HybridPACK™DriveModule
FS380R12A6T4LB
FinalDataSheet
V3.0,2020-03-23
AutomotiveHighPower
FS380R12A6T4LB
HybridPACK™DriveModule
1Features/Description
HybridPACK™DrivemodulewithTrench/FieldstopIGBT4andEmitterControlled4diode
T
T
T
VCES = 1200 V
IC = 380 A
Typical Applications
•Automotive Applications
•Hybrid Electrical Vehicles (H)EV
•Motor Drives
•Commercial Agriculture Vehicles
Description
The HybridPACKTM Drive is a very compact
six-pack module (1200V/380A) optimized for hybrid
and electric vehicles. The power module
implements the IGBT4 generation. The chipset has
high short circuit ruggedness and come with a
matching efficient and soft switching Emcon4 diode.
Electrical Features
•Blocking voltage 1200V
•Low VCEsat
•Low Switching Losses
•Low Qg and Crss
•Low Inductive Design
•Tvj op = 150°C
The new HybridPACKTM Drive power module family
comes with mechanical guiding elements
supporting easy assembly processes for customers.
Furthermore, the press-fit pins for the signal
terminals avoid additional time consuming selective
solder processes, which provides cost savings on
system level and increases system reliability. The
direct cooled baseplate with PinFin structure and
optimized ceramic material in the
FS380R12A6T4LB product best utilizes the
implemented chipset and shows superior thermal
characteristics. Due to the high clearance &
creepage distances, the module well suited for
increased system working voltages and supports
modular inverter approaches.
Mechanical Features
•4.2kV DC 1sec Insulation
•High Creepage and Clearance Distances
•High Power Density
•High Performance Si3N4 Ceramic
•Direct Cooled PinFin Base Plate
•Guiding elements for PCB and cooler assembly
•Integrated NTC temperature sensor
•PressFIT Contact Technology
•RoHS compliant
•UL 94 V0 module frame
Product Name
Ordering Code
FS380R12A6T4LB
SP002516834
Final Data Sheet
2
V3.0,2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
2
IGBT,Inverter
2.1
Maximum Rated Values
Parameter
Conditions
Symbol
Value
Unit
Collector-emitter voltage
Tvj = 25°C
VCES
12001)
V
ICN
380
A
Continuous DC collector current
TF = 100°C, Tvj max = 175°C
IC nom
2502)
A
Repetitive peak collector current
tP = 1 ms
ICRM
760
A
Total power dissipation
TF = 75°C, Tvj max = 175°C
Ptot
8702)
W
VGES
+/-20
V
Implemented collector current
Gate-emitter peak voltage
2.2
Characteristic Values
Collector-emitter saturation voltage
min.
IC = 250 A, VGE = 15 V
IC = 250 A, VGE = 15 V
IC = 250 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
typ.
max.
1.60
1.85
1.90
1.95
V
IC = 380 A, VGE = 15 V
IC = 380 A, VGE = 15 V
Tvj = 25°C
Tvj = 150°C
Gate threshold voltage
IC = 9.75 mA, VCE = VGE
Tvj = 25°C
VGEth
Gate charge
VGE = -8 V ... 15 V, VCE = 600V
QG
1.75
µC
Tvj = 25°C
RGint
2.5
Ω
Internal gate resistor
1,95
2,40
5.20
5.80
6.40
V
Input capacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cies
19.0
nF
Reverse transfer capacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cres
0.81
nF
Collector-emitter cut-off current
VCE = 1200 V, VGE = 0 V
Tvj = 25°C
ICES
1.0
mA
Gate-emitter leakage current
VCE = 0 V, VGE = 20 V
Tvj = 25°C
IGES
400
nA
Turn-on delay time, inductive load
IC = 250 A, VCE = 600 V
VGE = -8 / +15 V
RGon = 2.2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
td on
0.13
0.14
0.14
µs
IC = 250 A, VCE = 600 V
VGE = -8 / +15 V
RGon = 2.2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
tr
0.05
0.05
0.05
µs
IC = 250 A, VCE = 600 V
VGE = -8 / +15 V
RGoff = 2.2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
