FP75R12N2T7B11BPSA2

FP75R12N2T7_B11 EconoPIM™2 module Preliminary datasheet EconoPIM™2 module with TRENCHSTOP™IGBT7 and Emitter Controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 1200 V - IC nom = 75 A / ICRM = 150 A - TRENCHSTOPTM IGBT7 - Low VCEsat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate with low thermal resistance - PressFIT contact technology Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal Isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI RTI Elec. RTI Table 2 > 200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 35 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 5.6 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 5.3 mΩ Storage temperature Tstg Mounting torque for modul mounting M Weight G 2 Table 3 - Mounting according to M5, Screw valid application note 125 °C 3 6 Nm 180 g Values Unit Tvj = 25 °C 1200 V TC = 100 °C 75 A 150 A ±20 V IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet -40 3 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 75 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.55 TBD V Tvj = 125 °C 1.69 Tvj = 175 °C 1.77 6.45 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 1.25 µC 2 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 15.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.053 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 75 A, VCE = 600 V, VGE = ±15 V, RGon = 5.6 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data Datasheet tr tdoff tf Eon Eoff ISC Tvj = 25 °C Tvj = 25 °C 0.146 Tvj = 125 °C 0.162 Tvj = 175 °C 0.169 Tvj = 25 °C 0.053 Tvj = 125 °C 0.057 Tvj = 175 °C 0.060 Tvj = 25 °C 0.320 Tvj = 125 °C 0.390 Tvj = 175 °C 0.440 Tvj = 25 °C 0.110 Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 IC = 75 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5.6 Ω, di/dt = 1050 A/µs (Tvj = 175 °C) Tvj = 25 °C 8.05 Tvj = 125 °C 10.6 Tvj = 175 °C 12.3 IC = 75 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 5.6 Ω, dv/dt = 3150 V/µs (Tvj = 175 °C) Tvj = 25 °C 4.95 Tvj = 125 °C 7.76 Tvj = 175 °C 9.51 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 260 tP ≤ 7 µs, Tvj = 175 °C 250 IC = 75 A, VCE = 600 V, VGE = ±15 V, RGon = 5.6 Ω IC = 75 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.6 Ω IC = 75 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.6 Ω 4 0.014 mA 100 nA µs µs µs µs mJ mJ A 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 3 Diode, Inverter Table 4 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heatsink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Max. 0.475 0.141 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current I2t - value Table 6 IFRM I2t Values Unit 1200 V 75 A 150 A Tvj = 125 °C 1150 A²s Tvj = 175 °C 740 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Datasheet Typ. Unit VF IRM Qr Unit Typ. Max. Tvj = 25 °C 1.72 TBD Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/µs (Tvj = 175 °C) Tvj = 25 °C 38 Tvj = 125 °C 51 Tvj = 175 °C 59 VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/µs (Tvj = 175 °C) Tvj = 25 °C 5.43 Tvj = 125 °C 10.4 Tvj = 175 °C 14.1 IF = 75 A, VGE = 0 V 5 V A µC 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 4 Diode, Rectifier Table 6 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Reverse recovery energy Erec VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 1050 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.79 Tvj = 125 °C 3.5 Tvj = 175 °C 4.83 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. mJ 0.708 0.153 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Unit 1600 V Repetitive peak reverse voltage VRRM Maximum RMS forward current per chip IFRMSM TC = 95 °C 75 A Maximum RMS current at rectifier output IRMSM TC = 95 °C 100 A IFSM tP = 10 ms Tvj = 25 °C 745 A Tvj = 150 °C 515 Tvj = 25 °C 2780 Tvj = 150 °C 1330 Surge forward current I2t - value Table 8 I2t Tvj = 150 °C Values tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Tvj = 150 °C, IF = 75 A Reverse current Ir Tvj = 150 °C, VR = 1600 V Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λPaste= 1 W /(m*K) / λgrease= 1 W/(m*K) Datasheet A²s Typ. Unit Max. 1.06 V 1 mA 0.697 6 0.153 K/W K/W 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 5 IGBT, Brake-Chopper Table 8 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 5 Tvj, op Typ. -40 Unit Max. 150 °C IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TC = 115 °C 50 A 100 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.50 TBD V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Datasheet tr IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω 7 Tvj = 25 °C Tvj = 25 °C 0.059 Tvj = 125 °C 0.061 Tvj = 175 °C 0.062 Tvj = 25 °C 0.035 Tvj = 125 °C 0.039 Tvj = 175 °C 0.041 0.007 mA 100 nA µs µs 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 6 Diode, Brake-Chopper Table 10 Characteristic values (continued) Parameter Symbol Note or test condition Values Min. Turn-off delay time (inductive load) tdoff Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tf Eon Eoff ISC IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 1145 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.290 Tvj = 125 °C 0.380 Tvj = 175 °C 0.420 Tvj = 25 °C 0.110 Tvj = 125 °C 0.200 Tvj = 175 °C 0.270 Tvj = 25 °C 3.37 Tvj = 125 °C 4.26 Tvj = 175 °C 4.66 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 