技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
EasyPIM™模块采用第四代沟槽栅/场终止IGBT4和第四代发射极控制二极管带有温度检测NTC
EasyPIM™modulewithTrench/FieldstopIGBT4andEmitterControlled4diodeandNTC
初步数据/PreliminaryData
VCES = 1200V
IC nom = 10A / ICRM = 20A
典型应用
• 辅助逆变器
• 空调
• 电机传动
TypicalApplications
• AuxiliaryInverters
• AirConditioning
• MotorDrives
电气特性
• 低开关损耗
• 沟槽栅IGBT4
• VCEsat带正温度系数
• 低VCEsat
ElectricalFeatures
• LowSwitchingLosses
• TrenchIGBT4
• VCEsatwithpositiveTemperatureCoefficient
• LowVCEsat
机械特性
• 低热阻的三氧化二铝（Al2O3衬底
• 紧凑型设计
• 焊接技术
• 集成的安装夹使安装坚固
MechanicalFeatures
• Al2O3SubstratewithLowThermalResistance
• Compactdesign
• SolderContactTechnology
• Rugged mounting due to integrated mounting
clamps
ModuleLabelCode
BarcodeCode128
DMX-Code
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
ContentoftheCode
Digit
ModuleSerialNumber
ModuleMaterialNumber
ProductionOrderNumber
Datecode(ProductionYear)
Datecode(ProductionWeek)
1-5
6-11
12-19
20-21
22-23
ULapproved(E83335)
1
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
IGBT,逆变器/IGBT,Inverter
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
10
20
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
20
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175
Ptot
105
W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
V
1200
VCE sat
A
A
typ.
max.
1,85
2,15
2,25
2,25
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
0,09
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
0,60
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,024
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,045
0,045
0,045
µs
µs
µs
tr
0,044
0,061
0,063
µs
µs
µs
td off
0,18
0,245
0,275
µs
µs
µs
tf
0,165
0,215
0,225
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGon = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGon = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGoff = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGoff = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 10 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, di/dt = 500 A/µs (Tvj = 150°C) Tvj = 125°C
RGon = 47 Ω
Tvj = 150°C
Eon
0,90
1,35
1,55
mJ
mJ
mJ
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC = 10 A, VCE = 600 V, LS = 50 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3500 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 47 Ω
Tvj = 150°C
Eoff
0,55
0,80
0,87
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
ISC
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
1,25
1,40 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,15
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
2
tP ≤ 10 µs, Tvj = 150°C
35
150
A
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
二极管,逆变器/Diode,Inverter
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM
1200
V
IF
10
A
IFRM
20
A
I²t
16,0
14,0
特征值/CharacteristicValues
min.
typ.
max.
1,75
1,75
1,75
2,25
A²s
A²s
正向电压
Forwardvoltage
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
12,0
10,0
8,00
A
A
A
恢复电荷
Recoveredcharge
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,90
1,70
1,90
µC
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,24
0,52
0,59
mJ
mJ
mJ
V
V
V
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,75
1,90 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,30
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
°C
二极管,整流器/Diode,Rectifier
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM
1600
V
最大正向均方根电流(每芯片)
MaximumRMSforwardcurrentperchip
TC = 80°C
IFRMSM
30
A
最大整流器输出均方根电流
MaximumRMScurrentatrectifieroutput
TC = 80°C
IRMSM
30
A
正向浪涌电流
Surgeforwardcurrent
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
IFSM
300
245
A
A
I2t-值
I²t-value
tp = 10 ms, Tvj = 25°C
tp = 10 ms, Tvj = 150°C
I²t
450
300
A²s
A²s
特征值/CharacteristicValues
min.
typ.
max.
