FF900R17ME7B11BPSA1

FF900R17ME7_B11 EconoDUAL™3 module EconoDUAL™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1700 V - IC nom = 900 A / ICRM = 1800 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient • Mechanical features - High power density - Isolated base plate - PressFIT contact technology - Standard housing Potential applications • • • • High-power converters Medium-voltage converters Motor drives Wind turbines Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 3.4 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 15.0 mm Creepage distance dCreep terminal to terminal 13.0 mm Clearance dClear terminal to heatsink 12.5 mm Clearance dClear terminal to terminal 10.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >200 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G Table 3 Values Unit T=25°C, per switch Typ. Max. 20 nH 0.8 mΩ -40 125 °C - Mounting according to M5, Screw valid application note 3 6 Nm - Mounting according to M6, Screw valid application note 3 6 Nm 345 g Values Unit Tvj = 25 °C 1700 V TC = 80 °C 900 A TTerminal = 90 °C, TC = 90 °C 580 A TTerminal = 105 °C, TC = 90 °C 565 IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Maximum RMS module DCterminal current ItRMS (table continues...) Datasheet °C Characteristic values Parameter 2 140 Tvj max = 175 °C 3 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Repetitive peak collector current ICRM Gate-emitter peak voltage VGES Table 4 tP = 1 ms Values Unit 1800 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 900 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.70 1.85 V Tvj = 125 °C 1.95 Tvj = 150 °C 2.05 Tvj = 175 °C 2.10 6.45 V IC = 18.8 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 VGE = ±15 V, VCE = 900 V 8.59 µC Internal gate resistor RGint Tvj = 25 °C 0.28 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 93.8 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.33 nF Collector-emitter cut-off current ICES VCE = 1700 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 900 A, VCE = 900 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.33 Ω Tvj = 125 °C 0.174 Tvj = 150 °C 0.202 Tvj = 175 °C 0.207 IC = 900 A, VCE = 900 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.33 Ω Tvj = 125 °C 0.054 Tvj = 150 °C 0.061 Tvj = 175 °C 0.065 Tvj = 25 °C 0.738 Tvj = 125 °C 0.828 Tvj = 150 °C 0.850 Tvj = 175 °C 0.865 Rise time (inductive load) Turn-off delay time (inductive load) tr tdoff IC = 900 A, VCE = 900 V, VGE = ±15 V, RGoff = 3 Ω Tvj = 25 °C 5 mA 100 nA µs 0.195 µs 0.060 µs (table continues...) Datasheet 4 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC IC = 900 A, VCE = 900 V, VGE = ±15 V, RGoff = 3 Ω Tvj = 25 °C 0.202 Tvj = 125 °C 0.432 Tvj = 150 °C 0.504 Tvj = 175 °C 0.573 IC = 900 A, VCE = 900 V, Tvj = 25 °C Lσ = 25 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.33 Ω, di/dt = 12300 A/µs (Tvj = 175 °C) Tvj = 150 °C 54.6 Tvj = 175 °C 205 Tvj = 25 °C 163 Tvj = 125 °C 245 Tvj = 150 °C 271 Tvj = 175 °C 297 tP ≤ 8 µs, Tvj=150 °C 3000 tP ≤ 6 µs, Tvj=175 °C 2900 IC = 900 A, VCE = 900 V, Lσ = 25 nH, VGE = ±15 V, RGoff = 3 Ω, dv/dt = 3800 V/µs (Tvj = 175 °C) VGE = 15 V, VCC = 1000 V, VCEmax=VCES-LsCE*di/dt Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Table 5 Typ. Unit Max. µs mJ 138 172 mJ A 0.0460 0.0270 -40 K/W K/W 175 °C Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. Diode, Inverter Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM Tvj = 25 °C tP = 1 ms Values Unit 1700 V 900 A 1800 A (table continues...) Datasheet 5 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 3 Diode, Inverter Table 5 (continued) Maximum rated values Parameter Symbol Note or test condition I2t - value I2t Table 6 tP = 10 ms, VR = 0 V Values Unit Tvj = 125 °C 40200 A²s Tvj = 175 °C 27000 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Typ. Max. Tvj = 25 °C 2.35 2.50 Tvj = 125 °C 2.25 Tvj = 150 °C 2.20 Tvj = 175 °C 2.10 VR = 900 V, IF = 900 A, Tvj = 25 °C VGE = -15 V, -diF/dt = T = 125 °C 12900 A/µs (Tvj = 175 °C) vj Tvj = 150 °C 992 1130 Tvj = 175 °C 1170 VR = 900 V, IF = 900 A, Tvj = 25 °C VGE = -15 V, -diF/dt = T = 125 °C 12900 A/µs (Tvj = 175 °C) vj Tvj = 150 °C 119 240 Tvj = 175 °C 272 VR = 900 V, IF = 900 A, Tvj = 25 °C VGE = -15 V, -diF/dt = T = 125 °C 12900 A/µs (Tvj = 175 °C) vj Tvj = 150 °C 86 141 Tvj = 175 °C 176 IF = 900 A, VGE = 0 V Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: Datasheet Unit V A 1140 µC 210 mJ 159 0.0885 0.0370 -40 K/W K/W 175 °C Tvjop > 150 °C is only allowed for operation at overload conditions. For detailed specifications please refer to AN 2018-14. 