FP50R12N2T7P_B11
EconoPIM™2 module
EconoPIM™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC / TIM
Features
• Electrical features
- VCES = 1200 V
- IC nom = 50 A / ICRM = 100 A
- TRENCHSTOPTM IGBT7
- Low VCE,sat
- Overload operation up to 175°C
• Mechanical features
- High power and thermal cycling capability
- Integrated NTC temperature sensor
- Copper base plate
- Al2O3 substrate with low thermal resistance
- PressFIT contact technology
- Pre-applied thermal interface material
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
J
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
IGBT-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Diode, Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
7
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
8
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
9
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
10
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Datasheet
2
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
Material of module
baseplate
Values
Unit
2.5
kV
Cu
Internal Isolation
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to heatsink
7.5
mm
Comparative tracking index
CTI
RTI Elec.
RTI
Table 2
> 200
housing
140
°C
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Stray inductance module
LsCE
Typ.
Max.
35
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TH=25°C, per switch
5.5
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TH=25°C, per switch
4.8
mΩ
Storage temperature
Maximum baseplate
operation temperature
Tstg
TBPmax
Mounting torque for modul
mounting
M
Weight
G
Note:
2
Table 3
-40
- Mounting according to M5, Screw
valid application note
°C
125
°C
6
Nm
180
g
Values
Unit
Tvj = 25 °C
1200
V
TH = 95 °C
50
A
100
A
The current under continuous operation is limited to 50 A rms per connector pin.
Storage and shipment of modules with TIM => see AN2012-07
IGBT, Inverter
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Datasheet
3
125
3
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
2 IGBT, Inverter
Table 3
Maximum rated values (continued)
Parameter
Symbol Note or test condition
Gate-emitter peak voltage
Table 4
VGES
Values
Unit
±20
V
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 50 A, VGE = 15 V
Typ.
Max.
Tvj = 25 °C
1.50
1.80
V
Tvj = 125 °C
1.64
Tvj = 175 °C
1.72
6.45
V
IC = 2 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
0.92
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
11.1
nF
Reverse transfer capacitance
Cres
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.039
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGon = 7.5 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
Datasheet
tr
tdoff
tf
Eon
Eoff
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGon = 7.5 Ω
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGoff = 7.5 Ω
IC = 50 A, VCE = 600 V,
VGE = ±15 V, RGoff = 7.5 Ω
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 7.5 Ω, di/dt = 900
A/µs (Tvj = 175 °C)
IC = 50 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 7.5 Ω, dv/dt =
2900 V/µs (Tvj = 175 °C)
4
Tvj = 25 °C
Tvj = 25 °C
0.059
Tvj = 125 °C
0.061
Tvj = 175 °C
0.062
Tvj = 25 °C
0.043
Tvj = 125 °C
0.047
Tvj = 175 °C
0.049
Tvj = 25 °C
0.290
Tvj = 125 °C
0.380
Tvj = 175 °C
0.420
Tvj = 25 °C
0.110
Tvj = 125 °C
0.200
Tvj = 175 °C
0.270
Tvj = 25 °C
5.07
Tvj = 125 °C
6.76
Tvj = 175 °C
7.72
Tvj = 25 °C
3.37
Tvj = 125 °C
5.31
Tvj = 175 °C
6.58
0.01
mA
100
nA
µs
µs
µs
µs
mJ
mJ
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
3 Diode, Inverter
Table 4
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
SC data
ISC
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
3
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
190
tP ≤ 7 µs,
Tvj = 175 °C
180
per IGBT, Valid with IFX pre-applied Thermal
Interface Material
-40
Max.
A
0.777
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
I2t - value
Table 6
IFRM
I2t
Values
Unit
1200
V
50
A
100
A
Tvj = 125 °C
465
A²s
Tvj = 175 °C
420
Tvj = 25 °C
tP = 1 ms
VR = 0 V, tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Datasheet
Typ.
Unit
VF
IRM
IF = 50 A, VGE = 0 V
IF = 35 A, VR = 600 V,
VGE = -15 V, -diF/dt = 900
A/µs (Tvj = 175 °C)
5
Unit
Typ.
Max.
Tvj = 25 °C
1.72
2.10
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
Tvj = 25 °C
31
Tvj = 125 °C
39
Tvj = 175 °C
45
V
A
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
4 Diode, Rectifier
Table 6
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Recovered charge
Qr
Reverse recovery energy
Erec
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
4
Typ.
IF = 50 A, VR = 600 V,
VGE = -15 V, -diF/dt = 900
A/µs (Tvj = 175 °C)
Tvj = 25 °C
3.96
Tvj = 125 °C
7.37
Tvj = 175 °C
9.89
IF = 50 A, VR = 600 V,
VGE = -15 V, -diF/dt = 900
A/µs (Tvj = 175 °C)
Tvj = 25 °C
1.31
Tvj = 125 °C
2.52
Tvj = 175 °C
3.46
per diode, Valid with IFX pre-applied
Thermal Interface Material
-40
Unit
Max.
