FB20R06KL4

Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Höchstzulässige Werte / Maximum rated values Diode Gleichrichter/ Diode Rectifier Periodische Rückw. Spitzensperrspannung repetitive peak reverse voltage Durchlaßstrom Grenzeffektivwert pro Chip RMS forward current per chip Gleichrichter Ausgang Grenzeffektivstrom maximum RMS current at Rectifier output Stoßstrom Grenzwert surge forward current Grenzlastintegral I2t - value Tvj =25°C TC =80°C TC =80°C tP = 10 ms, T vj = tP = 10 ms, T vj = 25°C 25°C VRRM IFRMSM IRMSmax IFSM 2 It 800 58 96 448 358 1000 642 V A A A A A2 s A2 s tP = 10 ms, T vj = 150°C tP = 10 ms, T vj = 150°C Transistor Wechselrichter/ Transistor Inverter Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Diode Wechselrichter/ Diode Inverter Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral 2 I t - value tP = 1 ms VR = 0V, t p = 10ms, T vj = 125°C IF IFRM 2 It Tvj =25°C TC = 65°C TC = 25 °C tP = 1 ms, TC = 25°C T C =65°C VCES IC,nom. IC ICRM Ptot VGES 600 20 25 40 80 +/- 20V V A A A W V 20 40 62 A A A2 s prepared by: Thomas Passe approved by: Ingo Graf date of publication: 2002-02-27 revision: 5 1(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary RMS, f = 50 Hz, t = 1 min. NTC connected to Baseplate Modul Isolation/ Module Isolation Isolations-Prüfspannung insulation test voltage VISOL 2,5 kV Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values Diode Gleichrichter/ Diode Rectifier Durchlaßspannung forward voltage Schleusenspannung threshold voltage Ersatzwiderstand slope resistance Sperrstrom reverse current Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Tvj = 150°C, Tvj = 150°C Tvj = 150°C Tvj = 150°C, TC = 25°C V R = 800 V I F = 20 A VF V(TO) rT IR RAA'+CC' min. - typ. 0,85 0,63 10 5 4 max. V V mW mA mW Transistor Wechselrichter/ Transistor Inverter VGE = 15V, T vj = 25°C, Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage VGE = 15V, T vj = 125°C, Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data VCE = VGE, Tvj = 25°C, min. I C = 20 A I C = 20 A I C = 0,5mA VGE(TO) Cies ICES IGES VCE sat 4,5 - typ. 1,95 2,2 5,5 1,1 5,0 - max. 2,55 6,5 400 V V V nF mA nA f = 1MHz, Tvj = 25°C VCE = 25 V, V GE = 0 V VGE = 0V, Tvj = 125°C, VCE = 600V VCE = 0V, V GE =20V, Tvj =25°C IC = INenn, V CC = 300 V 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm 47 Ohm VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, VGE = ±15V, Tvj = 25°C, R G = VGE = ±15V, Tvj = 125°C, R G = IC = INenn, VGE = ±15V, Tvj = 125°C, R G = L IC = INenn, S td,on - 22 31 23 37 143 154 22 38 0,73 - ns ns ns ns ns ns ns ns mWs V CC = 300 V tr td,off tf Eon - V CC = 300 V V CC = 300 V V CC = 300 V = 80 nH 47 Ohm 47 Ohm 360 V ISC 80 A Eoff 0,56 mWs V CC = 300 V L S VGE = ±15V, Tvj = 125°C, R G = tP £ 10µs, V GE £ 15V, Tvj£125°C, RG = VCC = = 80 nH 2(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Elektrische Eigenschaften / Electrical properties Charakteristische Werte / Characteristic values min. Modulinduktivität stray inductance module Modul Leitungswiderstand, Anschlüsse-Chip lead resistance, terminals-chip Diode Wechselrichter/ Diode Inverter Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current Sperrverzögerungsladung recovered charge Abschaltenergie pro Puls reverse recovery energy LsCE TC = 25°C RCC'+EE' - typ. 13 max. 40 nH mW min. VGE = 0V, Tvj = 25°C, VGE = 0V, Tvj = 125°C, IF=INenn, I F = 20 A I F = 20 A 300 V 300 V 300 V 300 V 300 V 300 V Erec Qr IRM VF - typ. 1,7 1,7 20 23 1 1,7 0,2 0,35 max. 2,15 V V A A µAs µAs mWs mWs - diF/dt = 1000 A/us VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = IF=INenn, VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = IF=INenn, VGE = -10V, Tvj = 25°C, V R = VGE = -10V, Tvj = 125°C, V R = - diF/dt = 1000 A/us - diF/dt = 1000 A/us NTC-Widerstand/ NTC-Thermistor Nennwiderstand Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value min. TC = 25°C TC = 100°C, R 100 = 493 W TC = 25°C R2 = R1 exp [B(1/T2 - 1/T1)] R25 DR/R P25 B25/50 -5 typ. 5 max. 5 20 kW % mW K 3375 3(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to