6 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 4 NTC-Thermistor 4 NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 7 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams 5 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 1800 1800 1500 1500 1200 1200 900 900 600 600 300 300 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3 Ω, RGon = 0.33 Ω, VCE = 900 V, VGE = ± 15 V 1800 1600 1400 1500 1200 1200 1000 900 800 600 600 400 300 200 0 0 4 Datasheet 5 6 7 8 9 10 11 12 13 14 0 8 300 600 900 1200 1500 1800 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 900 A, VCE = 900 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3 Ω, RGon = 0.33 Ω, VCE = 900 V, VGE = ± 15 V, Tvj = 175 °C 1000 10 800 1 600 400 0.1 200 0 0.01 0 1 2 3 4 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 900 A, VCE = 900 V, VGE = ± 15 V, Tvj = 175 °C 300 600 900 1200 1500 1800 Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 900 A, VCE = 900 V, VGE = ±15 V, Tvj = 25 °C 12 11 10 10 9 8 7 1 6 5 4 0.1 3 2 1 0 0.01 0 Datasheet 1 2 3 4 0 9 1 2 3 4 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Transient thermal impedance , IGBT, Inverter Zth = f(t) Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3 Ω, VGE = ±15 V, Tvj = 175 °C 0.1 2200 2000 1800 1600 1400 1200 0.01 1000 800 600 400 200 0 0.001 0.001 0.01 0.1 1 0 10 Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 200 400 600 800 1000 1200 1400 1600 1800 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 900 A, Tvj = 25 °C 1000 15 13 11 100 9 7 5 10 3 1 -1 -3 1 -5 -7 -9 0.1 -11 -13 -15 0.01 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0 10 2 4 6 8 10 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 0.33 Ω, VCE = 900 V 1800 250 225 1500 200 175 1200 150 900 125 100 600 75 50 300 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 900 V, IF = 900 A 300 600 900 1200 1500 1800 Transient thermal impedance, Diode, Inverter Zth = f(t) 0.1 250 225 200 175 150 125 0.01 100 75 50 25 0 0 Datasheet 1 2 3 0.001 0.001 4 11 0.01 0.1 1 10 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 5 Characteristics diagrams Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 12 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 6 Circuit diagram 6 Circuit diagram 4 9 T1 D1 7 6 8 5 T2 D2 1 2 3 W00194210.00 10,11 NTC Figure 1 Datasheet 13 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 7 Package outlines 7 Package outlines Kennzeichnungsfl che Label-side (3,5) (6,5) 17 (20,5) 1ADE Terminals A 152 0,5 122 0,5 C E ,5) ( 5 0,4 A B C 0,4 A D E 8 7 6 5 ,5) ( 5 9 (min. 20,0) X 25 11 ( 5,5) (min. 78,0) 25 28,75 ( 5,5) Schraubenempfehlung: screw recommendation: EJOT PT K 25x10 WN1451 EJOT DELTA PT 25x10 WN5451 0,4 A D E 68,5 2x 47,25 0 47,25 55 2 55 1 55 B 68,5 ( 6,4) 0 3 (min. 100,0) D 4x 4x M6 Y (min. 38,0) 11 11 24,444 5 830 120, 62 0,2 0,6 A D E 4 10 62,5 0,2 28,75 25 0,4 A B C M 7x + 1 - 0,09 0,06 4x 0,05 M-M 2,8 +- 0,1 0 7x 0,4 M-M 4x 29,2 28,75 Y X 0 47,25 36,19 40 9,53 13,34 0 17,15 13,33 40 47,25 28,75 29,2 - PCB: Durchmesser des metallisierten Loches - PCB: diameter of plated hole Figure 2 Datasheet 14 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 15 Revision 1.00 2022-02-01 FF900R17ME7_B11 EconoDUAL™3 module Revision history Revision history Document revision Date of release Description of changes 0.10 2020-11-12 Target datasheet 0.20 2021-01-14 Target datasheet 1.00 2022-02-01 Final datasheet Datasheet 16 Revision 1.00 2022-02-01 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-02-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAJ664-003 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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