FS3L200R10W3S7FB94BPSA1

FS3L200R10W3S7F_B94 EasyPACK™ module EasyPACK™ module with TRENCHSTOP™ IGBT7 and CoolSiC™ Schottky diode and PressFIT / NTC Features • Electrical features - VCES = 950 V - IC nom = 100 A / ICRM = 200 A - CoolSiCTM Schottky diode gen 5 - Low switching losses - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Compact design - Integrated NTC temperature sensor - PressFIT contact technology Potential applications • UPS systems • Three-level applications • Solar applications Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Boost . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Bypass-diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 Inverse-polarity protection diode A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 6 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 7 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 9 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 10 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 Datasheet 2 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min Values Unit 3.2 kV basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 11.2 mm Creepage distance dCreep terminal to terminal 6.8 mm Clearance dClear terminal to heatsink 9.4 mm Clearance dClear terminal to terminal 5.5 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >400 housing Symbol Note or test condition Min. Stray inductance module LsCE Storage temperature Tstg Mounting torque for module mounting M Weight G 2 Table 3 Values Unit Typ. Max. 22 - Mounting according to M5, Screw valid application note nH -40 125 °C 1.3 1.5 Nm 78 g Values Unit 950 V 100 A 70 A 200 A ±20 V The current under continuous operation is limited to 25A rms per connector pin. IGBT, Boost Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Implemented collector current ICN Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tp limited by Tvj op Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 Tvj = 25 °C TH = 65 °C 3 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 2 IGBT, Boost Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 30 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.33 1.53 V Tvj = 125 °C 1.39 Tvj = 150 °C 1.40 5.85 V IC = 1.67 mA, VCE = VGE, Tvj = 25 °C 4.35 5.10 VGE = ±15 V, VCE = 600 V 0.23 µC Internal gate resistor RGint Tvj = 25 °C 1.5 Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 6.48 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.02 nF Collector-emitter cut-off current ICES VCE = 950 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 30 A, VCE = 500 V, VGE = ±15 V, RGon = 10 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse Thermal resistance, junction to heat sink tr tdoff tf Eon Eoff RthJH Tvj = 25 °C Tvj = 25 °C 0.060 Tvj = 125 °C 0.060 Tvj = 150 °C 0.060 Tvj = 25 °C 0.020 Tvj = 125 °C 0.020 Tvj = 150 °C 0.020 Tvj = 25 °C 0.180 Tvj = 125 °C 0.220 Tvj = 150 °C 0.240 Tvj = 25 °C 0.080 Tvj = 125 °C 0.120 Tvj = 150 °C 0.130 IC = 30 A, VCE = 500 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGon = 10 Ω, di/dt = 1900 vj Tvj = 150 °C A/µs (Tvj = 150 °C) 0.525 IC = 30 A, VCE = 500 V, Tvj = 25 °C Lσ = 35 nH, VGE = ±15 V, T = 125 °C RGoff = 10 Ω, dv/dt = 3500 vj Tvj = 150 °C V/µs (Tvj = 150 °C) 0.72 per IGBT, λgrease= 3.3 W/(m*K) 0.667 IC = 30 A, VCE = 500 V, VGE = ±15 V, RGon = 10 Ω IC = 30 A, VCE = 500 V, VGE = ±15 V, RGoff = 10 Ω IC = 30 A, VCE = 500 V, VGE = ±15 V, RGoff = 10 Ω 0.031 mA 100 nA µs µs µs µs mJ 0.557 0.567 mJ 1.21 1.37 K/W (table continues...) Datasheet 4 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 3 Diode, Boost Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 3 Tvj op Typ. -40 Unit Max. 150 °C Diode, Boost Table 5 