FS650R08A4P2BPSA1

HybridPACK™DC6Module FS650R08A4P2 DC6ivariant FinalDataSheet V3.0,2020-05-06 AutomotiveHighPower FS650R08A4P2 HybridPACK™DC6Module 1Features/Description HybridPACK™DC6imodulewithEDT2IGBTandDiode P1 P2 P3 T1 C1 C3 C5 T T T VCES = 750 V IC = 650 A Typical Applications •Automotive Applications •Hybrid Electrical Vehicles (H)EV •Motor Drives •Commercial Agriculture Vehicles •Optimized for automotive applications with DC link voltages up to 470 V Description The HybridPACKTM DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electric vehicles. The power module implements the new EDT2 IGBT generation, which is an automotive Micro-Pattern Trench-Field-Stop cell design optimized for electric drive train applications. The chipset has benchmark current density combined with short circuit ruggedness and increased blocking voltage for reliable inverter operation under harsh environmental conditions. The EDT2 IGBTs also show excellent light load power losses, which helps to improve system efficiency over a real driving cycle. The EDT2 IGBT was optimized for applications with switching frequencies in the range of 10 kHz. Electrical Features •Blocking voltage 750V •Low VCEsat •Low Switching Losses •Low Qg and Crss •Low Inductive Design •Tvj op = 150°C •Short-time extended Operation Temperature Tvj op = 175°C The new HybridPACKTM DC6i power module family comes with mechanical guiding elements supporting easy assembly processes for customers. Furthermore, the press-fit pins for the signal terminals avoid additional time consuming selective solder processes, which provides cost savings on system level and increases system reliability. The direct cooled baseplate with ribbon bonds structure in the FS650R08A4P2 product shows superior thermal characteristics. Due to the high clearance & creepage distances, the module family is also well suited for increased system working voltages and supports modular inverter approaches. Mechanical Features •2.5kV AC 1min Insulation •High Creepage and Clearance Distances •Compact design •High Power Density •Direct Cooled Base Plate with Ribbon Bonds •Guiding elements for PCB and cooler assembly •Integrated NTC temperature sensor •PressFIT Contact Technology •RoHS compliant Product Name Ordering Code FS650R08A4P2 SP001714512 Final Data Sheet 2 V3.0,2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 2 IGBT,Inverter 2.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Collector-emitter voltage Tvj = 25°C VCES 750 V ICN 650 A Continuous DC collector current TF = 65°C, Tvj max = 175°C IC nom 3751) A Repetitive peak collector current tP = 1 ms ICRM 1300 A Total power dissipation TF = 75°C, Tvj max = 175°C Ptot 4881) W VGES +/-20 V Implemented collector current Gate-emitter peak voltage 2.2 Characteristic Values Collector-emitter saturation voltage min. IC = 375 A, VGE = 15 V IC = 375 A, VGE = 15 V IC = 375 A, VGE = 15 V Tvj = 25°C Tvj = 150°C Tvj = 175°C VCE sat typ. max. 1.10 1.15 1.15 1.35 V IC = 650 A, VGE = 15 V IC = 650 A, VGE = 15 V Tvj = 25°C Tvj = 175°C Gate threshold voltage IC = 11.5 mA, VCE = VGE Tvj = 25°C Tvj = 175°C VGEth Gate charge VGE = -8 V ... 15 V, VCE = 400V QG 3.55 µC Tvj = 25°C RGint 1.0 Ω Internal gate resistor 1.30 1.45 4.90 5.80 4,10 6.50 V Input capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cies 65.0 nF Output capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Coes 0.83 nF Reverse transfer capacitance f = 1 MHz, VCE = 50 V, VGE = 0 V Tvj = 25°C Cres 0.25 Collector-emitter cut-off current VCE = 750 V, VGE = 0 V Tvj = 25°C ICES Gate-emitter leakage current VCE = 0 V, VGE = 20 V Tvj = 25°C IGES Turn-on delay time, inductive load IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGon = 2.4 Ω Rise time, inductive load Turn-off delay time, inductive load Fall time, inductive load Turn-on energy loss per pulse Turn-off energy loss per pulse nA µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tr 0.07 0.08 0.08 µs IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C td off 0.80 0.88 0.92 µs IC = 375 A, VCE = 400 V VGE = -8 V / +15 V RGoff = 5.1 Ω Tvj = 