FP50R12N2T7B11BPSA2

FP50R12N2T7_B11 EconoPIM™2 module Preliminary datasheet EconoPIM™2 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 1200 V - IC nom = 50 A / ICRM = 100 A - TRENCHSTOPTM IGBT7 - Low VCEsat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate with low thermal resistance - PressFIT contact technology Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 35 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 5.5 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 4.8 mΩ Storage temperature Tstg Mounting torque for modul mounting M Weight G 2 Table 3 - Mounting according to M5, Screw valid application note 125 °C 3 6 Nm 180 g Values Unit Tvj = 25 °C 1200 V TC = 100 °C 50 A 100 A ±20 V IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet -40 3 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 2 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Datasheet tr tdoff tf Eon Eoff ISC Tvj = 25 °C Tvj = 25 °C 0.059 Tvj = 125 °C 0.061 Tvj = 175 °C 0.062 Tvj = 25 °C 0.043 Tvj = 125 °C 0.047 Tvj = 175 °C 0.049 Tvj = 25 °C 0.290 Tvj = 125 °C 0.380 Tvj = 175 °C 0.420 Tvj = 25 °C 0.110 Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 Tvj = 25 °C 5.07 Tvj = 125 °C 6.76 Tvj = 175 °C 7.72 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 2900 V/µs (Tvj = 175 °C) Tvj = 25 °C 3.37 Tvj = 125 °C 5.31 Tvj = 175 °C 6.58 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 190 tP ≤ 7 µs, Tvj = 175 °C 180 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 900 A/µs (Tvj = 175 °C) 4 0.01 mA 100 nA µs µs µs µs mJ mJ A 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heatsink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Max. 0.579 0.147 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 50 A 100 A Tvj = 125 °C 465 A²s Tvj = 175 °C 420 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Datasheet Typ. Unit VF IRM Qr IF = 50 A, VGE = 0 V VR = 600 V, IF = 35 A, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) 5 Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 31 Tvj = 125 °C 39 Tvj = 175 °C 45 Tvj = 25 °C 3.96 Tvj = 125 °C 7.37 Tvj = 175 °C 9.89 V A µC 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Reverse recovery energy Erec VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 900 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.31 Tvj = 125 °C 2.52 Tvj = 175 °C 3.46 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. mJ 0.900 0.168 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TC = 80 °C 70 A Maximum RMS current at rectifier output IRMSM TC = 80 °C 100 A IFSM tP = 10 ms Tvj = 25 °C 560 A Tvj = 150 °C 435 Tvj = 25 °C 1570 Tvj = 150 °C 945 Surge forward current I2t - value Table 8 I2t tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 50 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Tvj = 150 °C Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λgrease= 1 W/(m*K) Datasheet A²s Typ. Unit Max. 1.05 V 1 mA 0.870 6 0.171 K/W K/W 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 5 IGBT-Chopper Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 5 Tvj, op Typ. -40 Unit Max. 150 °C IGBT-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TC = 100 °C 25 A 50 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 25 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.60 TBD V Tvj = 125 °C 1.74 Tvj = 175 °C 1.82 6.45 V IC = 0.525 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.395 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.77 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.017 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 9.1 Ω Rise time (inductive load) Datasheet tr IC = 25 A, VCE = 600 V, VGE = ±15 V, RGon = 9.1 Ω 7 Tvj = 25 °C Tvj = 25 °C 0.041 Tvj = 125 °C 0.043 Tvj = 175 °C 0.044 Tvj = 25 °C 0.025 Tvj = 125 °C 0.028 Tvj = 175 °C 0.030 0.004 mA 100 nA µs µs 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 6 Diode, Chopper Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-off delay time (inductive load) tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 9.1 Ω Tvj = 25 °C 0.230 Tvj = 125 °C 0.320 Tvj = 175 °C 0.350 Tvj = 25 °C 0.140 Tvj = 125 °C 0.220 Tvj = 175 °C 0.280 IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 9.1 Ω, di/dt = 780 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.47 Tvj = 125 °C 2.05 Tvj = 175 °C 2.39 IC = 25 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 9.1 Ω, dv/dt = 3120 V/µs (Tvj = 175 °C) Tvj = 25 °C 1.65 Tvj = 125 °C 2.58 Tvj = 175 °C 3.13 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 90 tP ≤ 7 µs, Tvj = 175 °C 85 IC = 25 A, VCE = 600 V, VGE = ±15 V, RGoff = 9.1 