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FF750R12ME7B11BPSA1

FF750R12ME7B11BPSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    模块

  • 描述:

    ECONODUAL 3 WITH TRENCHSTOP IGBT

  • 数据手册
  • 价格&库存
FF750R12ME7B11BPSA1 数据手册
FF750R12ME7_B11 EconoDUAL™3 module EconoDUAL™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 750 A / ICRM = 1500 A - Integrated temperature sensor - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechanical features - PressFIT contact technology - Standard housing - Isolated base plate - High power density Potential applications • • • • • Commercial agriculture vehicles High-power converters Motor drives Servo drives UPS systems Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 3.4 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 15.0 mm Creepage distance dCreep terminal to terminal 13.0 mm Clearance dClear terminal to heatsink 12.5 mm Clearance dClear terminal to terminal 10.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip Storage temperature LsCE RCC'+EE' TC=25°C, per switch Tstg Typ. Max. 20 nH 0.8 mΩ -40 125 °C Mounting torque for module mounting M - Mounting according to M5, Screw valid application note 3 6 Nm Terminal connection torque M - Mounting according to M6, Screw valid application note 3 6 Nm Weight G 2 Table 3 345 g Values Unit Tvj = 25 °C 1200 V TC = 90 °C 750 A TTerminal = 90 °C, TC = 90 °C 580 A TTerminal = 105 °C, TC = 90 °C 565 IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Maximum RMS module DCterminal current ItRMS Tvj max = 175 °C (table continues...) Datasheet 3 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Repetitive peak collector current ICRM Gate-emitter peak voltage VGES Table 4 tP = 1 ms Values Unit 1500 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 750 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.50 1.75 V Tvj = 125 °C 1.65 Tvj = 175 °C 1.75 6.45 V IC = 15 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 VGE = ±15 V, VCE = 600 V 12 µC Internal gate resistor RGint Tvj = 25 °C 0.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 115 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.58 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 750 A, VCE = 600 V, VGE = ±15 V, RGon = 0.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse tr tdoff tf Eon IC = 750 A, VCE = 600 V, VGE = ±15 V, RGon = 0.5 Ω IC = 750 A, VCE = 600 V, VGE = ±15 V, RGoff = 0.5 Ω IC = 750 A, VCE = 600 V, VGE = ±15 V, RGoff = 0.5 Ω IC = 750 A, VCE = 600 V, Lσ = 25 nH, VGE = ±15 V, RGon = 0.5 Ω, di/dt = 7000 A/µs (Tvj = 175 °C) Tvj = 25 °C Tvj = 25 °C 0.300 Tvj = 125 °C 0.320 Tvj = 175 °C 0.340 Tvj = 25 °C 0.079 Tvj = 125 °C 0.086 Tvj = 175 °C 0.090 Tvj = 25 °C 0.470 Tvj = 125 °C 0.550 Tvj = 175 °C 0.600 Tvj = 25 °C 0.110 Tvj = 125 °C 0.240 Tvj = 175 °C 0.350 Tvj = 25 °C 53 Tvj = 125 °C 86 Tvj = 175 °C 107 45 µA 100 nA µs µs µs µs mJ (table continues...) Datasheet 4 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse SC data Eoff ISC IC = 750 A, VCE = 600 V, Lσ = 25 nH, VGE = ±15 V, RGoff = 0.5 Ω, dv/dt = 3100 V/µs (Tvj = 175 °C) Tvj = 25 °C 65 Tvj = 125 °C 97.5 Tvj = 175 °C 121 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 2900 tP ≤ 6 µs, Tvj = 175 °C 2800 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Typ. Unit Max. mJ A 0.0520 K/W 0.0260 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 6 I2t Values Unit 1200 V 750 A 1500 A Tvj = 125 °C 28700 A²s Tvj = 175 °C 20500 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 750 A, VGE = 0 V Unit Typ. Max. Tvj = 25 °C 1.80 2.10 Tvj = 125 °C 1.70 Tvj = 175 °C 1.60 V (table continues...) Datasheet 5 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 4 NTC-Thermistor Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec VR = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 7000 A/µs (Tvj = 175 °C) Tvj = 25 °C 400 Tvj = 125 °C 485 Tvj = 175 °C 561 VR = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 7000 A/µs (Tvj = 175 °C) Tvj = 25 °C 48 Tvj = 125 °C 84 Tvj = 175 °C 131 VR = 600 V, IF = 750 A, VGE = -15 V, -diF/dt = 7000 A/µs (Tvj = 175 °C) Tvj = 25 °C 20 Tvj = 125 °C 32 Tvj = 175 °C 53 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. A µC mJ 0.101 0.0380 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance Max. Power dissipation ΔR/R TNTC = 25 °C