td off
0.47
0.57
0.60
µs
IC = 250 A, VCE = 600 V
VGE = -8 / +15 V
RGoff = 2.2 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
tf
0.10
0.20
0.22
µs
IC = 250 A, VCE = 600 V, LS = 20 nH
VGE = -8 / +15 V
RGon = 2.2 Ω
di/dt (Tvj 25°C) = 4000 A/µs
di/dt (Tvj 150°C) = 3800 A/µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IC = 250 A, VCE = 600 V, LS = 20 nH
VGE = -8 / +15 V
RGoff = 2.2 Ω
dv/dt (Tvj 25°C) = 3300 V/µs
dv/dt (Tvj 150°C) = 3000 V/µs
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Rise time, inductive load
Turn-off delay time, inductive load
Fall time, inductive load
Turn-on energy loss per pulse
Turn-off energy loss per pulse
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
Eon
19.0
26.5
29.0
mJ
Eoff
18.5
28.0
31.0
mJ
SC data
VGE ≤ 15 V, VCC = 800 V
VCEmax = VCES -LsCE ·di/dt
Thermal resistance, junction to cooling fluid
per IGBT; ∆V/∆t = 10 dm³/min, TF = 75°C
RthJF
Temperature under switching conditions
top continuous
Tvj op
1500
1200
ISC
A
3)
0.100 0.115
-40
150
3)
K/W
°C
1)
For applications with applied blocking voltage > 60% of the specified maximum collector-emitter voltage, we recommend to evaluate the impact of the
cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office.
2)
Verified by characterization / design not by test.
3)
Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
Final Data Sheet
3
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
3
Diode, Inverter
3.1
Maximum Rated Values
Parameter
Conditions
Symbol
Value
Unit
Repetitive peak reverse voltage
Tvj = 25°C
VRRM
12001)
V
Implemented forward current
IFN
380
A
Continuous DC forward current
IF
2502)
A
Repetitive peak forward current
tP = 1 ms
I²t - value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
3.2
IFRM
760
A
I²t
10000
8800
A²s
A²s
Characteristic Values
Forward voltage
Peak reverse recovery current
Recovered charge
Reverse recovery energy
min.
max.
2.00
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IF = 380 A, VGE = 0 V
IF = 380 A, VGE = 0 V
Tvj = 25°C
Tvj = 150°C
IF = 250 A, - diF/dt = 3800 A/µs (Tvj = 150°C)
VR = 600 V
VGE = -8 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
245
300
315
A
IF = 250 A, - diF/dt = 3800 A/µs (Tvj = 150°C)
VR = 600 V
VGE = -8 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
24.0
42.5
48.0
µC
IF = 250 A, - diF/dt = 3800 A/µs (Tvj = 150°C)
VR = 600 V
VGE = -8 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
10.0
17.5
19.5
mJ
VF
V
1,85
1,80
Thermal resistance, junction to cooling fluid
per diode; ∆V/∆t = 10 dm³/min, TF = 75°C
RthJF
Temperature under switching conditions
top continuous
Tvj op
4
typ.
1.60
1.55
1.55
IF = 250 A, VGE = 0 V
IF = 250 A, VGE = 0 V
IF = 250 A, VGE = 0 V
NTC-Thermistor
0.1403) 0.1603) K/W
-40
min.
150
typ.
°C
max.
Parameter
Conditions
Symbol
Value
Unit
Rated resistance
TC = 25°C
R25
5.00
kΩ
Deviation of R100
TC = 100°C, R100 = 493 Ω
Power dissipation
TC = 25°C
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B25/50
3375
K
B-value
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
B-value
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
∆R/R
-5
P25
5
%
20.0
mW
Specification according to the valid application note.
1)
For applications with applied blocking voltage > 60% of the specified maximum collector-emitter voltage, we recommend to evaluate the impact of the
cosmic radiation effect in early design phase. For assessment please contact local Infineon sales office.
2)
Verified by characterization / design not by test.
