F423MR12W1M1B76BPSA1

F4-23MR12W1M1_B76 EasyPACK™ module Preliminary datasheet EasyPACK™ module with CoolSiC™ Trench MOSFET and PressFIT / NTC Features • Electrical features - VDSS = 1200 V - IDN = 50 A / IDRM = 100 A - Low switching losses - High current density - Low inductive design • Mechanical features - Integrated NTC temperature sensor - PressFIT contact technology - Rugged mounting due to integrated mounting clamps Potential applications • • • • Welding DC charger for EV DC/DC converter High Frequency Switching application Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Datasheet 2 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 1 Package 1 Package Table 1 Insulation Coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.0 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic Values Parameter Symbol Note or test condition Min. Typ. Max. Stray inductance module LsCE Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G Note: 2 Table 3 14 24 g The current under continuous operation is limited to 25 A rms per connector pin. Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN 2018-09 must be considered to ensure sound operation of the device over the planned lifetime. MOSFET Maximum Rated Values Parameter Symbol Note or test condition Drain-source voltage VDSS Implemented drain current IDN Continuous DC drain current IDDC Tvj = 175 °C, VGS = 15 V Repetitive peak drain current IDRM verified by design, tp limited by Tvjmax Gate-source voltage VGSS Datasheet nH Tvj = 25 °C 3 TH = 65 °C Values Unit 1200 V 50 A 45 A 100 A -10/+20 V 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 2 MOSFET Table 4 Characteristic Values Parameter Symbol Note or test condition Values Min. Drain-source on resistance Gate threshold voltage Total gate charge RDS(on) VGS(th) QG ID = 50 A, VGS = 15 V Typ. Tvj = 25 °C 22.5 Tvj = 125 °C 29.5 Tvj = 150 °C 33 ID = 20 mA, VDS = VGS, Tvj = 25 °C, (tested after 1ms pulse at VGS = +20 V) VDS = 800 V, VGS = -5/+15 V 3.45 4.5 Unit Max. mΩ 5.55 V 0.124 µC 2 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance CISS f = 1 MHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 3.68 nF Output capacitance COSS f = 1 MHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 0.22 nF Reverse transfer capacitance Crss f = 1 MHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 0.028 nF COSS stored energy EOSS VDS = 800 V, VGS = -5/+15 V, Tvj = 25 °C 88 µJ Drain-source leakage current IDSS VDS = 1200 V, VGS = -5 V Tvj = 25 °C 0.2 Gate-source leakage current IGSS VDS = 0 V, Tvj = 25 °C VGS = 20 V Turn-on delay time (inductive load) td on ID = 50 A, RGon = 8.2 Ω, VDS = 600 V, VGS = -5/+15 V Tvj = 25 °C 23 Tvj = 125 °C 22 Tvj = 150 °C 22 ID = 50 A, RGon = 8.2 Ω, VDS = 600 V, VGS = -5/+15 V Tvj = 25 °C 15 Tvj = 125 °C 14 Tvj = 150 °C 14 ID = 50 A, RGoff = 3.9 Ω, VDS = 600 V, VGS = -5/+15 V Tvj = 25 °C 48 Tvj = 125 °C 52 Tvj = 150 °C 52 ID = 50 A, RGoff = 3.9 Ω, VDS = 600 V, VGS = -5/+15 V Tvj = 25 °C 19 Tvj = 125 °C 18 Tvj = 150 °C 18 ID = 50 A, VDS = 600 V, Lσ = 35 nH, VGS = -5/+15 V, RGon = 8.2 Ω, di/dt = 3 kA/µs (Tvj = 150 °C) Tvj = 25 °C 0.717 Tvj = 125 °C 0.793 Tvj = 150 °C 0.825 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Datasheet tr td off tf Eon 4 210 µA 400 nA ns ns ns ns mJ 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 3 Body diode Table 4 Characteristic Values (continued) Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse Eoff Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op 3 ID = 50 A, VDS = 600 V, Tvj = 25 °C Lσ = 35 nH, Tvj = 125 °C VGS = -5/+15 V, RGoff = 3.9 Ω, dv/dt = 37.2 Tvj = 150 °C kV/µs (Tvj = 150 °C) 0.192 per MOSFET 1.09 Max. mJ 0.194 0.194 -40 K/W 150 °C Body diode Table 5 Maximum Rated Values Parameter Symbol Note or test condition DC body diode forward current Table 6 ISD Tvj = 175 °C, VGS = -5 V TH = 65 °C Values Unit 16 A Values Unit Characteristic Values Parameter Symbol Note or test condition Min. Forward voltage 4 Typ. Unit VSD ISD = 50 A, VGS = -5 V Typ. Max. Tvj = 25 °C 4.6 5.65 Tvj = 125 °C 4.35 Tvj = 150 °C 4.3 V NTC-Thermistor Table 7 Characteristic Values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 5 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 5 Characteristics diagrams 5 Characteristics diagrams output characteristic (typical), MOSFET ID = f(VDS) VGS = 15 V output characteristic (typical), MOSFET ID = f(VDS) Tvj = 150 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 capacity characteristic (typical), MOSFET C = f(VDS) f = 1 MHz, Tvj = 25 °C, VGS = 0 V 100 100 90 80 10 70 60 50 1 40 30 0.1 20 10 0 0.01 4 Datasheet 5 6 7 8 9 10 11 12 0.1 6 1 10 100 1000 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 5 Characteristics diagrams switching losses (typical), MOSFET E = f(ID) RGoff = 3.9 Ω, RGon = 8.2 Ω, VDS = 600 V, VGS = -5/15 V switching losses (typical), MOSFET E = f(RG) VDS = 600 V, ID = 50 A, VGS = -5/15 V 1.50 6.0 5.5 1.25 5.0 4.5 1.00 4.0 3.5 0.75 3.0 2.5 0.50 2.0 1.5 0.25 1.0 0.5 0.00 0.0 0 10 20 30 40 50 60 70 80 90 100 0 reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RGoff = 3.9 Ω, Tvj = 150 °C, VGS = -5/15 V 10 20 30 40 50 60 70 80 90 transient thermal impedance , MOSFET Zth = f(t) 120 10 110 100 90 80 1 70 60 50 40 0.1 30 20 10 0 0 Datasheet 200 400 600 800 1000 1200 0.01 0.001 1400 7 0.01 0.1 1 10 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 5 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 0 Datasheet 25 50 75 100 125 150 8 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 6 Circuit diagram 6 Circuit diagram J Figure 2 Datasheet 9 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 7 Package outlines 7 Package outlines Infineon Figure 3 Datasheet 10 0.20 2021-02-12 F4-23MR12W1M1_B76 EasyPACK™ module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 11 0.20 2021-02-12 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-02-12 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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