25°C Tvj = 150°C Tvj = 175°C tf 0.06 0.07 0.08 µs IC = 375 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGon = 2.4 Ω di/dt (Tvj 25°C) = 7000 A/µs di/dt (Tvj 175°C) = 4000 A/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C IC = 375 A, VCE = 400 V, LS = 20 nH VGE = -8 V / +15 V RGoff = 5.1 Ω dv/dt (Tvj 25°C) = 3800 V/µs dv/dt (Tvj 175°C) = 3300 V/µs Tvj = 25°C Tvj = 150°C Tvj = 175°C tP ≤ 6 µs, Tvj = 25°C tP ≤ 3 µs, Tvj = 175°C Eon 8.00 11.5 13.0 mJ Eoff 18.0 23.5 24.5 mJ Thermal resistance, junction to cooling fluid per IGBT; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 3) 400 td on VGE ≤ 15 V, VCC = 400 V VCEmax = VCES -LsCE ·di/dt 2) mA 0.30 0.32 0.33 SC data 1) nF 1.0 3900 3200 ISC A 0.1702) 0.2052) K/W -40 150 1503) 175 °C Verified by characterization / design not by test. Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 3 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 3 Diode, Inverter 3.1 Maximum Rated Values Parameter Conditions Symbol Value Unit Repetitive peak reverse voltage Tvj = 25°C VRRM 750 V Implemented forward current IFN 650 A Continuous DC forward current IF 3751) A Repetitive peak forward current tP = 1 ms I²t - value VR = 0 V, tP = 10 ms, Tvj = 150°C VR = 0 V, tP = 10 ms, Tvj = 175°C 3.2 IFRM 1300 A I²t 16500 14000 A²s A²s Characteristic Values Forward voltage Peak reverse recovery current Recovered charge Reverse recovery energy min. max. 1.65 Tvj = 25°C Tvj = 150°C Tvj = 175°C IF = 650 A, VGE = 0 V IF = 650 A, VGE = 0 V Tvj = 25°C Tvj = 175°C IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C IRM 205 320 345 A IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Qr 24.5 47.5 56.0 µC IF = 375 A, - diF/dt = 4000 A/µs (Tvj = 150°C) VR = 400 V VGE = -8 V Tvj = 25°C Tvj = 150°C Tvj = 175°C Erec 8.60 16.0 19.0 mJ VF V 1.70 1.60 Thermal resistance, junction to cooling fluid per diode; ∆V/∆t = 10 dm³/min, TF = 75°C RthJF Temperature under switching conditions top continuous for 10s within a period of 30s, occurence maximum 3000 times over lifetime Tvj op 4 typ. 1.45 1.35 1.30 IF = 375 A, VGE = 0 V IF = 375 A, VGE = 0 V IF = 375 A, VGE = 0 V NTC-Thermistor 0.2302) 0.2752) K/W 1503) 175 -40 150 min. typ. °C max. Parameter Conditions Symbol Value Unit Rated resistance TC = 25°C R25 5.00 kΩ Deviation of R100 TC = 100°C, R100 = 493 Ω Power dissipation TC = 25°C B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K ∆R/R -5 P25 5 % 20.0 mW Specification according to the valid application note. 1) 2) 3) Verified by characterization / design not by test. Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C. Final Data Sheet 4 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 5 Module Parameter Conditions Isolation test voltage RMS, f = 50 Hz, t = 1 min Symbol Value VISOL 2.5 Unit kV 1) Cu/Ni/Al Material of module baseplate Al2O32) Internal isolation basic insulation (class 1, IEC 61140) Creepage distance terminal to heatsink terminal to terminal dCreep 18.2 8.2 mm Clearance terminal to heatsink terminal to terminal dClear 18.2 5.9 mm CTI Comperative tracking index min. Pressure drop in cooling circuit Maximum pressure in cooling circuit ∆V/∆t = 10.0 dm³/min; TF = 75°C Tbaseplate < 40°C Tbaseplate ≥ 40°C (relative pressure) ∆p 903) LsCE Storage temperature Tstg -40 Screw M5 baseplate to heatsink M 3.00 Terminal connection torque Screw M5 M 3.0 G 2) 3) bar 15 Mounting torque for modul mounting Weight mbar 2.5 2.0 p Stray inductance module 1) > 200 typ. max. - nH 125 °C 6.00 Nm 6.0 Nm 490 g Ni plated Cu baseplate with Al ribbon bonds. Improved Al2O3 ceramic. Cooler design and flow direction according to application note AN-HPDC6i-AN-HP1-DC6i-Assembly-Instructions. Cooling fluid 50% water / 50% ethylenglycol. Final Data Sheet 5 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 6 Characteristics Diagrams output characteristic IGBT,Inverter (typical) IC = f (VCE) VGE = 15 V output characteristic IGBT,Inverter (typical) IC = f (VCE) Tvj = 150°C 1300 1300 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1200 1100 1000 1000 900 900 800 800 700 700 IC [A] 1100 IC [A] VGE = 19V VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V 1200 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VCE [V] transfer characteristic IGBT,Inverter (typical) IC = f (VGE) VCE = 20 V 0,0 0,4 0,8 1,2 1,6 2,0 2,4 VCE [V] 2,8 3,2 3,6 4,0 switching losses IGBT,Inverter (typical) Eon = f (IC), Eoff = f (IC), VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V 1300 55 Tvj = 25°C Tvj = 150°C Tvj = 175°C 1200 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 50 1100 45 1000 40 900 35 700 E [mJ] IC [A] 800 600 500 30 25 20 400 15 300 10 200 5 100 0 0 5 Final Data Sheet 6 7 8 9 VGE [V] 10 11 12 0 6 100 200 300 400 IC [A] 500 600 700 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module switching losses IGBT,Inverter (typical) Eon = f (RG), Eoff = f (RG), VGE = +15V / -8V, IC = 450 A, VCE = 400 V transient thermal impedance IGBT,Inverter ZthJF = f (t), cooler design according to AN-HPDC6i ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol 80 1 Eon, Tvj = 150°C Eoff, Tvj = 150°C Eon, Tvj = 175°C Eoff, Tvj = 175°C 70 ZthJF : IGBT 60 0,1 ZthJF [K/W] E [mJ] 50 40 30 0,01 20 i: 1 2 3 4 ri[K/W]: 0,01 0,07 0,08 0,045 τi[s]: 0,001 0,03 0,25 1,5 10 0 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 0,001 0,001 24 reverse bias safe operating area IGBT,Inverter (RBSOA) IC = f (VCE) VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C 0,01 0,1 t [s] 1 10 thermal impedance IGBT,Inverter RthJF = f (∆V/∆t), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol 1400 0,225 RthJF: IGBT 1300 1200 0,220 1100 1000 0,215 900 RthJF [K/W] IC [A] 800 700 600 500 0,210 0,205 400 300 IC, Modul IC, Chip 200 0,200 100 0 0,195 0 Final Data Sheet 100 200 300 400 500 VCE [V] 600 700 800 4 7 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module capacity characteristic IGBT,Inverter (typical) C = f(VCE) VGE = 0 V, Tvj = 25°C, f = 1MHz gate charge characteristic IGBT,Inverter (typical) VGE = f(QG) VCE = 400 V, IC = 450 A, Tvj = 25°C 100 15 QG 12 Cies Coes Cres 9 10 C [nF] VGE [V] 6 3 0 1 -3 -6 0,1 -9 0 100 200 300 400 500 0,0 0,5 1,0 1,5 VCE [V] maximum allowed collector-emitter voltage VCES = f(Tvj), verified by characterization / design not by test ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C 2,0 2,5 QG [µC] 3,0 3,5 4,0 voltage slope IGBT,Inverter (typical) dv/dt = f (RG) VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj = 150°C 800 3,5 VCES dv/dtoff: IGBT dv/dton: IGBT 3,0 775 2,5 dv/dt [kV/µs] VCES [V] 750 725 2,0 1,5 700 1,0 675 650 -50 Final Data Sheet 0,5 0,0 -25 0 25 50 75 100 125 150 175 200 Tvj [°C] 0 8 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 24 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module current slope IGBT,Inverter (typical) di/dt = f (RG), VGE = +15V / -8V, IC = 375 A, VCE = 400 V Tvj= 150°C forward characteristic of Diode, Inverter (typical) IF = f (VF) 6 1300 di/dtoff: IGBT di/dton: IGBT Tvj = 25°C Tvj = 150°C Tvj = 175°C 1200 1100 5 1000 900 4 IF [A] di/dt [kA/µs] 800 3 700 600 500 2 400 300 1 200 100 0 0 0 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 24 switching losses Diode, Inverter (typical) Erec = f (IF), RGon = 2.4 Ω, VCE = 400 V 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 VF [V] switching losses Diode, Inverter (typical) Erec = f (RG), IF = 375 A, VCE = 400 V 28 22 Erec, Tvj = 150°C Erec, Tvj = 175°C 26 Erec, Tvj = 150°C Erec, Tvj = 175°C 20 24 18 22 20 16 18 14 E [mJ] E [mJ] 16 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 0 Final Data Sheet 100 200 300 400 IF [A] 500 600 700 0 9 2 4 6 8 10 12 14 RG [Ω] 16 18 20 22 24 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module transient thermal impedance Diode, Inverter ZthJF = f(t), cooler design according to AN-HPDC6i ∆V/∆t = 10 dm³/min; Tf = 75°C; 50% water / 50% ethylenglycol safe operation area Diode, Inverter (SOA) IR = f(VR) Tvj = 150°C 1 1400 ZthJF : Diode 1300 1200 1100 1000 0,1 900 IR [A] ZthJF [K/W] 800 700 600 500 0,01 400 IR, RGon = 0.50 Ω IR, RGon = 0.75 Ω IR, RGon = 1.00 Ω 300 200 i: 1 2 3 4 ri[K/W]: 0,017 0,12 0,1 0,038 τi[s]: 0,001 0,03 0,25 1,5 0,001 0,001 100 0 0,01 0,1 t [s] 