diode, λgrease= 1 W/(m*K) Typ. Unit Max. 0.0680 -40 K/W 150 °C Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Unit 1800 V Repetitive peak reverse voltage VRRM Maximum RMS forward current per chip IFRMSM TC = 95 °C 150 A Maximum RMS current at rectifier output IRMSM TC = 95 °C 150 A IFSM tP = 10 ms Tvj = 25 °C 1460 A Tvj = 150 °C 1260 Tvj = 25 °C 10700 Tvj = 150 °C 7940 Surge forward current I2t - value I2t Table 8 Tvj = 25 °C Values tP = 10 ms A²s Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Max. Tvj = 150 °C, IF = 150 A 1.00 V V(TO) Tvj = 150 °C 0.76 V Slope resistance rt Tvj = 150 °C 1.6 mΩ Reverse current Ir Tvj = 150 °C, VR = 1800 V 1 mA Threshold voltage VF Typ. Unit Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λPaste= 1 W /(m*K) / λgrease= 1 W/(m*K) Temperature under switching conditions Tvj, op Note: Datasheet 0.364 0.0680 -40 K/W K/W 150 °C The current under continuous operation is limited to 50 A rms per connector pin. 6 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 5 NTC-Thermistor 5 NTC-Thermistor Table 9 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 7 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 6 Characteristics diagrams 6 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 400 400 360 360 320 320 280 280 240 240 200 200 160 160 120 120 80 80 40 40 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 switching times (typical), IGBT, Inverter t = f(IC) RGoff = 1.8 Ω, RGon = 1.8 Ω, VCE = 900 V, VGE = -15 / 15 V, Tvj = 150 °C 10 400 360 320 280 1 240 200 160 0.1 120 80 40 0 0.01 5 Datasheet 6 7 8 9 10 11 12 13 0 8 50 100 150 200 250 300 350 400 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 6 Characteristics diagrams switching times (typical), IGBT, Inverter t = f(RG) IC = 200 A, VCE = 900 V, VGE = -15 / 15 V, Tvj = 150 °C switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 1.8 Ω, RGon = 1.8 Ω, VCE = 900 V, VGE = -15 / 15 V 10 350 300 250 1 200 150 0.1 100 50 0.01 0 0 2 4 6 8 10 12 14 16 18 0 transient thermal impedance , IGBT, Inverter Zth = f(t) 50 100 150 200 250 300 350 400 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 1.8 Ω, VGE = ±15 V, Tvj = 150 °C 1 500 400 0.1 300 200 0.01 100 0.001 0.001 Datasheet 0 0.01 0.1 0 1 9 200 400 600 800 1000 1200 1400 1600 1800 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 6 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 200 A, VCE = 900 V, VGE = -15 / 15 V forward characteristic (typical), Diode, Inverter IF = f(VF) 200 400 360 175 320 150 280 125 240 100 200 160 75 120 50 80 25 40 0 0 0 2 4 6 8 10 12 14 16 18 20 0.0 transient thermal impedance , Diode, Inverter Zth = f(t) 0.5 1.0 1.5 2.0 2.5 3.0 switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 900 V, RGon = RGon(IGBT) 1 60 50 40 0.1 30 20 0.01 10 0.001 0.001 Datasheet 0 0.01 0.1 0 1 10 50 100 150 200 250 300 350 400 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 6 Characteristics diagrams switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 900 V, IF = 200 A Forward characteristic (typical), Diode, Rectifier IF = f(VF) 300 80 275 70 250 225 60 200 50 175 40 150 125 30 100 20 75 50 10 25 0 0 0 2 4 6 8 10 12 14 16 18 20 0.0 Transient thermal impedance, Diode, Rectifier Zth = f(t) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 1 100000 10000 0.1 1000 0.01 0.001 Datasheet 100 0.01 0.1 0 1 11 25 50 75 100 125 150 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module 7 Circuit diagram 7 Circuit diagram J Figure 2 8 Package outlines Infineon Figure 3 Datasheet 12 1.00 2021-05-11 F4-200R17N3E4_B58 EconoPACK™3 module Revision history Revision history Document revision Date of release Description of changes 1.00 2021-05-11 Final datasheet Datasheet 13 1.00 2021-05-11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-05-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA153-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.