FS50R12N2T7B15BPSA2

FS50R12N2T7_B15 EconoPACK™2 module EconoPACK™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 50 A / ICRM = 100 A - TRENCHSTOPTM IGBT7 - Low VCE,sat - Overload operation up to 175°C • Mechanical features - High power and thermal cycling capability - Integrated NTC temperature sensor - Copper base plate - Al2O3 substrate with low thermal resistance - Solder contact technology - Standard housing Potential applications • Auxiliary inverters • Motor drives • Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min Material of module baseplate Values Unit 2.5 kV Cu Internal isolation basic insulation (class 1, IEC 61140) Al2O3 Creepage distance dCreep terminal to heatsink 10.0 mm Clearance dClear terminal to heatsink 7.5 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 >200 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip Storage temperature LsCE RCC'+EE' M Weight G Table 3 TC=25°C, per switch Tstg Mounting torque for module mounting 2 Values Unit Typ. Max. 17 nH 3.3 mΩ -40 125 °C 3 6 Nm - Mounting according to M5, Screw valid application note 180 g Values Unit Tvj = 25 °C 1200 V TC = 115 °C 50 A 100 A ±20 V The current under continuous operation is limited to 50A rms per connector pin. IGBT, Inverter Maximum rated values Parameter Symbol Note or test condition Collector-emitter voltage VCES Continuous DC collector current ICDC Tvj max = 175 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet °C Characteristic values Parameter Note: 140 3 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 50 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 1.50 1.80 V Tvj = 125 °C 1.64 Tvj = 175 °C 1.72 6.45 V IC = 1.28 mA, VCE = VGE, Tvj = 25 °C VGE = ±15 V, VCE = 600 V 5.15 5.80 0.92 µC 0 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 11.1 nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 0.039 nF Collector-emitter cut-off current ICES VCE = 1200 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on energy loss per pulse Turn-off energy loss per pulse SC data tr tdoff tf Eon Eoff ISC Tvj = 25 °C Tvj = 25 °C 0.065 Tvj = 125 °C 0.067 Tvj = 175 °C 0.068 Tvj = 25 °C 0.041 Tvj = 125 °C 0.045 Tvj = 175 °C 0.047 Tvj = 25 °C 0.260 Tvj = 125 °C 0.340 Tvj = 175 °C 0.380 Tvj = 25 °C 0.110 Tvj = 125 °C 0.210 Tvj = 175 °C 0.270 Tvj = 25 °C 4.89 Tvj = 125 °C 6.3 Tvj = 175 °C 7.34 IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGoff = 7.5 Ω, dv/dt = 3000 V/µs (Tvj = 175 °C) Tvj = 25 °C 3.19 Tvj = 125 °C 5.15 Tvj = 175 °C 6.33 VGE ≤ 15 V, VCC = 800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 8 µs, Tvj=150 °C 190 tP ≤ 7 µs, Tvj=175 °C 180 IC = 50 A, VCE = 600 V, VGE = ±15 V, RGon = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, VGE = ±15 V, RGoff = 7.5 Ω IC = 50 A, VCE = 600 V, Lσ = 35 nH, VGE = ±15 V, RGon = 7.5 Ω, di/dt = 885 A/µs (Tvj = 175 °C) 0.01 mA 100 nA µs µs µs µs mJ mJ A (table continues...) Datasheet 4 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 3 Typ. Unit Max. 0.579 0.147 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value Table 6 I2t Values Unit 1200 V 50 A 100 A Tvj = 125 °C 465 A²s Tvj = 175 °C 420 Tvj = 25 °C tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage Peak reverse recovery current Recovered charge VF IRM Qr IF = 50 A, VGE = 0 V VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 885 A/µs (Tvj = 175 °C) VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 885 A/µs (Tvj = 175 °C) Unit Typ. Max. Tvj = 25 °C 1.72 2.10 Tvj = 125 °C 1.59 Tvj = 175 °C 1.52 Tvj = 25 °C 25 Tvj = 125 °C 33 Tvj = 175 °C 38 Tvj = 25 °C 3.23 Tvj = 125 °C 6.46 Tvj = 175 °C 8.88 V A µC (table continues...) Datasheet 5 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 4 NTC-Thermistor Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Reverse