Maximum rated values Parameter Symbol Note or test condition Unit 1200 V Repetitive peak reverse voltage VRRM Implemented forward current IFN 40 A Continuous DC forward current IF 30 A Repetitive peak forward current IFRM 80 A Tvj = 125 °C 200 A²s Tvj = 150 °C 111 I2t - value Table 6 I2t Tvj = 25 °C Values tP = 1 ms VR = 0 V, tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy Thermal resistance, junction to heat sink VF IRM Qr Erec RthJH IF = 30 A, VGE = 0 V IF = 30 A, VR = 500 V, -diF/dt = 1900 A/µs (Tvj = 150 °C) IF = 30 A, VR = 500 V, -diF/dt = 1900 A/µs (Tvj = 150 °C) IF = 30 A, VR = 500 V, -diF/dt = 1900 A/µs (Tvj = 150 °C) Unit Typ. Max. Tvj = 25 °C 1.29 1.63 Tvj = 125 °C 1.49 Tvj = 150 °C 1.61 Tvj = 25 °C 16.4 Tvj = 125 °C 16.4 Tvj = 150 °C 16.4 Tvj = 25 °C 0.74 Tvj = 125 °C 0.74 Tvj = 150 °C 0.74 Tvj = 25 °C 0.249 Tvj = 125 °C 0.249 Tvj = 150 °C 0.249 per diode, λgrease= 3.3 W/(m*K) 0.979 V A µC mJ K/W (table continues...) Datasheet 5 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 4 Bypass-diode Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Temperature under switching conditions 4 Tvj op Typ. -40 Unit Max. 150 °C Bypass-diode Table 7 Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 95 °C 50 A Maximum RMS current at rectifier output IRMSM TH = 95 °C 50 A IFSM tP = 10 ms Tvj = 25 °C 1070 A Tvj = 110 °C 957 Tvj = 25 °C 5770 Tvj = 110 °C 4580 Surge forward current I2t - value I2t Table 8 tP = 10 ms Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 45 A Reverse current Ir Tvj = 150 °C, VR = 1200 V Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj, op 5 Table 9 A²s Tvj = 110 °C per diode, λgrease= 3.3 W/(m*K) Typ. Unit Max. 0.88 V 1 mA 0.549 K/W -40 110 °C Inverse-polarity protection diode A Maximum rated values Parameter Symbol Note or test condition Values Unit Repetitive peak reverse voltage VRRM Tvj = 25 °C 1200 V Maximum RMS forward current per chip IFRMSM TH = 95 °C 50 A (table continues...) Datasheet 6 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 6 NTC-Thermistor Table 9 (continued) Maximum rated values Parameter Symbol Note or test condition Maximum RMS current at rectifier output Surge forward current I2t - value IRMSM TH = 95 °C IFSM tP = 10 ms I2t Table 10 tP = 10 ms Values Unit 50 A Tvj = 125 °C 395 A Tvj = 150 °C 378 Tvj = 125 °C 780 Tvj = 150 °C 714 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage VF IF = 30 A Reverse current Ir Tvj = 150 °C, VR = 1200 V Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj, op 6 A²s Tvj = 150 °C per diode, λgrease= 3.3 W/(m*K) Typ. Unit Max. 0.88 V 0.1 mA 0.934 K/W -40 150 °C NTC-Thermistor Table 11 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 7 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 7 Characteristics diagrams 7 Characteristics diagrams Output characteristic (typical), IGBT, Boost IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Boost IC = f(VCE) Tvj = 150 °C 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 0.0 Transfer characteristic (typical), IGBT, Boost IC = f(VGE) VCE = 20 V 0.5 1.0 1.5 2.0 2.5 Switching losses (typical), IGBT, Boost E = f(IC) RGoff = 10 Ω, RGon = 10 Ω, VCE = 500 V, VGE = ± 15 V 60 2.5 50 2.0 40 1.5 30 1.0 20 0.5 10 0 0.0 4 Datasheet 5 6 7 8 0 8 5 10 15 20 25 30 35 40 45 50 55 60 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 7 Characteristics diagrams Switching losses (typical), IGBT, Boost E = f(RG) IC = 30 A, VCE = 500 V, VGE = ± 15 V Switching times (typical), IGBT, Boost t = f(IC) RGoff = 10 Ω, RGon = 10 Ω, VCE = 500 V, VGE = ± 15 V, Tvj = 150 °C 3.5 10 3.0 1 2.5 2.0 0.1 1.5 1.0 0.01 0.5 0.0 0.001 0 10 20 30 40 50 60 70 80 90 100 0 Switching times (typical), IGBT, Boost