FP75R12N3T7BPSA1

FP75R12N3T7 EconoPIM™3 module Preliminary datasheet EconoPIM™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 75 A / ICRM = 150 A - TRENCHSTOPTM IGBT7 - Overload operation up to 175°C - Low VCE,sat • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Solder contact technology - Standard housing - Al2O3 substrate with low thermal resistance Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Diode, Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 IGBT, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Diode, Brake-Chopper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9 7 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 8 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 10 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18 11 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Datasheet 2 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >200 housing 140 °C Values Unit Characteristic values Parameter Symbol Note or test condition Min. Stray inductance module LsCE Typ. Max. 35 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 2.9 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 3.9 mΩ Storage temperature Tstg Mounting torque for module mounting M Weight G Note: 2 Table 3 - Mounting according to M5, Screw valid application note 125 °C 3 6 Nm 300 g Values Unit Tvj = 25 °C 1200 V TC = 100 °C 75 A 150 A ±20 V The current under continuous operation is limited to 50A rms per connector pin. IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Datasheet -40 3 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 75 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.55 1.80 V Tvj = 125 °C 1.69 Tvj = 175 °C 1.77 6.45 V IC = 1.7 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 1.25 µC 2 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 15.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.053 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 75 A, VCE = 600 V, VGE = ±15 V, RGon = 5.6 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse tr tdoff tf Eon Eoff IC = 75 A, VCE = 600 V, VGE = ±15 V, RGon = 5.6 Ω IC = 75 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.6 Ω IC = 75 A, VCE = 600 V, VGE = ±15 V, RGoff = 5.6 Ω IC = 75 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 5.6 Ω, di/dt = 910 A/µs (Tvj = 175 °C) IC = 75 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 5.6 Ω, dv/dt = 3200 V/µs (Tvj = 175 °C) Tvj = 25 °C Tvj = 25 °C 0.145 Tvj = 125 °C 0.157 Tvj = 175 °C 0.167 Tvj = 25 °C 0.060 Tvj = 125 °C 0.064 Tvj = 175 °C 0.066 Tvj = 25 °C 0.289 Tvj = 125 °C 0.372 Tvj = 175 °C 0.424 Tvj = 25 °C 0.112 Tvj = 125 °C 0.216 Tvj = 175 °C 0.281 Tvj = 25 °C 9.09 Tvj = 125 °C 11.8 Tvj = 175 °C 13.4 Tvj = 25 °C 5 Tvj = 125 °C 8.09 Tvj = 175 °C 9.74 0.013 mA 100 nA µs µs µs µs mJ mJ (table continues...) Datasheet 4 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. SC data ISC VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj = 150 °C 260 tP ≤ 7 µs, Tvj = 175 °C 250 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Typ. Unit Max. A 0.486 0.0706 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 6 I2t Values Unit 1200 V 75 A 150 A Tvj = 125 °C 820 A²s Tvj = 175 °C 630 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current VF IRM IF = 75 A, VGE = 0 V VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 910 A/µs (Tvj = 175 °C) Unit Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 32 Tvj = 125 °C 43 Tvj = 175 °C 50 V A (table continues...) Datasheet 5 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 4 Diode, Rectifier Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Recovered charge Qr Reverse recovery energy Erec VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 910 A/µs (Tvj = 175 °C) Tvj = 25 °C 4.82 Tvj = 125 °C 10.2 Tvj = 175 °C 13.7 VR = 600 V, IF = 75 A, VGE = -15 V, -diF/dt = 910 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.32 Tvj = 125 °C 3.09 Tvj = 175 °C 4.36 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. µC mJ 0.728 0.0871 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Rectifier Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1600 V Maximum RMS forward current per chip IFRMSM TC = 100 °C 95 A Maximum RMS current at rectifier output IRMSM TC = 100 °C 150 A IFSM tP = 10 ms Tvj = 25 °C 720 A Tvj = 150 °C 565 Tvj = 25 °C 2590 Tvj = 150 °C 1600 Surge forward current I2t - value Table 8 I2t tP = 10 ms A²s Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 75 A Tvj = 150 °C Reverse current Ir Tvj = 150 °C, VR = 1600 V Typ. Unit Max. 1.00 V 1 mA (table continues...) Datasheet 6 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 5 IGBT, Brake-Chopper Table 8 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj, op 5 Typ. Unit Max. 0.602 0.0770 -40 K/W K/W 150 °C IGBT, Brake-Chopper Table 9 Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Table 10 Values Unit Tvj = 25 °C 1200 V TC = 110 °C 50 A 100 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Typ. Max. Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Tvj = 25 °C 0.0062 mA 100 nA (table continues...) Datasheet 7 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 5 IGBT, Brake-Chopper Table 10 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-on delay time (inductive load) Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tdon tr tdoff tf Eon Eoff ISC IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Tvj = 25 °C 0.052 Tvj = 125 °C 0.059 Tvj = 175 °C 0.060 Tvj = 25 °C 0.060 Tvj = 125 °C 0.062 Tvj = 175 °C 0.064 Tvj = 25 °C 0.269 Tvj = 125 °C 0.365 Tvj = 175 °C 0.404 Tvj = 25 °C 0.110 Tvj = 125 °C 0.207 Tvj = 175 °C 0.269 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 625 A/µs (Tvj = 175 °C) Tvj = 25 °C 5.36 Tvj = 125 °C 6.34 Tvj = 175 °C 6.79 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 3045 V/µs (Tvj = 175 °C) Tvj = 25 °C 3.41 Tvj = 125 °C 5.36 Tvj = 175 °C 6.57 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 190 tP ≤ 7 µs, Tvj=175 °C 180 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: Datasheet Typ. Unit Max. µs µs µs µs mJ mJ A 0.598 0.0764 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 8 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 6 Diode, Brake-Chopper 6 Diode, Brake-Chopper Table 11 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Table 12 Values Unit 1200 V 25 A 50 A Tvj = 125 °C 80 A²s Tvj = 175 °C 70 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy VF IRM Qr Erec Typ. Max. Tvj = 25 °C 1.83 2.30 Tvj = 125 °C 1.70 Tvj = 150 °C 1.63 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 685 A/µs (Tvj = 175 °C) Tvj = 25 °C 16 Tvj = 125 °C 21 Tvj = 175 °C 23 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 685 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.67 Tvj = 125 °C 3.26 Tvj = 175 °C 4.23 VR = 600 V, IF = 25 A, VGE = -15 V, -diF/dt = 685 A/µs (Tvj = 175 °C) Tvj = 25 °C 0.54 Tvj = 125 °C 1.17 Tvj = 175 °C 1.58 IF = 25 A Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: Datasheet Unit A µC mJ 1.43 0.182 -40 V K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. 9 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 7 NTC-Thermistor 7 NTC-Thermistor Table 13 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 10 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams 8 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 150 150 125 125 100 100 75 75 50 50 25 25 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 5.6 Ω, RGon = 5.6 Ω, VGE = ±15 V, VCE = 600 V 150 50 45 125 40 35 100 30 75 25 20 50 15 10 25 5 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 11 15 30 45 60 75 90 105 120 135 150 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) VGE = ±15 V, IC = 75 A, VCE = 600 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 5.6 Ω, RGon = 5.6 Ω, VGE = ±15 V, VCE = 600 V, Tvj = 175 °C 10 65 60 55 50 45 1 40 35 30 25 0.1 20 15 10 5 0 0.01 0 5 10 15 20 25 30 35 40 45 50 55 60 0 Switching times (typical), IGBT, Inverter t = f(RG) VGE = ±15 V, IC = 75 A, VCE = 600 V, Tvj = 175 °C 15 30 45 60 75 90 105 120 135 150 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 5 0.01 0.001 10 15 20 25 30 35 40 45 50 55 60 12 0.01 0.1 1 10 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 5.6 Ω, VGE = ±15 V, Tvj = 175 °C Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 75 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 200 7.0 6.5 175 6.0 5.5 150 5.0 4.5 125 4.0 100 3.5 3.0 75 2.5 2.0 50 1.5 1.0 25 0.5 0 0.0 0 200 400 600 800 1000 1200 1400 0 Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 5 10 15 20 25 30 35 40 45 50 55 60 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 75 A, Tvj = 25 °C 100 15 10 10 5 1 0 -5 0.1 -10 -15 0.01 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0.0 13 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 5.6 Ω, VR = 600 V 150 6 125 5 100 4 75 3 50 2 25 1 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0 Switching losses (typical), Diode, Inverter Erec = f(RG) IF = 75 A, VR = 600 V 15 30 45 60 75 90 105 120 135 150 Transient thermal impedance, Diode, Inverter Zth = f(t) 1 6 5 4 3 0.1 2 1 0 0 Datasheet 5 10 15 0.01 0.001 20 25 30 35 40 45 50 55 60 14 0.01 0.1 1 10 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams Forward characteristic (typical), Diode, Rectifier IF = f(VF) Transient thermal impedance, Diode, Rectifier Zth = f(t) 1 150 135 120 105 90 75 0.1 60 45 30 15 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.001 1.4 Output characteristic (typical), IGBT, Brake-Chopper IC = f(VCE) VGE = 15 V 50 90 45 80 40 70 35 60 30 50 25 40 20 30 15 20 10 10 5 1 10 0 0.0 Datasheet 0.1 Forward characteristic (typical), Diode, BrakeChopper IF = f(VF) 100 0 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 15 0.5 1.0 1.5 2.0 2.5 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 8 Characteristics diagrams Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 16 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 9 Circuit diagram 9 Circuit diagram J Figure 1 Datasheet 17 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 10 Package outlines 10 Package outlines Infineon Figure 2 Datasheet 18 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module 11 Module label code 11 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 19 Revision 0.20 2022-03-02 FP75R12N3T7 EconoPIM™3 module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-12-23 Initial version 0.20 2022-03-02 Preliminary datasheet Datasheet 20 Revision 0.20 2022-03-02 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-03-02 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABB809-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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