0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
FS300R12OE4BOSA1

FS300R12OE4BOSA1

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

  • 描述:

    IGBT-MODULES

  • 数据手册
  • 价格&库存
FS300R12OE4BOSA1 数据手册
技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 EconoPACK™+模块采用第四代沟槽栅/场终止IGBT4和HE型发射极控制二极管 带有pressfit压接管脚和温度检测NTC EconoPACK™+modulewithTrench/FieldstopIGBT4andEmitterControlledHEdiodeandPressFIT/NTC VCES = 1200V IC nom = 300A / ICRM = 600A 典型应用 • 电梯 • 大功率变流器 • 商业性农用车辆 • 电机传动 • 太阳能应用 • UPS系统 TypicalApplications • Elevators • HighPowerConverters • CommercialAgricultureVehicles • MotorDrives • SolarApplications • UPSSystems 电气特性 • 高短路能力,自限制短路电流 ElectricalFeatures • High Short Circuit Capability, Self Limiting Short CircuitCurrent • UnbeatableRobustness • TrenchIGBT4 • Tvjop=150°C • Highsurgecurrentcapability • • • • 无与伦比的坚固性 沟槽栅IGBT4 Tvjop=150°C 高冲击电流能力 机械特性 • 高机械坚固性 • 集成NTC温度传感器 • 绝缘的基板 • PressFIT压接技术 • 符合RoHS MechanicalFeatures • Highmechanicalrobustness • IntegratedNTCtemperaturesensor • IsolatedBasePlate • PressFITContactTechnology • RoHScompliant ModuleLabelCode BarcodeCode128 DMX-Code preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 ULapproved(E83335) 1 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 IGBT,逆变器/IGBT,Inverter 最大额定值/MaximumRatedValues 集电极-发射极电压 Collector-emittervoltage Tvj = 25°C VCES  1200  V 连续集电极直流电流 ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C IC nom  IC 300 460  集电极重复峰值电流 Repetitivepeakcollectorcurrent tP = 1 ms ICRM  600  A 总功率损耗 Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot  1650  W 栅极-发射极峰值电压 Gate-emitterpeakvoltage  VGES  +/-20  V 特征值/CharacteristicValues 集电极-发射极饱和电压 Collector-emittersaturationvoltage min. IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C 栅极阈值电压 Gatethresholdvoltage IC = 11,5 mA, VCE = VGE, Tvj = 25°C 栅极电荷 Gatecharge VCE sat A A typ. max. 1,75 2,00 2,05 2,10 V V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG  2,25  µC 内部栅极电阻 Internalgateresistor Tvj = 25°C RGint  2,5  Ω 输入电容 Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies  18,5  nF 反向传输电容 Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres  1,05  nF 集电极-发射极截止电流 Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C ICES   3,0 mA 栅极-发射极漏电流 Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES   400 nA td on  0,19 0,21 0,22  µs µs µs tr  0,05 0,06 0,06  µs µs µs td off  0,40 0,51 0,54  µs µs µs tf  0,06 0,10 0,11  µs µs µs 开通延迟时间(电感负载) Turn-ondelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 0,75 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 上升时间(电感负载) Risetime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGon = 0,75 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 关断延迟时间(电感负载) Turn-offdelaytime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 0,75 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 下降时间(电感负载) Falltime,inductiveload IC = 300 A, VCE = 600 V VGE = ±15 V RGoff = 0,75 Ω Tvj = 25°C Tvj = 125°C Tvj = 150°C 开通损耗能量(每脉冲) Turn-onenergylossperpulse IC = 300 A, VCE = 600 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, di/dt = 5200 A/µs (Tvj = 150°C) Tvj = 125°C RGon = 0,75 Ω Tvj = 150°C Eon  19,0 29,5 32,0  mJ mJ mJ 关断损耗能量(每脉冲) Turn-offenergylossperpulse IC = 300 A, VCE = 600 V, LS = 35 nH Tvj = 25°C VGE = ±15 V, du/dt = 3100 V/µs (Tvj = 150°C) Tvj = 125°C RGoff = 0,75 Ω Tvj = 150°C Eoff  24,5 38,0 42,5  mJ mJ mJ 短路数据 SCdata VGE ≤ 15 V, VCC = 800 V VCEmax = VCES -LsCE ·di/dt ISC  结-外壳热阻 Thermalresistance,junctiontocase 每个IGBT/perIGBT RthJC   外壳-散热器热阻 Thermalresistance,casetoheatsink 每个IGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH  0,045 在开关状态下温度 Temperatureunderswitchingconditions  Tvj op -40  preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 