FD800R45KL3KB5NPSA1

FD800R45KL3-K_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 800 A / ICRM = 1600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Isolated base plate - Package with CTI > 600 - Package with enhanced insulation of 10.4 kV AC 60 s Potential applications • • • • • Traction drives Motor drives Medium-voltage converters Chopper applications High-power converters Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5 4 Diode, Reverse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 10.4 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 3.5 kV 3000 V DC stability VCE(D) Tvj=25°C, 100 Fit Material of module baseplate AlSiC Internal isolation basic insulation (class 1, IEC 61140) AlN Creepage distance dCreep terminal to heatsink 64.0 mm Creepage distance dCreep terminal to terminal 56.0 mm Clearance dClear terminal to heatsink 40.0 mm Clearance dClear terminal to terminal 26.0 mm Comparative tracking index Table 2 CTI >600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module LsCE Typ. Unit Max. 20 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 0.18 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 0.18 mΩ Storage temperature Tstg -55 125 °C Mounting torque for module mounting M - Mounting according to M6, Screw valid application note 4.25 5.75 Nm Terminal connection torque M - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 Weight Note: Datasheet G 1400 g The maximum allowed dv/dt measured between 0,6 and 1×Vce is 2400V/µs. 3 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 2 IGBT, Brake-Chopper 2 IGBT, Brake-Chopper Table 3 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 125 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 4 Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 TC = 95 °C 800 A 1600 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage VCE sat Gate threshold voltage VGEth Gate charge QG IC = 800 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.50 2.85 Tvj = 125 °C 3.10 3.70 6 6.60 IC = 70.5 mA, VCE = VGE, Tvj = 25 °C 5.40 V V VCE = 2800 V 26.5 µC Internal gate resistor RGint Tvj = 25 °C 1.1 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 185 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 3.1 nF Collector-emitter cut-off current ICES VCE = 4500 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C 0.580 Tvj = 125 °C 0.600 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C 0.190 Tvj = 125 °C 0.220 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 6.600 Tvj = 125 °C 6.900 IC = 800 A, VCE = 2800 V, VGE = ±15 V, RGoff = 7.5 Ω Tvj = 25 °C 0.350 Tvj = 125 °C 0.450 IC = 500 A, VCE = 2000 V, VGE = ±15 V, RGon = 1 Ω Tvj = 25 °C Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on time (resistive load) tr tdoff tf ton_R Tvj = 25 °C 1.80 5 mA 400 nA µs µs µs µs µs (table continues...) Datasheet 4 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 3 Diode, Brake-Chopper Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff SC data ISC IC = 800 A, VCE = 2800 V, Lσ = 95 nH, VGE = ±15 V, RGon = 1 Ω, di/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 3100 Tvj = 125 °C 4100 IC = 800 A, VCE = 2800 V, Lσ = 95 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 2000 V/µs (Tvj = 125 °C) Tvj = 25 °C 2800 Tvj = 125 °C 3400 VGE ≤ 15 V, VCC = 2800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj ≤ 125 °C 4600 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op 3 Typ. Unit Max. mJ mJ A 11.1 13.5 -50 K/kW K/kW 125 °C Diode, Brake-Chopper Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 tP = 1 ms tP = 10 ms, VR = 0 V Tvj = 125 °C Tvj = 125 °C 800 A 1600 A 255 kA²s 1600 kW 10 µs Values Unit Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF IF = 800 A, VGE = 0 V Typ. Max. Tvj = 25 °C 2.50 3.10 Tvj = 125 °C 2.50 3.00 V (table continues...) Datasheet 5 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 4 Diode, Reverse Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 1000 Tvj = 125 °C 1150 VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 770 Tvj = 125 °C 1400 VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 1200 Tvj = 125 °C 2400 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op 4 Typ. Unit Max. A µC mJ 25.5 21.0 -50 K/kW K/kW 125 °C Diode, Reverse Table 7 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 8 Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 tP = 1 ms tP = 10 ms, VR = 0 V Tvj = 125 °C Tvj = 125 °C 800 A 1600 A 255 kA²s 1600 kW 10 µs Values Unit Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF IF = 800 A, VGE = 0 V Typ. Max. Tvj = 25 °C 2.50 3.10 Tvj = 125 °C 2.50 3.00 V (table