VF
0,80
V
IR
1,00
mA
每个二极管/perdiode
RthJC
1,20
1,35 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,15
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
正向电压
Forwardvoltage
Tvj = 150°C, IF = 10 A
反向电流
Reversecurrent
Tvj = 150°C, VR = 1600 V
结－外壳热阻
Thermalresistance,junctiontocase
3
150
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
IGBT,制动-斩波器/IGBT,Brake-Chopper
最大额定值/MaximumRatedValues
集电极－发射极电压
Collector-emittervoltage
Tvj = 25°C
VCES
连续集电极直流电流
ContinuousDCcollectorcurrent
TC = 100°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
10
20
集电极重复峰值电流
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
20
A
总功率损耗
Totalpowerdissipation
TC = 25°C, Tvj max = 175
Ptot
105
W
栅极－发射极峰值电压
Gate-emitterpeakvoltage
VGES
+/-20
V
特征值/CharacteristicValues
集电极－发射极饱和电压
Collector-emittersaturationvoltage
min.
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
IC = 10 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
栅极阈值电压
Gatethresholdvoltage
IC = 0,30 mA, VCE = VGE, Tvj = 25°C
栅极电荷
Gatecharge
V
1200
VCE sat
A
A
typ.
max.
1,85
2,15
2,25
2,25
V
V
V
VGEth
5,2
5,8
6,4
V
VGE = -15 V ... +15 V
QG
0,09
µC
内部栅极电阻
Internalgateresistor
Tvj = 25°C
RGint
0,0
Ω
输入电容
Inputcapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cies
0,60
nF
反向传输电容
Reversetransfercapacitance
f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V
Cres
0,024
nF
集电极-发射极截止电流
Collector-emittercut-offcurrent
VCE = 1200 V, VGE = 0 V, Tvj = 25°C
ICES
1,0
mA
栅极-发射极漏电流
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V, Tvj = 25°C
IGES
400
nA
td on
0,045
0,045
0,045
µs
µs
µs
tr
0,044
0,061
0,063
µs
µs
µs
td off
0,18
0,245
0,275
µs
µs
µs
tf
0,165
0,215
0,225
µs
µs
µs
开通延迟时间(电感负载)
Turn-ondelaytime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGon = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
上升时间(电感负载)
Risetime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGon = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
关断延迟时间(电感负载)
Turn-offdelaytime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGoff = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
下降时间(电感负载)
Falltime,inductiveload
IC = 10 A, VCE = 600 V
VGE = ±15 V
RGoff = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
开通损耗能量(每脉冲)
Turn-onenergylossperpulse
IC = 10 A, VCE = 600 V, LS = 50 nH
VGE = ±15 V
RGon = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon
0,90
1,35
1,55
mJ
mJ
mJ
关断损耗能量(每脉冲）
Turn-offenergylossperpulse
IC = 10 A, VCE = 600 V, LS = 50 nH
VGE = ±15 V
RGoff = 47 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eoff
0,55
0,80
0,87
mJ
mJ
mJ
短路数据
SCdata
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
tP ≤ 10 µs, Tvj = 150°C
ISC
结－外壳热阻
Thermalresistance,junctiontocase
每个IGBT/perIGBT
RthJC
1,25
1,40 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个IGBT/perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,15
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
4
35
150
A
°C
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
二极管，制动-斩波器/Diode,Brake-Chopper
最大额定值/MaximumRatedValues
反向重复峰值电压
Repetitivepeakreversevoltage
Tvj = 25°C
连续正向直流电流
ContinuousDCforwardcurrent
正向重复峰值电流
Repetitivepeakforwardcurrent
tP = 1 ms
I2t-值
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
VRRM
1200
V
IF
10
A
IFRM
20
A
I²t
16,0
14,0
特征值/CharacteristicValues
min.
typ.
max.
