FZ1200R33KF2-B5

Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode Isolations-Prüfspannung insulation test voltage Teilentladungs-Aussetzspannung partial discharge extinction voltage tP = 1 ms T vj = 25°C T vj = -25°C T C = 80°C T C = 25 °C tP = 1 ms, T C = 80°C VCES VCES IC,nom. IC ICRM 3300 3300 1200 2000 2400 V V A A A T C=25°C, Transistor Ptot 14,7 kW VGES +/- 20V V IF 1200 A IFRM 2400 A VR = 0V, tp = 10ms, T vj = 125°C I2t 444 k A2s T vj = 125°C PRQM 1200 kW RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Gateladung gate charge Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 1200A, VGE = 15V, Tvj = 25°C IC = 1200A, VGE = 15V, Tvj = 125°C IC = 120 mA, VCE = VGE, T vj = 25°C VGE(th) VCE sat min. 4,2 typ. 3,40 4,30 5,1 max. 4,25 5,00 6,0 V V V f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V Cies - 150 - nF f = 1MHz, Tvj = 25°C, VCE = 25V, VGE = 0V Cres - 8 - nF VGE = -15V ... + 15V QG - 22 - µC VCE = 3300V, VGE = 0V, Tvj = 25°C ICES - - 5 mA VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA prepared by: Alfons Wiesenthal approved by: Christoph Lübke date of publication : 2002-10-31 revision: 2.0 1 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 1200 A, VCE = 1800V VGE = ±15V, RG = 2,7 Ω , CGE = 220nF, T vj = 25°C VGE = ±15V, RG = 2,7 Ω , CGE = 220nF, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 1200 A, VCE = 1800V VGE = ±15V, RG = 2,7 Ω , CGE = 220nF, T vj = 25°C VGE = ±15V, RG = 2,7 Ω , CGE = 220nF, T vj = 125°C Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 1200 A, VCE = 1800V VGE = ±15V, RG = 1,8 Ω , CGE = 220nF, T vj = 25°C VGE = ±15V, RG = 1,8 Ω , CGE = 220nF, T vj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 1200 A, VCE = 1800V VGE = ±15V, RG = 1,8 Ω , CGE = 220nF, T vj = 25°C VGE = ±15V, RG = 1,8 Ω , CGE = 220nF, T vj = 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T C = 25°C IC = 1200 A, VCE = 1800V, VGE = 15V RG = 1,5 Ω , CGE = 220 nF, Tvj = 125°C, LS = 40nH IC = 1200 A, VCE = 1800V, VGE = 15V RG = 1,8 Ω , CGE = 220 nF, Tvj = 125°C, LS = 40nH tP ≤ 10µsec, VGE ≤ 15V T Vj≤125°C, VCC=2500V, VCEmax=VCES -LsCE ·dI/dt ISC LsCE 6000 18 A nH Eoff 1600 mWs Eon 2900 mWs tf 0,20 0,20 µs µs td,off 1,90 2,10 µs µs tr 0,45 0,48 µs µs td,on 0,70 0,65 µs µs min. typ. max. RCC'+EE' - 0,12 - mΩ Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 1200 A, VGE = 0V, Tvj = 25°C IF = 1200 A, VGE = 0V, Tvj = 125°C IF = 1200 A, - diF/dt = 4600 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 1200 A, - diF/dt = 4600 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 1200 A, - diF/dt = 4600 A/µsec VR = 1800V, VGE = -10V, Tvj = 25°C VR = 1800V, VGE = -10V, Tvj = 125°C Erec 680 1400 mWs mWs Qr 710 1320 µAs µAs IRM 1250 1350 A A VF min. - typ. 2,80 2,80 max. 3,50 3,50 V V 2 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode/Diode, DC pro Modul / per module λ Paste = 1 W/m*K / λ grease = 1 W/m*K RthCK RthJC - typ. 0,006 max. 0,0085 0,0170 K/W K/W K/W T vj max - - 150 °C T vj op -40 - 125 °C T stg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight Schraube M6 / screw M6 Anschlüsse / terminals M4 Anschlüsse / terminals M8 M M M G 4,25 1,8 8 1400 AlSiC AlN 56 mm 26 mm > 600 - 5,75 2,1 10 Nm Nm Nm g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Ausgangskennlinie (typisch) Output characteristic (typical) I = f (VCE) C VGE = 15V 2400 2000 Tvj = 25°C Tvj = 125°C 1600 IC [A] 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 2400 I = f (VCE) C Tvj = 125°C 2000 VGE = 8V VGE = 9V VGE = 10V 1600 VGE = 12V VGE = 15V VGE = 20V IC [A] 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 VCE [V] 4 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Übertragungscharakteristik (typisch) Transfer characteristic (typical) I = f (VGE) C VCE = 20V 2400 Tvj = 25°C Tvj = 125°C 2000 1600 IC [A] 1200 800 400 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 2400 Tvj = 25°C I = f (VF) F 2000 Tvj = 125°C 1600 IF [A] 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VF [V] 5 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Tvj=125°C, VCE = 1800V, VGE=±15V, RGon = 1,5 Ω , RGoff = 1,8 Ω , CGE = 220 nF Schaltverluste (typisch) Switching losses (typical) 10000 9000 8000 7000 E [mJ] 6000 5000 4000 3000 2000 1000 0 0 300 600 Eon Eoff Erec 900 1200 1500 1800 2100 2400 IC [A] Schaltverluste (typisch) Switching losses (typical) 12000 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) Tvj = 125°C, IC = 1200 A , VCE = 1800V , VGE = ±15V, CGE = 220nF 10000 8000 E [mJ] 6000 4000 2000 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 RG [Ω ] 6 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data VGE = ±15V, RG,off = 1,8Ω , CGE = 220 nF Tvj= 125°C Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) 3000 2400 1800 IC [A] 1200 IC,Modul IC,Chip 600 0 0 500 1000 1500 2000 2500 3000 3500 VCE [V] Sicherer Arbeitsbereich Diode (SOA) safe operation area Diode (SOA) 3000 Tvj= 125°C 2400 1800 IR [A] 1200 600 0 0 500 1000 1500 2000 2500 3000 3500 VR [V] 7 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Transienter Wärmewiderstand Transient thermal impedance 0,1 Z thJC = f (t) Zth: IGBT Zth: Diode 0,01 ZthJC [K / W] 0,001 0,0001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] : IGBT τi [sec] : IGBT ri [K/kW] : Diode τi [sec] : Diode 1 3,83 0,03 7,65 0,03 2 2,13 0,10 4,25 0,10 3 0,51 0,30 1,02 0,30 4 2,04 1,00 4,08 1,00 8 (9) DB_FZ1200R33KF2 B5_2.0.xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2_B5 vorläufige Daten preliminary data Äußere Abmessungen / extenal dimensions 9 (9) DB_FZ1200R33KF2 B5_2.0.xls