DoubleSideCooledModule
FF450R08A03P2
FinalDataSheet
V3.0,2020-05-11
AutomotiveHighPower
FF450R08A03P2
DoubleSideCooledModule
1Features/Description
VCES = 750 V
IC = 450 A
TypicalApplications
• AutomotiveApplications
• HybridElectricalVehicles(H)EV
• Optimized for automotive applications with DC link
voltages up to 450 V and gate driver voltage level
of-8V/+15V
Description
The HybridPACKTM DSC S2 is a very compact
half-bridge module targeting hybrid and electric
vehicles.
The module is based on Infineon’s long-term
experience developing IGBT power modules and
implements the EDT2 IGBT generation, which is an
automotive Micro-Pattern Trench-Field-Stop cell
design optimized for electric drive train applications.
The chipset has benchmark current density
combined with short circuit ruggedness and
increased blocking voltage for reliable inverter
operation under harsh environmental conditions.
The EDT2 IGBTs also show excellent light load
power losses, which helps to improve System
efficiency over a real driving cycle. The EDT2 IGBT
was optimized for applications with switching
frequencies in the range of 10 kHz. Additionally,
on-die integrated current sensor and temperature
sensor allow precise monitoring of IGBT state.
These features enable enhanced protection and
intelligent control of the system.
ElectricalFeatures
• IntegratedCurrentSensor
• IntegratedTemperatureSensor
• LowInductiveDesign
• Blockingvoltage750V
• LowSwitchingLosses
• Short-time extended Operation Temperature
Tvjop=175°C
MechanicalFeatures
• 2.5kVAC1minInsulation
• Doublesidedcooling
• Compactdesign
• RoHScompliant
The innovative and small package is designed for
Double Sided Cooling (DSC) with superior thermal
performance. The low stray inductance and
increased blocking voltage support the design of
systems with a very high efficiency. Furthermore,
new material combinations and assembly
technologies enable best thermal and electrical
performance at highest reliability and mechanical
robustness.
ProductName
OrderingCode
FF450R08A03P2
SP001630036
Final Data Sheet
2
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
2IGBT,Inverter
2.1MaximumRatedValues
Parameter
Conditions
Symbol
Value
Unit
Collector-emittervoltage
Tvj = 25°C
VCES
750
V
ICN
450
A
ContinuousDCcollectorcurrent
TC = 120°C, Tvj max = 175°C
IC nom
300
A
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
900
A
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1667
W
VGES
+/-20
V
Implementedcollectorcurrent
Gate-emitterpeakvoltage
2.2CharacteristicValues
Collector-emittersaturationvoltage
min.
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
IC = 300 A, VGE = 15 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
VCE sat
Gatethresholdvoltage
IC = 4.85 mA, VCE = VGE
Tvj = 25°C
VGEth
Gatecharge
VGE = -8 V ... 15 V, VCE = 400V
4.90
QG
typ.
max.