µC
mJ
1.13
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Diode, Rectifier
Table 7
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
Repetitive peak reverse
voltage
VRRM
Tvj = 25 °C
1600
V
Maximum RMS forward
current per chip
IFRMSM
TH = 60 °C
70
A
Maximum RMS current at
rectifier output
IRMSM
TH = 60 °C
100
A
IFSM
tP = 10 ms
Tvj = 25 °C
560
A
Tvj = 150 °C
435
Tvj = 25 °C
1570
Tvj = 150 °C
945
Surge forward current
I2t - value
Table 8
I2t
tP = 10 ms
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
IF = 50 A
Reverse current
Ir
Tvj = 150 °C, VR = 1600 V
Thermal resistance, junction
to heatsink
Datasheet
A²s
RthJH
Tvj = 150 °C
per diode, Valid with IFX pre-applied
Thermal Interface Material
6
Typ.
Unit
Max.
1.05
V
1
mA
1.10
K/W
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
5 IGBT-Chopper
Table 8
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Temperature under
switching conditions
5
Tvj, op
Typ.
-40
Unit
Max.
150
°C
IGBT-Chopper
Table 9
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Table 10
Values
Unit
Tvj = 25 °C
1200
V
TH = 110 °C
25
A
50
A
±20
V
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 25 A, VGE = 15 V
Typ.
Max.
Tvj = 25 °C
1.60
1.85
V
Tvj = 125 °C
1.74
Tvj = 175 °C
1.82
6.45
V
IC = 0.525 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
0.395
µC
0
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
4.77
nF
Reverse transfer capacitance
Cres
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.017
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 25 A, VCE = 600 V,
VGE = ±15 V, RGon = 9.1 Ω
Rise time (inductive load)
Datasheet
tr
IC = 25 A, VCE = 600 V,
VGE = ±15 V, RGon = 9.1 Ω
7
Tvj = 25 °C
Tvj = 25 °C
0.041
Tvj = 125 °C
0.043
Tvj = 175 °C
0.044
Tvj = 25 °C
0.025
Tvj = 125 °C
0.028
Tvj = 175 °C
0.030
0.004
mA
100
nA
µs
µs
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
6 Diode, Chopper
Table 10
Characteristic values (continued)
Parameter
Symbol Note or test condition
Values
Min.
Turn-off delay time
(inductive load)
tdoff
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tf
Eon
Eoff
ISC
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
6
Table 11
0.230
Tvj = 125 °C
0.320
Tvj = 175 °C
0.350
Tvj = 25 °C
0.140
Tvj = 125 °C
0.220
Tvj = 175 °C
0.280
IC = 25 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 9.1 Ω, di/dt = 780
A/µs (Tvj = 175 °C)
Tvj = 25 °C
1.47
Tvj = 125 °C
2.05
Tvj = 175 °C
2.39
IC = 25 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 9.1 Ω, dv/dt =
3120 V/µs (Tvj = 175 °C)
Tvj = 25 °C
1.65
Tvj = 125 °C
2.58
Tvj = 175 °C
3.13
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj = 150 °C
90
tP ≤ 7 µs,
Tvj = 175 °C
85
IC = 25 A, VCE = 600 V,
VGE = ±15 V, RGoff = 9.1 Ω
per IGBT, Valid with IFX pre-applied Thermal
Interface Material
-40
µs
µs
mJ
mJ
A
1.19
K/W
175
°C
Diode, Chopper
Maximum rated values
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continous DC forward
current
IF
Repetitive peak forward
current
Datasheet
Tvj = 25 °C
Max.
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
Parameter
I2t - value
IC = 25 A, VCE = 600 V,
VGE = ±15 V, RGoff = 9.1 Ω
Typ.
Unit
IFRM
I2t
Values
Unit
1200
V
25
A
50
A
Tvj = 125 °C
125
A²s
Tvj = 175 °C
95
Tvj = 25 °C
tP = 1 ms
VR = 0 V, tP = 10 ms
8
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
7 NTC-Thermistor
Table 12
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
VF
Peak reverse recovery
current
Recovered charge
IRM
Qr
Reverse recovery energy
Erec
Thermal resistance, junction
to heatsink
RthJH
Temperature under
switching conditions
Tvj op
Note:
7
Unit
Typ.
Max.
