FP150R12N3T7PB11BPSA1

FP150R12N3T7P_B11 EconoPIM™3 module EconoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC / TIM Features • Electrical features - VCES = 1200 V - IC nom = 150 A / ICRM = 300 A - TRENCHSTOPTM IGBT7 - Overload operation up to 175°C - Low VCE,sat • Mechanical features - Integrated NTC temperature sensor - PressFIT contact technology - Copper base plate - Al2O3 substrate with low thermal resistance - Pre-applied thermal interface material Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Datasheet 2 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 25 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 1.1 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 1.6 mΩ Storage temperature Maximum baseplate operation temperature Tstg TBPmax Mounting torque for modul mounting M Weight G Note: 2 Table 3 -40 - Mounting according to M5, Screw valid application note °C 125 °C 6 Nm 300 g Values Unit Tvj = 25 °C 1200 V TH = 50 °C 150 A 300 A The current under continuous operation is limited to 50 A rms per connector pin. Storage and shipment of modules with TIM => see AN2012-07 IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Datasheet 3 125 3 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 2 IGBT, Inverter Table 3 Maximum rated values (continued) Parameter Symbol Note or test condition Gate-emitter peak voltage Table 4 VGES Values Unit ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 150 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.55 1.80 V Tvj = 125 °C 1.69 Tvj = 175 °C 1.77 6.45 V IC = 3.5 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 2.5 µC 1 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 30.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.105 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 150 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse Datasheet tr tdoff tf Eon Eoff Tvj = 25 °C Tvj = 25 °C 0.172 Tvj = 125 °C 0.183 Tvj = 175 °C 0.189 Tvj = 25 °C 0.072 Tvj = 125 °C 0.077 Tvj = 175 °C 0.080 Tvj = 25 °C 0.331 Tvj = 125 °C 0.414 Tvj = 175 °C 0.433 Tvj = 25 °C 0.103 Tvj = 125 °C 0.198 Tvj = 175 °C 0.262 IC = 150 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 3.3 Ω, di/dt = 1700 A/µs (Tvj = 175 °C) Tvj = 25 °C 16.6 Tvj = 125 °C 24.9 Tvj = 175 °C 29.6 IC = 150 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 3.3 Ω, dv/dt = 3200 V/µs (Tvj = 175 °C) Tvj = 25 °C 10.4 Tvj = 125 °C 15.9 Tvj = 175 °C 19.9 IC = 150 A, VCE = 600 V, VGE = ±15 V, RGon = 3.3 Ω IC = 150 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω IC = 150 A, VCE = 600 V, VGE = ±15 V, RGoff = 3.3 Ω 4 0.012 mA 100 nA µs µs µs µs mJ mJ Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. SC data ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 3 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 520 tP ≤ 7 µs, Tvj = 175 °C 490 per IGBT, Valid with IFX pre-applied Thermal Interface Material -40 Max. A 0.374 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 150 A 300 A Tvj = 125 °C 2700 A²s Tvj = 175 °C 2250 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Datasheet Typ. Unit VF IRM IF = 150 A, VGE = 0 V IF = 150 A, VR = 600 V, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) 5 Unit Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 65.3 Tvj = 125 °C 91.8 Tvj = 175 °C 107 V A Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 4 IF = 150 A, VR = 600 V, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) IF = 150 A, VR = 600 V, VGE = -15 V, -diF/dt = 1700 A/µs (Tvj = 175 °C) Typ. Tvj = 25 °C 10.3 Tvj = 125 °C 21.7 Tvj = 175 °C 28.6 Tvj = 25 °C 3.27 Tvj = 125 °C 7.32 Tvj = 175 °C 9.88 per diode, Valid with IFX pre-applied Thermal Interface Material -40 Unit Max. µC mJ 0.581 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 105 °C 150 A Maximum RMS current at rectifier output IRMSM TH = 105 °C 150 A IFSM tP = 10 ms Tvj = 25 °C 1600 A Tvj = 150 °C 1400 Tvj = 25 °C 12800 Tvj = 150 °C 9800 Surge forward current I2t - value Table 8 I2t tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 150 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Thermal resistance, junction to heatsink Datasheet A²s RthJH Tvj = 150 °C per diode, Valid with IFX pre-applied Thermal Interface Material 6 Typ. Unit Max. 0.97 V 1 mA 0.435 K/W Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 5 IGBT, Brake-Chopper Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 5 Tvj, op Typ. -40 Unit Max. 150 °C IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TH = 75 °C 100 A 200 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 100 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 2.5 mA, VCE = VGE, Tvj = 25 °C 5.15 5.80 VGE = ±15 V, VCE = 600 V 1.8 µC Internal gate resistor RGint Tvj = 25 °C 1.