FS75R12N2T7_B15
EconoPACK™2 module
EconoPACK™2 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC
Features
• Electrical features
- VCES = 1200 V
- IC nom = 75 A / ICRM = 150 A
- TRENCHSTOPTM IGBT7
- Low VCE,sat
- Overload operation up to 175°C
• Mechanical features
- High power and thermal cycling capability
- Integrated NTC temperature sensor
- Copper base plate
- Al2O3 substrate with low thermal resistance
- Solder contact technology
- Standard housing
Potential applications
• Auxiliary inverters
• Motor drives
• Servo drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.00
2021-12-16
FS75R12N2T7_B15
EconoPACK™2 module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
5
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
6
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
8
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Datasheet
2
Revision 1.00
2021-12-16
FS75R12N2T7_B15
EconoPACK™2 module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 1 min
Material of module
baseplate
Values
Unit
2.5
kV
Cu
Internal isolation
basic insulation (class 1, IEC 61140)
Al2O3
Creepage distance
dCreep
terminal to heatsink
10.0
mm
Clearance
dClear
terminal to heatsink
7.5
mm
Comparative tracking index
CTI
Relative thermal index
(electrical)
RTI
Table 2
>200
housing
Symbol Note or test condition
Min.
Stray inductance module
Module lead resistance,
terminals - chip
Storage temperature
LsCE
RCC'+EE'
M
Weight
G
Table 3
TC=25°C, per switch
Tstg
Mounting torque for module
mounting
2
Values
Unit
Typ.
Max.
17
nH
3.3
mΩ
-40
125
°C
3
6
Nm
- Mounting according to M5, Screw
valid application note
180
g
Values
Unit
Tvj = 25 °C
1200
V
TC = 100 °C
75
A
150
A
±20
V
The current under continuous operation is limited to 50A rms per connector pin.
IGBT, Inverter
Maximum rated values
Parameter
Symbol Note or test condition
Collector-emitter voltage
VCES
Continuous DC collector
current
ICDC
Tvj max = 175 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Datasheet
°C
Characteristic values
Parameter
Note:
140
3
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FS75R12N2T7_B15
EconoPACK™2 module
2 IGBT, Inverter
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Collector-emitter saturation
voltage
Gate threshold voltage
Gate charge
VCE sat
VGEth
QG
IC = 75 A, VGE = 15 V
Unit
Typ.
Max.
Tvj = 25 °C
1.55
1.80
V
Tvj = 125 °C
1.69
Tvj = 175 °C
1.77
6.45
V
IC = 1.28 mA, VCE = VGE, Tvj = 25 °C
VGE = ±15 V, VCE = 600 V
5.15
5.80
1.25
µC
2
Ω
Internal gate resistor
RGint
Tvj = 25 °C
Input capacitance
Cies
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
15.1
nF
Reverse transfer capacitance
Cres
f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
0.053
nF
Collector-emitter cut-off
current
ICES
VCE = 1200 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 75 A, VCE = 600 V,
VGE = ±15 V, RGon = 5.6 Ω
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on energy loss per
pulse
Turn-off energy loss per
pulse
SC data
tr
tdoff
tf
Eon
Eoff
ISC
Tvj = 25 °C
Tvj = 25 °C
0.164
Tvj = 125 °C
0.178
Tvj = 175 °C
0.185
Tvj = 25 °C
0.048
Tvj = 125 °C
0.053
Tvj = 175 °C
0.057
Tvj = 25 °C
0.300
Tvj = 125 °C
0.380
Tvj = 175 °C
0.420
Tvj = 25 °C
0.120
Tvj = 125 °C
0.200
Tvj = 175 °C
0.270
IC = 75 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGon = 5.6 Ω, di/dt =
1200 A/µs (Tvj = 175 °C)
Tvj = 25 °C
7.96
Tvj = 125 °C
10.8
Tvj = 175 °C
12.3
IC = 75 A, VCE = 600 V,
Lσ = 35 nH, VGE = ±15 V,
RGoff = 5.6 Ω, dv/dt =
3200 V/µs (Tvj = 175 °C)
Tvj = 25 °C
5.02
Tvj = 125 °C
7.68
Tvj = 175 °C
9.46
VGE ≤ 15 V, VCC = 800 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 8 µs,
Tvj=150 °C
260
tP ≤ 7 µs,
Tvj=175 °C
250
IC = 75 A, VCE = 600 V,
VGE = ±15 V, RGon = 5.6 Ω
IC = 75 A, VCE = 600 V,
VGE = ±15 V, RGoff = 5.6 Ω
IC = 75 A, VCE = 600 V,
VGE = ±15 V, RGoff = 5.6 Ω
0.014
mA
100
nA
µs
µs
µs
µs
mJ
mJ
A
(table continues...)
