FB15R06KL4B1

Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Höchstzulässige Werte / maximum rated values Diode Gleichrichter/ diode rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stoßstrom Grenzwert surge forward current Grenzlastintegral I t - value 2 Tvj =25°C TC =80°C TC =80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C VRRM IFRMSM IRMSmax IFSM It 2 800 V 58 50 448 358 1000 642 A A A A As As 2 2 tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C Transistor Wechselrichter/ transistor inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ diode inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, tp = 10ms, Tvj = 125°C IF IFRM It 2 Tvj =25°C TC =65°C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C VCES IC,nom. IC ICRM Ptot VGES 600 15 19 30 60 +/- 20V V A A A W V 15 30 25 A A As 2 Transistor Brems-Chopper/ transistor brake-chopper Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Brems-Chopper/ diode brake-chopper Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current prepared by: Thomas Passe approved by: R. Keggenhoff tP = 1 ms IF IFRM 15 30 A A Tvj =25°C TC =65 °C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C VCES IC,nom. IC ICRM Ptot VGES 600 15 19 30 60 +/- 20V V A A A W V date of publication: 2003-03-26 revision: 2.1 1(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate Modul Isolation/ module isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values Diode Gleichrichter/ diode rectifier Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Tvj = 150°C, Tvj = 150°C Tvj = 150°C Tvj = 150°C, TC = 25°C VR = 800 V IF = 15 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,8 0,61 11 5 max. V V mΩ mA mΩ - 11 - Transistor Wechselrichter/ transistor inverter VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, Tvj = 25°C, min. IC = IC = IC = 15 A 15 A 0,4mA VGE(TO) Cies 600V ICES IGES 300 V 68 Ohm 68 Ohm 300 V 68 Ohm 68 Ohm 300 V 68 Ohm 68 Ohm 300 V 68 Ohm 68 Ohm 300 V 68 Ohm 80 nH 300 V 68 Ohm 80 nH 68 Ohm 360 V 1000 A/µs ISC Eoff Eon tf td,off tr td,on VCE sat 4,5 - typ. 1,95 2,2 5,5 0,8 - max. 2,55 6,5 5,0 400 V V V nF mA nA f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj =25°C, V CE = VCE = 0V, VGE =20V, Tvj =25°C IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, V CC = LS = IC = INenn, V CC = LS = tP ≤ 10µs, VGE ≤ 15V, Tvj≤125°C, RG = VCC = dI/dt = VGE = ±15V, Tvj = 125°C, R G = VGE = ±15V, Tvj = 125°C, R G = 37 34 37 37 216 223 17 26 0,6 - ns ns ns ns ns ns ns ns mJ 0,4 - mJ 60 - A 2(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Elektrische Eigenschaften / electrical properties Charakteristische Werte / characteristic values min. Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Diode Wechselrichter/ diode inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy TC = 25°C LσCE RCC'+EE' - typ. 10 max. 40 nH mΩ min. VGE = 0V, Tvj = 25°C, VGE = 0V, Tvj = 125°C, IF=INenn, IF = IF = 15 A 15 A 600 A/us 300 V 300 V 600 A/us 300 V 300 V 600 A/us 300 V 300 V Erec Qr IRM VF - typ. 1,75 1,8 13 14 0,8 1,4 0,14 0,24 max. 2,15 V V A A µAs µAs mJ mJ - diF/dt = VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = IF=INenn, - diF/dt = VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = Transistor Brems-Chopper/ transistor brake-chopper VGE = 15V, Tvj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, Tvj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current VCE = VGE, Tvj = 25°C, min. IC = IC = IC = 15,0 A 15,0 A 0,4mA VGE(TO) Cies 600V IGES VCE sat 4,5 - typ. 1,95 2,2 5,5 0,8 - max. 2,55 6,5 5,0 400 V V V nF mA nA f = 1MHz, Tvj = 25°C VCE = 25 V, VGE = 0 V VGE = 0V, Tvj = 25°C, V CE = VCE = 0V, VGE = 20V, Tvj = 25°C Diode Brems-Chopper/ diode brake-chopper Tvj = 25°C, Durchlaßspannung forward voltage Tvj = 125°C, min. IF = IF = 15A 15A VF - typ. 2,15 2,25 max. 2,6 V V NTC-Widerstand/ NTC-thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. TC = 25°C TC = 100°C, R 100 = 493 Ω TC = 25°C R2 = R1 exp [B(1/T2 - 1/T1)] R25 ∆R/R P25 B25/50 -5 typ. 5 max. 5 20 kΩ % mW K 3375 3(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Thermische Eigenschaften / thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ rectif. diode Trans. Wechselr./ trans. inverter Diode Wechselr./ diode inverter Trans. Bremse/ trans. brake Diode Bremse/ diode brake Innerer Wärmewiderstand thermal resistance, junction to case Gleichr. Diode/ rectif. diode Trans. Wechselr./ trans. inverter Diode Wechselr./ diode inverter Trans. Bremse/ trans. brake Diode Bremse/ diode brake Übergangs-Wärmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ rectif. diode Trans. Wechselr./ trans. inverter Diode Wechselr./ diode inverter Trans. Bremse/ trans. brake Diode Bremse/ diode brake Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvj Top Tstg λPaste=1W/m*K λgrease=1W/m*K RthCH RthJC λPaste=1W/m*K λgrease=1W/m*K RthJH -40 -40 typ. 1,1 2,4 4,0 2,4 4,3 0,2 0,6 1,4 0,6 1,5 - max. 1 2 2,9 2 3,1 150 125 125 K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W K/W °C °C °C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anpreßkraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kühlkörper terminal to heatsink Kriechstrecke creepage distance Luftstrecke clearance distance Terminal - Terminal terminal to terminal Kriechstrecke creepage distance Luftstrecke clearance distance Al2O3 225 F 40...80 N G 36 13,5 12 7,5 7,5 g mm mm mm mm 4(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) output characteristic inverter (typical) 30 Tj = 25°C 25 Tj = 125°C 20 IC [A] 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) output characteristic inverter (typical) 30 VGE = 8V 25 VGE = 9V VGE = 10V Vge=12V 20 Vge=15V Vge=20V IC = f (VCE) Tvj = 125°C IC [A] 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] 5(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary IC = f (VGE) VCE = 20 V Übertragungscharakteristik Wechselr. (typisch) transfer characteristic inverter (typical) 30 Tj = 25°C 25 Tj = 25°C 20 IC [A] 15 10 5 0 6,00 7,00 8,00 9,00 10,00 11,00 12,00 13,00 VGE [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) forward characteristic of FWD inverter (typical) 30 Tj = 25°C 25 Tj = 125°C IF = f (VF) 20 IF [A] 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF [V] 6(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary E = f (IC), Eoff = f (IC), Erec = f (IC) VCC = on Tj = 125°C, V GE = ±15 V, RGon = RGoff = 300 V 68 Ohm Schaltverluste Wechselr. (typisch) switching losses inverter (typical) 3 Eon 2,5 Eoff Erec 2 E [mWs] 1,5 1 0,5 0 0 5 10 15 20 25 30 IC [A] Schaltverluste Wechselr. (typisch) switching losses inverter (typical) 3 Eon 2,5 Eoff Erec 2 E = f (RG), Eoff = f (RG), Erec = f (RG) on Tj = 125°C, V GE = +-15 V , I c = Inenn , VCC = 300 V E [mWs] 1,5 1 0,5 0 60 80 100 120 140 160 180 200 220 R G [Ω ] 7(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary ZthJH = f (t) Transienter Wärmewiderstand Wechselr. transient thermal impedance inverter 10,000 Zth-IGBT Zth-FWD ZthJH [K/W] 1,000 i 1 IGBT: ri [K/W]: 156,8e-3 3e-6 i [s]: FWD: r i [K/W]: 261,3e-3 i 2 616,5e-3 10,16e-3 1,31 78,7e-3 3 784,7e-3 78,72e-3 1,03 10,2e-3 1 4 842e-3 225,6e-3 1,4 225,6e-3 10 [s]: 3e-6 0,1 0,100 0,001 0,01 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 35 IC = f (VCE) 68 Ohm reverse bias save operating area inverter (RBSOA)Tvj = 125°C, VGE = ±15V, RG = 30 IC,Modul IC,Chip 25 20 IC [A] 15 10 5 0 0 100 200 300 400 500 600 700 VCE [V] 8(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Brems-Chopper-IGBT (typisch) output characteristic brake-chopper-IGBT (typical) 30 Tj = 25°C 25 Tj = 125°C 20 IC [A] 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 VCE [V] Durchlaßkennlinie der Brems-Chopper-Diode (typisch) IF = f (VF) forward characteristic of brake-chopper-FWD (typical) 30 Tj = 25°C 25 Tj = 125°C 20 IF [A] 15 10 5 0 0 0,5 1 1,5 2 2,5 3 VF [V] 9(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary IF = f (VF) Durchlaßkennlinie der Gleichrichterdiode (typisch) forward characteristic of rectifier diode (typical) 30 Tj = 25°C 25 Tj = 150°C 20 IF [A] 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[Ω] 1000 100 0 20 40 60 80 100 120 140 TC [°C] 10(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Vorläufig preliminary Schaltplan/ circuit diagram Gehäuseabmessungen/ package outlines Bohrplan / drilling layout 11(12) Technische Information / technical information IGBT-Module IGBT-Modules FB15R06KL4B1 Gehäuseabmessungen Forts. / package outlines contd. 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