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 21.7 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.076 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 4.3 Ω Rise time (inductive load) Datasheet tr IC = 100 A, VCE = 600 V, VGE = ±15 V, RGon = 4.3 Ω 7 Tvj = 25 °C Tvj = 25 °C 0.169 Tvj = 125 °C 0.180 Tvj = 175 °C 0.187 Tvj = 25 °C 0.063 Tvj = 125 °C 0.067 Tvj = 175 °C 0.070 0.01 mA 100 nA µs µs Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 6 Diode, Brake-Chopper Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-off delay time (inductive load) tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 6 Table 11 IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 4.3 Ω, di/dt = 1100 A/µs (Tvj = 175 °C) 0.310 Tvj = 125 °C 0.390 Tvj = 175 °C 0.410 Tvj = 25 °C 0.110 Tvj = 125 °C 0.190 Tvj = 175 °C 0.250 Tvj = 25 °C 7.12 Tvj = 125 °C 11.7 Tvj = 175 °C 14.5 IC = 100 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 4.3 Ω, dv/dt = 2800 V/µs (Tvj = 175 °C) Tvj = 25 °C 6.93 Tvj = 125 °C 10.6 Tvj = 175 °C 13.3 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 370 tP ≤ 7 µs, Tvj = 175 °C 350 per IGBT, Valid with IFX pre-applied Thermal Interface Material -40 µs µs mJ mJ A 0.474 K/W 175 °C Diode, Brake-Chopper Maximum rated values Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 4.3 Ω Tvj = 25 °C Max. Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Parameter I2t - value IC = 100 A, VCE = 600 V, VGE = ±15 V, RGoff = 4.3 Ω Typ. Unit IFRM I2t Values Unit 1200 V 50 A 100 A Tvj = 125 °C 220 A²s Tvj = 175 °C 200 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms 8 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 7 NTC-Thermistor Table 12 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 7 Unit Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 IF = 50 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 37.3 Tvj = 125 °C 44.3 Tvj = 175 °C 49.6 IF = 50 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 3.86 Tvj = 125 °C 7.05 Tvj = 175 °C 10.1 IF = 50 A, VR = 600 V, VGE = -15 V, -diF/dt = 550 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.13 Tvj = 125 °C 2.34 Tvj = 175 °C 3.23 IF = 50 A, VGE = 0 V per diode, Valid with IFX pre-applied Thermal Interface Material -40 V A µC mJ 1.07 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 9 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams 8 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.3 Ω, VGE = 15 V, Tvj = 175 °C output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V 350 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0 200 400 600 800 1000 1200 1400 0.0 output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 1.0 1.5 2.0 2.5 3.0 3.5 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 300 300 250 250 200 200 150 150 100 100 50 50 0 0 0.0 Datasheet 0.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5 10 6 7 8 9 10 11 12 13 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = -15 / 15 V switching losses (typical), IGBT, Inverter E = f(RG) IC = 150 A, VCE = 600 V, VGE = -15 / 15 V 120 160 150 110 140 100 130 90 120 110 80 100 70 90 60 80 70 50 60 40 50 30 40 30 20 20 10 10 0 0 0 50 100 150 200 250 300 0 5 10 15 20 25 30 35 switching times (typical), IGBT, Inverter switching times (typical), IGBT, Inverter t = f(IC) t = f(RG) RGoff = 3.3 Ω, RGon = 3.3 Ω, VCE = 600 V, VGE = -15 / 15 V, Tvj = IC = 150 A, VCE = 600 V, VGE = -15 / 15 V, Tvj = 175 °C 175 °C 10 10 1 1 0.1 0.1 0.01 0.01 0 Datasheet 50 100 150 200 250 300 0 11 5 10 15 20 25 30 35 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams transient thermal impedance , IGBT, Inverter Zth = f(t) capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 1 1000 100 10 0.1 1 0.1 0.01 0.01 0.001 0.01 0.1 1 0 10 Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 150 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 10 20 30 40 50 60 70 80 90 100 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 150 A, Tvj = 25 °C 7 15 6 10 5 5 4 0 3 -5 2 -10 1 0 -15 0 Datasheet 5 10 15 20 25 30 35 0.0 12 0.5 1.0 1.5 2.0 2.5 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 3.3 Ω, VCE = 600 V 300 14 12 250 10 200 8 150 6 100 4 50 2 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 150 A 50 100 150 200 250 300 transient thermal impedance , Diode, Inverter Zth = f(t) 1 14 12 10 8 0.1 6 4 2 0 0 Datasheet 5 10 15 20 25 30 0.01 0.001 35 13 0.01 0.1 1 10 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams transient thermal impedance , Diode, Rectifier Zth = f(t) forward characteristic (typical), Diode, Rectifier IF = f(VF) 1 300 250 200 150 0.1 100 50 0 0.01 0.001 0.01 0.1 1 0.0 10 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 0.2 0.4 0.6 0.8 1.0 1.2 1.4 forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 100 200 90 175 80 150 70 125 60 100 50 40 75 30 50 20 25 10 0 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 0.0 14 0.5 1.0 1.5 2.0 2.5 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 15 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 9 Circuit diagram 9 Circuit diagram Figure 2 Datasheet 16 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module 10 Package outlines 10 Package outlines Figure 3 Datasheet 17 Revision 1.00 2021-09-22 FP150R12N3T7P_B11 EconoPIM™3 module Revision history Revision history Document revision Date of release Description of changes 1.00 2021-09-22 Initial version Datasheet 18 Revision 1.00 2021-09-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-09-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB922-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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