3)
Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
Final Data Sheet
4
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FS380R12A6T4LB
HybridPACK™ Drive Module
5
Module
Parameter
Conditions
Symbol
Value
Unit
Isolation test voltage
RMS, f = 0 Hz, t = 1 sec
VISOL
4.2
kV
Maximum RMS module terminal current
TF = 75°C, TCt = 105°C
ItRMS
500
A
Cu+Ni1)
Material of module baseplate
Si3N4
Internal isolation
basic insulation (class 1, IEC 61140)
Creepage distance
terminal to heatsink
terminal to terminal
dCreep
9.0
9.0
mm
Clearance
terminal to heatsink
terminal to terminal
dClear
4.5
4.5
mm
CTI
Comperative tracking index
min.
Pressure drop in cooling circuit
Maximum pressure in cooling circuit
∆V/∆t = 10.0 dm³/min; TF = 75°C
Tbaseplate < 40°C
Tbaseplate > 40°C
(relative pressure)
Tstg
Screw M4 baseplate to heatsink
1)
2)
3)
M
nH
0.75
-40
1.80
G
Weight
bar
8.0
RCC'+EE'
TF = 25 °C, per switch
mbar
2.5
2.0
LsCE
Storage temperature
Mounting torque for modul mounting
642)
p
Stray inductance module
Module lead resistance, terminals - chip
∆p
> 200
typ. max.
mΩ
125
2.00 2.20
720
3)
°C
Nm
g
Ni plated Cu baseplate.
Cooler design and flow direction according to application note AN-HPDPERF-ASSEMBLY. Cooling fluid 50% water / 50% ethylenglycol.
According to application note AN-HPDPERF-ASSEMBLY.
Final Data Sheet
5
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
6
Characteristics Diagrams
output characteristic IGBT,Inverter (typical)
IC = f (VCE)
VGE = 15 V
output characteristic IGBT,Inverter (typical)
IC = f (VCE)
Tvj = 150°C
600
600
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
550
500
500
450
450
400
400
350
350
IC [A]
IC [A]
550
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0,0
0,5
1,0
1,5
2,0
VCE [V]
2,5
3,0
3,5
transfer characteristic IGBT,Inverter (typical)
IC = f (VGE)
VCE = 20 V
0,0
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
switching losses IGBT,Inverter (typical)
Eon = f (IC), Eoff = f (IC),
VGE = +15 V / -8 V, RGon = 2.2 Ω, RGoff = 2.2 Ω, VCE = 600 V
600
180
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
550
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
160
500
140
450
400
120
E [mJ]
350
IC [A]
0,5
300
250
200
100
80
60
150
40
100
20
50
0
0
5
Final Data Sheet
6
7
8
9
VGE [V]
10
11
12
13
0
6
100
200
300
IC [A]
400
500
600
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
switching losses IGBT,Inverter (typical)
Eon = f (RG), Eoff = f (RG),
VGE = +15V / -8V, IC = 250 A, VCE = 600V
transient thermal impedance IGBT,Inverter
ZthJF = f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol
Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY
120
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
110
100
ZthJF : IGBT
90
80
0,1
ZthJF [K/W]
E [mJ]
70
60
50
40
0,01
30
20
i:
1
2
3
4
ri[K/W]: 0,007 0,038 0,05 0,02
τi[s]:
0,001 0,03 0,25 1,5
10
0
0
2
4
6
8
10 12
RG [Ω]
14
16
18
20
0,001
0,001
22
reverse bias safe operating area IGBT,Inverter (RBSOA)
IC = f (VCE);
VGE = +15V / -8V, RGoff = 2.2 Ω, Tvj = 150°C
0,01
0,1
t [s]
1
10
thermal impedance IGBT,Inverter
RthJF = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol
cooler design according to AN-HPDPERF-ASSEMBLY
800
0,129
