FP10R12W1T7B11BOMA1

FP10R12W1T7_B11 EasyPIM™ module Preliminary datasheet EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Features • Electrical features - TRENCHSTOPTM IGBT7 - Overload operation up to 175°C - Low VCEsat • Mechanical features - High power density - PressFIT contact technology - 2.5 kV AC 1 min insulation - Al2O3 substrate with low thermal resistance - Compact design Potential applications • Auxiliary inverters • Air conditioning • Motor drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Datasheet 2 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 2.5 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 6 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 8 mΩ Storage temperature Tstg -40 125 °C Mounting force per clamp F 20 50 N Weight G Note: 2 Table 3 g Values Unit Tvj = 25 °C 1200 V TH = 100 °C 10 A 20 A ±20 V The current under continuous operation is limited to 25A rms per connector pin. IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet 24 3 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 10 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 6.45 V IC = 0.22 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.157 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 1.89 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.0066 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 10 A, VCE = 600 V, VGE = ±15 V, RGon = 8.2 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Datasheet tr tdoff tf Eon Eoff ISC Tvj = 25 °C Tvj = 25 °C 0.023 Tvj = 125 °C 0.025 Tvj = 175 °C 0.026 Tvj = 25 °C 0.014 Tvj = 125 °C 0.017 Tvj = 175 °C 0.019 Tvj = 25 °C 0.124 Tvj = 125 °C 0.157 Tvj = 175 °C 0.176 Tvj = 25 °C 0.227 Tvj = 125 °C 0.347 Tvj = 175 °C 0.422 Tvj = 25 °C 0.73 Tvj = 125 °C 0.94 Tvj = 175 °C 1.13 IC = 10 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 8.2 Ω, dv/dt = 2700 V/µs (Tvj = 175 °C) Tvj = 25 °C 0.623 Tvj = 125 °C 0.97 Tvj = 175 °C 1.17 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 32 tP ≤ 7 µs, Tvj = 175 °C 30 IC = 10 A, VCE = 600 V, VGE = ±15 V, RGon = 8.2 Ω IC = 10 A, VCE = 600 V, VGE = ±15 V, RGoff = 8.2 Ω IC = 10 A, VCE = 600 V, VGE = ±15 V, RGoff = 8.2 Ω IC = 10 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8.2 Ω, di/dt = 550 A/µs (Tvj = 175 °C) 4 0.0045 mA 100 nA µs µs µs µs mJ mJ A 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 3 per IGBT Max. 2.05 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 10 A 20 A Tvj = 125 °C 27.5 A²s Tvj = 175 °C 24 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy Datasheet Typ. Unit VF IRM Qr Erec Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 10.5 Tvj = 125 °C 15.3 Tvj = 175 °C 17.5 IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.97 Tvj = 125 °C 1.7 Tvj = 175 °C 2.2 IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.24 Tvj = 125 °C 0.51 Tvj = 175 °C 0.72 IF = 10 A, VGE = 0 V 5 V A µC mJ 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 4 per diode Typ. Unit Max. 2.45 -40 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 25 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 25 A IFSM tP = 10 ms Tvj = 25 °C 300 A Tvj = 150 °C 245 Tvj = 25 °C 450 Tvj = 150 °C 300 Surge forward current I2t - value Table 8 I2t tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 10 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj, op Datasheet A²s Tvj = 150 °C per diode -40 6 Typ. Unit Max. 0.80 V 1 mA 1.54 K/W 150 °C 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 5 IGBT, Brake-Chopper 5 IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TH = 100 °C 10 A 20 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 10 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 6.45 V IC = 0.22 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.157 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 1.89 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.0066 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 10 A, VCE = 600 V, VGE = ±15 V, RGon = 8.2 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Datasheet tr tdoff tf IC = 10 A, VCE = 600 V, VGE = ±15 V, RGon = 8.2 Ω IC = 10 A, VCE = 600 V, VGE = ±15 V, RGoff = 8.2 Ω IC = 10 A, VCE = 600 V, VGE = ±15 V, RGoff = 8.2 Ω 7 Tvj = 25 °C Tvj = 25 °C 0.023 Tvj = 125 °C 0.025 Tvj = 175 °C 0.026 Tvj = 25 °C 0.014 Tvj = 125 °C 0.017 Tvj = 175 °C 0.019 Tvj = 25 °C 0.124 Tvj = 125 °C 0.157 Tvj = 175 °C 0.176 Tvj = 25 °C 0.227 Tvj = 125 °C 0.347 Tvj = 175 °C 0.422 0.0045 mA 100 nA µs µs µs µs 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 6 Diode, Brake-Chopper Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 6 Table 11 Tvj = 25 °C 0.73 Tvj = 125 °C 0.94 Tvj = 175 °C 1.13 IC = 10 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 8.2 Ω, dv/dt = 2700 V/µs (Tvj = 175 °C) Tvj = 25 °C 0.623 Tvj = 125 °C 0.97 Tvj = 175 °C 1.17 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 32 tP ≤ 7 µs, Tvj = 175 °C 30 per IGBT mJ mJ A 2.05 -40 K/W 175 °C Diode, Brake-Chopper Maximum rated values Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet IC = 10 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 8.2 Ω, di/dt = 550 A/µs (Tvj = 175 °C) Max. Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Parameter I2t - value Typ. Unit IFRM I2t Values Unit 1200 V 10 A 20 A Tvj = 125 °C 27.5 A²s Tvj = 175 °C 24 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms 8 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 7 NTC-Thermistor Table 12 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 7 IF = 10 A, VGE = 0 V IF = 10 A, VR = 600 V, -diF/dt = 550 A/µs (Tvj = 175 °C) IF = 10 A, VR = 600 V, -diF/dt = 550 A/µs (Tvj = 175 °C) IF = 10 A, VR = 600 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 10.5 Tvj = 125 °C 15.3 Tvj = 175 °C 17.5 Tvj = 25 °C 0.97 Tvj = 125 °C 1.7 Tvj = 175 °C 2.2 Tvj = 25 °C 0.24 Tvj = 125 °C 0.51 Tvj = 175 °C 0.72 per diode A µC mJ 2.45 -40 V K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance Max. Power dissipation ΔR/R TNTC = 25 °C B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet R25 Typ. Unit P25 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW Specification according to the valid application note. 9 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 20 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 600 V, VGE = ± 15 V 20 5.0 18 4.5 16 4.0 14 3.5 12 3.0 10 2.5 8 2.0 6 1.5 4 1.0 2 0.5 0 0.0 5 Datasheet 0.5 6 7 8 9 10 11 12 13 14 0 10 2 4 6 8 10 12 14 16 18 20 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 10 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT, Inverter t = f(IC) RGoff = 8.2 Ω, RGon = 8.2 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 4.0 10 3.5 1 3.0 2.5 0.1 2.0 0.01 1.5 1.0 0.001 0.5 0.0 0.0001 0 10 20 30 40 50 60 70 80 90 0 switching times (typical), IGBT, Inverter t = f(RG) IC = 10 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 2 4 6 8 10 12 14 16 18 20 dv/dt (typical), IGBT, Inverter dv/dt = f(RG) IC = 10 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 10 10 9 8 1 7 6 0.1 5 4 3 0.01 2 1 0.001 0 0 Datasheet 10 20 30 40 50 60 70 80 90 0 11 10 20 30 40 50 60 70 80 90 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams transient thermal impedance , IGBT, Inverter Zth = f(t) reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 8.2 Ω, VGE = ±15 V, Tvj = 175 °C 10 24 22 20 18 16 14 12 1 10 8 6 4 2 0 0.1 0.001 0.01 0.1 1 0 10 capacity characteristic (typical), IGBT, Inverter C = f(VCE) Tvj = 25 °C, VGE = 0 V, f = 100 kHz 200 400 600 800 1000 1200 1400 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 10 A, Tvj = 25 °C 10 15 12 9 1 6 3 0.1 0 -3 -6 0.01 -9 -12 0.001 0 Datasheet 10 20 30 40 50 60 70 80 90 -15 0.00 100 12 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 600 V, RGon = 8.2 Ω 20 1.0 18 0.9 16 0.8 14 0.7 12 0.6 10 0.5 8 0.4 6 0.3 4 0.2 2 0.1 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 10 A 2 4 6 8 10 12 14 16 18 20 transient thermal impedance , Diode, Inverter Zth = f(t) 1.0 10 0.9 0.8 0.7 0.6 0.5 1 0.4 0.3 0.2 0.1 0.0 0 Datasheet 10 20 30 40 50 60 70 80 0.1 0.001 90 13 0.01 0.1 1 10 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Rectifier IF = f(VF) transient thermal impedance , Diode, Rectifier Zth = f(t) 20 10 18 16 14 1 12 10 8 0.1 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 4 2 2 1 10 0 0.0 Datasheet 0.1 forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 20 0 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 14 0.5 1.0 1.5 2.0 2.5 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 15 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 9 Circuit diagram 9 Circuit diagram J Figure 2 Datasheet 16 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 10 Package outlines 10 Package outlines Infineon Figure 3 Datasheet 17 0.10 2021-03-05 FP10R12W1T7_B11 EasyPIM™ module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 18 0.10 2021-03-05 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-05 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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