1.20
1.27
1.29
1.44
5.80
6.50
V
V
2.15
µC
Tvj = 25°C
RGint
2.0
Ω
Inputcapacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cies
38.5
nF
Reversetransfercapacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cres
0.18
Collector-emittercut-offcurrent
VCE = 450 V, VGE = 0 V
Tvj = 25°C
ICES
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V
Tvj = 25°C
IGES
Turn-ondelaytime,inductiveload
IC = 300 A, VCE = 400 V
VGE = -8/+15 V
RGon = 3.6 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IC = 300 A, VCE = 400 V
VGE = -8/+15 V
RGon = 3.6 Ω
Internalgateresistor
Risetime,inductiveload
Turn-offdelaytime,inductiveload
Falltime,inductiveload
Turn-onenergylossperpulse
Turn-offenergylossperpulse
SCdata
400
nA
td on
µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
tr
0.06
0.07
0.07
µs
IC = 300 A, VCE = 400 V
VGE = -8/+15 V
RGoff = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
td off
0.48
0.54
0.56
µs
IC = 300 A, VCE = 400 V
VGE = -8/+15 V
RGoff = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
tf
0.07
0.12
0.13
µs
IC = 300 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = -8/+15 V, di/dt = 3400 A/µs (Tvj = 175°C) Tvj = 150°C
RGon = 3.6 Ω
Tvj = 175°C
Eon
11.5
13.5
14.5
mJ
IC = 300 A, VCE = 400 V, LS = 25 nH
Tvj = 25°C
VGE = -8/+15 V, du/dt = 3200 V/µs (Tvj = 175°C)Tvj = 150°C
RGoff = 2.4 Ω
Tvj = 175°C
Eoff
12.0
15.5
17.0
mJ
VGE ≤ 15 V, VCC = 400 V
VCEmax = VCES -LsCE ·di/dt
ISC
tP ≤ 3 µs, Tvj = 175°C
perIGBT
Thermalresistance,casetoheatsink
perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
ClampingForceF=700N
RthCH
top continuous
for 10s within a period of 30s, occurrence maximum 3000
times over lifetime
Tvj op
1)
mA
0.34
0.36
0.36
Thermalresistance,junctiontocase
Temperatureunderswitchingconditions
nF
0.1
A
2000
RthJC
0.090
0.100
1)
K/W
1)
K/W
-40
150
150
175
°C
with double sided cooling, evaluation according to HybridPACK cool application note
Final Data Sheet
3
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
3Diode,Inverter
3.1MaximumRatedValues
Parameter
Conditions
Repetitivepeakreversevoltage
Tvj = 25°C
Symbol
Value
Unit
VRRM
750
V
Implementedforwardcurrent
IFN
450
A
ContinuousDCforwardcurrent
IF
300
A
Repetitivepeakforwardcurrent
tP = 1 ms
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 150°C
IFRM
900
A
I²t
8500
A²s
3.2CharacteristicValues
Forwardvoltage
Peakreverserecoverycurrent
Recoveredcharge
Reverserecoveryenergy
min.
max.
1.83
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
IF = 300 A, VGE = 0 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
VF
1.55
1.45
1.40
IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IRM
170
235
250
A
IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Qr
12.0
26.0
31.0
µC
IF = 300 A, - diF/dt = 3400 A/µs (Tvj = 175°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Erec
2.90
6.60
8.00
mJ
Thermalresistance,junctiontocase
perdiode
Thermalresistance,casetoheatsink
perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
ClampingForceF=700N
RthCH
top continuous
for 10s within a period of 30s, occurrence maximum 3000
times over lifetime
Tvj op
Temperatureunderswitchingconditions
typ.
V
0.1451) K/W
RthJC
0.140
1)
K/W
-40
150
150
175
°C
4Module
Parameter
Conditions
Symbol
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
VISOL
Materialofmodulebaseplate
Value
2.5
kV
Cu
Al2O3
Internalisolation
basicinsulation(class1,IEC61140)
Creepagedistance
terminaltoheatsink
terminaltoterminal
dCreep
terminaltoheatsink
terminaltoterminal
dClear
CTI
Clearance
Comperativetrackingindex
LsCE
Storagetemperature
Tstg
Terminalconnectiontorque
ScrewM5
mm
3.5
mm
3.5
> 600
typ. max.
min.
Strayinductancemodule
Unit
15
nH
-40
125
M
-
Mounting force per clamp
F
-
Weight
G
31
°C
Nm
750
N
g
5TemperatureSensor
Parameter
Conditions
Symbol
Forwardvoltage
ITS = 0.22 mA, Tvj = 25°C
temperaturecoefficient(tcr)
ITS = 0.22 mA
1)
2)
Min
Typ
Max
2)
VTS
2.220 2.280 2.340
TCTS
-5.50
Unit
2)
V
mV/K
with double sided cooling, evaluation according to HybridPACK cool application note
Verified by design, not by test
Final Data Sheet
4
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
6CurrentSensor
Parameter
Conditions
Outputvoltage
VCE = 1.85 V, IC = 900 A
Rsense = 2.40 Ω, Tvj = 25°C
VGE = 15 V
Symbol
Vsense
7Customized
Current Sensor
Output Current
Final Data Sheet
IC = 100 A, Tvj = 175°C, evaluation according to
HybridPACKTM DSC application note
5
Min
Ics
Typ
Max
0.55
Unit
V
min.
typ.
max.
