FP15R12W1T7PB11BPSA1

FP15R12W1T7P_B11 EasyPIM™ module Preliminary datasheet EasyPIM™ module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC / TIM Features • Electrical features - TRENCHSTOPTM IGBT7 - Overload operation up to 175°C - Low VCEsat • Mechanical features - Pre-applied Thermal Interface Material - High power density - PressFIT contact technology - Compact design - Al2O3 substrate with low thermal resistance - 2.5 kV AC 1 min insulation Potential applications • Air conditioning • Auxiliary inverters • Motor drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Datasheet 2 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal Isolation RMS, f = 50 Hz, t = 1 min Values Unit 2.5 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.5 mm Creepage distance dCreep terminal to terminal 6.3 mm Clearance dClear terminal to heatsink 10.0 mm Clearance dClear terminal to terminal 5.0 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 30 nH Module lead resistance, terminals - chip RAA'+CC' TH=25°C, per switch 6 mΩ Module lead resistance, terminals - chip RCC'+EE' TH=25°C, per switch 8 mΩ Storage temperature Maximum baseplate operation temperature Tstg TBPmax Mounting force per clamp F Weight G Note: 2 Table 3 -40 20 °C 125 °C 50 N 24 g Values Unit Tvj = 25 °C 1200 V TH = 110 °C 15 A 30 A The current under continuous operation is limited to 25A rms per connector pin. Storage and shipment of modules with TIM => see AN 2012-07 IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Datasheet 125 3 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 2 IGBT, Inverter Table 3 Maximum rated values (continued) Parameter Symbol Note or test condition Gate-emitter peak voltage Table 4 VGES Values Unit ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 15 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 6.45 V IC = 0.553 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.234 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 2.82 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.0099 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 15 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse Datasheet tr tdoff tf Eon Eoff IC = 15 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω IC = 15 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 15 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 15 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 750 A/µs (Tvj = 175 °C) IC = 15 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 4000 V/µs (Tvj = 175 °C) 4 Tvj = 25 °C Tvj = 25 °C 0.023 Tvj = 125 °C 0.025 Tvj = 175 °C 0.026 Tvj = 25 °C 0.012 Tvj = 125 °C 0.015 Tvj = 175 °C 0.016 Tvj = 25 °C 0.144 Tvj = 125 °C 0.190 Tvj = 175 °C 0.256 Tvj = 25 °C 0.199 Tvj = 125 °C 0.301 Tvj = 175 °C 0.329 Tvj = 25 °C 0.87 Tvj = 125 °C 1.21 Tvj = 175 °C 1.45 Tvj = 25 °C 0.922 Tvj = 125 °C 1.44 Tvj = 175 °C 1.8 0.003 mA 100 nA µs µs µs µs mJ mJ 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. SC data ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 3 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 48 tP ≤ 7 µs, Tvj = 175 °C 45 per IGBT, Valid with IFX pre-applied Thermal Interface Material -40 Max. A 1.86 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 10 A 20 A Tvj = 125 °C 27.5 A²s Tvj = 175 °C 24 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Datasheet Typ. Unit VF IRM IF = 10 A, VGE = 0 V IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 700 A/µs (Tvj = 175 °C) 5 Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 15.5 Tvj = 125 °C 19.2 Tvj = 175 °C 22.5 V A 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 4 Typ. IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 700 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.82 Tvj = 125 °C 1.46 Tvj = 175 °C 2.05 IF = 10 A, VR = 600 V, VGE = -15 V, -diF/dt = 700 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.31 Tvj = 125 °C 0.57 Tvj = 175 °C 0.82 per diode, Valid with IFX pre-applied Thermal Interface Material -40 Unit Max. µC mJ 2.68 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TH = 100 °C 25 A Maximum RMS current at rectifier output IRMSM TH = 100 °C 25 A IFSM tP = 10 ms Tvj = 25 °C 300 A Tvj = 150 °C 245 Tvj = 25 °C 450 Tvj = 150 °C 300 Surge forward current I2t - value Table 8 I2t tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 10 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Thermal resistance, junction to heatsink Datasheet A²s RthJH Tvj = 150 °C per diode, Valid with IFX pre-applied Thermal Interface Material 6 Typ. Unit Max. 0.80 V 1 mA 1.58 K/W 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 5 IGBT, Brake-Chopper Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 5 Tvj, op Typ. -40 Unit Max. 150 °C IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TH = 110 °C 15 A 30 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 15 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 6.45 V IC = 0.553 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.234 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 2.82 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.0099 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 