1,75
1,75
1,75
2,25
A²s
A²s
正向电压
Forwardvoltage
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
IF = 10 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VF
反向恢复峰值电流
Peakreverserecoverycurrent
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
12,0
10,0
8,00
A
A
A
恢复电荷
Recoveredcharge
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
0,90
1,70
1,90
µC
µC
µC
反向恢复损耗（每脉冲）
Reverserecoveryenergy
IF = 10 A, - diF/dt = 500 A/µs (Tvj=150°C)
VR = 600 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
0,24
0,52
0,59
mJ
mJ
mJ
结－外壳热阻
Thermalresistance,junctiontocase
每个二极管/perdiode
RthJC
1,75
1,90 K/W
外壳－散热器热阻
Thermalresistance,casetoheatsink
每个二极管/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
1,30
K/W
在开关状态下温度
Temperatureunderswitchingconditions
Tvj op
-40
150
min.
typ.
max.
R25
5,00
kΩ
∆R/R
-5
5
%
P25
20,0
mW
V
V
V
°C
负温度系数热敏电阻/NTC-Thermistor
特征值/CharacteristicValues
额定电阻值
Ratedresistance
TC = 25°C
R100偏差
DeviationofR100
TC = 100°C, R100 = 493 Ω
耗散功率
Powerdissipation
TC = 25°C
B-值
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-值
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-值
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
根据应用手册标定
Specificationaccordingtothevalidapplicationnote.
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
模块/Module
绝缘测试电压
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min
内部绝缘
Internalisolation
基本绝缘(class1,IEC61140)
basicinsulation(class1,IEC61140)
Al2O3
爬电距离
Creepagedistance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
11,5
6,3
mm
电气间隙
Clearance
端子-散热片/terminaltoheatsink
端子-端子/terminaltoterminal
10,0
5,0
mm
相对电痕指数
Comperativetrackingindex
CTI
> 200
VISOL
kV
2,5
min.
typ.
max.
LsCE
30
nH
RCC'+EE'
RAA'+CC'
8,00
6,00
mΩ
逆变器,制动-斩波器/inverter,brake-chopper
整流器/rectifier
Tvj max
175
150
°C
°C
在开关状态下温度
Temperatureunderswitchingconditions
逆变器,制动-斩波器/inverter,brake-chopper
整流器/rectifier
Tvj op
-40
-40
150
150
°C
°C
储存温度
Storagetemperature
Tstg
-40
125
°C
Anpresskraft für mech. Bef. pro Feder
mountig force per clamp
F
20
-
50
N
重量
Weight
G
24
g
杂散电感,模块
Strayinductancemodule
模块引线电阻,端子-芯片
Moduleleadresistance,terminals-chip
TC=25°C,每个开关/perswitch
最大结温
Maximumjunctiontemperature
Der Strom im Dauerbetrieb ist auf 30A effektiv pro Anschlusspin begrenzt.
The current under continuous operation is limited to 30A rms per connector pin.
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
6
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
输出特性IGBT,逆变器（典型)
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
20
20
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
16
16
14
14
12
12
10
8
6
6
4
4
2
2
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
传输特性IGBT,逆变器(典型)
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
16
18
20
5,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
18
14
3,5
12
3,0
E [mJ]
4,0
10
2,5
8
2,0
6
1,5
4
1,0
2
0,5
5
6
7
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
4,5
16
0
0,0
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=47Ω,RGoff=47Ω,VCE=600V
20
IC [A]
10
8
0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
18
IC [A]
IC [A]
18
8
9
VGE [V]
10
11
12
0,0
13
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
7
0
2
4
6
8
10 12
IC [A]
14
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
开关损耗IGBT,逆变器（典型)
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=10A,VCE=600V
瞬态热阻抗IGBT,逆变器
transientthermalimpedanceIGBT,Inverter
ZthJH=f(t)
6,0
10
Eon, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 125°C
Eoff, Tvj = 150°C
5,5
5,0
ZthJH : IGBT
4,5
4,0
ZthJH [K/W]
E [mJ]
3,5
3,0
2,5
1
2,0
1,5
1,0
i:
1
2
3
4
ri[K/W]: 0,209 0,443 0,982 0,766
τi[s]:
0,0005 0,005 0,05 0,2
0,5
0,0
0
50
0,1
0,001
100 150 200 250 300 350 400 450 500
RG [Ω]
