HybridPACK™DriveModule
FS660R08A6P2FB
FinalDataSheet
V3.0,2019-05-20
AutomotiveHighPower
FS660R08A6P2FB
HybridPACK™DriveModule
1Features/Description
HybridPACK™DrivemodulewithEDT2IGBTandDiode
T
T
T
VCES = 750 V
IC = 660 A
Typical Applications
•Automotive Applications
•Hybrid Electrical Vehicles (H)EV
•Motor Drives
•Commercial Agriculture Vehicles
Description
The HybridPACKTM Drive is a very compact
six-pack module optimized for hybrid and electric
vehicles. The product FS660R08A6P2FB comes
with a flat baseplate and is a 750V/660A module
derivate within the HybridPACK Drive family. The
power module implements the new EDT2 IGBT
generation, which is an automotive Micro-Pattern
Trench-Field-Stop cell design optimized for electric
drive train applications. The chipset has benchmark
current density combined with short circuit
ruggedness and increased blocking voltage for
reliable inverter operation under harsh
environmental conditions. The EDT2 IGBTs also
show excellent light load power losses, which helps
to improve system efficiency over a real driving
cycle. The EDT2 IGBT was optimized for
applications with switching frequencies in the range
of 10 kHz.
Electrical Features
•Blocking voltage 750V
•Low VCEsat
•Low Switching Losses
•Low Qg and Crss
•Low Inductive Design
•Tvj op = 150°C
•Short-time extended Operation Temperature
Tvj op = 175°C
The new The HybridPACKTM Drive power module
family comes with mechanical guiding elements
supporting easy assembly processes for customers.
Furthermore, the press-fit pins for the signal
terminals avoid additional time consuming selective
solder processes, which provides cost savings on
system level and increases system reliability. The
two products in the The HybridPACKTM Drive family
with flat baseplate in the FS660R08A6P2FB and
PinFin baseplate in the FS820R08A6P2B allow a
very cost effective scaling for different inverter
power levels at a minimum inverter design effort.
Mechanical Features
•4.2kV DC 1sec Insulation
•High Creepage and Clearance Distances
•Compact design
•High Power Density
•Copper Base Plate
•Guiding elements for PCB and cooler assembly
•Integrated NTC temperature sensor
•PressFIT Contact Technology
•RoHS compliant
•UL 94 V0 module frame
Product Name
Ordering Code
FS660R08A6P2FB
SP001632426
Final Data Sheet
2
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FS660R08A6P2FB
HybridPACK™ Drive Module
2
IGBT,Inverter
2.1
Maximum Rated Values
Parameter
Conditions
Symbol
Value
Unit
Collector-emitter voltage
Tvj = 25°C
VCES
750
V
ICN
660
A
Continuous DC collector current
TC = 80°C, Tvj max = 175°C
IC nom
4501)
A
Repetitive peak collector current
tP = 1 ms
ICRM
1320
A
Total power dissipation
TC = 75°C, Tvj max = 175°C
Ptot
10531)
W
VGES
+/-20
V
Implemented collector current
Gate-emitter peak voltage
2.2
Characteristic Values
Collector-emitter saturation voltage
min.
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
IC = 450 A, VGE = 15 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
VCE sat
typ.
max.
1.10
1.15
1.15
1.35
V
IC = 660 A, VGE = 15 V
IC = 660 A, VGE = 15 V
Tvj = 25°C
Tvj = 175°C
Gate threshold voltage
IC = 9.60 mA, VCE = VGE
Tvj = 25°C
Tvj = 175°C
VGEth
Gate charge
VGE = -8 V ... 15 V, VCE = 400V
QG
4.40
µC
Tvj = 25°C
RGint
0.7
Ω
Internal gate resistor
1.25
1.35
4.90
5.80
4,10
6.50
V
Input capacitance
f = 1 MHz, VCE = 50 V, VGE = 0 V
Tvj = 25°C
Cies
80.0
nF
Output capacitance
f = 1 MHz, VCE = 50 V, VGE = 0 V
Tvj = 25°C
Coes
1.00
nF
Reverse transfer capacitance
f = 1 MHz, VCE = 50 V, VGE = 0 V
Tvj = 25°C
Cres
0.30
Collector-emitter cut-off current
VCE = 750 V, VGE = 0 V
VCE = 750 V, VGE = 0 V
Tvj = 25°C
Tvj = 175°C
ICES
Gate-emitter leakage current
VCE = 0 V, VGE = 20 V
Tvj = 25°C
IGES
Turn-on delay time, inductive load
IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGon = 2.4 Ω
Rise time, inductive load
Turn-off delay time, inductive load
Fall time, inductive load
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
tr
0.07
0.08
0.08
µs
IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
td off
0.94
1.05
1.05
µs
IC = 450 A, VCE = 400 V
VGE = -8 V / +15 V
RGoff = 5.1 Ω
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
tf
0.04
0.05
0.06
µs
IC = 450 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGon = 2.4 Ω
di/dt (Tvj 25°C) = 5500 A/µs
di/dt (Tvj 150°C) = 5000 A/µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IC = 450 A, VCE = 400 V, LS = 20 nH
VGE = -8 V / +15 V
RGoff = 5.1 Ω
dv/dt (Tvj 25°C) = 3100 V/µs
dv/dt (Tvj 150°C) = 2500 V/µs
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
per IGBT
Thermal resistance, case to heatsink
per IGBT
λPaste = 1 W/(m·K) /
3)
nA
µs
Thermal resistance, junction to case
2)
400
mA
td on
VGE ≤ 15 V, VCC = 400 V
VCEmax = VCES -LsCE ·di/dt
1)
5
0.28
0.29
0.30
SC data
Temperature under switching conditions
nF
1.0
tP ≤ 6 µs, Tvj = 25°C
tP ≤ 3 µs, Tvj = 175°C
λgrease = 1 W/(m·K)
top continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
Eon
13.5
17.5
18.0
mJ
Eoff
23.5
29.0
30.0
mJ
4800
3900
ISC
A
RthJC
0.080 0.095 K/W
RthCH
0.0502)
Tvj op
-40
150
K/W
3)
150
175
°C
Verified by characterization / design not by test.
cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W
For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
3
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FS660R08A6P2FB
HybridPACK™ Drive Module
3
Diode, Inverter
3.1
Maximum Rated Values
Parameter
Conditions
Symbol
Value
Unit
Repetitive peak reverse voltage
Tvj = 25°C
VRRM
750
V
Implemented forward current
IFN
660
A
Continuous DC forward current
IF
4501)
A
Repetitive peak forward current
tP = 1 ms
I²t - value
VR = 0 V, tP = 10 ms, Tvj = 150°C
VR = 0 V, tP = 10 ms, Tvj = 175°C
3.2
1320
A
I²t
19000
16000
A²s
A²s
Characteristic Values
Forward voltage
Peak reverse recovery current
Recovered charge
Reverse recovery energy
min.
max.
1.65
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IF = 660 A, VGE = 0 V
IF = 660 A, VGE = 0 V
Tvj = 25°C
Tvj = 175°C
IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
IRM
250
350
370
A
IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Qr
20.0
40.0
45.0
µC
IF = 450 A, - diF/dt = 5000 A/µs (Tvj = 150°C)
VR = 400 V
VGE = -8 V
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
Erec
7.00
13.0
15.0
mJ
RthJC
0.125 0.150 K/W
RthCH
0.0502)
per diode
Thermal resistance, case to heatsink
per diode
λPaste = 1 W/(m·K) /
Temperature under switching conditions
typ.
1.45
1.30
1.25
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
IF = 450 A, VGE = 0 V
Thermal resistance, junction to case
4
IFRM
λgrease = 1 W/(m·K)
top continuous
for 10s within a period of 30s, occurence maximum 3000
times over lifetime
VF
V
1.60
1.45
Tvj op
NTC-Thermistor
-40
150
min.
K/W
3)
150
175
typ.
°C
max.
Parameter
Conditions
Symbol
Value
Unit
Rated resistance
TC = 25°C
R25
5.00
kΩ
Deviation of R100
TC = 100°C, R100 = 493 Ω
Power dissipation
TC = 25°C
B-value
R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))]
B-value
B-value
∆R/R
5
P25
5
%
20.0
mW
B25/50
3375
K
R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))]
B25/80
3411
K
R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))]
B25/100
3433
K
Specification according to the valid application note.
1)
2)
3)
Verified by characterization / design not by test.
cooler alpha = 1500 W/(m²K); RthHF_typ = 0,06 K/W
For Tvjop > 150°C: Baseplate temperature has to be limited to 125°C.
Final Data Sheet
4
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FS660R08A6P2FB
HybridPACK™ Drive Module
5
Module
Parameter
Conditions
Symbol
Value
Unit
Isolation test voltage
RMS, f = 0 Hz, t = 1 sec
VISOL
4.2
kV
Maximum RMS module terminal current
TF = 75°C, TCt = 105°C
TC = 85°C, TCt = 105°C
ItRMS
500
500
A
1)
Cu+Ni
Material of module baseplate
Al2O32)
Internal isolation
basic insulation (class 1, IEC 61140)
Creepage distance
terminal to heatsink
terminal to terminal
dCreep
9.0
9.0
mm
Clearance
terminal to heatsink
terminal to terminal
dClear
4.5
4.5
mm
CTI
Comperative tracking index
min.