15 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Datasheet tr IC = 15 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω 7 Tvj = 25 °C Tvj = 25 °C 0.023 Tvj = 125 °C 0.025 Tvj = 175 °C 0.026 Tvj = 25 °C 0.012 Tvj = 125 °C 0.015 Tvj = 175 °C 0.016 0.003 mA 100 nA µs µs 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 6 Diode, Brake-Chopper Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-off delay time (inductive load) tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 6 Table 11 0.144 Tvj = 125 °C 0.190 Tvj = 175 °C 0.256 Tvj = 25 °C 0.199 Tvj = 125 °C 0.301 Tvj = 175 °C 0.329 IC = 15 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 750 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.87 Tvj = 125 °C 1.21 Tvj = 175 °C 1.45 IC = 15 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 4000 V/µs (Tvj = 175 °C) Tvj = 25 °C 0.922 Tvj = 125 °C 1.44 Tvj = 175 °C 1.8 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 48 tP ≤ 7 µs, Tvj = 175 °C 45 IC = 15 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω per IGBT, Valid with IFX pre-applied Thermal Interface Material -40 µs µs mJ mJ A 1.86 K/W 175 °C Diode, Brake-Chopper Maximum rated values Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet Tvj = 25 °C Max. Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Parameter I2t - value IC = 15 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω Typ. Unit IFRM I2t Values Unit 1200 V 10 A 20 A Tvj = 125 °C 27.5 A²s Tvj = 175 °C 24 Tvj = 25 °C tP = 1 ms VR = 0 V, tP = 10 ms 8 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 7 NTC-Thermistor Table 12 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Thermal resistance, junction to heatsink RthJH Temperature under switching conditions Tvj op Note: 7 IF = 10 A, VGE = 0 V IF = 10 A, VR = 600 V, -diF/dt = 700 A/µs (Tvj = 175 °C) IF = 10 A, VR = 600 V, -diF/dt = 700 A/µs (Tvj = 175 °C) IF = 10 A, VR = 600 V, -diF/dt = 700 A/µs (Tvj = 175 °C) Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 15.5 Tvj = 125 °C 19.2 Tvj = 175 °C 22.5 Tvj = 25 °C 0.82 Tvj = 125 °C 1.46 Tvj = 175 °C 2.05 Tvj = 25 °C 0.31 Tvj = 125 °C 0.57 Tvj = 175 °C 0.82 per diode, Valid with IFX pre-applied Thermal Interface Material -40 V A µC mJ 2.68 K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 9 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V 30 5.0 27 4.5 24 4.0 21 3.5 18 3.0 15 2.5 12 2.0 9 1.5 6 1.0 3 0.5 0 0.0 5 Datasheet 0.5 6 7 8 9 10 11 12 13 14 0 10 5 10 15 20 25 30 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 15 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT, Inverter t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 5.0 10 4.5 4.0 1 3.5 3.0 0.1 2.5 2.0 0.01 1.5 1.0 0.001 0.5 0.0 0.0001 0 10 20 30 40 50 60 70 80 0 switching times (typical), IGBT, Inverter t = f(RG) IC = 15 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 5 10 15 20 25 30 dv/dt (typical), IGBT, Inverter dv/dt = f(RG) IC = 15 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 10 10 9 8 1 7 6 0.1 5 4 3 0.01 2 1 0.001 0 0 Datasheet 10 20 30 40 50 60 70 80 0 11 10 20 30 40 50 60 70 80 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams transient thermal impedance , IGBT, Inverter Zth = f(t) reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C 10 35 30 25 20 1 15 10 5 0 0.1 0.001 0.01 0.1 1 0 10 capacity characteristic (typical), IGBT, Inverter C = f(VCE) VGE = 0 V, Tvj = 25 °C, f = 100 kHz 200 400 600 800 1000 1200 1400 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 15 A, Tvj = 25 °C 10 15 10 1 5 0.1 0 -5 0.01 -10 0.001 0 Datasheet 10 20 30 40 50 60 70 80 90 -15 0.00 100 12 0.05 0.10 0.15 0.20 0.25 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 7.5 Ω, VCE = 600 V 20 1.2 18 1.1 1.0 16 0.9 14 0.8 12 0.7 10 0.6 8 0.5 0.4 6 0.3 4 0.2 2 0.1 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 10 A 2 4 6 8 10 12 14 16 18 20 transient thermal impedance , Diode, Inverter Zth = f(t) 1.0 10 0.9 0.8 0.7 0.6 0.5 1 0.4 0.3 0.2 0.1 0.0 0 Datasheet 10 20 30 40 50 60 70 0.1 0.001 80 13 0.01 0.1 1 10 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams forward characteristic (typical), Diode, Rectifier IF = f(VF) transient thermal impedance , Diode, Rectifier Zth = f(t) 20 10 18 16 14 1 12 10 8 0.1 6 4 2 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 30 0.01 0.1 1 10 forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 20 18 25 16 14 20 12 15 10 8 10 6 4 5 2 0 0 0.0 Datasheet 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 14 0.5 1.0 1.5 2.0 2.5 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 15 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 9 Circuit diagram 9 Circuit diagram J Figure 2 Datasheet 16 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 10 Package outlines 10 Package outlines Infineon Figure 3 Datasheet 17 0.10 2021-03-18 FP15R12W1T7P_B11 EasyPIM™ module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 18 0.10 2021-03-18 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-03-18 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX- IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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