FF750R17ME7DB11BPSA1

FF750R17ME7D_B11 EconoDUAL™3 module EconoDUAL™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 1700 V - IC nom = 750 A / ICRM = 1500 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Enlarged diode for regenerative operation • Mechanical features - High power density - Isolated base plate - PressFIT contact technology - Standard housing Potential applications • • • • • High-power converters Medium-voltage converters Motor drives Wind turbines Power transmission and distribution Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 3.4 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 15.0 mm Creepage distance dCreep terminal to terminal 13.0 mm Clearance dClear terminal to heatsink 12.5 mm Clearance dClear terminal to terminal 10.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 200 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G Table 3 Values Unit TC=25°C, per switch Typ. Max. 20 nH 0.8 mΩ -40 125 °C - Mounting according to M5, Screw valid application note 3 6 Nm - Mounting according to M6, Screw valid application note 3 6 Nm 345 g Values Unit Tvj = 25 °C 1700 V TC = 80 °C 750 A TTerminal = 90 °C, TC = 90 °C 580 A TTerminal = 105 °C, TC = 90 °C 565 IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Maximum RMS module DCterminal current ItRMS (table continues...) Datasheet °C Characteristic values Parameter 2 140 Tvj max = 175 °C 3 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Repetitive peak collector current ICRM Gate-emitter peak voltage VGES Table 4 tp limited by Tvj op Values Unit 1500 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 750 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.70 1.85 V Tvj = 125 °C 1.95 Tvj = 150 °C 2.05 Tvj = 175 °C 2.10 6.45 V IC = 15.7 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 VGE = ±15 V, VCE = 900 V 7.15 µC Internal gate resistor RGint Tvj = 25 °C 0.33 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 78.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.275 nF Collector-emitter cut-off current ICES VCE = 1700 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 750 A, VCE = 900 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.51 Ω Tvj = 125 °C 0.158 Tvj = 150 °C 0.178 Tvj = 175 °C 0.184 IC = 750 A, VCE = 900 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.51 Ω Tvj = 125 °C 0.046 Tvj = 150 °C 0.055 Tvj = 175 °C 0.057 Tvj = 25 °C 0.536 Tvj = 125 °C 0.613 Tvj = 150 °C 0.631 Tvj = 175 °C 0.648 Rise time (inductive load) Turn-off delay time (inductive load) tr tdoff IC = 750 A, VCE = 900 V, VGE = ±15 V, RGoff = 2.2 Ω Tvj = 25 °C 5 mA 100 nA µs 0.172 µs 0.053 µs (table continues...) Datasheet 4 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC IC = 750 A, VCE = 900 V, VGE = ±15 V, RGoff = 2.2 Ω IC = 750 A, VCE = 900 V, Lσ = 25 nH, VGE = ±15 V, RGon = 0.51 Ω, di/dt = 11.1 kA/µs (Tvj = 175 °C) IC = 750 A, VCE = 900 V, Lσ = 25 nH, VGE = ±15 V, RGoff = 2.2 Ω, dv/dt = 3600 V/µs (Tvj = 175 °C) VGE = 15 V, VCC = 1000 V, VCEmax=VCES-LsCE*di/dt Tvj = 25 °C 0.231 Tvj = 125 °C 0.450 Tvj = 150 °C 0.525 Tvj = 175 °C 0.599 Tvj = 25 °C 74 Tvj = 125 °C 171 Tvj = 150 °C 204 Tvj = 175 °C 238 Tvj = 25 °C 132 Tvj = 125 °C 208 Tvj = 150 °C 224 Tvj = 175 °C 239 tP ≤ 8 µs, Tvj=150 °C 2600 tP ≤ 6 µs, Tvj=175 °C 2500 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease = 1 W/(m·K) Temperature under switching conditions Tvj op Note: 3 Table 5 Typ. Unit Max. µs mJ mJ A 0.0551 0.0345 -40 K/W K/W 175 °C Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. Diode, Inverter Maximum rated values Parameter Symbol Note or test condition Tvj = 25 °C Values Unit 1700 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 1200 A Continuous DC forward current IF 750 A (table continues...) Datasheet 5 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 3 Diode, Inverter Table 5 (continued) Maximum rated values Parameter Symbol Note or test condition Repetitive peak forward current I2t - value IFRM I2t Table 6 Values Unit 1500 A Tvj = 125 °C 48300 A²s Tvj = 175 °C 37200 tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Typ. Max. Tvj = 25 °C 2.00 2.15 Tvj = 125 °C 1.85 Tvj = 150 °C 1.80 Tvj = 175 °C 1.75 VR = 900 V, IF = 750 A, Tvj = 25 °C VGE = -15 V, -diF/dt = 11.8 Tvj = 125 °C kA/µs (Tvj = 175 °C) Tvj = 150 °C 950 1020 Tvj = 175 °C 1020 VR = 