RthJF: IGBT
0,127
700
0,125
600
0,123
0,121
RthJF [K/W]
IC [A]
500
400
0,119
0,117
300
0,115
200
0,113
IC, Modul
IC, Chip
100
0,111
0
0,109
0
Final Data Sheet
200
400
600
800
VCE [V]
1000
1200
1400
4
7
5
6
7
8
9
10
∆V/∆t [dm³/min]
11
12
13
14
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
forward characteristic of Diode, Inverter (typical)
IF = f (VF)
switching losses Diode, Inverter (typical)
Erec = f (IF),
RGon = 2.2 Ω, VCE = 600 V
600
30,0
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
550
Erec, Tvj = 125°C
Erec, Tvj = 150°C
27,0
500
24,0
450
21,0
400
18,0
E [mJ]
IF [A]
350
300
250
15,0
12,0
200
9,0
150
6,0
100
3,0
50
0
0,0
0,0
0,3
0,6
0,9
1,2
VF [V]
1,5
1,8
2,1
2,4
switching losses Diode, Inverter (typical)
Erec = f (RG),
IF = 250 A, VCE = 600 V
0
100
200
300
IF [A]
400
500
600
transient thermal impedance Diode, Inverter
ZthJF = f (t), ∆V/∆t = 10 dm³/min; 50% water / 50% ethylenglycol
Tf = 75°C; cooler design according to AN-HPDPERF-ASSEMBLY
24
1
Erec, Tvj = 125°C
Erec, Tvj = 150°C
22
ZthJC : Diode
20
18
16
0,1
ZthJC [K/W]
E [mJ]
14
12
10
8
0,01
6
4
i:
1
2
3
4
ri[K/W]: 0,015 0,07 0,055 0,02
τi[s]:
0,001 0,03 0,25 1,5
2
0
0
Final Data Sheet
2
4
6
8
10 12
RG [Ω]
14
16
18
20
0,001
0,001
22
8
0,01
0,1
t [s]
1
10
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
thermal impedance Diode, Inverter
RthJF = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol
cooler design according to AN-HPDPERF-ASSEMBLY
NTC-Thermistor-temperature characteristic (typical)
R = f (T)
0,174
100000
RthJF: Diode
Rtyp
0,172
0,170
10000
0,166
R[Ω]
RthJF [K/W]
0,168
0,164
0,162
1000
0,160
0,158
0,156
4
5
6
7
8
9
10
∆V/∆t [dm³/min]
11
12
13
14
13
14
100
-40
-20
0
20
40
60
80
TC [°C]
100 120 140 160
pressure drop in cooling circuit
∆p = f (∆V/∆t), Tf = 75°C; 50% water / 50% ethylenglycol
cooler design according to AN-HPDPERF-ASSEMBLY
120
∆p: Modul
100
∆p [mbar]
80
60
40
20
0
4
Final Data Sheet
5
6
7
8
9
10
∆V/∆t [dm³/min]
11
12
9
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FS380R12A6T4LB
HybridPACK™ Drive Module
7
Circuit diagram
P1
P2
P3
T1
C1
C3
C5
T
T2
G1
G3
G5
E1
E3
E5
U
C2
T3
V
C4
W
T
C6
T4
G2
G4
G6
E2
E4
E6
T5
T
T6
N1
Final Data Sheet
N2
N3
10
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FS380R12A6T4LB
HybridPACK™ Drive Module
Y
X
122
127±0,4
128,25±0,4
107,3
88,3
74,67
60,3
16±0,2
N2
P1
6x
6x
P2
N3
j
P3
E6 G6
( 11
9 ,5
T1
T2
G1 E1
66,5±0,5
53 T3
)
82
87±0,4
90,75±0,4
G3 E3
n5,5±0,1
3x
14±0,2
H
j
I
0,6 H I
A
1,2 D E
3x(U;V;W)
125,25
122
102,3
(87)
74,65
81,8
27,35
34,8
0
4
8,05
12,2
23,25
B
98
102,05
74,67
27,33
55,3
3x
0
8,3
20
0
C
E
3x
114,25
120,25±0,4
S
0
8x
12,8±0,2
W
V
3x
reference
plane 22.000
7,6±0,4
C5
82
U
1±0,15
X-Y ( 1 : 1 )
8x
9,3±0,2
D2
L
Y
D1
0
8
A
c 0,3 CZ
6x common zones
D1-D2
D2-D3
D3-D4
D8-D7
D7-D6
D6-D5
T6
G5 E5
C3
32±0,2
C
T5
T4
C1
A
DE
BC
4,3±0,15
60
-0,2
6,35±0,5
A
(43,
3 05
°)
C6
n1,6
8x
E4 G4
C4
n0,5
8x
0
E2 G2
C2
4±0,3
6x(N1-N3;P1-P3)
G
n5,5±0,1
D
15,5±0,5
N1
D3
N2
P1
P2
D4
N3
P3
8x
n0,8 L M
A
j
n1,6 B C
M
X
18,85
dimensioned for
EJOT Delta PT
WN5451 30 x
C2
E2 G2
J
C4
E4 G4
C6
E6 G6
axis generated by
K origin
C2;E2;G2;C4;E4;G4;C6;E6;G6
Z
R
j
n **
n **
T6
G3 E3
A
10,25
6,2
0
KJ
BC
