HybridPACK™1Module
FS400R07A1E3
FinalDataSheet
V3.4,2018-08-09
AutomotiveHighPower
FS400R07A1E3
HybridPACKª1Module
1Features/Description
HybridPACK™1modulewithTrench/FieldstopIGBT3andEmitterControlled3diodeandNTC
VCES = 650V
IC nom = 400A
TypicalApplications
• AutomotiveApplications
• HybridElectricalVehicles(H)EV
• CommercialAgricultureVehicles
• MotorDrives
• Optimized for automotive applications with DC link
voltagesupto420V
Description
Infineon®’s HybridPACKTM 1 is an automotive
qualified power module designed for electric vehicle
applications for a power range up to 20–30kW.
Designed for a 150°C junction operation
temperature, the module accommodates a 3-phase
Six-Pack configuration of Trench-Field-Stop IGBT3
and matching emitter controlled diodes.
The HybridPACKTM 1 power module is built on
Infineon’s long time experience in the development
of IGBT power modules, intense research efforts of
new material combinations and assembly
technologies. HybridPACKTM 1 is suitable for air or
liquid cooling. The copper base plate combined with
high-performance ceramic substrate and Infineon’s
enhanced wire-bonding process provides
unparalleled thermal and power cycling capability
and highest reliability for mild hybrid inverter or
generator applications. For a compact design the
driver stage PCB can easily be soldered on top of
the module. All power connections are realized with
screw terminals.
ElectricalFeatures
• LowSwitchingLosses
• LowVCEsat
• Tvjop=150°C
• VCEsatwithpositiveTemperatureCoefficient
MechanicalFeatures
• 2.5kVAC1minInsulation
• Al2O3SubstratewithLowThermalResistance
• Highmechanicalrobustness
• IntegratedNTCtemperaturesensor
• CopperBasePlate
• RoHScompliant
ProductName
OrderingCode
FS400R07A1E3
SP000663446
Final Data Sheet
2
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
2IGBT,Inverter
2.1MaximumRatedValues
Parameter
Conditions
Symbol
Value
Unit
Collector-emittervoltage
Tvj = 25°C
VCES
650
V
ContinuousDCcollectorcurrent
TC = 65°C, Tvj max = 175°C
TC = 25°C, Tvj max = 175°C
IC nom
IC
400
500
A
A
Repetitivepeakcollectorcurrent
tP = 1 ms
ICRM
800
A
Totalpowerdissipation
TC = 25°C, Tvj max = 175°C
Ptot
1250
W
VGES
+/-20
V
Gate-emitterpeakvoltage
2.2CharacteristicValues
Collector-emittersaturationvoltage
min.
typ.
max.
1.45
1.60
1.70
1.90
5.80
6.50
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
IC = 400 A, VGE = 15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
VCE sat
Gatethresholdvoltage
IC = 6.40 mA, VCE = VGE
Tvj = 25°C
VGEth
Gatecharge
VGE = -15 V ... 15 V
QG
4.30
µC
Tvj = 25°C
RGint
1.0
Ω
Internalgateresistor
4.90
V
V
Inputcapacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cies
26.0
nF
Reversetransfercapacitance
f = 1 MHz, VCE = 25 V, VGE = 0 V
Tvj = 25°C
Cres
0.76
nF
Collector-emittercut-offcurrent
VCE = 650 V, VGE = 0 V
Tvj = 25°C
ICES
1.0
mA
Gate-emitterleakagecurrent
VCE = 0 V, VGE = 20 V
Tvj = 25°C
IGES
400
nA
Turn-ondelaytime,inductiveload
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1.8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
td on
0.10
0.11
0.12
µs
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGon = 1.8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
tr
0.08
0.08
0.08
µs
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1.8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
td off
0.46
0.50
0.50
µs
IC = 400 A, VCE = 300 V
VGE = ±15 V
RGoff = 1.8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