1 10 thermal impedance Diode, Inverter RthJF = f(∆V/∆t), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol 0 100 200 300 400 VR [V] 500 600 700 800 140 160 NTC-Thermistor-temperature characteristic (typical) R = f (T) 0,295 100000 RthJF: Diode Rtyp 0,285 10000 0,280 R[Ω] RthJF [K/W] 0,290 0,275 1000 0,270 0,265 100 4 Final Data Sheet 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 0 10 20 40 60 80 100 TC [°C] 120 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module pressure drop in cooling circuit ∆p = f (∆V/∆t), cooler design according to AN-HPDC6i Tf = 75°C; 50% water / 50% ethylenglycol 160 ∆p: Modul 140 120 ∆p [mbar] 100 80 60 40 20 0 4 Final Data Sheet 5 6 7 8 9 10 ∆V/∆t [dm³/min] 11 12 13 14 11 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 7 Circuit diagram _DC6i H_P P1 P1 P2 P2 P3 P3 T1 C1 C3 C5 T T2 G1 G3 G5 E1 E3 E5 U T3 V W T T4 G2 G4 G6 E2 E4 E6 T5 T T6 N1 Final Data Sheet N2 N3 12 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module A 3,05 max. loop height 0 1,5 0,5 47,6 43,5 36,8 29,05 21,75 C(5:1) A(2:1) (4) 43 0,3 112,6 0,4 102,4 max. Reserved area 63,55 62,85 17,05 0,5 (9x) 140 0,4 126,5 0,5 Package outlines 22,35 0,5 14 0,3 C 1,0 A B C 120,9 100,65 102,5 104,35 83,2 62,15 64 65,85 44,8 ** Pin positions checked with pin gauge according to Application Note ** A B C 21x 6,6 0,1 0 23,65 25,5 27,35 (2) 6,9 0 5,85 6,55 0 7,1 8 (15) 9x E5 G5 (23,57) 5,5 +- 0,05 0,15 C5 T6 T5 G6 ( E3 G3 E1 G1 A C for Ejot PT30x10 T2 T1 G2 E4 E6 D C1 C3 6,2 ) T4 T3 G4 B 2,4 0,1 57 1,0 A B C 9,8 min. 3x E2 B(2:1) 10,5 min. 0 M5 B 4,9 0,15 0,2 A B C D 5,4 0,15 77,5 D-D ( 1 : 1 ) U 48,4 max. Reserved area V W 20,5 N3 P3 N2 P2 P1 N1 All dimensions are measured in the delivered state. 128 111 117 96 75 53 (56) 64 32 0 11 17 12,85 0,2 (4x) (Control board height) Sprue area, max. height 0,6mm Final Data Sheet 13 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module 9 Label Codes 9.1 Module Code Code Format Data Matrix Encoding ASCII Text Symbol Size 16x16 Standard IEC24720 and IEC16022 Code Content Content Module Serial Number Module Material Number Production Order Number Datecode (Production Year) Datecode (Production Week) Digit 1-5 6 - 11 12 - 19 20 - 21 22 - 23 Example (below) 71549 142846 55054991 15 30 Example 71549142846550549911530 9.2 Packing Code Code Format Code128 Encoding Code Set A Symbol Size 34 digits Standard IEC8859-1 Code Content Content Backend Construction Number Production Lot Number Serial Number Date Code Box Quantity Identifier X 1T S 9D Q Digit 2-9 12 - 19 21 - 25 28 - 31 33 - 34 Example (below) 95056609 2X0003E0 754389 1139 15 Example X950566091T2X0003E0S754389D1139Q15 Final Data Sheet 14 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module Revision History Major changes since previous revision Revision History Reference Date Description V1.0 2017-08-31 Target datasheet V1.1 2018-01-18 Change of package designation V1.2 2018-06-25 Extention of target data (E, Rth, ...) V1.3 2019-02-12 New package outlines / pinning V2.0 2019-10-30 Preliminary datasheet V3.0 2020-05-06 Final datasheet Final Data Sheet 15 V3.0, 2020-05-06 FS650R08A4P2 HybridPACK™ DC6 Module Terms & Conditions of usage Edition 2018-08-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (http://www.infineon.com) Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review product requirements and reliability testing. Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class III medical devices are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Trademarks Trademarks of Infineon Technologies AG AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™, ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™, POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™, ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™. Other Trademarks Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. 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SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited. Last update Final Data Sheet 2011-11-11 16 V3.0, 2020-05-06 www.infineon.com Published by Infineon Technologies AG