2940 V/µs (Tvj = 175 °C) Tvj = 25 °C 3.33 Tvj = 125 °C 5.32 Tvj = 175 °C 6.58 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 190 tP ≤ 7 µs, Tvj = 175 °C 180 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heatsink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 6 Table 11 Max. µs µs mJ mJ A 0.580 0.147 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14. Diode, Brake-Chopper Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continous DC forward current IF Repetitive peak forward current Datasheet Typ. Unit IFRM Tvj = 25 °C tP = 1 ms 8 Values Unit 1200 V 25 A 50 A 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 7 NTC-Thermistor Table 11 Maximum rated values (continued) Parameter Symbol Note or test condition I2t - value I2t Table 12 tP = 10 ms, VR = 0 V Values Unit Tvj = 150 °C 125 A²s Tvj = 175 °C 95 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF Peak reverse recovery current Recovered charge IRM Qr Reverse recovery energy Erec Typ. Max. Tvj = 25 °C 1.83 TBD Tvj = 125 °C 1.70 Tvj = 175 °C 1.63 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 375 A/µs (Tvj = 175 °C) Tvj = 25 °C 19.2 Tvj = 125 °C 19.3 Tvj = 175 °C 19.4 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 375 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.59 Tvj = 125 °C 1.63 Tvj = 175 °C 1.64 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 375 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.64 Tvj = 125 °C 0.66 Tvj = 175 °C 0.67 IF = 25 A Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heatsink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 7 A µC mJ 1.43 0.182 -40 V K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN2018-14. NTC-Thermistor Table 13 Parameter Characteristic values Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 Datasheet Unit TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω TNTC = 25 °C 9 -5 kΩ 5 % 20 mW 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 7 NTC-Thermistor Table 13 Parameter Characteristic values (continued) Symbol Note or test condition Values Min. Typ. Unit Max. B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 10 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams 8 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE = ± 15 V 50 150 45 125 40 35 100 30 75 25 20 50 15 10 25 5 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 11 15 30 45 60 75 90 105 120 135 150 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 75 A, VCE = 600 V, VGE = ± 15 V switching times (typical), IGBT, Inverter t = f(IC) RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 60 10 55 50 45 40 1 35 30 25 20 0.1 15 10 5 0 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 0 switching times (typical), IGBT, Inverter t = f(RG) IC = 75 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 15 30 45 60 75 90 105 120 135 150 transient thermal impedance , IGBT, Inverter Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 5 0.01 0.001 10 15 20 25 30 35 40 45 50 55 60 12 0.01 0.1 1 10 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 5.6 Ω, VGE = ±15 V, Tvj = 175 °C dv/dt (typical), IGBT, Inverter dv/dt = f(RG) IC = 75 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 6 200 175 5 150 4 125 100 3 75 2 50 1 25 0 0 0 200 400 600 800 1000 1200 1400 0 capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 5 10 15 20 25 30 35 40 45 50 55 60 gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 75 A, Tvj = 25 °C 100 15 10 10 5 1 0 -5 0.1 -10 0.01 -15 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0.0 13 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams forward characteristic (typical), Diode, Inverter IF = f(VF) switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 5.6 Ω, VCE = 600 V 150 6 125 5 100 4 75 3 50 2 25 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 600 V, IF = 75 A 15 30 45 60 75 90 105 120 135 150 transient thermal impedance , Diode, Inverter Zth = f(t) 1 6 5 4 3 0.1 2 1 0 0 Datasheet 5 10 15 0.01 0.001 20 25 30 35 40 45 50 55 60 14 0.01 0.1 1 10 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams Forward characteristic (typical), Diode, Rectifier IF = f(VF) Transient thermal impedance, Diode, Rectifier Zth = f(t) 150 1 135 120 105 90 75 0.1 60 45 30 15 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 50 90 45 80 40 70 35 60 30 50 25 40 20 30 15 20 10 10 5 1 0 0.0 Datasheet 0.1 forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 100 0 0.01 0.5 1.0 1.5 2.0 2.5 3.0 0.0 15 0.5 1.0 1.5 2.0 2.5 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 8 Characteristics diagrams temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 16 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 9 Circuit diagram 9 Circuit diagram J Figure 2 Datasheet 17 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 10 Package outlines 10 Package outlines In fin e o n Figure 3 Datasheet 18 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 4 2 Datasheet 19 0.10 2021-06-23 FP75R12N2T7_B11 EconoPIM™2 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-06-23 Initial version Datasheet 20 0.10 2021-06-23 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-06-23 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB332-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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