FS15R06XL4

Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral I²t value Isolations Prüfspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125°C RMS, f= 50Hz, t= 1min Tvj = 25 °C TC = TC = 75 °C 25 °C 75 °C VCES IC,nom. IC ICRM Ptot VGES IF IFRM I²t VISOL 600 15 20 30 V A A A tp= 1ms, TC = Tc= 25°C, Transistor 81 W +20 V 15 A 30 A 34 A²s 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter saturation voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current VGE= 15V, Tvj= 25°C, IC= IC,nom VGE= 15V, Tvj= 125°C, IC= IC,nom VCE= VGE, Tvj= 25°C, IC= VGE= -15V...+15V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE = 600 V, VGE= 0V, Tvj= 25°C 0,4 mA VCEsat VGE(th) QG Cies Cres ICES IGES min. 4,5 typ. 1,95 2,20 5,5 max. 2,55 6,5 V V V - 0,08 - µC 0,675 nF 0,06 nF - - 5 mA VCE= 0V, VGE= 20V, Tvj= 25°C - - 400 nA prepared by: P. Kanschat approved: M. Hierholzer date of publication: revision: 2.0 2002-12-17 1 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) IC= 15 A, VCC = 300 V 18 Ω, Tvj= 25°C 18 Ω, Tvj= 125°C 300 V 18 Ω, Tvj= 25°C 18 Ω, Tvj= 125°C 300 V 18 Ω, Tvj= 25°C 18 Ω, Tvj= 125°C 300 V 18 Ω, Tvj= 25°C 18 Ω, Tvj= 125°C 300 V Eon Eoff ISC LσCE Tc= 25°C RCC´/EE´ tf 18 25 0,45 ns ns mJ td,off 80 110 ns ns tr 7 8 ns ns td,on 20 21 ns ns VGE = ±15V, RG = VGE = ±15V, RG = Anstiegszeit (induktive Last) rise time (inductive load) IC= 15 A, VCC = VGE = ±15V, RG = VGE = ±15V, RG = Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) IC= 15 A, VCC = VGE = ±15V, RG = VGE = ±15V, RG = Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulinduktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip IC= 15 A, VCC = VGE = ±15V, RG = VGE = ±15V, RG = IC= IC= 15 A, VCC = A, VCC = min. typ. max. RG = 18 Ω, Tvj = 125°C, Lσ = 15 nH 15 300 V RG = 18 Ω, Tvj = 125°C, Lσ = 15 nH tP ≤ 10µsec, VGE ≤ 15V, Tvj= 125°C, VCC = 360 V, VCEmax=VCES -LσCE ·|di/dt| - 0,30 - mJ - 68 - A - 25 - nH mΩ - 8 - Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current IF = IF = IF = VR = VR = Sperrverzögerungsladung recovered charge IF = VR = VR = Ausschaltenergie pro Puls reverse recovery energy IF = VR = VR = 15 A, VGE= 0V, Tvj= 25°C 15 A, VGE= 0V, Tvj= 125°C 15 A, -diF/dt = 2000 A/µs IRM Qr 36 37 A A 300 V, VGE= -10V, Tvj= 25°C 300 V, VGE= -10V, Tvj= 125°C 15 A, -diF/dt = 2000 A/µs Erec 0,9 1,4 µC µC 300 V, VGE= -10V, Tvj= 25°C 300 V, VGE= -10V, Tvj= 125°C 15 A, -diF/dt = 2000 A/µs 0,25 0,35 mJ mJ 300 V, VGE= -10V, Tvj= 25°C 300 V, VGE= -10V, Tvj= 125°C VF 1,4 1,35 2 V V 2 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Charakteristische Werte / characteristic values NTC-Widerstand / NTC-thermistor Nennwiderstand rated resistance Abweichung von R100 deviation of R100 Verlustleistung power dissipation B-Wert B-value Tc= 25°C Tc= 100°C, R100= 493Ω Tc= 25°C R2= R1 exp[B(1/T2 - 1/T1)] R25 ∆R/R P25 B25/50 min. typ. 5 max. kΩ % -5 - 5 - - 20 mW - 3375 - K Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal resistance, junction to case; DC Wärmewiderstand; DC thermal resistance, junction to