FF450R33T3E3BPSA1

FF450R33T3E3 XHP™3 module XHP™3 module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - Low switching losses - High DC stability - High short-circuit capability - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - Isolated base plate - Package with CTI > 600 Potential applications • • • • • Medium-voltage converters Motor drives Traction drives UPS systems Wind turbines Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Datasheet 2 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 6.0 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV Material of module baseplate AlSiC Creepage distance dCreep terminal to heatsink 53.0 mm Creepage distance dCreep terminal to terminal 53.0 mm Clearance dClear terminal to heatsink 36.0 mm Clearance dClear terminal to terminal 26.0 mm Comparative tracking index Table 2 CTI > 600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module LsCE Typ. Unit Max. 25 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 0.31 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 0.41 mΩ Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G 2 Table 3 -40 150 °C - Mounting according to M6, Screw valid application note 4.25 5.75 Nm - Mounting according to M3, Screw valid application note M8, Screw 0.9 1.1 Nm 8 10 700 g Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 TC = 100 °C 450 IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Continuous DC collector current Symbol Note or test condition VCES ICDC Tvj max = 150 °C A (table continues...) Datasheet 3 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Repetitive peak collector current ICRM Gate-emitter peak voltage VGES Table 4 tp limited by Tvj op Values Unit 900 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 450 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.50 2.75 Tvj = 125 °C 2.90 Tvj = 150 °C 3.00 3.30 5.80 6.40 IC = 12 mA, VCE = VGE, Tvj = 25 °C 5.20 V V VGE = ±15 V, VCE = 1800 V 12.5 µC Internal gate resistor RGint Tvj = 25 °C 1.3 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 84 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 2 nF Collector-emitter cut-off current ICES VCE = 3300 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 450 A, VCE = 1800 V, VGE = ±15 V, RGon = 0.7 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on time (resistive load) tr tdoff tf ton_R IC = 450 A, VCE = 1800 V, VGE = ±15 V, RGon = 0.7 Ω IC = 450 A, VCE = 1800 V, VGE = ±15 V, RGoff = 3.3 Ω IC = 450 A, VCE = 1800 V, VGE = ±15 V, RGoff = 3.3 Ω IC = 500 A, VCE = 2000 V, VGE = ±15 V, RGon = 0.7 Ω Tvj = 25 °C Tvj = 25 °C 0.530 Tvj = 125 °C 0.570 Tvj = 150 °C 0.580 Tvj = 25 °C 0.100 Tvj = 125 °C 0.130 Tvj = 150 °C 0.130 Tvj = 25 °C 1.710 Tvj = 125 °C 1.860 Tvj = 150 °C 1.920 Tvj = 25 °C 0.130 Tvj = 125 °C 0.240 Tvj = 150 °C 0.270 Tvj = 25 °C 1.15 5 mA 400 nA µs µs µs µs µs (table continues...) Datasheet 4 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Eon Eoff ISC IC = 450 A, VCE = 1800 V, Lσ = 85 nH, VGE = ±15 V, RGon = 0.7 Ω, di/dt = 3650 A/µs (Tvj = 150 °C) Tvj = 25 °C 500 Tvj = 125 °C 765 Tvj = 150 °C 845 IC = 450 A, VCE = 1800 V, Lσ = 85 nH, VGE = ±15 V, RGoff = 3.3 Ω, dv/dt = 2850 V/µs (Tvj = 150 °C) Tvj = 25 °C 415 Tvj = 125 °C 610 Tvj = 150 °C 670 VGE ≤ 15 V, VCC = 2500 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj ≤ 150 °C 1800 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op 3 Max. mJ mJ A 28.4 17.4 -40 K/kW K/kW 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I 2t Maximum power dissipation PRQM Minimum turn-on time tonmin Datasheet Typ. Unit Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 450 A 900 A Tvj = 125 °C 82.9 kA²s Tvj = 150 °C 68 Tvj = 150 °C 1000 kW 10 µs tP = 1 ms tP = 10 ms, VR = 0 V 5 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 3 Diode, Inverter Table 6 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Typ. Max. Tvj = 25 °C 3.10 3.50 Tvj = 125 °C 2.75 Tvj = 150 °C 2.65 Tvj = 25 °C 680 Tvj = 125 °C 680 Tvj = 150 °C 680 VR = 1800 V, IF = 450 A, VGE = -15 V, -diF/dt = 3650 A/µs (Tvj = 150 °C) Tvj = 25 °C 230 Tvj = 125 °C 445 Tvj = 150 °C 525 VR = 1800 V, IF = 450 A, VGE = -15 V, -diF/dt = 3650 A/µs (Tvj = 150 °C) Tvj = 25 °C 220 Tvj = 125 °C 490 Tvj = 150 °C 595 IF = 450 A, VGE = 0 V VR = 1800 V, IF = 450 A, VGE = -15 V, -diF/dt = 3650 A/µs (Tvj = 150 °C) Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Datasheet Unit 2.95 A µC mJ 45.5 19.3 -40 6 V K/kW K/kW 150 °C Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 4 Characteristics diagrams 4 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 900 900 750 750 600 600 450 450 300 300 150 150 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.3 Ω, RGon = 0.7 Ω, VCE = 1800 V, VGE = ± 15 V 900 2500 2250 750 2000 1750 600 1500 450 1250 1000 300 750 500 150 250 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 7 150 300 450 600 750 900 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 4 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 450 A, VCE = 1800 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3.3 Ω, RGon = 0.7 Ω, VCE = 1800 V, VGE = ± 15 V, Tvj = 150 °C 10 2400 2200 2000 1800 1 1600 1400 1200 1000 800 0.1 600 400 200 0 0.01 0 1 2 3 4 5 6 7 8 9 10 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 450 A, VCE = 1800 V, VGE = ± 15 V, Tvj = 150 °C 100 1 10 0.1 Datasheet 1 2 3 4 5 6 7 8 300 450 600 750 900 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 0 150 9 1 0.001 10 8 0.01 0.1 1 10 100 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 4 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.3 Ω, VGE = ±15 V, Tvj = 150 °C Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C 1050 140 130 900 120 110 750 100 90 600 80 70 450 60 50 300 40 30 150 20 10 0 0 0 500 1000 1500 2000 2500 3000 3500 0.1 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 450 A, Tvj = 25 °C 1 10 100 Forward characteristic (typical), Diode, Inverter IF = f(VF) 900 15 12 750 9 6 600 3 0 450 -3 300 -6 -9 150 -12 -15 0 0 Datasheet 2 4 6 8 10 12 14 0.0 9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 4 Characteristics diagrams Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 1800 V, RGon = RGon(IGBT) Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 1800 V, IF = 450 A 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0 150 300 450 600 750 900 0 Transient thermal impedance, Diode, Inverter Zth = f(t) 1 2 3 4 5 6 7 3000 3500 Safe operating area (SOA), Diode, Inverter IR = f(VR) Tvj = 150 °C 100 1050 900 750 600 10 450 300 150 1 0.001 Datasheet 0 0.01 0.1 1 10 0 100 10 500 1000 1500 2000 2500 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 02.08.2021 Beispiel für A.Schulz 5 Circuit diagram 5 Circuit diagram 2 7 T1 D1 8 9 3,4 T2 D2 5 1 6 10: NC Figure 1 Beispiel: PrimePACK-3+ Costdown Common Collektor xx.03.2019 mit WW, Jürgen Esch 9,11,13 NTC 6 7 4 J t Datasheet 3 11 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 6 Package outlines 6 Package outlines 43 33,5 22 0 22 33,5 43 (99,8) (4x)( 8,5) C 74 63,5 (6x) 7mm screwing depth 29,5 (144) (140) 127 20 0 ( 20 4, 6) M3 ) (6x A 0,8 A B C (6x) 6,6 0,2 40 0,4 (4x) (18) 1ABC (4x) 86 36 0,4 B (4x)M8 0 4 0,3 59 63,5 70 (4x) 16mm screwing depth (3x)(18) (21) 3,1 29,5 Figure 2 Datasheet 12 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 13 Revision 1.20 2022-04-06 FF450R33T3E3 XHP™3 module Revision history Revision history Document revision Date of release Description of changes V1.0 2013-12-05 Target datasheet V1.1 2014-08-25 Target datasheet V1.2 2015-01-22 Target datasheet V1.3 2015-10-16 Target datasheet V1.4 2015-10-16 Target datasheet V2.0 2016-05-18 Preliminary datasheet V2.1 2016-09-02 Preliminary datasheet V2.2 2016-12-23 Preliminary datasheet V2.3 2018-02-14 Preliminary datasheet V3.0 2018-12-12 Final datasheet V3.1 2018-12-13 Final datasheet V3.2 2020-01-27 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-11-04 Final datasheet 1.20 2022-04-06 Final datasheet Datasheet 14 Revision 1.20 2022-04-06 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-04-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAX244-014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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