heatsink Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthJH - typ. 1,1 1,8 3,7 max. K/W K/W K/W Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter Innerer Wärmewiderstand thermal resistance, junction to case Gleichr. Diode/ Rectif. Diode Trans. Wechsr./ Trans. Inverter Diode Wechsr./ Diode Inverter RthJC - - 1 1,6 2,7 K/W K/W K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink Gleichr. Diode/ Rectif. Diode lPaste=1W/m*K RthCH - 0,2 0,4 1,3 - K/W K/W K/W Trans. Wechsr./ Trans. Inverter lgrease =1W/m*K Diode Wechsr./ Diode Inverter Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvj Top Tstg -40 -40 - 150 125 125 °C °C °C Mechanische Eigenschaften / Mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anpreßkraft f. mech. Befestigung pro Feder mounting force per clamp Gewicht weight Kontakt - Kühlkörper terminal to heatsink Kriechstrecke creeping distance Luftstrecke clearance Terminal - Terminal terminal to terminal Kriechstrecke creeping distance Luftstrecke clearance F Al2O3 225 40...80 36 13,5 N G g mm 12 mm 7,5 mm 7,5 mm 4(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IC = f (VCE) VGE = 15 V Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 40 35 30 25 Tj = 25°C Tj = 125°C IC [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 3,50 4,00 4,50 5,00 VCE [V] Ausgangskennlinienfeld Wechselr. (typisch) Output characteristic Inverter (typical) 40 35 30 VGE = 10V 25 Vge=12V Vge=15V Vge=20V 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 VGE = 8V VGE = 9V IC = f (VCE) T vj = 125°C IC [A] 20 3,00 3,50 4,00 4,50 5,00 VCE [V] 5(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IC = f (VGE) VCE = 20 V Übertragungscharakteristik Wechselr. (typisch) Transfer characteristic Inverter (typical) 40 35 30 25 Tj = 25°C Tj = 125°C IC [A] 20 15 10 5 0 5,00 6,00 7,00 8,00 9,00 10,00 11,00 12,00 VGE [V] Durchlaßkennlinie der Freilaufdiode Wechselr. (typisch) Forward characteristic of FWD Inverter (typical) 40 Tj = 25°C 35 30 25 Tj = 125°C IF = f (VF) IF [A] 20 15 10 5 0 0,00 0,50 1,00 1,50 2,00 2,50 3,00 VF [V] 6(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary E = f (IC), Eoff = f (IC), Erec = f (IC) on T j = 125°C, V GE = ±15 V, VCC = 300 V 47 Ohm Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon 2,5 Eoff Erec 2 R Gon = RGoff = E [mWs] 1,5 1 0,5 0 0 5 10 15 20 25 30 35 40 45 IC [A] Schaltverluste Wechselr. (typisch) Switching losses Inverter (typical) 3 Eon 2,5 Eoff Erec 2 E = f (RG), Eoff = f (RG), Erec = f (RG) on T j = 125°C, V GE = +-15 V , I c = Inenn , V CC = 300 V E [mWs] 1,5 1 0,5 0 40 50 60 70 80 90 100 110 120 RG [W] 7(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary ZthJH = f (t) Transienter Wärmewiderstand Wechselr. Transient thermal impedance Inverter 10,000 Zth-IGBT Zth-FWD ZthJH [K/W] 1,000 i 1 2 3 IGBT: ri [K/W]: 118,66e-3 592,55e-3 464,26e-3 4 624,52e-3 226,61e-3 1,27 227,3e-3 10 ti [s]: 3e-6 FWD: r i [K/W]: 245,4e-3 ti [s]: 0,100 0,001 0,01 0,1 79,74e-3 1,22 80,4e-3 10,28e-3 956,8e-3 10,35e-3 1 3e-6 t [s] Sicherer Arbeitsbereich Wechselr. (RBSOA) 45 40 35 30 25 20 15 10 5 0 0 100 200 300 400 IC = f (VCE) 47 Ohm Reverse bias save operating area Inverter (RBSOA)Tvj = 125°C, V GE = ±15V, R G = IC,Modul IC,Chip IC [A] 500 600 700 VCE [V] 8(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary IF = f (VF) Durchlaßkennlinie der Gleichrichterdiode (typisch) Forward characteristic of Rectifier Diode (typical) 40 35 30 25 Tj = 25°C Tj = 150°C IF [A] 20 15 10 5 0 0,00 0,20 0,40 0,60 0,80 1,00 1,20 VF [V] NTC- Temperaturkennlinie (typisch) R = f (T) NTC- temperature characteristic (typical) 100000 Rtyp 10000 R[W] 1000 100 0 20 40 60 80 100 120 140 TC [°C] 9(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Vorläufig Preliminary Schaltplan/ Circuit diagram J Gehäuseabmessungen/ Package outlines Bohrplan / drilling layout 10(11) Technische Information / Technical Information IGBT-Module IGBT-Modules FB20R06KL4 Gehäuseabmessungen Forts. / Package outlines contd. 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