tf
0.05
0.07
0.08
µs
IC = 400 A, VCE = 300 V, LS = 25 nH
VGE = ±15 V, di/dt = 5500 A/µs (Tvj = 150°C)
RGon = 1.8 Ω
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Eon
2.90
4.20
4.50
mJ
IC = 400 A, VCE = 300 V, LS = 25 nH
Tvj = 25°C
VGE = ±15 V, du/dt = 3000 V/µs (Tvj = 150°C) Tvj = 125°C
RGoff = 1.8 Ω
Tvj = 150°C
Eoff
13.0
16.0
17.0
mJ
SCdata
VGE ≤ 15 V, VCC = 360 V
VCEmax = VCES -LsCE ·di/dt
ISC
2800
2000
A
Thermalresistance,junctiontocase
perIGBT
RthJC
Thermalresistance,casetoheatsink
perIGBT
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
Temperatureunderswitchingconditions
top continuous
Tvj op
Risetime,inductiveload
Turn-offdelaytime,inductiveload
Falltime,inductiveload
Turn-onenergylossperpulse
Turn-offenergylossperpulse
Final Data Sheet
tP ≤ 8 µs, Tvj = 25°C
tP ≤ 6 µs, Tvj = 150°C
3
0.120 K/W
0.080
-40
K/W
150
°C
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
3Diode,Inverter
3.1MaximumRatedValues
Parameter
Conditions
Symbol
Value
Unit
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM
650
V
IF
400
A
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM
800
A
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
VR = 0 V, tP = 10 ms, Tvj = 150°C
I²t
8800
8500
A²s
A²s
ContinuousDCforwardcurrent
3.2CharacteristicValues
Forwardvoltage
Peakreverserecoverycurrent
Recoveredcharge
Reverserecoveryenergy
min.
typ.
max.
1.95
VF
1.55
1.50
1.45
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IRM
210
280
300
A
IF = 400 A, - diF/dt = 5500 A/µs (Tvj = 150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Qr
18.0
30.0
34.0
µC
IF = 400 A, - diF/dt = 5500 A/µs (Tvj = 150°C)
VR = 300 V
VGE = -15 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
Erec
3.60
7.25
8.30
mJ
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
IF = 400 A, VGE = 0 V
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
IF = 400 A, - diF/dt = 5500 A/µs (Tvj = 150°C)
VR = 300 V
VGE = -15 V
Thermalresistance,junctiontocase
perdiode
RthJC
Thermalresistance,casetoheatsink
perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH
Temperatureunderswitchingconditions
top continuous
Tvj op
4NTC-Thermistor
0.200 K/W
0.085
-40
min.
Parameter
Conditions
Ratedresistance
TC = 25°C
DeviationofR100
TC = 100°C, R100 = 493 Ω
Symbol
Powerdissipation
TC = 25°C
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-value
B-value
K/W
150
typ.
°C
max.
Value
R25
∆R/R
V
Unit
5.00
kΩ
5
P25
5
%
20.0
mW
B25/50
3375
K
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
Specificationaccordingtothevalidapplicationnote.
Final Data Sheet
4
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
5Module
Parameter
Conditions
Isolationtestvoltage
RMS, f = 50 Hz, t = 1 min.
Symbol
VISOL
Materialofmodulebaseplate
Value
Unit
2.5
kV
Cu
Al2O3
Internalisolation
basicinsulation(class1,IEC61140)
Creepagedistance
terminaltoheatsink
terminaltoterminal
dCreep
12.0
6.1
mm
Clearance
terminaltoheatsink
terminaltoterminal
dClear
12.0
6.1
mm
CTI
Comperativetrackingindex
min.
Strayinductancemodule
Moduleleadresistance,terminals-chip
LsCE
TC=25°C,perswitch
30
RCC'+EE'
Storagetemperature
-40
ScrewM5baseplatetoheatsink
M
3.00
Terminalconnectiontorque
ScrewM6
M
3.0
G
nH
1.00
Tstg
Mountingtorqueformodulmounting
Weight
> 200
typ. max.
485
mΩ
125
°C
6.00
Nm
6.0
Nm
g
Der Kollektor-Dauergleichstrom / Dioden-Dauergleichstrom ist durch die Lastanschlüsse begrenzt.
DC-collector current / diode forward current limited by power terminals.