Datasheet
4
Revision 1.00
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FS75R12N2T7_B15
EconoPACK™2 module
3 Diode, Inverter
Table 4
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heat sink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
3
Typ.
Unit
Max.
0.475
0.141
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continuous DC forward
current
IF
Repetitive peak forward
current
IFRM
I2t - value
Table 6
I2t
Values
Unit
1200
V
75
A
150
A
Tvj = 125 °C
1150
A²s
Tvj = 175 °C
740
Tvj = 25 °C
tP = 1 ms
tP = 10 ms, VR = 0 V
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Forward voltage
Peak reverse recovery
current
Recovered charge
VF
IRM
Qr
Unit
Typ.
Max.
Tvj = 25 °C
1.72
2.10
Tvj = 125 °C
1.59
Tvj = 175 °C
1.52
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1200 A/µs (Tvj = 175 °C)
Tvj = 25 °C
43
Tvj = 125 °C
56
Tvj = 175 °C
65
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1200 A/µs (Tvj = 175 °C)
Tvj = 25 °C
4.94
Tvj = 125 °C
10.2
Tvj = 175 °C
13.7
IF = 75 A, VGE = 0 V
V
A
µC
(table continues...)
Datasheet
5
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2021-12-16
FS75R12N2T7_B15
EconoPACK™2 module
4 NTC-Thermistor
Table 6
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Reverse recovery energy
Erec
VR = 600 V, IF = 75 A,
VGE = -15 V, -diF/dt =
1200 A/µs (Tvj = 175 °C)
Tvj = 25 °C
1.45
Tvj = 125 °C
3.32
Tvj = 175 °C
4.62
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heat sink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Note:
4
Typ.
Unit
Max.
mJ
0.708
0.153
-40
K/W
K/W
175
°C
Tvj op > 150°C is allowed for operation at overload conditions. For detailed specifications, please refer to
AN2018-14.
NTC-Thermistor
Table 7
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Rated resistance
R25
Deviation of R100
ΔR/R
Power dissipation
P25
TNTC = 25 °C
Typ.
Unit
Max.
5
TNTC = 100 °C, R100 = 493 Ω
-5
TNTC = 25 °C
kΩ
5
%
20
mW
B-value
B25/50
R2 = R25 exp[B25/50(1/T2-1/(298,15 K))]
3375
K
B-value
B25/80
R2 = R25 exp[B25/80(1/T2-1/(298,15 K))]
3411
K
B-value
B25/100
R2 = R25 exp[B25/100(1/T2-1/(298,15 K))]
3433
K
Note:
Datasheet
Specification according to the valid application note.