80
100
120
mA
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
8CharacteristicsDiagrams
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=175°C
900
900
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
800
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
800
600
600
500
500
IC [A]
700
IC [A]
700
400
400
300
300
200
200
100
100
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VCE [V]
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
4,0
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=-8/+15V,RGon=3.6Ω,RGoff=2.4Ω,VCE=400V
900
40
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
800
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
35
700
30
600
25
IC [A]
E [mJ]
500
400
20
15
300
10
200
5
100
0
5
Final Data Sheet
6
7
8
9
VGE [V]
10
11
12
0
13
6
0
100
200
300
IC [A]
400
500
600
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=-8/+15V,IC=300A,VCE=400V
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
30
1
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
ZthJH : IGBT
25
ZthJH [K/W]
E [mJ]
0,1
20
0,01
15
i:
1
2
3
4
ri[K/W]: 0,007845 0,02284 0,08379 0,06864
τi[s]:
0,0003479 0,013
0,1423 0,5561
10
2
4
6
8
10
0,001
0,001
12
0,01
RG [Ω]
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=2.4Ω,Tvj=175°C
0,1
t [s]
1
10
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
1000
900
Ic, Modul
IC, Chip
900
800
800
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
700
700
600
600
IF [A]
IC [A]
500
500
400
400
300
300
200
200
100
100
0
0
Final Data Sheet
100
200
300
400
500
VCE [V]
600
700
0
800
7
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4
VF [V]
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=3.6Ω,VCE=400V
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=300A,VCE=400V
12
12
Erec, Tvj = 150°C
Erec, Tvj = 175°C
10
10
8
8
E [mJ]
E [mJ]
Erec, Tvj = 150°C
Erec, Tvj = 175°C
6
6
4
4
2
2
0
0
100
200
300
IF [A]
400
500
0
600
2
3
4
5
6
RG [Ω]
7
8
9
10
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
1
ZthJH : Diode
ZthJH [K/W]
0,1
0,01
i:
1
2
3
4
ri[K/W]: 0,01463
0,03657 0,1284 0,09856
τi[s]:
0,0003128 0,01194 0,119 0,4694
0,001
0,001
Final Data Sheet
0,01
0,1
t [s]
1
10
8
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
9Circuitdiagram
Final Data Sheet
Pin Number
Symbol
I/O
Function
1
P
DC Supply (+)
Positive Supply
2
N
DC Supply (-)
Negative Supply
3
U
AC Output
U Phase Output
4
T+L
Input
Temperature Sensor Plus Low Side
5
T-L
Output
Temperature Sensor Minus Low Side
6
EL
Output
IGBT Emitter Output Low Side
7
CSL
Output
IGBT Current Sensor Output Low Side
8
GL
Input
Gate Input Low Side
9
T+H
Input
Temperature Sensor Plus High Side
10
T-H
Output
Temperature Sensor Minus High Side
11
EH
Output
IGBT Emitter Output High Side
12
CSH
Output
IGBT Current Sensor output High Side
13
GH
Input
Gate Input High Side
14
PS
Output
P-Terminal Voltage Sensing / IGBT Collector Output
9
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
10Packageoutlines
Final Data Sheet
10
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
RevisionHistory
Major changes since previous revision
Revision History
Reference
Date
Description
V2.0
2018-12-06
-
V2.1
2020-04-16
Correction of package outlines
V3.0
2020-05-11
Final datasheet
Final Data Sheet
11
V3.0,2020-05-11
FF450R08A03P2
DoubleSideCooledModule
Terms&Conditionsofusage
Edition2018-08-01
Publishedby
InfineonTechnologiesAG
81726Munich,Germany
©2018InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoany
examplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,Infineon
Technologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementof
intellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice
(http://www.infineon.com)
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthe
nearestInfineonTechnologiesOffice.
