FF800R12KE3

Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral I²t value Isolations Prüfspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125°C Tvj= 25°C Tc= 80°C Tc= 25°C tp= 1ms, Tc= 80°C Tc= 25°C; Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM 1200 800 1200 1600 V A A A 3,9 kW +/- 20 V 800 A 1600 A I²t 140 k A²s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter satration voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC= 800A, VGE= 15V, Tvj= 25°C, IC= 800A, VGE= 15V, Tvj= 125°C, IC= 32mA, VCE= VGE, Tvj= 25°C, VGE= -15V...+15V; VCE=...V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VGE= 0V, Tvj= 25°C, VCE= 1200V VCE= 0V, VGE= 20V, Tvj= 25°C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5 typ. 1,7 2 5,8 max. 2,15 t.b.d. 6,5 V V V - 7,7 - µC - 57 - nF - 2,7 - nF - - 5 mA - - 400 nA prepared by: MOD-D2; Mark Münzer approved: SM TM; Christoph Lübke date of publication: 2002-07-30 revision: 2.0 1 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter IC= 800A, VCC= 600V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE=±15V, RGon=3,3W, T vj=25°C VGE=±15V, RGon=3,3W, T vj= 125°C min. td,on tr typ. 0,60 0,66 max. µs µs IC= 800A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE=±15V, RGon=3,3W, T vj=25°C VGE=±15V, RGon=3,3W, T vj= 125°C - 0,23 0,22 - µs µs IC= 800A, VCC= 600V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE=±15V, RGoff =0,39W, T vj=25°C VGE=±15V, RGoff =0,39W,T vj= 125°C td,off - 0,82 0,96 - µs µs IC= 800A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulindiktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25°C VGE=±15V, RGoff =0,39W, T vj=25°C VGE=±15V, RGoff =0,39W,T vj= 125°C tf - 0,15 0,18 160 - µs µs mJ IC= 800A, VCC= 600V, Ls= 90nH VGE=±15V, RGon=3,3W, T vj= 125°C Eon Eoff ISC LsCE RCC´/EE´ - IC= 800A, VCC= 600V, Ls= 90nH VGE=±15V, RGoff =0,39W, T vj= 125°C - 125 - mJ tP £ 10µs, VGE £ 15V, TVj £ 125°C VCC= 900V, VCEmax= VCES - LsCE · çdi/dtç - 3200 - A - 20 - nH - 0,18 - mW Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current IF= IC, nom, VGE= 0V, Tvj= 25°C IF= IC, nom, VGE= 0V, Tvj= 125°C IF=IC,nom, -diF/dt= 3600A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Sperrverzögerungsladung recoverred charge IF=IC,nom, -diF/dt= 3600A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie pro Puls reverse recovery energy IF=IC,nom, -diF/dt= 3600A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Erec 9 24 mJ mJ Qr 37 90 µC µC IRM 260 400 A A VF 2,2 2 2,8 V V 2 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Thermische Eigenschaften / thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Transistor, DC, pro Modul / per module Transistor, DC, pro Zweig / per arm Diode/Diode, DC, pro Modul / per module Diode/Diode, DC, pro Zweig / per arm Übergangs Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Modul / per module pro Zweig/ per arm; Paste/lgrease =1W/m*K l RthCK Tvj max Tvj op Tstg RthJC typ. 0,006 0,012 max. 0,016 0,032 0,032 0,064 150 K/W K/W K/W K/W K/W K/W °C -40 - 125 °C -40 - 125 °C Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlüsse terminal connection torque Schraube / screw M5 M 4,25 Al2O3 32 mm 20 mm >400 - 5,75 Nm Anschlüsse / terminal M4 M 1,7 - 2,3 Nm Anschlüsse / terminal M8 Gewicht weight M 8 - 10 Nm G 1500 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 1600 1400 1200 1000 IC [A] 800 600 400 200 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 Tvj = 25°C Tvj = 125°C IC= f(VCE) VGE= 15V 2,5 3,0 3,5 Ausgangskennlinienfeld (typisch) output characteristic (typical) 1600 1400 Vge=19V IC= f(VCE) Tvj= 125°C 1200 1000 IC [A] 800 600 400 200 0 0,0 0,5 Vge=17V Vge=15V Vge=13V Vge=11V Vge=9V 1,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 4,0 4,5 5,0 4 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Übertragungscharakteristik (typisch) transfer characteristic (typical) 1600 1400 Tvj=25°C IC= f(VGE) VCE= 20V 1200 1000 IC [A] 800 600 400 200 0 5 6 Tvj=125°C 7 8 9 VGE [V] 10 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) 1600 1400 Tvj = 25°C IF= f(VF) 1200 1000 IF [A] 800 600 400 200 0 Tvj = 125°C 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 VF [V] DB_FF800R12KE3_2.0.xls 2002-07-30 5 (8) Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Schaltverluste (typisch) Switching losses (typical) 500 450 400 350 300 E [mJ] 250 200 150 100 50 0 0 200 400 600 Eon Eoff Erec Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=±15V, Rgon=3,3W, Rgoff=0,39W, VCE=600V, Tvj=125°C 800 IC [A] 1000 1200 1400 1600 Schaltverluste (typisch) Switching losses (typical) 500 450 400 350 E [mJ] 300 250 200 150 100 50 0 0 2 4 6 8 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V, IC=800A, VCE=600V, Tvj=125°C 10 12 RG [W] 14 16 18 20 22 24 6 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Transienter Wärmewiderstand Transient thermal impedance 0,1 ZthJC = f (t) ZthJC [K/W] 0,01 Zth : IGBT Zth : Diode 0,001 0,001 0,01 0,1 t [s] 1 10 i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode 1 13,45 6,897E-01 18,37 4,452E-01 2 16,12 5,634E-02 20,16 7,451E-02 3 1,83 2,997E-02 21,17 2,647E-02 4 0,60 3,820E-03 4,30 2,850E-03 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 1800 1600 1400 1200 IC [A] 1000 800 600 400 200 0 0 200 400 600 IC,Chip IC,Chip VGE=±15V, T vj=125°C 800 1000 1200 1400 VCE [V] DB_FF800R12KE3_2.0.xls 2002-07-30 7 (8) Technische Information / technical information IGBT-Module IGBT-Modules FF800R12KE3 vorläufige Daten preliminary data Gehäusemaße / Schaltbild Package outline / Circuit diagram 8 (8) DB_FF800R12KE3_2.0.xls 2002-07-30 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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