Tvj = 25 °C
1.83
2.28
Tvj = 125 °C
1.70
Tvj = 175 °C
1.63
Tvj = 25 °C
18
Tvj = 125 °C
25
Tvj = 175 °C
29
IF = 25 A, VR = 600 V,
VGE = -15 V, -diF/dt = 395
A/µs (Tvj = 175 °C)
Tvj = 25 °C
2.79
Tvj = 125 °C
3.36
Tvj = 175 °C
4.41
IF = 25 A, VR = 600 V,
VGE = -15 V, -diF/dt = 395
A/µs (Tvj = 175 °C)
Tvj = 25 °C
1.36
Tvj = 125 °C
1.54
Tvj = 175 °C
2.03
IF = 25 A, VGE = 0 V
IF = 25 A, VR = 600 V,
VGE = -15 V, -diF/dt = 395
A/µs (Tvj = 175 °C)
per diode, Valid with IFX pre-applied
Thermal Interface Material
-40
V
A
µC
mJ
1.63
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN
2018-14.
NTC-Thermistor
Table 13
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Rated resistance
R25
Deviation of R100
ΔR/R
Power dissipation
P25
TNTC = 25 °C
Typ.
Unit
Max.
5
TNTC = 100 °C, R100 = 493 Ω
-5
TNTC = 25 °C
kΩ
5
%
20
mW
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
9
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
8
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
100
100
90
90
80
80
70
70
60
60
50
50
40
40
30
30
20
20
10
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 50 A, VCE = 600 V, VGE = ± 15 V
100
40
90
36
80
32
70
28
60
24
50
20
40
16
30
12
20
8
10
4
0
0
5
Datasheet
0.5
6
7
8
9
10
11
12
13
0
10
10
20
30
40
50
60
70
80
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
dv/dt (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 50 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C
1000
8
7
100
6
5
10
4
1
3
2
0.1
1
0
0.01
0
10
20
30
40
50
60
70
80
90
0
100
switching times (typical), IGBT, Inverter
t = f(IC)
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =
175 °C
10
20
30
40
50
60
70
80
70
80
switching times (typical), IGBT, Inverter
t = f(RG)
IC = 50 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C
10
10
1
1
0.1
0.1
0.01
0.001
0.01
0
Datasheet
10
20
30
40
50
60
70
80
90
100
0
11
10
20
30
40
50
60
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V
transient thermal impedance , IGBT, Inverter
Zth = f(t)
1
26
24
22
20
18
16
14
0.1
12
10
8
6
4
2
0
0
10
20
30
40
50
60
70
80
90
0.01
0.001
100
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C
0.01
0.1
1
10
gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 50 A, Tvj = 25 °C
130
15
120
110
10
100
90
5
80
70
0
60
50
-5
40
30
-10
20
10
0
-15
0
Datasheet
200
400
600
800
1000
1200
1400
0.0
12
0.2
0.4
0.6
0.8
1.0
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 7.5 Ω, VCE = 600 V
forward characteristic (typical), Diode, Inverter
IF = f(VF)
5.0
100
4.5
90
4.0
80
3.5
70
3.0
60
2.5
50
2.0
40
1.5
30
1.0
20
0.5
10
0.0
0
0
10
20
30
40
50
60
70
80
90
0.0
100
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 600 V, IF = 50 A
0.5
1.0
1.5
2.0
2.5
transient thermal impedance , Diode, Inverter
Zth = f(t)
10
5.0
4.5
4.0
3.5
1
3.0
2.5
2.0
0.1
1.5
1.0
0.5
0.0
0
Datasheet
10
20
30
40
50
60
70
0.01
0.001
80
13
0.01
0.1
1
10
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
transient thermal impedance , Diode, Rectifier
Zth = f(t)
forward characteristic (typical), Diode, Rectifier
IF = f(VF)
10
100
90
80
70
1
60
50
40
0.1
30
20
10
0
0.01
0.001
0.01
0.1
1
0.0
10
output characteristic (typical), IGBT-Chopper
IC = f(VCE)
VGE = 15 V
0.4
0.6
0.8
1.0
1.2
1.4
forward characteristic (typical), Diode, Chopper
IF = f(VF)
50
50
45
45
40
40
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0.0
Datasheet
0.2
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
4.0
14
0.5
1.0
1.5
2.0
2.5
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
8 Characteristics diagrams
temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
15
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
9 Circuit diagram
9
Circuit diagram
J
Figure 2
Datasheet
16
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
10 Package outlines
10
Package outlines
Infineon
Figure 3
Datasheet
17
Revision 1.00
2021-09-22
FP50R12N2T7P_B11
EconoPIM™2 module
Revision history
Revision history
Document revision
Date of release
Description of changes
1.00
2021-09-22
Initial version
Datasheet
18
Revision 1.00
2021-09-22
Trademarks
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Edition 2021-09-22
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
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Document reference
IFX-ABB324-001
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