Thesecomponentsarenotdesignedfor“specialapplications”thatdemandextremelyhighreliabilityorsafetysuchasaerospace,defenseorlife
supportdevicesorsystems(ClassIIImedicaldevices).Ifyouintendtousethecomponentsinanyofthesespecialapplications,pleasecontact
yourlocalrepresentativeatInternationalRectifierHiRelProducts,Inc.ortheInfineonsupport(https://www.infineon.com/support)toreview
productrequirementsandreliabilitytesting.
InfineonTechnologiescomponentsmaybeusedinspecialapplicationsonlywiththeexpresswrittenapprovalofInfineonTechnologies.Class
IIImedicaldevicesareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Ifthey
fail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Trademarks
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,EconoPACK™,CoolMOS™,CoolSET™,CORECONTROL™,CROSSAVE™,DAVE™,
DI-POL™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPIM™,EconoPACK™,EiceDRIVER™,eupec™,FCOS™,HITFET™,
HybridPACK™,I²RF™,ISOFACE™,IsoPACK™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PRO-SIL™,PROFET™,RASIC™,ReverSave™,SatRIC™,SIEGET™,SINDRION™,
SIPMOS™,SmartLEWIS™,SOLIDFLASH™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
OtherTrademarks
AdvanceDesignSystem™(ADS)ofAgilentTechnologies,AMBA™,ARM™,MULTI-ICE™,KEIL™,PRIMECELL™,REALVIEW™,THUMB™,
µVision™ofARMLimited,UK.AUTOSAR™islicensedbyAUTOSARdevelopmentpartnership.Bluetooth™ofBluetoothSIGInc.CAT-iq™of
DECTForum.COLOSSUS™,FirstGPS™ofTrimbleNavigationLtd.EMV™ofEMVCo,LLC(VisaHoldingsInc.).EPCOS™ofEpcosAG.
FLEXGO™ofMicrosoftCorporation.FlexRay™islicensedbyFlexRayConsortium.HYPERTERMINAL™ofHilgraeveIncorporated.IEC™of
CommissionElectrotechniqueInternationale.IrDA™ofInfraredDataAssociationCorporation.ISO™ofINTERNATIONALORGANIZATION
FORSTANDARDIZATION.MATLAB™ofMathWorks,Inc.MAXIM™ofMaximIntegratedProducts,Inc.MICROTEC™,NUCLEUS™ofMentor
GraphicsCorporation.MIPI™ofMIPIAlliance,Inc.MIPS™ofMIPSTechnologies,Inc.,USA.muRata™ofMURATAMANUFACTURINGCO.,
MICROWAVEOFFICE™(MWO)ofAppliedWaveResearchInc.,OmniVision™ofOmniVisionTechnologies,Inc.Openwave™Openwave
SystemsInc.REDHAT™RedHat,Inc.RFMD™RFMicroDevices,Inc.SIRIUS™ofSiriusSatelliteRadioInc.SOLARIS™ofSun
Microsystems,Inc.SPANSION™ofSpansionLLCLtd.Symbian™ofSymbianSoftwareLimited.TAIYOYUDEN™ofTaiyoYudenCo.
TEAKLITE™ofCEVA,Inc.TEKTRONIX™ofTektronixInc.TOKO™ofTOKOKABUSHIKIKAISHATA.UNIX™ofX/OpenCompanyLimited.
VERILOG™,PALLADIUM™ofCadenceDesignSystems,Inc.VLYNQ™ofTexasInstrumentsIncorporated.VXWORKS™,WINDRIVER™of
WINDRIVERSYSTEMS,INC.ZETEX™ofDiodesZetexLimited.
Last update
Final Data Sheet
2011-11-11
12
V3.0,2020-05-11
www.infineon.com
PublishedbyInfineonTechnologiesAG