6
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FS75R12N2T7_B15
EconoPACK™2 module
5 Characteristics diagrams
5
Characteristics diagrams
Output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
Output characteristic field (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 175 °C
150
150
125
125
100
100
75
75
50
50
25
25
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0
Transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE = ± 15 V
150
50
45
125
40
35
100
30
75
25
20
50
15
10
25
5
0
0
5
Datasheet
6
7
8
9
10
11
12
13
0
7
15
30
45
60
75
90
105 120 135 150
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FS75R12N2T7_B15
EconoPACK™2 module
5 Characteristics diagrams
Switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 75 A, VCE = 600 V, VGE = ± 15 V
Switching times (typical), IGBT, Inverter
t = f(IC)
RGoff = 5.6 Ω, RGon = 5.6 Ω, VCE = 600 V, VGE = ± 15 V, Tvj =
175 °C
10
60
55
50
45
1
40
35
30
25
20
0.1
15
10
5
0
0.01
0
5
10 15 20 25 30 35 40 45 50 55 60
0
Switching times (typical), IGBT, Inverter
t = f(RG)
IC = 75 A, VCE = 600 V, VGE = ± 15 V, Tvj = 175 °C
15
30
45
60
75
90
105 120 135 150
Transient thermal impedance , IGBT, Inverter
Zth = f(t)
10
1
1
0.1
0.1
0.01
0
Datasheet
5
0.01
0.001
10 15 20 25 30 35 40 45 50 55 60
8
0.01
0.1
1
10
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FS75R12N2T7_B15
EconoPACK™2 module
5 Characteristics diagrams
Reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 5.6 Ω, VGE = ±15 V, Tvj = 175 °C
Voltage slope (typical), IGBT, Inverter
dv/dt = f(RG)
IC = 75 A, VCE = 600 V, VGE = ±15 V, Tvj = 25 °C
200
7
175
6
150
5
125
4
100
3
75
2
50
1
25
0
0
0
200
400
600
800
1000
1200
1400
0
Capacity characteristic (typical), IGBT, Inverter
C = f(VCE)
f = 100 kHz, VGE = 0 V, Tvj = 25 °C
5
10
15
20
25
30
35
40
45
50
55
60
Gate charge characteristic (typical), IGBT, Inverter
VGE = f(QG)
IC = 75 A, Tvj = 25 °C
100
15
10
10
5
1
0
-5
0.1
-10
-15
0.01
0
Datasheet
10
20
30
40
50
60
70
80
90
100
0.0
9
0.2
0.4
0.6
0.8
1.0
1.2
1.4
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FS75R12N2T7_B15
EconoPACK™2 module
5 Characteristics diagrams
Forward characteristic (typical), Diode, Inverter
IF = f(VF)
Switching losses (typical), Diode, Inverter
Erec = f(IF)
RGon = 5.6 Ω, VR = 600 V
150
6
125
5
100
4
75
3
50
2
25
1
0
0
0.0
0.5
1.0
1.5
2.0
2.5
0
Switching losses (typical), Diode, Inverter
Erec = f(RG)
IF = 75 A, VR = 600 V
15
30
45
60
75
90
105 120 135 150
Transient thermal impedance, Diode, Inverter
Zth = f(t)
1
6
5
4
3
0.1
2
1
0
0
Datasheet
5
10 15
0.01
0.001
20 25 30 35 40 45 50 55 60
10
0.01
0.1
1
10
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EconoPACK™2 module
5 Characteristics diagrams
Temperature characteristic (typical), NTC-Thermistor
R = f(TNTC)
100000
10000
1000
100
10
0
Datasheet
25
50
75
100
125
150
175
11
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FS75R12N2T7_B15
EconoPACK™2 module
6 Circuit diagram
6
Circuit diagram
J
Figure 1
Datasheet
12
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FS75R12N2T7_B15
EconoPACK™2 module
7 Package outlines
7
Package outlines
In fin e o n
Figure 2
Datasheet
13
Revision 1.00
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FS75R12N2T7_B15
EconoPACK™2 module
8 Module label code
8
Module label code
Module label code
Code format
Data Matrix
Barcode Code128
Encoding
ASCII text
Code Set A
Symbol size
16x16
23 digits
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
Digit
1–5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
2
Datasheet
14
Revision 1.00
2021-12-16
FS75R12N2T7_B15
EconoPACK™2 module
Revision history
Revision history
Document revision
Date of release
Description of changes
1.00
2021-12-16
Final datasheet
Datasheet
15
Revision 1.00
2021-12-16
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-12-16
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-ABA335-001
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
any applications where a failure of the product or
any consequences of the use thereof can reasonably
be expected to result in personal injury.