FZ1200R45KL3B5NOSA1

FZ1200R45KL3_B5 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 4500 V - IC nom = 1200 A / ICRM = 2400 A - High DC stability - High dynamic robustness - Low VCE,sat - Trench IGBT 3 - VCE,sat with positive temperature coefficient - High short-circuit capability • Mechanical features - High creepage and clearance distances - AlSiC base plate for increased thermal cycling capability - Package with enhanced insulation of 10.4 kV AC 60 s - Package with CTI > 600 - Isolated base plate Potential applications • • • • • High-power converters Medium-voltage converters Motor drives Multi-level inverter Traction drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Datasheet 2 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 10.4 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 3.5 kV 3000 V DC stability VCE(D) Tvj=25°C, 100 Fit Material of module baseplate AlSiC Internal isolation basic insulation (class 1, IEC 61140) AlN Creepage distance dCreep terminal to heatsink 64.0 mm Creepage distance dCreep terminal to terminal 56.0 mm Clearance dClear terminal to heatsink 40.0 mm Clearance dClear terminal to terminal 26.0 mm Comparative tracking index Table 2 CTI >600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module Module lead resistance, terminals - chip Storage temperature LsCE RCC'+EE' TC=25°C, per switch Tstg Typ. Unit Max. 18 nH 0.12 mΩ -55 125 °C Mounting torque for module mounting M - Mounting according to M6, Screw valid application note 4.25 5.75 Nm Terminal connection torque M - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 Weight Note: 2 Table 3 G 1400 g Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 The maximum allowed dv/dt measured between 0,6 and 1×Vce is 2400V/µs. IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES (table continues...) Datasheet 3 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 4 TC = 80 °C Values Unit 1200 A 2400 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage VCE sat Gate threshold voltage VGEth Gate charge QG IC = 1200 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.50 2.85 Tvj = 125 °C 3.10 3.70 6 6.60 IC = 105 mA, VCE = VGE, Tvj = 25 °C 5.40 V V VGE = ±15 V, VCE = 2800 V 39.5 µC Internal gate resistor RGint Tvj = 25 °C 0.75 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 280 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 4.7 nF Collector-emitter cut-off current ICES VCE = 4500 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 1200 A, VCE = 2800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.68 Ω Tvj = 125 °C 0.580 IC = 1200 A, VCE = 2800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.68 Ω Tvj = 125 °C 0.190 IC = 1200 A, VCE = 2800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 5.1 Ω Tvj = 125 °C 6.600 IC = 1200 A, VCE = 2800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 5.1 Ω Tvj = 125 °C 0.350 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on time (resistive load) tr tdoff tf Tvj = 25 °C 5 mA 400 nA µs 0.600 µs 0.220 µs 6.900 µs 0.450 ton_R IC = 500 A, VCE = 2000 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.68 Ω 1.73 µs Turn-on energy loss per pulse Eon IC = 1200 A, VCE = 2800 V, Tvj = 25 °C Lσ = 110 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.68 Ω, di/dt = 5000 A/µs (Tvj = 125 °C) 4600 Turn-off energy loss per pulse Eoff IC = 1200 A, VCE = 2800 V, Tvj = 25 °C Lσ = 110 nH, VGE = ±15 V, Tvj = 125 °C RGoff = 5.1 Ω, dv/dt = 2000 V/µs (Tvj = 125 °C) 4200 mJ 6150 mJ 5100 (table continues...) Datasheet 4 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. SC data ISC VGE ≤ 15 V, VCC = 2800 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj=125 °C Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op 3 Typ. Unit Max. 6900 A 7.40 9.00 -50 K/kW K/kW 125 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 4500 V Tvj = 25 °C 4500 Tvj = 125 °C 4500 tP = 1 ms tP = 10 ms, VR = 0 V Tvj = 125 °C Tvj = 125 °C 