2 tP ≤ 10 µs, Tvj = 150°C 1200  A 0,091 K/W K/W 150 °C 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 二极管,逆变器/Diode,Inverter 最大额定值/MaximumRatedValues 反向重复峰值电压 Repetitivepeakreversevoltage Tvj = 25°C 连续正向直流电流 ContinuousDCforwardcurrent  正向重复峰值电流 Repetitivepeakforwardcurrent tP = 1 ms I2t-值 I²t-value VR = 0 V, tP = 10 ms, Tvj = 125°C VR = 0 V, tP = 10 ms, Tvj = 150°C VRRM  1200  V IF  300  A IFRM  600  A I²t  17500 14500 特征值/CharacteristicValues min.  typ. max. 1,65 1,65 1,65 2,10 A²s A²s 正向电压 Forwardvoltage IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V IF = 300 A, VGE = 0 V Tvj = 25°C Tvj = 125°C Tvj = 150°C VF 反向恢复峰值电流 Peakreverserecoverycurrent IF = 300 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C IRM  290 330 330  A A A 恢复电荷 Recoveredcharge IF = 300 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Qr  28,5 52,5 62,5  µC µC µC 反向恢复损耗(每脉冲) Reverserecoveryenergy IF = 300 A, - diF/dt = 5200 A/µs (Tvj=150°C) Tvj = 25°C VR = 600 V Tvj = 125°C VGE = -15 V Tvj = 150°C Erec  12,5 22,5 25,5  mJ mJ mJ 结-外壳热阻 Thermalresistance,junctiontocase 每个二极管/perdiode RthJC   外壳-散热器热阻 Thermalresistance,casetoheatsink 每个二极管/perdiode λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH  0,048 在开关状态下温度 Temperatureunderswitchingconditions  Tvj op -40  150 min. typ. max. R25  5,00  kΩ ∆R/R -5  5 % P25   20,0 mW V V V 0,14 K/W K/W °C 负温度系数热敏电阻/NTC-Thermistor 特征值/CharacteristicValues 额定电阻值 Ratedresistance TC = 25°C R100偏差 DeviationofR100 TC = 100°C, R100 = 493 Ω 耗散功率 Powerdissipation TC = 25°C B-值 B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50  3375  K B-值 B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80  3411  K B-值 B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100  3433  K 根据应用手册标定 Specificationaccordingtothevalidapplicationnote. preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 3 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 模块/Module 绝缘测试电压 Isolationtestvoltage RMS, f = 50 Hz, t = 1 min 内部绝缘 Internalisolation 基本绝缘(class1,IEC61140) basicinsulation(class1,IEC61140)   Al2O3  爬电距离 Creepagedistance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal   18,5 12,6  mm 电气间隙 Clearance 端子-散热片/terminaltoheatsink 端子-端子/terminaltoterminal   16,0 10,0  mm 相对电痕指数 Comperativetrackingindex  CTI  > 200  VISOL   kV 2,5   min. typ. max. LsCE  20  nH RCC'+EE'  1,10  mΩ Tstg -40  125 °C 螺丝M5根据相应的应用手册进行安装 ScrewM5-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm 端子联接扭距 Terminalconnectiontorque 螺丝M6根据相应的应用手册进行安装 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 - 6,0 Nm 重量 Weight  G  924  g preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 杂散电感,模块 Strayinductancemodule  模块引线电阻,端子-芯片 Moduleleadresistance,terminals-chip TC=25°C,每个开关/perswitch 储存温度 Storagetemperature  模块安装的安装扭距 Mountingtorqueformodulmounting 4 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 输出特性IGBT,逆变器(典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V 输出特性IGBT,逆变器(典型) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150°C 600 600 500 500 400 400 IC [A] IC [A] Tvj = 25°C Tvj = 125°C Tvj = 150°C 300 300 200 200 100 100 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 0 3,5 传输特性IGBT,逆变器(典型) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 开关损耗IGBT,逆变器(典型) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=±15V,RGon=0.75Ω,RGoff=0.75Ω,VCE=600V 600 100 Tvj = 25°C Tvj = 125°C Tvj = 150°C Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 90 500 80 70 400 E [mJ] IC [A] 60 300 50 40 200 30 20 100 10 0 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 5 0 100 200 300 IC [A] 400 500 600 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 开关损耗IGBT,逆变器(典型) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=±15V,IC=300A,VCE=600V 瞬态热阻抗IGBT,逆变器 transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 100 1 Eon, Tvj = 125°C Eon, Tvj = 150°C Eoff, Tvj = 125°C Eoff, Tvj = 150°C 90 80 ZthJC : IGBT 70 0,1 ZthJC [K/W] E [mJ] 60 50 40 0,01 30 20 i: 1 2 3 4 ri[K/W]: 0,0057 0,0072 0,0653 0,013 τi[s]: 0,0004 0,0069 0,0388 0,8257 10 0 0 1 2 3 4 RG [Ω] 5 6 7 0,001 0,001 8 反偏安全工作区IGBT,逆变器(RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=±15V,RGoff=0.75Ω,Tvj=150°C 0,01 0,1 t [s] 1 10 正向偏压特性二极管,逆变器(典型) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 700 600 IC, Modul IC, Chip Tvj = 25°C Tvj = 125°C Tvj = 150°C 600 500 500 400 IF [A] IC [A] 400 300 300 200 200 100 100 0 0 200 400 600 800 VCE [V] 1000 1200 0 1400 preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 6 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 VF [V] 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 开关损耗二极管,逆变器(典型) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=0.75Ω,VCE=600V 开关损耗二极管,逆变器(典型) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=300A,VCE=600V 35 30 Erec, Tvj = 125°C Erec, Tvj = 150°C Erec, Tvj = 125°C Erec, Tvj = 150°C 30 25 25 20 E [mJ] E [mJ] 20 15 15 10 10 5 5 0 0 100 200 300 IF [A] 400 500 0 600 瞬态热阻抗二极管,逆变器 transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 1 2 3 4 RG [Ω] 5 6 7 8 140 160 负温度系数热敏电阻温度特性 NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 1 100000 ZthJC : Diode Rtyp 10000 R[Ω] ZthJC [K/W] 0,1 0,01 1000 i: 1 2 3 4 ri[K/W]: 0,0114 0,0188 0,0936 0,0171 τi[s]: 0,0004 0,0079 0,039 0,8355 0,001 0,001 0,01 0,1 t [s] 1 100 10 preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 7 0 20 40 60 80 100 TC [°C] 120 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 接线图/circuit_diagram_headline J 封装尺寸/packageoutlines preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 8 技术信息/TechnicalInformation IGBT-模块 IGBT-modules FS300R12OE4 使用条件和条款  使用条件和条款 产品规格书中的数据是专门为技术人员提供的,您和您的技术部门应该针对您的应用来评估产品及产品的所有参数是否适合 产品规格书中所描述的产品特性是被保证的,任何这种保证严格依照供货协议中所涉及的条件和条款。除此之外,产品和产品的特性没有任何的保证 请注意安装及应用指南中的信息。 如果您有超出规格书所提供的产品信息的要求或者对我们的产品针对的特殊应用有疑虑的话,请联系我们负责你的销售部门(详情查询 www.infineon.com)。对那些特别感兴趣的问题我们将提供相应的应用手册 由于技术需要,我们的产品可能含有危险物质。如果需要查询类似问题请联系我们负责你的销售部门 如果您想将我们的产品用于航天,健康,危及生命或者生命维持等应用,请申明。 请注意,对这类应用我们强烈建议 -执行联合的风险和质量评估 -得到质量协议的结论 -建立联合的测试和出厂产品检查,我们可以根据测试的实际情况供货 如果有必要,请根据实际需要将类似的说明给你的客户 保留产品规格书的修改权 Terms&Conditionsofusage  Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. Thisproductdatasheetisdescribingthecharacteristicsofthisproductforwhichawarrantyisgranted.Anysuchwarrantyisgranted exclusivelypursuantthetermsandconditionsofthesupplyagreement.Therewillbenoguaranteeofanykindfortheproductandits characteristics.Theinformationinthevalidapplication-andassemblynotesofthemodulemustbeconsidered. Shouldyourequireproductinformationinexcessofthedatagiveninthisproductdatasheetorwhichconcernsthespecificapplicationof ourproduct,pleasecontactthesalesoffice,whichisresponsibleforyou(seewww.infineon.com).Forthosethatarespecifically interestedwemayprovideapplicationnotes. Duetotechnicalrequirementsourproductmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactthe salesoffice,whichisresponsibleforyou. ShouldyouintendtousetheProductinaviationapplications,inhealthorliveendangeringorlifesupportapplications,pleasenotify.Please note,thatforanysuchapplicationsweurgentlyrecommend -toperformjointRiskandQualityAssessments; -theconclusionofQualityAgreements; -toestablishjointmeasuresofanongoingproductsurvey,andthatwemaymakedeliverydependedon therealizationofanysuchmeasures. Ifandtotheextentnecessary,pleaseforwardequivalentnoticestoyourcustomers. Changesofthisproductdatasheetarereserved. preparedby:CU dateofpublication:2013-11-05 approvedby:WR revision:3.1 9
FS300R12OE4BOSA1 价格&库存

很抱歉,暂时无法提供与“FS300R12OE4BOSA1”相匹配的价格&库存,您可以联系我们找货

免费人工找货