900 V, IF = 750 A, Tvj = 25 °C VGE = -15 V, -diF/dt = 11.8 Tvj = 125 °C kA/µs (Tvj = 175 °C) Tvj = 150 °C 115 218 Tvj = 175 °C 292 VR = 900 V, IF = 750 A, Tvj = 25 °C VGE = -15 V, -diF/dt = 11.8 Tvj = 125 °C kA/µs (Tvj = 175 °C) Tvj = 150 °C 76 132 Tvj = 175 °C 171 IF = 750 A, VGE = 0 V Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease = 1 W/(m·K) Temperature under switching conditions Tvj op Note: Datasheet Unit V A 1020 µC 255 mJ 152 0.0753 0.0363 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 6 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 4 NTC-Thermistor 4 NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 7 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 5 Characteristics diagrams 5 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 1500 1500 1250 1250 1000 1000 750 750 500 500 250 250 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 2.2 Ω, RGon = 0.51 Ω, VCE = 900 V, VGE = ± 15 V 1500 1200 1100 1250 1000 900 1000 800 700 750 600 500 500 400 300 250 200 100 0 0 4 Datasheet 5 6 7 8 9 10 11 12 13 14 0 8 250 500 750 1000 1250 1500 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 5 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 750 A, VCE = 900 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 2.2 Ω, RGon = 0.51 Ω, VCE = 900 V, VGE = ± 15 V, Tvj = 175 °C 10 600 500 1 400 300 200 0.1 100 0 0.01 0 1 2 3 4 5 6 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 750 A, VCE = 900 V, VGE = ± 15 V, Tvj = 175 °C 150 300 450 600 750 900 1050 1200 1350 1500 Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 750 A, VCE = 900 V, VGE = ±15 V, Tvj = 25 °C 10 20 18 16 14 1 12 10 8 0.1 6 4 2 0 0.01 0 Datasheet 1 2 3 4 5 6 0 9 1 2 3 4 5 6 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 5 Characteristics diagrams Transient thermal impedance , IGBT, Inverter Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 2.2 Ω, VGE = ±15 V, Tvj = 175 °C 0.1 1800 1650 1500 1350 1200 1050 900 0.01 750 600 450 300 150 0 0.001 0.001 0.01 0.1 1 0 10 Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 200 400 600 800 1000 1200 1400 1600 1800 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 750 A, Tvj = 25 °C 1000 15 13 11 100 9 7 5 10 3 1 -1 -3 1 -5 -7 -9 0.1 -11 -13 -15 0.01 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0 10 1 2 3 4 5 6 7 8 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 5 Characteristics diagrams Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 0.51 Ω, VCE = 900 V 1500 220 200 1250 180 160 1000 140 120 750 100 80 500 60 40 250 20 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 900 V, IF = 750 A 250 500 750 1000 1250 1500 Transient thermal impedance, Diode, Inverter Zth = f(t) 0.1 250 225 200 175 150 125 0.01 100 75 50 25 0 0 Datasheet 1 2 3 4 5 0.001 0.001 6 11 0.01 0.1 1 10 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 5 Characteristics diagrams Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 12 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 6 Circuit diagram 6 Circuit diagram 4 9 T1 D1 7 6 8 5 T2 D2 1 2 3 W00194210.00 10,11 NTC Figure 1 Datasheet 13 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 7 Package outlines 7 Package outlines Kennzeichnungsfl che Label-side (3,5) (6,5) 17 (20,5) 1ADE Terminals A 152 0,5 122 0,5 C E ,5) ( 5 0,4 A B C 0,4 A D E 8 7 6 5 ,5) ( 5 9 (min. 20,0) X 25 11 ( 5,5) (min. 78,0) 25 28,75 ( 5,5) Schraubenempfehlung: screw recommendation: EJOT PT K 25x10 WN1451 EJOT DELTA PT 25x10 WN5451 0,4 A D E 68,5 2x 47,25 0 47,25 55 2 55 1 55 B 68,5 ( 6,4) 0 3 (min. 100,0) D 4x 4x M6 Y (min. 38,0) 11 11 24,444 5 830 120, 62 0,2 0,6 A D E 4 10 62,5 0,2 28,75 25 0,4 A B C M 7x + 1 - 0,09 0,06 4x 0,05 M-M 2,8 +- 0,1 0 7x 0,4 M-M 4x 29,2 28,75 Y X 0 47,25 36,19 40 9,53 13,34 0 17,15 13,33 40 47,25 28,75 29,2 - PCB: Durchmesser des metallisierten Loches - PCB: diameter of plated hole Figure 2 Datasheet 14 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 15 Revision 1.00 2022-05-06 FF750R17ME7D_B11 EconoDUAL™3 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-10-20 Initial version 1.00 2022-05-06 Final datasheet Datasheet 16 Revision 1.00 2022-05-06 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-05-06 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB561-002 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.