B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet R25 Typ. Unit P25 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW Specification according to the valid application note. 6 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams 5 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 1500 1500 1350 1350 1200 1200 1050 1050 900 900 750 750 600 600 450 450 300 300 150 150 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 0.5 Ω, RGon = 0.5 Ω, VCE = 600 V, VGE = -15 / 15 V 1500 700 1350 600 1200 500 1050 900 400 750 300 600 450 200 300 100 150 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 7 250 500 750 1000 1250 1500 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Switching times (typical), IGBT, Inverter switching losses (typical), IGBT, Inverter t = f(IC) E = f(RG) RGoff = 0.5 Ω, RGon = 0.5 Ω, VGE = ±15 V, VCE = 600 V, Tvj = 175 IC = 750 A, VCE = 600 V, VGE = -15 / 15 V °C 10 400 350 300 1 250 200 150 0.1 100 50 0 0.01 0 250 500 750 1000 1250 1500 0 transient thermal impedance , IGBT, Inverter Zth = f(t) 1 2 3 4 5 4 5 Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 750 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 1 8 7 6 0.1 5 4 3 0.01 2 1 0.001 0.001 Datasheet 0 0.01 0.1 1 0 10 8 1 2 3 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Switching times (typical), IGBT, Inverter t = f(RG) VGE = ±15 V, IC = 750 A, VCE = 600 V, Tvj = 175 °C reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 0.5 Ω, VGE = ±15 V, Tvj = 175 °C 10 1750 1500 1250 1 1000 750 0.1 500 250 0 0.01 0 1 2 3 4 5 0 capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 200 400 600 800 1000 1200 1400 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 750 A, Tvj = 25 °C 1000 15 12 100 9 6 10 3 0 1 -3 -6 0.1 -9 -12 0.01 -15 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0 9 1 2 3 4 5 6 7 8 9 10 11 12 13 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 600 V, RGon = RGon(IGBT) 1500 70 1350 60 1200 50 1050 900 40 750 30 600 450 20 300 10 150 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 750 A 250 500 750 1000 1250 1500 transient thermal impedance , Diode, Inverter Zth = f(t) 1 70 60 50 0.1 40 30 0.01 20 10 0 0 Datasheet 1 2 3 4 0.001 0.001 5 10 0.01 0.1 1 10 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 11 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 6 Circuit diagram 6 Circuit diagram 4 9 T1 D1 7 6 8 5 T2 D2 1 2 3 W00194210.00 10,11 NTC Figure 1 Datasheet 12 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 7 Package outlines 7 Package outlines 1ADE Terminals (6,5) 17 (20,5) (3,5) Kennzeichnungsfl che Label-side A 3 152 0,5 E 122 0,5 C ,5) ( 5 0,4 A B C 0,4 A D E 8 7 ,5) ( 5 9 6 5 11 ( 5,5) (min. 78,0) 25 28,75 ( 5,5) 0,4 A D E 68,5 2x 47,25 0 55 47,25 0,4 A B C 2 Schraubenempfehlung: screw recommendation: EJOT PT K 25x10 WN1451 EJOT DELTA PT 25x10 WN5451 55 1 55 B 68,5 ( 6,4) 0 3 (min. 100,0) 25 4x 4x M6 X (min. 20,0) Y (min. 38,0) 62 0,2 11 11 24,444 305 120,8 62,5 0,2 0,6 A D E 4 10 D 28,75 25 Wave-Fl che wave-area 18,05 10,05 0 10,05 39,8 42,8 42,8 39,8 0 18,05 M 7x + 1 - 0,09 0,06 4x 0,05 M-M 2,8 +- 0,1 0 0,4 M-M 4x 7x 29,2 28,75 Y X 0 W00191760.00 - PCB: Durchmesser des metallisierten Loches - PCB: diameter of plated hole 47,25 36,19 40 0 17,15 13,33 40 47,25 28,75 29,2 Figure 2 Datasheet 13 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 14 Revision 1.10 2021-10-11 FF750R12ME7_B11 EconoDUAL™3 module Revision history Revision history Document revision Date of release Description of changes V1.0 2019-11-06 Target datasheet 0.11 2020-11-24 Target datasheet 1.00 2021-05-27 Final datasheet 1.10 2021-10-11 Final datasheet Datasheet 15 Revision 1.10 2021-10-11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-11 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAY184-004 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.
FF750R12ME7B11BPSA1 价格&库存

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FF750R12ME7B11BPSA1
  •  国内价格
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FF750R12ME7B11BPSA1
  •  国内价格
  • 1+5183.71901
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  • 100+4978.47260
  • 250+4878.96834
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FF750R12ME7B11BPSA1
  •  国内价格
  • 10+5080.15336
  • 100+4978.47260
  • 250+4878.96834
  • 500+4781.18236

库存:0