t = f(RG) IC = 30 A, VCE = 500 V, VGE = ± 15 V, Tvj = 150 °C 10 1 1 0.1 0.1 0.01 0.01 0.001 Datasheet 10 20 30 40 50 60 70 80 10 15 20 25 30 35 40 45 50 55 60 Transient thermal impedance , IGBT, Boost Zth = f(t) 10 0 5 90 0.001 0.001 100 9 0.01 0.1 1 10 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 7 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Boost Capacity characteristic (typical), IGBT, Boost IC = f(VCE) C = f(VCE) RGoff = 10 Ω, VGE = ±15.0 V, Tvj = 150 °C f = 100 kHz, VGE = 0 V, Tvj = 25 °C 240 100 220 200 180 10 160 140 120 1 100 80 60 0.1 40 20 0 0.01 0 100 200 300 400 500 600 700 800 900 1000 0 Gate charge characteristic (typical), IGBT, Boost VGE = f(QG) IC = 100 A, Tvj = 25 °C Datasheet 20 30 40 50 60 70 80 90 100 Forward characteristic (typical), Diode, Boost IF = f(VF) 15 60 10 50 5 40 0 30 -5 20 -10 10 -15 0.00 10 0 0.05 0.10 0.15 0.20 0.25 0.0 10 0.5 1.0 1.5 2.0 2.5 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 7 Characteristics diagrams Switching losses (typical), Diode, Boost Erec = f(IF) RGon = 10 Ω, VCE = 500 V Switching losses (typical), Diode, Boost Erec = f(RG) VCE = 500 V, IF = 30 A 0.50 0.50 0.45 0.45 0.40 0.40 0.35 0.35 0.30 0.30 0.25 0.25 0.20 0.20 0.15 0.15 0.10 0.10 0.05 0.05 0.00 0.00 0 5 10 15 20 25 30 35 40 45 50 55 60 0 Transient thermal impedance, Diode, Boost Zth = f(t) 10 20 30 40 50 60 70 80 90 100 Forward characteristic (typical), Bypass-diode IF = f(VF) 10 90 75 60 1 45 30 0.1 15 0.01 0.001 Datasheet 0 0.01 0.1 1 0.0 10 11 0.2 0.4 0.6 0.8 1.0 1.2 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 7 Characteristics diagrams Transient thermal impedance, Bypass-diode Zth = f(t) Forward characteristic (typical), Inverse-polarity protection diode A IF = f(VF) 10 60 50 1 40 30 0.1 20 0.01 10 0.001 0.001 0 0.01 0.1 1 0.0 10 Transient thermal impedance, Inverse-polarity protection diode A Zth = f(t) Datasheet 0.4 0.6 0.8 1.0 1.2 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 10 100000 1 10000 0.1 1000 0.01 0.001 0.2 100 0.01 0.1 1 0 10 12 25 50 75 100 125 150 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 8 Circuit diagram 8 Circuit diagram Figure 1 Datasheet 13 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 9 Package outlines Package outlines B dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness 4x ,2) ( 4 0,25 A B C ( 2,3) Dome pcb hole pattern 3,5 4x 4x 26 DC1+ 62 0,45 5,4 0,1 2x 14 17,6 14,4 11,2 8 4,8 0 0,25 A B C 0 DC1- DC2- DC2N DC2+ EC2 PVA+ GA2 EA2 GC2 PVC+ BSTC- BSTABSTA+ 4,8 8 11,2 EC1 EA1 GA1 NTC1 EB1 GB1 NTC2 GC1 PVC- 2x 14 DC1N 24 2x 12 according to screw head washer 9 20,8 24 26 BSTBPVB+ PVA- PVB- GB2 BSTC+ EB2 ) 3,4 29,68 32,88 36,08 0 4,08 7,28 10,48 13,68 16,88 20,08 23,28 23,28 20,08 16,88 13,68 10,48 7,28 4,08 C 36,08 32,88 29,68 109,9 0,45 44,4 47,4 49,7 0 49,7 47,4 44,4 ( BSTB+ (16,4) (12) 12,2 0,1 A recommended design hight Figure 2 pin grid 3,2mm 0,1 if not specified otherwise tolerance of pcb hole pattern hole specification for contacts: see AN 2009-01 diameters of drill: 1,15mm copper thickness in hole: 25-50 m Datasheet 14 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module 10 Module label code 10 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 15 Revision 1.00 2022-02-16 FS3L200R10W3S7F_B94 EasyPACK™ module Revision history Revision history Document revision Date of release 0.10 2020-12-15 1.00 2022-02-16 Datasheet Description of changes Final datasheet 16 Revision 1.00 2022-02-16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-02-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAK566-002 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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