FD400R12KF4

European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FD 400 R 12 KF4 11,85 55,2 M8 screwing depth max. 8 31,5 130 114 E1 C2 C1 E1 G1 C1 E2 M4 7 28 2,5 deep 16 40 53 2,5 deep screwing depth max. 8 E1 E1 C2 (K) G1 C1 C1 E2 (A) A15/97 Mod-E/ 21.Jan 1998 G.Schulze FD 400 R 12 KF 4 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage VCES IC ICRM Ptot VGE IF IFRM VISOL min. 4,5 Eoff 60 - mWs typ. 2,7 3,3 5,5 28 8 32 0,7 0,8 0,9 1,0 0,10 0,15 70 1200 400 800 2700 ± 20 400 800 2,5 max. 3,2 3,9 6,5 400 400 V A A W V A A kV tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) Speicherzeit (induktive Last) Fallzeit (induktive Last) Einschaltverlustenergie pro puls Abschaltverlustenergie pro Puls collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) storage time (inductive load) fall time (inductive load) turn-on energie per pulse turn-off energie loss per pulse i C=400A, vGE=15V, t vj=25°C i C=400A, vGE=15V, t vj=125°C i C=16mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V, v GE=0V vCE=1200V, v GE=0V, t vj=25°C vCE=1200V, v GE=0V, t vj=125°C vCE=0V, v GE=20V, t vj=25°C vCE=0V, v EG=20V, t vj=25°C i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A,vCE=600V,vL=±15V,R G=3,6 i C=400A, vCE=600V, L s=70nH vL=±15V, R G=3,6 , tvj=125°C i C=400A, vCE=600V, L s=70nH vL=±15V, R G=3,6 , tvj=125°C vCE sat vGE(th) Cies i CES i GES i EGS ,tvj= 25°C ton ,tvj=125°C ,tvj= 25°C ts ,tvj=125°C ,tvj= 25°C tf ,tvj=125°C Eon V V V nF mA mA nA nA µs µs µs µs µs µs - mWs Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaßspannung Rückstromspitze forward voltage peak reverse recovery current i F=400A, vGE=0V, t vj=25°C i F=400A, vGE=0V, t vj=125°C i F=400A, vRM=600V, v EG = 10V -diF/dt = 2,0 kA/µs, tvj = 25°C -diF/dt = 2,0 kA/µs, tvj = 125°C i F=400A, vRM=600V, v EG = 10V -diF/dt = 3,0 kA/µs, tvj = 25°C -diF/dt = 3,0 kA/µs, tvj = 125°C vF IRM Qr 18 50 - µAs - µAs 140 240 -A -A 2,2 2,0 2,7 V 2,5 V Sperrverzögerungsladung recovered charge Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand thermal resistance, junction to case Transistor / transistor, DC Transistor,DC,pro Zweig/per arm Diode, DC, pro Modul/per module Diode, DC, pro Zweig/per arm thermal resistance, case to heatsink pro Modul / per Module pro Zweig / per arm max. junction temperature pro Modul / per Module operating temperature Transistor / transistor storage temperature RthJC 0,023 0,046 0,044 0,088 0,01 0,02 150 -40...+150 -40...+125 °C/W °C/W °C/W °C/W °C/W °C/W °C °C °C Übergangs-Wärmewiderstand Höchstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur RthCK tvj max tc op tstg Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlüsse Gewicht case, see appendix internal insulation mounting torque terminal connection torque weight Seite / page terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 G 1 AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection tfg = 10 µs VCC = 750 V vL = ±15 V vCEM = 900 V RGF = RGR = 3,6 iCMK1 3500 A tvj = 125°C iCMK2 3000 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 20nH x |dic/dt| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. FD 400 R12 KF4 800 800 V GE = 20 V 15 V 700 iC [A] 600 iC [A] 700 12 V 600 10 V 500 500 400 400 9V 300 300 8V 200 200 100 100 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 FD400R12KF4 FD400R12KF4 Bild/Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V -----Tvj = 25 °C ___Tvj = 125 °C Bild/Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) tvj = 125 °C 800 t vj = 125 °C 25 °C 1000 700 iC [A] 600 iC 800 [A] 500 600 400 400 300 200 200 100 0 5 6 7 8 9 10 v GE [V] 11 12 0 0 200 400 600 800 1000 1200 1400 FD400R12KF4 FD400R12KF4 v CE [V] Bild/Fig. 3 Übertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V Bild/Fig. 4 Rückwärts-Arbeitsbereich Reverse biased safe operating area tvj = 125 °C, vLF = vLR = 15 V, RG = 3,6 FD 400 R12 KF4 10-1 Diode 6 Z(th)JC [°C/W] IGBT 3 2 800 700 iF [A] 600 500 10-2 400 300 5 200 3 2 100 10-3 -3 10 2 4 10-2 2 4 10-1 2 4 100 2 4 101 0 0.5 FD400R12KF4 1.0 1.5 2.0 2.5 v F [V] 3.0 FD400R12KF4 t [s ] Bild/Fig. 5 Transienter innerer Wärmewiderstand je Zweig (DC) Transient thermal impedance per arm (DC) Bild/Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 °C tvj = 125 °C Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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