FZ1200R12KF4

European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 18 screwing depth max. 8 61,5 M8 31,5 130 114 C C E E E C 7 28 16,5 G M4 2,5 18,5 external connection to be done C C C G E E E external connection to be done A15/97 Mod-E/ 21.Jan 1998 G.Schulze FZ 1200 R 12 KF4 Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung Kollektor-Dauergleichstrom Periodischer Kollektor Spitzenstrom Gesamt-Verlustleistung Gate-Emitter-Spitzenspannung Dauergleichstrom Periodischer Spitzenstrom Isolations-Prüfspannung Höchstzulässige Werte / Maximum rated values collector-emitter voltage DC-collector current repetitive peak collctor current total power dissipation gate-emitter peak voltage DC forward current repetitive peak forw. current insulation test voltage VCES IC ICRM Ptot VGE IF IFRM VISOL min. 4,5 typ. 2,7 3,3 5,5 90 16 100 0,7 0,8 0,9 1,0 0,10 0,15 170 190 1200 1200 2400 7800 ± 20 1200 2400 2,5 max. 3,2 3,9 6,5 200 400 400 V A A W V A A kV tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current gate leakage current gate leakage current turn-on time (inductive load) iC=1,2kA, vGE=15V, t vj=25°C iC=1,2kA, vGE=15V, t vj=125°C iC=48mA, vCE=vGE, tvj=25°C fO=1MHz,tvj=25°C,vCE=25V, v GE=0V vCE=1200V, vGE=0V, t vj=25°C vCE=1200V, vGE=0V, t vj=125°C vCE=0V, v GE=20V, tvj=25°C vCE=0V, v EG=20V, tvj=25°C iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA,vCE=600V vL = ±15V, R G = 0,82 , tvj=25° vL = ±15V, R G = 0,82 , tvj=125° iC=1,2kA, vCE=600V, L s=70nH vL=±15V,R G=0,82 ,T vj=125°C iC=1,2kA, vCE=600V, L s=70nH vL=±15V,R G=0,82 ,T vj=125°C vCE sat vGE(th) Cies iCES iGES iEGS ton V V V nF mA mA nA nA ts - - µs - µs - µs - µs - µs - µs - mWs - mWs Speicherzeit (induktive Last) storage time (inductive load) Fallzeit (induktive Last) fall time (inductive load) tf Einschaltverlustenergie pro Puls Abschaltverlustleistung pro Puls turn-on energy loss per puls turn-off energy loss per puls Eon Eoff Charakteristische Werte / Characteristic values Inversdiode / Inverse diode Durchlaßspannung Rückstromspitze forward voltage peak reverse recovery current iF=1,2kA, vGE=0V, t vj=25°C iF=1,2kA, vGE=0V, t vj=125°C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/µs, tvj = 25°C t vj = 125°C iF=1,2kA, vRM=600V, v EG = 10V -diF/dt = 6 kA/µs, tvj = 25°C tvj = 125°C vF IRM 2,2 2,0 400 700 50 150 2,7 V 2,5 V -A -A - µAs - µAs Sperrverzögerungsladung recovered charge Qr Thermische Eigenschaften / Thermal properties Innerer Wärmewiderstand Übergangs-Wärmewiderstand Höchstzul. Sperrschichttemperatur Betriebstemperatur Lagertemperatur thermal resistance, junction to case thermal resistance, case to heatsink max. junction temperature operating temperature storage temperature Transistor / transistor, DC Transistor,DC,pro Zweig/per arm pro Modul / per Module pro Modul / per Module Transistor / transistor RthJC RthCK tvj max tc op tstg 0,016 0,032 0,008 150 -40...+125 -40...+125 °C/W °C/W °C/W °C °C °C Mechanische Eigenschaften / Mechanical properties Innere Isolation Anzugsdrehmoment f. mech. Befestigung Anzugsdrehmoment f. elektr. Anschlüsse Gewicht internal insulation mounting torque terminal connection torque weight terminals M6 / tolerance +/-15% terminals M4 / tolerance +/-15% terminals M8 M1 M2 G AI2O3 5 2 8...10 ca. 1500 Nm Nm Nm g Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection tfg = 10 µs VCC = 750 V vL = ±15 V vCEM = 900 V RGF = RGR = 0,82 iCMK1 10000 A tvj = 125°C iCMK2 8000 A Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions v CEM = VCES - 15nH x |dic/dt| Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. FZ 1200 R12 KF4 2500 2500 VGE=20V 15V 12V iC [A] 2000 iC [A] 2000 10V 1500 1500 9V 1000 1000 8V 500 500 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v CE [V] 4.5 5.0 FZ1200R12KF4 FZ1200R12KF4 Bild/Fig. 1 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) VGE = 15V ----- T vj = 25 °C ___ Tvj = 125 °C 2500 t vj = 125 °C 25 °C 2500 Bild/Fig. 2 Kollektor-Emitter-Spannung im Sättigungsbereich (typisch) Collector-emitter-voltage in saturation region (typical) Tvj = 125 °C iC [A] 2000 iC [A] 2000 1500 1500 1000 1000 500 500 0 5 6 7 8 9 10 v GE [V] 11 12 0 0 200 400 600 800 1000 1200 1400 FZ1200R12KF4 FZ1200R12KF4 v CE [V] Bild/Fig. 3 Übertragungscharakteristik (typisch) Transfer characteristic (typical) VCE = 20 V Bild/Fig. 4 Rückwärts-Arbeitsbereich Reverse biased safe operating area tvj = 125 °C, vLF = vLR = 15 V, RG = 0,82 FZ 1200 R12 KF4 10-1 2500 6 Z(th)JC [°C/W] 3 2 Diode iF [A] 2000 IGBT 1500 10-2 1000 5 3 2 500 10-3 -3 10 2 4 10-2 2 4 10-1 2 4 100 2 4 101 0 0.5 FZ1200R12KF4 1.0 1.5 2.0 2.5 v F [V] 3.0 FZ1200R12KF4 t [s ] Bild/Fig. 5 Transienter innerer Wärmewiderstand (DC) Transient thermal impedance (DC) Bild/Fig. 6 Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of the inverse diode (typical) tvj = 25 °C tvj = 125 °C Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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