G5 E5
C3
D7
21,95
23,35
27,35
36,75
40,8
U
23,25
Drawing: W00170332_00
general toler
surface
1. DIN
DIN EN ISO
DIN ISO 13715 16742-TG4
1302
2. DIN ISO
2768-mK
All dimensions refer to module in
delivery condition
Z ( 1,5 : 1 )
edges
T5
C1
D8
(19,75)
T3
T4
V
T
C5
D6
W
D5
C
115,95
117,35
125,25
G1 E1
T1
T2
68,95
70,35
74,65
83,75
87
87,8
51,85
59,35
67,15
69,85
74,1
82
3,94±0,5
refers
to lokal CZ
Areas R,S or T
Final Data Sheet
41,3
27,33
13,3
5,7
0
N1
6x
n0,6 F G
A
n1,2 D E
n4,5±0,15
8,5±0,3
B
j
14±0,2
D
22,25±0,4
16,25
9,75±0,4
5±0,4
0
1±0,15
0
26,25±0,4
25±0,4
20
F
Ø5,3±0,15{
B
51
55,05
6x
10,1±0,4
7,6±0,4
0
Package outlines
26±0,3
8
24x
C2
E2 G2
** Pin position
checked with pin gauge
according to Application
Note AN-HPD_ASSEMBLY
11
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
9
Label Codes
9.1
Module Code
Code Format
Data Matrix
Encoding
ASCII Text
Symbol Size
16x16
Standard
IEC24720 and IEC16022
Code Content
Content
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
Digit
1-5
6 - 11
12 - 19
20 - 21
22 - 23
Example (below)
71549
142846
55054991
15
30
Example
71549142846550549911530
9.2
Packing Code
Code Format
Code128
Encoding
Code Set A
Symbol Size
34 digits
Standard
IEC8859-1
Code Content
Content
Backend Construction Number
Production Lot Number
Serial Number
Date Code
Box Quantity
Identifier
X
1T
S
9D
Q
Digit
2-9
12 - 19
21 - 25
28 - 31
33 - 34
Example (below)
95056609
2X0003E0
754389
1139
15
Example
X950566091T2X0003E0S754389D1139Q15
Final Data Sheet
12
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
Revision History
Major changes since previous revision
Revision History
Reference
Date
Description
V3.0
2020-03-23
Final datasheet
Final Data Sheet
13
V3.0, 2020-03-23
FS380R12A6T4LB
HybridPACK™ Drive Module
Terms & Conditions of usage
Edition 2018-08-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any
examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon
Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office
(http://www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the
nearest Infineon Technologies Office.
These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life
support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact
your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review
product requirements and reliability testing.
Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class
III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Trademarks
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™,
µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of
DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.
FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION
FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor
Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,
MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave
Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.
VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of
WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last update
Final Data Sheet
2011-11-11
14
V3.0, 2020-03-23
www.infineon.com
Published by Infineon Technologies AG
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