FP15R12W1T7_B3
EasyPIM™ module
Preliminary datasheet
EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and NTC
Features
• Electrical features
- TRENCHSTOPTM IGBT7
- Low VCEsat
- Overload operation up to 175°C
• Mechanical features
- 2.5 kV AC 1 min insulation
- High power density
- Solder contact technology
- Compact design
- Al2O3 substrate with low thermal resistance
Potential applications
• Air conditioning
• Auxiliary inverters
• Motor drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
0.10
2021-03-18
FP15R12W1T7_B3
EasyPIM™ module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
6
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
8
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
9
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Datasheet
2
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FP15R12W1T7_B3
EasyPIM™ module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
Internal Isolation
RMS, f = 50 Hz, t = 1 min
Values
Unit
2.5
kV
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
11.5
mm
Creepage distance
dCreep
terminal to terminal
6.3
mm
Clearance
dClear
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to terminal
5.0
mm
Comparative tracking index
CTI
RTI Elec.
RTI
Table 2
> 200
housing
140
°C
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Stray inductance module
LsCE
Typ.
Max.
30
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TH=25°C, per switch
6
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TH=25°C, per switch
8
mΩ
Storage temperature
Tstg
-40
125
°C
Mounting force per clamp
F
20
50
N
Weight
G
Note:
2
Table 3
g
Values
Unit
Tvj = 25 °C
1200
V
TH = 110 °C
15
A
30
A
±20
V
The current under continuous operation is limited to 30A rms per connector pin.
IGBT, Inverter
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
24
3
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FP15R12W1T7_B3
EasyPIM™ module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 15 A, VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.60
TBD
V
Tvj = 125 °C
1.74
Tvj = 175 °C
1.82
6.45
V
IC = 0.553 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
0.234
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
2.82
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.0099
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 15 A, VCE = 600 V,
VGE = ±15 V, RGon = 7.5 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
Datasheet
tr
tdoff
tf
Eon
Eoff
ISC
Tvj = 25 °C
Tvj = 25 °C
0.023
Tvj = 125 °C
0.025
Tvj = 175 °C
0.026
Tvj = 25 °C
0.012
Tvj = 125 °C
0.015
Tvj = 175 °C
0.016
Tvj = 25 °C
0.144
Tvj = 125 °C
0.190
Tvj = 175 °C
0.256
Tvj = 25 °C
0.199
Tvj = 125 °C
0.301
Tvj = 175 °C
0.329
Tvj = 25 °C
0.87
Tvj = 125 °C
1.21
Tvj = 175 °C
1.45
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 7.5 Ω, dv/dt =
4000 V/µs (Tvj = 175 °C)
Tvj = 25 °C
0.922
Tvj = 125 °C
1.44
Tvj = 175 °C
1.8
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
48
tP ≤ 7 µs,
Tvj = 175 °C
45
IC = 15 A, VCE = 600 V,
VGE = ±15 V, RGon = 7.5 Ω
IC = 15 A, VCE = 600 V,
VGE = ±15 V, RGoff = 7.5 Ω
IC = 15 A, VCE = 600 V,
VGE = ±15 V, RGoff = 7.5 Ω
IC = 15 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 7.5 Ω, di/dt = 750
A/µs (Tvj = 175 °C)
4
0.003
mA
100
nA
µs
µs
µs
µs
mJ
mJ
A
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FP15R12W1T7_B3
EasyPIM™ module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
3
per IGBT
Max.
1.80
-40
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
I2t - value
Table 6
IFRM
I2t
Values
Unit
1200
V
10
A
20
A
Tvj = 125 °C
27.5
A²s
Tvj = 175 °C
24
Tvj = 25 °C
tP = 1 ms
VR = 0 V, tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Recovered charge
Reverse recovery energy
Datasheet
Typ.
Unit
VF
IRM
Qr
Erec
Unit
Typ.
Max.
Tvj = 25 °C
1.72
TBD
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
15.5
Tvj = 125 °C
19.2
Tvj = 175 °C
22.5
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
0.82
Tvj = 125 °C
1.46
Tvj = 175 °C
2.05
IF = 10 A, VR = 600 V,
VGE = -15 V, -diF/dt = 700
A/µs (Tvj = 175 °C)
Tvj = 25 °C
0.31
Tvj = 125 °C
0.57
Tvj = 175 °C
0.82
IF = 10 A, VGE = 0 V
5
V
A
µC
mJ
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FP15R12W1T7_B3
EasyPIM™ module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
4
per diode
Typ.
Unit
Max.