Maximum pressure in cooling circuit
Tbaseplate < 40°C
Tbaseplate > 40°C
(relative pressure)
TC = 25 °C, per switch
Storage temperature
Mounting torque for modul mounting
3.03)
2.5
p
Stray inductance module
Module lead resistance, terminals - chip
> 200
typ. max.
Screw M4 baseplate to heatsink
Screw EJOT Delta PCB to frame
LsCE
8.0
nH
RCC'+EE'
0.75
mΩ
Tstg
-40
125
M
1.80
0.45
2.00 2.20
Nm
0.50 0.554)
G
Weight
bar
600
°C
g
1)
Ni plated Cu baseplate.
Improved Al2O3 ceramic.
According to application note AN-HPD-ASSEMBLY
4)
EJOT Delta PT WN 5451 30x10. Effective mounting torque according to application note AN-HPD-ASSEMBLY
2)
3)
Final Data Sheet
5
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FS660R08A6P2FB
HybridPACK™ Drive Module
6
Characteristics Diagrams
output characteristic IGBT,Inverter (typical)
IC = f (VCE)
VGE = 15 V
output characteristic IGBT,Inverter (typical)
IC = f (VCE)
Tvj = 150°C
1300
1300
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
1200
1100
1000
1000
900
900
800
800
700
700
IC [A]
1100
IC [A]
VGE = 19V
VGE = 17V
VGE = 15V
VGE = 13V
VGE = 11V
VGE = 9V
1200
600
600
500
500
400
400
300
300
200
200
100
100
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VCE [V]
transfer characteristic IGBT,Inverter (typical)
IC = f (VGE)
VCE = 20 V
0,0
0,4
0,8
1,2
1,6
2,0 2,4
VCE [V]
2,8
3,2
3,6
4,0
800
900
switching losses IGBT,Inverter (typical)
Eon = f (IC), Eoff = f (IC),
VGE = +15 V / -8 V, RGon = 2.4 Ω, RGoff = 5.1 Ω, VCE = 400 V
1300
70
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
1200
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
60
1100
1000
50
900
800
E [mJ]
IC [A]
40
700
600
30
500
400
20
300
200
10
100
0
0
5
Final Data Sheet
6
7
8
9
VGE [V]
10
11
12
0
6
100
200
300
400 500
IC [A]
600
700
V3.0, 2019-05-20
FS660R08A6P2FB
HybridPACK™ Drive Module
switching losses IGBT,Inverter (typical)
Eon = f (RG), Eoff = f (RG),
VGE = +15V / -8V, IC = 450 A, VCE = 400 V
transient thermal impedance IGBT,Inverter
ZthJC = f (t)
thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K)
140
1
Eon, Tvj = 150°C
Eoff, Tvj = 150°C
Eon, Tvj = 175°C
Eoff, Tvj = 175°C
120
ZthJC : IGBT
100
0,1
E [mJ]
ZthJC [K/W]
80
60
0,01
40
20
i:
1
2
3
4
ri[K/W]: 0,005 0,055 0,022 0,013
τi[s]:
0,001 0,03 0,25 1,5
0
0
2
4
6
8
10
12 14
RG [Ω]
16
18
20
22
0,001
0,001
24
reverse bias safe operating area IGBT,Inverter (RBSOA)
IC = f (VCE)
VGE = +15V / -8V, RGoff = 5,1 Ω, Tvj = 175°C
0,01
0,1
t [s]
1
10
capacity characteristic IGBT,Inverter (typical)
C = f(VCE)
VGE = 0 V, Tvj = 25°C, f = 1MHz
1400
100
1300
Cies
Coes
Cres
1200
1100
1000
10
900
C [nF]
IC [A]
800
700
600
500
1
400
300
IC, Modul
IC, Chip
200
100
0
0,1
0
Final Data Sheet
100
200
300
400
500
VCE [V]
600
700
800
0
100
200
300
400
500
VCE [V]
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FS660R08A6P2FB
HybridPACK™ Drive Module
gate charge characteristic IGBT,Inverter (typical)
VGE = f(QG)
VCE = 400 V, IC = 450 A, Tvj = 25°C
maximum allowed collector-emitter voltage
VCES = f(Tvj),
verified by characterization / design not by test
ICES = 1 mA for Tvj ≤ 25°C; ICES = 30 mA for Tvj > 25°C
15
800
QG
VCES
12
775
9
750
VCES [V]
VGE [V]
6
3
725
0
700
-3
675
-6
-9
0
1
2
3
4
650
-50
5
-25
0
25
50
QG [µC]
forward characteristic of Diode, Inverter (typical)
IF = f (VF)
75 100 125 150 175 200
Tvj [°C]
switching losses Diode, Inverter (typical)
Erec = f (IF),
RGon = 2.4 Ω, VCE = 400 V
1300
22
Tvj = 25°C
Tvj = 150°C
Tvj = 175°C
1200
Erec, Tvj = 150°C
Erec, Tvj = 175°C
20
1100
18
1000
16
900
14
700
E [mJ]
IF [A]
800
600
500
12
10
8
400
6
300
4
200
2
100
0
0
0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2
VF [V]
Final Data Sheet
0
8
100
200
300
400 500
IF [A]
600
700
800
900
V3.0, 2019-05-20
FS660R08A6P2FB
HybridPACK™ Drive Module
switching losses Diode, Inverter (typical)
Erec = f (RG),
IF = 450 A, VCE = 400 V
transient thermal impedance Diode, Inverter