continues...) Datasheet 6 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 4 Diode, Reverse Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current IRM Recovered charge Qr Reverse recovery energy Erec VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 1000 Tvj = 125 °C 1150 VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 770 Tvj = 125 °C 1400 VR = 2800 V, IF = 800 A, VGE = -15 V, -diF/dt = 3300 A/µs (Tvj = 125 °C) Tvj = 25 °C 1200 Tvj = 125 °C 2400 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Datasheet Typ. Unit Max. A µC mJ 25.5 21.0 -50 7 K/kW K/kW 125 °C Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 5 Characteristics diagrams 5 Characteristics diagrams Output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, BrakeChopper IC = f(VCE) Tvj = 125 °C 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Transfer characteristic (typical), IGBT, Brake-Chopper Switching losses (typical), IGBT, Brake-Chopper IC = f(VGE) E = f(IC) VCE = 20 V RGoff = 7.5 Ω, RGon = 1 Ω, VCE = 2800 V, VGE = ± 15 V 1600 11000 10000 1400 9000 1200 8000 7000 1000 6000 800 5000 600 4000 3000 400 2000 200 1000 0 0 5 Datasheet 6 7 8 9 10 11 12 0 8 200 400 600 800 1000 1200 1400 1600 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 5 Characteristics diagrams Switching losses (typical), IGBT, Brake-Chopper E = f(RG) IC = 800 A, VCE = 2800 V, VGE = ± 15 V Transient thermal impedance , IGBT, Brake-Chopper Zth = f(t) 100 15000 13500 12000 10500 10 9000 7500 6000 1 4500 3000 1500 0 0.1 0.001 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Reverse bias safe operating area (RBSOA), IGBT, Brake-Chopper IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 125 °C 0.01 0.1 1 10 Capacity characteristic (typical), IGBT, Brake-Chopper C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C 1000 1800 1600 1400 100 1200 1000 800 600 10 400 200 0 1 0 Datasheet 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 9 10 20 30 40 50 60 70 80 90 100 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 5 Characteristics diagrams Gate charge characteristic (typical), IGBT, BrakeChopper VGE = f(QG) IC = 800 A, Tvj = 25 °C Forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 15 1600 12 1400 9 1200 6 1000 3 0 800 -3 600 -6 400 -9 200 -12 -15 0 0 4 8 12 16 20 24 28 0.0 Switching losses (typical), Diode, Brake-Chopper Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Switching losses (typical), Diode, Brake-Chopper Erec = f(RG) VCE = 2800 V, IF = 800 A 3200 2800 2800 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 0 0 0 Datasheet 200 400 600 800 1000 1200 1400 1600 0 10 1 2 3 4 5 6 7 8 9 10 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 5 Characteristics diagrams Transient thermal impedance, Diode, Brake-Chopper Zth = f(t) 100 Safe operating area (SOA), Diode, Brake-Chopper IR = f(VR) Tvj = 125 °C 2000 1600 10 1200 800 1 400 0 0.1 0.001 0.01 0.1 1 0 10 Forward characteristic (typical), Diode, Reverse IF = f(VF) 2000 3000 4000 5000 Switching losses (typical), Diode, Reverse Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) 1600 3200 1400 2800 1200 2400 1000 2000 800 1600 600 1200 400 800 200 400 0 0 0.0 Datasheet 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 11 200 400 600 800 1000 1200 1400 1600 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 5 Characteristics diagrams Switching losses (typical), Diode, Reverse Erec = f(RG) VCE = 2800 V, IF = 800 A Transient thermal impedance, Diode, Reverse Zth = f(t) 100 2800 2400 10 2000 1600 1 1200 800 0.1 400 0 0 1 2 3 4 5 6 7 8 9 0.01 0.001 10 0.01 0.1 1 10 Safe operating area (SOA), Diode, Reverse IR = f(VR) Tvj = 125 °C 2000 1600 1200 800 400 0 0 Datasheet 1000 2000 3000 4000 5000 12 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 6 Circuit diagram 6 Circuit diagram Figure 1 Datasheet 13 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 7 Package outlines 7 Package outlines Figure 2 Datasheet 14 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 15 Revision 1.10 2021-12-23 FD800R45KL3-K_B5 Highly insulated module Revision history Revision history Document revision Date of release Description of changes V2.0 2015-07-08 Preliminary datasheet V3.0 2015-09-14 Final datasheet V3.1 2016-08-30 Final datasheet V3.2 2018-01-15 Final datasheet V3.3 2019-08-23 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-12-23 Final datasheet Datasheet 16 Revision 1.10 2021-12-23 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-12-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAX591-006 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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