1200 A 2400 A 570 kA²s 2400 kW 10 µs Values Unit Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF Peak reverse recovery current IRM Recovered charge Qr IF = 1200 A, VGE = 0 V VR = 2800 V, IF = 1200 A, VGE = -15 V, -diF/dt = 5000 A/µs (Tvj = 125 °C) VR = 2800 V, IF = 1200 A, VGE = -15 V, -diF/dt = 5000 A/µs (Tvj = 125 °C) Typ. Max. Tvj = 25 °C 2.50 3.10 Tvj = 125 °C 2.50 3.00 Tvj = 25 °C 1500 Tvj = 125 °C 1700 Tvj = 25 °C 1150 Tvj = 125 °C 2100 V A µC (table continues...) Datasheet 5 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Reverse recovery energy Erec VR = 2800 V, IF = 1200 A, VGE = -15 V, -diF/dt = 5000 A/µs (Tvj = 125 °C) Tvj = 25 °C 1750 Tvj = 125 °C 3550 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Datasheet Typ. Unit Max. mJ 17.0 14.0 -50 6 K/kW K/kW 125 °C Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 4 Characteristics diagrams 4 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 125 °C 2400 2400 2100 2100 1800 1800 1500 1500 1200 1200 900 900 600 600 300 300 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 2.0 3.0 4.0 5.0 6.0 7.0 switching losses (typical), IGBT, Inverter E = f(IC) VCE = 2800 V, RGoff = 5.1 Ω, RGon = 0.68 Ω, VGE = -15 / 15 V 2400 16000 2100 14000 1800 12000 1500 10000 1200 8000 900 6000 600 4000 300 2000 0 0 5 Datasheet 1.0 6 7 8 9 10 11 12 0 7 400 800 1200 1600 2000 2400 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 4 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 1200 A, VCE = 2800 V, VGE = -15 / 15 V transient thermal impedance , IGBT, Inverter Zth = f(t) 100 24000 21000 18000 10 15000 12000 9000 1 6000 3000 0 0.1 0.001 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 5.1 Ω, VGE = ±15 V, Tvj = 125 °C 0.01 0.1 1 10 capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 1000 kHz, VGE = 0 V, Tvj = 25 °C 1000 2500 2000 100 1500 1000 10 500 0 1 0 Datasheet 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 0 8 10 20 30 40 50 60 70 80 90 100 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 4 Characteristics diagrams gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 1200 A, Tvj = 25 °C forward characteristic (typical), Diode, Inverter IF = f(VF) 15 2400 12 2000 9 6 1600 3 0 1200 -3 800 -6 -9 400 -12 -15 0 0 5 10 15 20 25 30 35 40 0.0 switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 2800 V, IF = 1200 A 5000 4500 4500 4000 4000 3500 3500 3000 3000 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 Datasheet 400 800 1200 1600 2000 2400 0 9 1 2 3 4 5 6 7 8 9 10 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 4 Characteristics diagrams transient thermal impedance , Diode, Inverter Zth = f(t) safe operation area (SOA), Diode, Inverter IR = f(VR) Tvj = 125 °C 100 2800 2400 2000 10 1600 1200 1 800 400 0.1 0.001 Datasheet 0 0.01 0.1 1 0 10 10 1000 2000 3000 4000 5000 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 5 Circuit diagram 5 Circuit diagram Figure 1 Datasheet 11 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 6 Package outlines 6 Package outlines Figure 2 Datasheet 12 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 13 Revision 1.10 2021-10-27 FZ1200R45KL3_B5 Highly insulated module Revision history Revision history Document revision Date of release Description of changes V1.0 2011-07-15 Target datasheet V1.1 2011-10-10 Target datasheet V1.2 2011-10-21 Target datasheet V1.3 2012-05-24 Target datasheet V1.4 2012-06-14 Target datasheet V1.5 2012-09-07 Target datasheet V2.0 2013-04-02 Preliminary datasheet V3.0 2013-05-27 Final datasheet V3.1 2016-08-30 Final datasheet V3.2 2018-01-15 Final datasheet V3.3 2019-08-23 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-10-27 Final datasheet Datasheet 14 Revision 1.10 2021-10-27 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-27 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAW934-012 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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