heatsink; DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter λ Paste = 1 W/m*K / λ grease = 1 W/m*K Übergangs-Wärmewiderstand, DC thermal resistance, case to heatsink, DC Transistor Wechselr. / transistor inverter Diode Wechselrichter / diode inverter λ Paste = 1 W/m*K / λ grease = 1 W/m*K Höchstzulässige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Tvjmax Top Tstg 150 °C RthCH 0,65 0,85 K/W K/W RthJH RthJC 1,90 3,20 1,55 2,70 K/W K/W K/W K/W -40 - 125 °C -40 - 125 °C Mechanische Eigenschaften / mechanical properties Innere Isolation internal insulation CTI comperative tracking index Anpresskraft pro Feder mounting force per clamp Gewicht weight Kriechstrecke creepage distance Anschluss - Kühlkörper terminal to heatsink Anschluss - Anschluss terminal to terminal Luftstrecke clearance distance Anschluss - Kühlkörper terminal to heatsink Anschluss - Anschluss terminal to terminal F Al2O3 225 20..50 N G 25 g 10,5 mm 5 mm 9 mm 5 mm 3 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 30 Tvj = 25°C Tvj = 125°C IC= f(VCE) VGE= 15V 20 IC [A] 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) output characteristic (typical) 30 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V IC= f(VCE) Tvj= 125°C 20 IC [A] VGE = 8V 10 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 3,5 4,0 4,5 5,0 4 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Übertragungscharakteristik (typisch) transfer characteristic (typical) 30 IC= f(VGE) VCE= 20V Tvj = 25°C Tvj = 125°C 20 IC [A] 10 0 5 6 7 8 9 VGE [V] 10 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward characteristic of inverse diode (typical) 30 Tvj = 25°C Tvj = 125°C IF= f(VF) 20 IF [A] 10 0 0,0 0,2 0,4 0,6 0,8 1,0 VF [V] 1,2 1,4 1,6 1,8 5 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Schaltverluste (typisch) switching losses (typical) Eon Eoff Erec Eon = f(IC), Eoff = f(IC), Erec = f(IC) VGE= ±15V, RGon=RGoff= 18Ω, VCE= 300V, Tvj= 125°C 1,5 E [mJ] 1 0,5 0 0 5 10 15 IC [A] 20 25 30 Schaltverluste (typisch) switching losses (typical) Eon Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE= ±15V, IC= 15A, VCE= 300V, Tvj= 125°C 1,2 1 0,8 E [mJ] 0,6 0,4 0,2 0 0 20 Eoff Erec 40 60 80 100 RG [ Ω ] 120 140 160 180 6 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Transienter Wärmewiderstand transient thermal impedance 10,00 ZthJH = f (t) ZthJH(K/W) 1,00 Zth:IGBT Zth:Diode 0,10 0,001 0,01 0,1 t (s) 1 10 i ri [K/kW]: IGBT τi [s]: IGBT ri [K/kW]: Diode τi [s]: Diode 1 114,0 0,000379 192,0 0,00031 2 380,0 0,00745 640,0 0,00484 3 1064,0 0,11319 1792,0 0,10644 4 342,0 0,16026 576,0 0,14203 Sicherer Arbeitsbereich (RBSOA) reverse bias safe operation area (RBSOA) 40 IC, Chip IC, Modul VGE=15V, Tj=125°C, RG = 18 Ω 30 IC [A] 20 10 0 0 200 400 VCE [V] 600 7 (8) Technische Information / technical information IGBT-Module IGBT-Modules FS15R06XL4 vorläufige Daten preliminary data Schaltbild circuit diagram ϑ Gehäusemaße package outline Bohrplan drilling layout Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. 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