Final Data Sheet
5
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
6CharacteristicsDiagrams
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
VGE=15V
outputcharacteristicIGBT,Inverter(typical)
IC=f(VCE)
Tvj=150°C
800
800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
700
600
600
500
500
IC [A]
IC [A]
700
400
400
300
300
200
200
100
100
0
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6
VCE [V]
transfercharacteristicIGBT,Inverter(typical)
IC=f(VGE)
VCE=20V
0,0
0,5
1,0
1,5
2,0
2,5 3,0
VCE [V]
3,5
4,0
4,5
5,0
switchinglossesIGBT,Inverter(typical)
Eon=f(IC),Eoff=f(IC)
VGE=±15V,RGon=1.8Ω,RGoff=1.8Ω,VCE=300V
800
30
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
700
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
25
600
20
E [mJ]
IC [A]
500
400
15
300
10
200
5
100
0
5
Final Data Sheet
6
7
8
9
VGE [V]
10
11
0
12
6
0
100
200
300
IC [A]
400
500
600
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
switchinglossesIGBT,Inverter(typical)
Eon=f(RG),Eoff=f(RG)
VGE=±15V,IC=400A,VCE=300V
transientthermalimpedanceIGBT,Inverter
ZthJC=f(t)
80
1
Eon, Tvj = 125°C
Eoff, Tvj = 125°C
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
70
ZthJC : IGBT
60
0,1
ZthJC [K/W]
E [mJ]
50
40
30
0,01
20
i:
1
2
3
4
ri[K/W]: 0,01419 0,06479 0,0335 0,00743
τi[s]:
0,00036 0,01937 0,03762 0,98695
10
0
0
2
4
6
8
10
RG [Ω]
12
14
16
0,001
0,001
18
reversebiassafeoperatingareaIGBT,Inverter(RBSOA)
IC=f(VCE)
VGE=±15V,RGoff=1.8Ω,Tvj=150°C
0,01
0,1
t [s]
1
10
forwardcharacteristicofDiode,Inverter(typical)
IF=f(VF)
900
800
IC, Modul
IC, Chip
800
Tvj = 25°C
Tvj = 125°C
Tvj = 150°C
700
700
600
600
500
IF [A]
IC [A]
500
400
400
300
300
200
200
100
100
0
0
Final Data Sheet
100
200
300
400
VCE [V]
500
600
0
700
7
0,0
0,2
0,4
0,6
0,8
1,0 1,2
VF [V]
1,4
1,6
1,8
2,0
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
switchinglossesDiode,Inverter(typical)
Erec=f(IF)
RGon=1.8Ω,VCE=300V
switchinglossesDiode,Inverter(typical)
Erec=f(RG)
IF=400A,VCE=300V
12
12
Erec, Tvj = 125°C
Erec, Tvj = 150°C
10
10
8
8
E [mJ]
E [mJ]
Erec, Tvj = 125°C
Erec, Tvj = 150°C
6
6
4
4
2
2
0
0
100
200
300
IF [A]
400
500
0
600
transientthermalimpedanceDiode,Inverter
ZthJC=f(t)
0
2
4
6
8
10
RG [Ω]
12
14
16
18
140
160
NTC-Thermistor-temperaturecharacteristic(typical)
R=f(T)
1
100000
ZthJC : Diode
Rtyp
10000
R[Ω]
ZthJC [K/W]
0,1
0,01
1000
i:
1
2
3
4
ri[K/W]: 0,02989 0,12491 0,03869 0,00643
τi[s]:
0,00051 0,01769 0,04823 1,81616
0,001
0,001
Final Data Sheet
0,01
0,1
t [s]
1
100
10
8
0
20
40
60
80
100
TC [°C]
120
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
7Circuitdiagram
J
Final Data Sheet
9
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
8Packageoutlines
Final Data Sheet
10
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
9LabelCodes
9.1ModuleCode
CodeFormat
Data Matrix
Encoding
ASCII Text
SymbolSize
16x16
Standard
IEC24720 and IEC16022
CodeContent
Content
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
Digit
1-5
6 - 11
12 - 19
20 - 21
22 - 23
Example(below)
71549
142846
55054991
15
30
Example
71549142846550549911530
9.2PackingCode
CodeFormat
Code128
Encoding
Code Set A
SymbolSize
34 digits
Standard
IEC8859-1
CodeContent
Content
Backend Construction Number
Production Lot Number
Serial Number
Date Code
Box Quantity
Identifier
X
1T
S
9D
Q
Digit
2-9
12 - 19
21 - 25
28 - 31
33 - 34
Example(below)
95056609
2X0003E0
754389
1139
15
Example
X950566091T2X0003E0S754389D1139Q15
Final Data Sheet
11
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
RevisionHistory
Major changes since previous revision
Revision History
Reference
Date
Description
V1.0
2009-08-26
Initial Version
V1.1
2009-10-14
target data
V2.0
2009-11-19
preliminary data
V3.0
2010-04-21
final data
V3.1
2012-02-29
final data
V3.2
2016-11-08
new datasheet format
V3.3
2017-03-07
-
V3.4
2018-08-09
update of "Terms & Conditions of usage"
Final Data Sheet
12
V3.4,2018-08-09
FS400R07A1E3
HybridPACKª1Module
Terms&Conditionsofusage
Edition2018-08-01
Publishedby
InfineonTechnologiesAG
81726Munich,Germany
©2018InfineonTechnologiesAG
AllRightsReserved.
LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoany
examplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,Infineon
Technologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementof
intellectualpropertyrightsofanythirdparty.
Information
Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice
(http://www.infineon.com)
Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthe
nearestInfineonTechnologiesOffice.
Thesecomponentsarenotdesignedfor“specialapplications”thatdemandextremelyhighreliabilityorsafetysuchasaerospace,defenseorlife
supportdevicesorsystems(ClassIIImedicaldevices).Ifyouintendtousethecomponentsinanyofthesespecialapplications,pleasecontact
yourlocalrepresentativeatInternationalRectifierHiRelProducts,Inc.ortheInfineonsupport(https://www.infineon.com/support)toreview
productrequirementsandreliabilitytesting.
InfineonTechnologiescomponentsmaybeusedinspecialapplicationsonlywiththeexpresswrittenapprovalofInfineonTechnologies.Class
IIImedicaldevicesareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Ifthey
fail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Trademarks
TrademarksofInfineonTechnologiesAG
AURIX™,C166™,CanPAK™,CIPOS™,CIPURSE™,EconoPACK™,CoolMOS™,CoolSET™,CORECONTROL™,CROSSAVE™,DAVE™,
DI-POL™,EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPIM™,EconoPACK™,EiceDRIVER™,eupec™,FCOS™,HITFET™,
HybridPACK™,I²RF™,ISOFACE™,IsoPACK™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OptiMOS™,ORIGA™,POWERCODE™,
PRIMARION™,PrimePACK™,PrimeSTACK™,PRO-SIL™,PROFET™,RASIC™,ReverSave™,SatRIC™,SIEGET™,SINDRION™,
SIPMOS™,SmartLEWIS™,SOLIDFLASH™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™.
OtherTrademarks
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DECTForum.COLOSSUS™,FirstGPS™ofTrimbleNavigationLtd.EMV™ofEMVCo,LLC(VisaHoldingsInc.).EPCOS™ofEpcosAG.
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CommissionElectrotechniqueInternationale.IrDA™ofInfraredDataAssociationCorporation.ISO™ofINTERNATIONALORGANIZATION
FORSTANDARDIZATION.MATLAB™ofMathWorks,Inc.MAXIM™ofMaximIntegratedProducts,Inc.MICROTEC™,NUCLEUS™ofMentor
GraphicsCorporation.MIPI™ofMIPIAlliance,Inc.MIPS™ofMIPSTechnologies,Inc.,USA.muRata™ofMURATAMANUFACTURINGCO.,
MICROWAVEOFFICE™(MWO)ofAppliedWaveResearchInc.,OmniVision™ofOmniVisionTechnologies,Inc.Openwave™Openwave
SystemsInc.REDHAT™RedHat,Inc.RFMD™RFMicroDevices,Inc.SIRIUS™ofSiriusSatelliteRadioInc.SOLARIS™ofSun
Microsystems,Inc.SPANSION™ofSpansionLLCLtd.Symbian™ofSymbianSoftwareLimited.TAIYOYUDEN™ofTaiyoYudenCo.
TEAKLITE™ofCEVA,Inc.TEKTRONIX™ofTektronixInc.TOKO™ofTOKOKABUSHIKIKAISHATA.UNIX™ofX/OpenCompanyLimited.
VERILOG™,PALLADIUM™ofCadenceDesignSystems,Inc.VLYNQ™ofTexasInstrumentsIncorporated.VXWORKS™,WINDRIVER™of
WINDRIVERSYSTEMS,INC.ZETEX™ofDiodesZetexLimited.
Last update
Final Data Sheet
2011-11-11
13
V3.4,2018-08-09
www.infineon.com
PublishedbyInfineonTechnologiesAG