ZthJC = f (t)
thermal grease 1W/(m*K), cooler alpha = 1500 W/(m²*K)
20
1
Erec, Tvj = 150°C
Erec, Tvj = 175°C
18
ZthJC : Diode
16
14
0,1
ZthJC [K/W]
E [mJ]
12
10
8
0,01
6
4
i:
1
2
3
4
ri[K/W]: 0,015 0,1 0,025 0,01
τi[s]:
0,001 0,03 0,25 1,5
2
0
0
2
4
6
8
10
12 14
RG [Ω]
16
18
20
22
0,001
0,001
24
0,01
0,1
t [s]
1
10
NTC-Thermistor-temperature characteristic (typical)
R = f (T)
100000
Rtyp
R[Ω]
10000
1000
100
0
Final Data Sheet
20
40
60
80
100
TC [°C]
120
140
160
9
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FS660R08A6P2FB
HybridPACK™ Drive Module
7
Circuit diagram
P1
P2
P3
T1
C1
C3
C5
T
T2
G1
G3
G5
E1
E3
E5
U
C2
T3
V
C4
W
T
C6
T4
G2
G4
G6
E2
E4
E6
T5
T
T6
N1
Final Data Sheet
N2
N3
10
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HybridPACK™ Drive Module
8
Package outlines
Final Data Sheet
11
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HybridPACK™ Drive Module
9
Label Codes
9.1
Module Code
Code Format
Data Matrix
Encoding
ASCII Text
Symbol Size
16x16
Standard
IEC24720 and IEC16022
Code Content
Content
Module Serial Number
Module Material Number
Production Order Number
Datecode (Production Year)
Datecode (Production Week)
Digit
1-5
6 - 11
12 - 19
20 - 21
22 - 23
Example (below)
71549
142846
55054991
15
30
Example
71549142846550549911530
9.2
Packing Code
Code Format
Code128
Encoding
Code Set A
Symbol Size
34 digits
Standard
IEC8859-1
Code Content
Content
Backend Construction Number
Production Lot Number
Serial Number
Date Code
Box Quantity
Identifier
X
1T
S
9D
Q
Digit
2-9
12 - 19
21 - 25
28 - 31
33 - 34
Example (below)
95056609
2X0003E0
754389
1139
15
Example
X950566091T2X0003E0S754389D1139Q15
Final Data Sheet
12
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FS660R08A6P2FB
HybridPACK™ Drive Module
Revision History
Major changes since previous revision
Revision History
Reference
Date
Description
V1.0
2017-05-08
Target datasheet
V2.0
2018-03-07
-
V3.0
2019-05-20
-
Final Data Sheet
13
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FS660R08A6P2FB
HybridPACK™ Drive Module
Terms & Conditions of usage
Edition 2018-08-01
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2018 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
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examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon
Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office
(http://www.infineon.com)
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Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the
nearest Infineon Technologies Office.
These components are not designed for “special applications” that demand extremely high reliability or safety such as aerospace, defense or life
support devices or systems (Class III medical devices). If you intend to use the components in any of these special applications, please contact
your local representative at International Rectifier HiRel Products, Inc. or the Infineon support (https://www.infineon.com/support) to review
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Infineon Technologies components may be used in special applications only with the express written approval of Infineon Technologies. Class
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Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION
FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor
Graphics Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO.,
MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ Openwave
Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun
Microsystems, Inc. SPANSION™ of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited.
VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of
WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex Limited.
Last update
Final Data Sheet
2011-11-11
14
V3.0, 2019-05-20
www.infineon.com
Published by Infineon Technologies AG