2.51
-40
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM
TH = 100 °C
25
A
Maximum RMS current at
rectifier output
IRMSM
TH = 100 °C
25
A
IFSM
tP = 10 ms
Tvj = 25 °C
300
A
Tvj = 150 °C
245
Tvj = 25 °C
450
Tvj = 150 °C
300
Surge forward current
I2t - value
Table 8
I2t
tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
IF = 10 A
Reverse current
Ir
Tvj = 150 °C, VR = 1600 V
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj, op
Datasheet
A²s
Tvj = 150 °C
per diode
-40
6
Typ.
Unit
Max.
0.80
V
1
mA
1.54
K/W
150
°C
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FP15R12W1T7_B3
EasyPIM™ module
5 NTC-Thermistor
5
NTC-Thermistor
Table 9
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Rated resistance
R25
Deviation of R100
ΔR/R
Power dissipation
P25
TNTC = 25 °C
Typ.
Unit
Max.
5
TNTC = 100 °C, R100 = 493 Ω
-5
TNTC = 25 °C
kΩ
5
%
20
mW
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
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FP15R12W1T7_B3
EasyPIM™ module
6 Characteristics diagrams
6
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V
30
5.0
27
4.5
24
4.0
21
3.5
18
3.0
15
2.5
12
2.0
9
1.5
6
1.0
3
0.5
0
0.0
5
Datasheet
0.5
6
7
8
9
10
11
12
13
14
0
8
5
10
15
20
25
30
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FP15R12W1T7_B3
EasyPIM™ module
6 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 15 A, VCE = 600 V, VGE = ± 15 V
switching times (typical), IGBT, Inverter
t = f(IC)
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =
175 °C
5.0
10
4.5
4.0
1
3.5
3.0
0.1
2.5
2.0
0.01
1.5
1.0
0.001
0.5
0.0
0.0001
0
10
20
30
40
50
60
70
80
0
switching times (typical), IGBT, Inverter
t = f(RG)
IC = 15 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C
5
10
15
20
25
30
dv/dt (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 15 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C
10
10
9
8
1
7
6
0.1
5
4
3
0.01
2
1
0.001
0
0
Datasheet
10
20
30
40
50
60
70
80
0
9
10
20
30
40
50
60
70
80
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FP15R12W1T7_B3
EasyPIM™ module
6 Characteristics diagrams
transient thermal impedance , IGBT, Inverter
Zth = f(t)
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C
10
35
30
25
20
1
15
10
5
0
0.1
0.001
0.01
0.1
1
0
10
capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
200
400
600
800
1000
1200
1400
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
Tvj = 25 °C, IC = 15 A
10
15
10
1
5
0.1
0
-5
0.01
-10
0.001
0
Datasheet
10
20
30
40
50
60
70
80
90
-15
0.00
100
10
0.05
0.10
0.15
0.20
0.25
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2021-03-18
FP15R12W1T7_B3
EasyPIM™ module
6 Characteristics diagrams
forward characteristic (typical), Diode, Inverter
IF = f(VF)
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 7.5 Ω, VCE = 600 V
20
1.2
18
1.1
1.0
16
0.9
14
0.8
12
0.7
10
0.6
8
0.5
0.4
6
0.3
4
0.2
2
0.1
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 600 V, IF = 10 A
2
4
6
8
10
12
14
16
18
20
transient thermal impedance , Diode, Inverter
Zth = f(t)
1.0
10
0.9
0.8
0.7
0.6
0.5
1
0.4
0.3
0.2
0.1
0.0
0
Datasheet
10
20
30
40
50
60
70
0.1
0.001
80
11
0.01
0.1
1
10
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FP15R12W1T7_B3
EasyPIM™ module
6 Characteristics diagrams
forward characteristic (typical), Diode, Rectifier
IF = f(VF)
transient thermal impedance , Diode, Rectifier
Zth = f(t)
20
10
18
16
14
1
12
10
8
0.1
6
4
2
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.001
1.4
0.01
0.1
1
10
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
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FP15R12W1T7_B3
EasyPIM™ module
7 Circuit diagram
7
Circuit diagram
J
Figure 2
Datasheet
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FP15R12W1T7_B3
EasyPIM™ module
8 Package outlines
8
Package outlines
In fin eon
Figure 3
Datasheet
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FP15R12W1T7_B3
EasyPIM™ module
9 Module label code
9
Module label code
Module label code
Code format
Data Matrix
Barcode Code128
Encoding
ASCII text
Code Set A
Symbol size
16x16
23 digits
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
Digit
1–5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 4
2
Datasheet
15
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Trademarks
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Edition 2021-03-18
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
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IMPORTANT NOTICE
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event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
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hereby disclaims any and all warranties and liabilities
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of the Automotive Electronics Council.
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