反偏安全工作区IGBT,逆变器（RBSOA）
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=47Ω,Tvj=150°C
1
10
20
IC, Modul
IC, Chip
20
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
18
18
16
16
14
14
12
12
IF [A]
IC [A]
0,1
t [s]
正向偏压特性二极管,逆变器（典型)
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
22
10
10
8
8
6
6
4
4
2
2
0
0,01
0
200
400
600
800
VCE [V]
1000
1200
0
1400
0,0
0,5
1,0
1,5
VF [V]
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
8
2,0
2,5
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=47Ω,VCE=600V
开关损耗二极管,逆变器（典型)
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=10A,VCE=600V
1,0
0,8
Erec, Tvj = 125°C
Erec, Tvj = 150°C
Erec, Tvj = 125°C
Erec, Tvj = 150°C
0,7
0,8
0,6
0,5
E [mJ]
E [mJ]
0,6
0,4
0,4
0,3
0,2
0,2
0,1
0,0
0
2
4
6
8
10 12
IF [A]
14
16
18
0,0
20
瞬态热阻抗二极管,逆变器
transientthermalimpedanceDiode,Inverter
ZthJH=f(t)
0
40 80 120 160 200 240 280 320 360 400 440 480
RG [Ω]
正向偏压特性二极管,整流器（典型)
forwardcharacteristicofDiode,Rectifier(typical)
IF=f(VF)
10
20
ZthJH : Diode
Tvj = 25°C
Tvj = 150°C
18
16
14
IF [A]
ZthJH [K/W]
12
1
10
8
6
4
i:
1
2
3
4
ri[K/W]: 0,404 0,664 1,174 0,808
τi[s]:
0,0005 0,005 0,05 0,2
0,1
0,001
0,01
0,1
t [s]
1
2
0
10
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
9
0,0
0,2
0,4
0,6
0,8
VF [V]
1,0
1,2
1,4
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
输出特性IGBT,制动-斩波器（典型)
outputcharacteristicIGBT,Brake-Chopper(typical)
IC=f(VCE)
VGE=15V
正向偏压特性二极管，制动-斩波器（典型)
forwardcharacteristicofDiode,Brake-Chopper(typical)
IF=f(VF)
20
20
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
16
16
14
14
12
12
10
10
8
8
6
6
4
4
2
2
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
0
3,5
负温度系数热敏电阻温度特性
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
100000
Rtyp
R[Ω]
10000
1000
100
0
20
40
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
18
IF [A]
IC [A]
18
60
80
100
TC [°C]
120
140
160
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
10
0,0
0,5
1,0
1,5
VF [V]
2,0
2,5
3,0
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
接线图/circuit_diagram_headline
J
封装尺寸/packageoutlines
Infineon
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
11
技术信息/TechnicalInformation
IGBT-模块
IGBT-modules
FP10R12W1T4
初步数据
PreliminaryData
使用条件和条款
使用条件和条款
产品规格书中的数据是专门为技术人员提供的，您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合
产品规格书中所描述的产品特性是被保证的，任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外，产品和产品的特性没有任何的保证
请注意安装及应用指南中的信息。
如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话，请联系我们负责你的销售部门（详情查询
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请注意，对这类应用我们强烈建议
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如果有必要，请根据实际需要将类似的说明给你的客户
保留产品规格书的修改权
Terms&Conditionsofusage
Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill
havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch
application.
Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted
exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits
characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered.
Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof
ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically
interestedwemayprovideapplicationnotes.
Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe
salesoffice,whichisresponsibleforyou.
ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please
note,thatforanysuchapplicationsweurgentlyrecommend
-toperformjointRiskandQualityAssessments;
-theconclusionofQualityAgreements;
-toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon
therealizationofanysuchmeasures.
Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers.
Changesofthisproductdatasheetarereserved.
preparedby:DK
dateofpublication:2013-10-03
approvedby:MB
revision:2.1
12
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