recovery energy Erec VR = 600 V, IF = 50 A, VGE = -15 V, -diF/dt = 885 A/µs (Tvj = 175 °C) Tvj = 25 °C 1.02 Tvj = 125 °C 2.21 Tvj = 175 °C 3.16 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Note: 4 Typ. Unit Max. mJ 0.900 0.168 -40 K/W K/W 175 °C Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to AN 2018-14. NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 Deviation of R100 ΔR/R Power dissipation P25 TNTC = 25 °C Typ. Unit Max. 5 TNTC = 100 °C, R100 = 493 Ω -5 TNTC = 25 °C kΩ 5 % 20 mW B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Note: Datasheet Specification according to the valid application note. 6 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 5 Characteristics diagrams 5 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 175 °C 100 100 90 90 80 80 70 70 60 60 50 50 40 40 30 30 20 20 10 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V 100 26 24 90 22 80 20 70 18 60 16 14 50 12 40 10 30 8 6 20 4 10 2 0 0 5 Datasheet 0.5 6 7 8 9 10 11 12 13 0 7 10 20 30 40 50 60 70 80 90 100 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 5 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 7.5 Ω, RGon = 7.5 Ω, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 10 40 36 32 1 28 24 20 0.1 16 12 0.01 8 4 0 0.001 0 10 20 30 40 50 60 70 80 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 50 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C 10 20 30 40 50 60 70 80 90 100 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 1 1 0.1 0.1 0.01 0 Datasheet 10 20 30 40 50 60 70 0.01 0.001 80 8 0.01 0.1 1 10 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 5 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 7.5 Ω, VGE = ±15 V, Tvj = 175 °C Voltage slope (typical), IGBT, Inverter dv/dt = f(RG) IC = 50 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C 130 8 120 7 110 100 6 90 5 80 70 4 60 50 3 40 2 30 20 1 10 0 0 0 200 400 600 800 1000 1200 1400 0 Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 10 20 30 40 50 60 70 80 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 50 A, Tvj = 25 °C 1000 15 10 100 5 10 0 1 -5 0.1 -10 -15 0.01 0 Datasheet 10 20 30 40 50 60 70 80 90 100 0.0 9 0.2 0.4 0.6 0.8 1.0 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 5 Characteristics diagrams Forward characteristic (typical), Diode, Inverter IF = f(VF) Switching losses (typical), Diode, Inverter Erec = f(IF) RGon = 7.5 Ω, VR = 600 V 100 5.0 90 4.5 80 4.0 70 3.5 60 3.0 50 2.5 40 2.0 30 1.5 20 1.0 10 0.5 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 Switching losses (typical), Diode, Inverter Erec = f(RG) IF = 50 A, VR = 600 V 10 20 30 40 50 60 70 80 90 100 Transient thermal impedance, Diode, Inverter Zth = f(t) 10 5.0 4.5 4.0 3.5 1 3.0 2.5 2.0 0.1 1.5 1.0 0.5 0.0 0 Datasheet 10 20 30 40 50 60 70 0.01 0.001 80 10 0.01 0.1 1 10 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 5 Characteristics diagrams Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 100000 10000 1000 100 10 0 Datasheet 25 50 75 100 125 150 175 11 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 6 Circuit diagram 6 Circuit diagram J Figure 1 Datasheet 12 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 7 Package outlines 7 Package outlines In fin e o n Figure 2 Datasheet 13 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 14 Revision 1.00 2021-12-16 FS50R12N2T7_B15 EconoPACK™2 module Revision history Revision history Document revision Date of release Description of changes 1.00 2021-12-16 Final datasheet Datasheet 15 Revision 1.00 2021-12-16 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-12-16 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA182-001 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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