FZ1000R33HE3

FZ1000R33HE3 IHM-B module IHM-B module with fast Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 3300 V - IC nom = 1000 A / ICRM = 2000 A - Unbeatable robustness - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - VCE,sat with positive temperature coefficient • Mechanical features - AlSiC base plate for increased thermal cycling capability - Package with CTI > 600 - IHM B housing - Isolated base plate Potential applications • • • • • • Chopper applications Medium-voltage converters Motor drives Traction drives UPS systems Wind turbines Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 6.0 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV 2100 V DC stability VCE(D) Tvj=25°C, 100 Fit Material of module baseplate AlSiC Creepage distance dCreep terminal to heatsink 32.2 mm Clearance dClear terminal to heatsink 19.1 mm Comparative tracking index Table 2 CTI >600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module Module lead resistance, terminals - chip Storage temperature LsCE RCC'+EE' TC=25°C, per switch Tstg Typ. Unit Max. 9 nH 0.19 mΩ -40 150 °C Mounting torque for module mounting M - Mounting according to M6, Screw valid application note 4.25 5.75 Nm Terminal connection torque M - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 Weight 2 Table 3 G g Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 TC = 95 °C 1000 A 2000 A ±20 V IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Datasheet 800 3 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 2 IGBT, Inverter Table 4 Characteristic values Parameter Symbol Note or test condition Values Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 1000 A, VGE = 15 V Unit Typ. Max. Tvj = 25 °C 2.55 3.10 Tvj = 125 °C 3.00 3.45 Tvj = 150 °C 3.15 IC = 48 mA, VCE = VGE, Tvj = 25 °C 5.20 VGE = ±15 V, VCE = 1800 V 5.80 6.40 V V 28 µC Internal gate resistor RGint Tvj = 25 °C 0.63 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 190 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4 nF Collector-emitter cut-off current ICES VCE = 3300 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 1000 A, VCE = 1800 V, Tvj = 25 °C VGE = ±15 V, Tvj = 125 °C RGon = 0.71 Ω, Tvj = 150 °C CGE = 220 nF 0.350 IC = 1000 A, VCE = 1800 V, Tvj = 25 °C VGE = ±15 V, Tvj = 125 °C RGon = 0.71 Ω, Tvj = 150 °C CGE = 220 nF 0.350 IC = 1000 A, VCE = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 2.3 Ω, Tvj = 125 °C CGE = 220 nF Tvj = 150 °C 3.000 IC = 1000 A, VCE = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 2.3 Ω, Tvj = 125 °C CGE = 220 nF Tvj = 150 °C 0.300 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on time (resistive load) Turn-on energy loss per pulse tr tdoff tf ton_R Eon IC = 500 A, VCE = 2000 V, VGE = ±15 V, RGon = 0.71 Ω, CGE = 220 nF Tvj = 25 °C Tvj = 25 °C IC = 1000 A, VCE = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.71 Ω, Tvj = 150 °C CGE = 220 nF, di/dt = 3000 A/µs (Tvj = 150 °C) 5 mA 400 nA µs 0.380 0.380 µs 0.380 0.380 µs 3.200 3.200 µs 0.350 0.350 1.30 µs 1250 mJ 1700 1950 (table continues...) Datasheet 4 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse SC data Eoff ISC IC = 1000 A, VCE = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGoff = 2.3 Ω, Tvj = 150 °C CGE = 220 nF, dv/dt = 2100 V/µs (Tvj = 150 °C) 1050 VGE ≤ 15 V, VCC = 2500 V, VCEmax=VCES-LsCE*di/dt 4200 RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Max. mJ 1400 1550 tP ≤ 10 µs, Tvj=150 °C Thermal resistance, junction to case 3 Typ. Unit A 11.1 14.5 -40 K/kW K/kW 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 1000 A 2000 A Tvj = 125 °C 260 kA²s Tvj = 150 °C 245 tP = 1 ms tP = 10 ms, VR = 0 V Tvj = 150 °C 1600 kW 10 µs Values Unit Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF IF = 1000 A, VGE = 0 V Typ. Max. Tvj = 25 °C 3.10 3.85 Tvj = 125 °C 2.75 3.25 Tvj = 150 °C 2.65 V (table continues...) Datasheet 5 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current Recovered charge Reverse recovery energy IRM Qr Erec VR = 1800 V, IF = 1000 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) Tvj = 25 °C 1000 Tvj = 125 °C 1200 Tvj = 150 °C 1250 VR = 1800 V, IF = 1000 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) Tvj = 25 °C 450 Tvj = 125 °C 900 Tvj = 150 °C 1050 VR = 1800 V, IF = 1000 A, VGE = -15 V, -diF/dt = 3000 A/µs (Tvj = 150 °C) Tvj = 25 °C 450 Tvj = 125 °C 1100 Tvj = 150 °C 1300 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Datasheet Typ. Unit Max. A µC mJ 19.8 16.5 -40 6 K/kW K/kW 150 °C Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 4 Characteristics diagrams 4 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 2000 2000 1800 1800 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 2.3 Ω, RGon = 0.71 Ω, CGE = 220 nF, VCE = 1800 V, VGE = -15 / 15 V 2000 7000 1800 6000 1600 5000 1400 1200 4000 1000 3000 800 600 2000 400 1000 200 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 7 200 400 600 800 1000 1200 1400 1600 1800 2000 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 4 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 1000 A, CGE = 220 nF, VCE = 1800 V, VGE = -15 / 15 V transient thermal impedance , IGBT, Inverter Zth = f(t) 100 10000 9000 8000 7000 10 6000 5000 4000 1 3000 2000 1000 0 0 1 2 3 4 5 6 7 8 0.1 0.001 9 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) Tvj = 150 °C, RGoff = 2.3 Ω, VGE = ±15 V, CGE = 220 nF 0.01 0.1 1 10 forward characteristic (typical), Diode, Inverter IF = f(VF) 2500 2000 1800 2000 1600 1400 1500 1200 1000 1000 800 600 500 400 200 0 0 0 Datasheet 500 1000 1500 2000 2500 3000 3500 0.0 8 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 4 Characteristics diagrams switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 1800 V, RGon = RGon(IGBT) switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 1800 V, IF = 1000 A 2000 2000 1800 1800 1600 1600 1400 1400 1200 1200 1000 1000 800 800 600 600 400 400 200 200 0 0 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 transient thermal impedance , Diode, Inverter Zth = f(t) 2 4 6 8 10 12 14 3000 3500 safe operation area (SOA), Diode, Inverter IR = f(VR) Tvj = 150 °C 100 2500 2000 10 1500 1000 1 500 0.1 0.001 Datasheet 0 0.01 0.1 1 0 10 9 500 1000 1500 2000 2500 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 5 Circuit diagram 5 Circuit diagram Figure 1 Datasheet 10 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 6 Package outlines 6 Package outlines Figure 2 Datasheet 11 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 12 Revision 1.10 2021-10-22 FZ1000R33HE3 IHM-B module Revision history Revision history Document revision Date of release Description of changes V1.0 2007-10-11 Target datasheet V1.1 2007-11-02 Target datasheet V1.2 2008-02-06 Target datasheet V2.0 2008-10-31 Preliminary datasheet V2.1 2010-04-26 Preliminary datasheet V2.2 2010-07-16 Preliminary datasheet V3.0 2013-08-12 Final datasheet V3.1 2013-12-11 Final datasheet V3.2 2016-12-06 Final datasheet V3.3 2018-07-12 Final datasheet V3.4 2019-07-24 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-10-22 Final datasheet Datasheet 13 Revision 1.10 2021-10-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAV703-012 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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