Ω Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heatsink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 6 Table 11 Max. µs µs mJ mJ A 0.967 0.171 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Chopper Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet Typ. Unit IFRM Tvj = 25 °C tP = 1 ms 8 Values Unit 1200 V 25 A 50 A 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 7 NTC-Thermistor Table 11 Maximum rated values (continued) Parameter Symbol Note or test condition I2t - value I2t Table 12 tP = 10 ms, VR = 0 V Values Unit Tvj = 125 °C 125 A²s Tvj = 175 °C 95 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Typ. Max. Tvj = 25 °C 1.83 TBD Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 Tvj = 25 °C 18 Tvj = 125 °C 25 Tvj = 175 °C 29 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 395 A/µs (Tvj = 175 °C) Tvj = 25 °C 2.79 Tvj = 125 °C 3.36 Tvj = 175 °C 4.41 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 395 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.36 Tvj = 125 °C 1.54 Tvj = 175 °C 2.03 IF = 25 A, VGE = 0 V VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 395 A/µs (Tvj = 175 °C) Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 7 A µC mJ 1.43 0.182 -40 V K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 13 Parameter Characteristic values Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 Datasheet Unit TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω TNTC = 25 °C 9 -5 kΩ 5 % 20 mW 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 7 NTC-Thermistor Table 13 Parameter Characteristic values (continued) Symbol Note or test condition Values Min. Typ. Unit Max. B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 10 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V 100 26 90 24 22 80 20 70 18 60 16 14 50 12 40 10 30 8 6 20 4 10 2 0 0 5 Datasheet 0.5 6 7 8 9 10 11 12 0 13 11 10 20 30 40 50 60 70 80 90 100 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT, Inverter t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 40 10 36 32 1 28 24 20 0.1 16 12 0.01 8 4 0 0.001 0 10 20 30 40 50 60 70 80 0 switching times (typical), IGBT, Inverter t = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 10 20 30 40 50 60 70 80 90 100 transient thermal impedance , IGBT, Inverter Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 10 20 30 40 50 60 70 0.01 0.001 80 12 0.01 0.1 1 10 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C dv/dt (typical), IGBT, Inverter dv/dt = f(RG) IC = 50 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 130 8 120 7 110 100 6 90 5 80 70 4 60 50 3 40 2 30 20 1 10 0 0 0 200 400 600 800 1000 1200 0 1400 capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 10 20 30 40 50 60 70 80 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 50 A, Tvj = 25 °C 1000 15 10 100 5 10 0 1 -5 0.1 -10 -15 0.01 0 Datasheet 10 20 30 40 50 60 70 80 90 0.0 100 13 0.2 0.4 0.6 0.8 1.0 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 7.5 Ω, VCE = 600 V 100 5.0 90 4.5 80 4.0 70 3.5 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0 0.0 0.5 1.0 1.5 2.0 0.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 50 A 10 20 30 40 50 60 70 80 90 100 transient thermal impedance , Diode, Inverter Zth = f(t) 10 5.0 4.5 4.0 3.5 1 3.0 2.5 2.0 0.1 1.5 1.0 0.5 0.0 0 Datasheet 10 20 30 40 50 60 70 0.01 0.001 80 14 0.01 0.1 1 10 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams forward characteristic (typical), Diode, Rectifier IF = f(VF) transient thermal impedance , Diode, Rectifier Zth = f(t) 10 100 90 80 70 1 60 50 40 0.1 30 20 10 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 output characteristic (typical), IGBT-Chopper IC = f(VCE) VGE = 15 V 0.1 1 10 forward characteristic (typical), Diode, Chopper IF = f(VF) 50 50 45 45 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 0.0 Datasheet 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 4.0 15 0.5 1.0 1.5 2.0 2.5 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 16 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 9 Circuit diagram 9 Circuit diagram J Figure 2 Datasheet 17 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 10 Package outlines 10 Package outlines In fin e o n Figure 3 Datasheet 18 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 19 0.10 2021-06-17 FP50R12N2T7_B11 EconoPIM™2 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-06-17 Initial version Datasheet 20 0.10 2021-06-17 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-06-17 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB324-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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