FZ1600R12KE3

Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage Kollektor Dauergleichstrom DC collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt Verlustleistung total power dissipation Gate Emitter Spitzenspannung gate emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forward current Grenzlastintegral I²t value Isolations Prüfspannung insulation test voltage tp= 1ms VR= 0V, tp= 10ms, Tvj= 125°C Tvj= 25°C Tc= 80°C Tc= 25°C tp= 1ms, Tc= 80°C Tc= 25°C;Transistor VCES IC, nom IC ICRM Ptot VGES IF IFRM 1200 1600 2300 3200 V A A A 7,8 kW +/- 20 V 1600 A 3200 A I²t 300 k A²s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung collector emitter satration voltage Gate Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor Emitter Reststrom collector emitter cut off current Gate Emitter Reststrom gate emitter leakage current IC= 1600A, VGE= 15V, Tvj= 25°C, IC= 1600A, VGE= 15V, Tvj= 125°C, IC= 64mA, VCE= VGE, Tvj= 25°C, VGE= -15V...+15V;VCE= ...V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE=1200V, VGE= 0V, Tvj= 25°C, VCE= 0V, VGE= 20V, Tvj= 25°C VCEsat VGE(th) QG Cies Cres ICES IGES min. 5 typ. 1,7 2 5,8 max. 2,15 t.b.d. 6,5 V V V - 15,4 - µC - 115 - nF - 5,4 - nF - - 5 mA - - 400 nA prepared by: MOD-D2; Mark Münzer approved: SM TM; Christoph Lübke date of publication: 2002-07-29 revision: 2.0 1 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter IC= 1600A, VCC= 600V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE=±15V, RGon=1,6W, T vj=25°C VGE=±15V, RGon=1,6W, T vj=125°C min. td,on tr typ. 0,60 0,66 max. µs µs IC= 1600A, VCC= 600V Anstiegszeit (induktive Last) rise time (inductive load) VGE=±15V, RGon=1,6W, T vj=25°C VGE=±15V, RGon=1,6W, T vj=125°C - 0,23 0,22 - µs µs IC= 1600A, VCC= 600V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE=±15V, RGoff =0,2W, T vj=25°C VGE=±15V,RGoff =0,2W, T vj=125°C td,off - 0,82 0,96 - µs µs IC= 1600A, VCC= 600V Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse Kurzschlussverhalten SC data Modulindiktivität stray inductance module Leitungswiderstand, Anschluss-Chip lead resistance, terminal-chip Tc= 25°C VGE=±15V, RGoff =0,2W, T vj=25°C VGE=±15V, RGoff =0,2W, T vj=125°C tf - 0,15 0,18 325 - µs µs mJ IC= 1600A, VCC= 600V, Ls= 45nH VGE=±15V, RGon=1,6W, T vj=125°C Eon Eoff ISC - IC= 1600A, VCC= 600V, Ls= 45nH VGE=±15V, RGoff =0,2W, T vj=125°C - 250 - mJ tP £ 10µs, VGE £ 15V, TVj £ 125°C VCC= 900V, VCEmax= VCES - LsCE · çdi/dtç - 6400 - A LsCE RCC´/EE´ - 12 - nH - 0,19 - mW Charakteristische Werte / characteristic values Diode Wechselrichter / diode inverter Durchlassspannung forward voltage Rückstromspitze peak reverse recovery current IF= IC, nom, VGE= 0V, Tvj= 25°C IF= IC, nom, VGE= 0V, Tvj= 125°C IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Sperrverzögerungsladung recoverred charge IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Ausschaltenergie pro Puls reverse recovery energy IF=IC,nom, -diF/dt= 7200A/µs VR= 600V, VGE= -15V, Tvj= 25°C VR= 600V, VGE= -15V, Tvj= 125°C Erec 18 47 mJ mJ Qr 75 180 µC µC IRM 515 800 A A VF 2,2 2 2,8 V V 2 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Thermische Eigenschaften / thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemp. maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature pro Transistor /per transistor, DC pro Diode/per Diode, DC pro Modul / per module lPaste/lgrease =1W/m*K RthJC RthJC RthCK Tvj max Tvj op Tstg typ. 0,006 max. 0,016 0,032 K/W K/W K/W - - 150 °C -40 - 125 °C -40 - 125 °C Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment, mech. Befestigung mounting torque Anzugsdrehmoment, elektr. Anschlüsse terminal connection torque Schraube / screw M5 M 4,25 Al2O3 32 mm 20 mm >400 - 5,75 Nm Anschlüsse / terminal M4 M 1,7 - 2,3 Nm Anschlüsse / terminal M8 Gewicht weight M 8 - 10 Nm G 1500 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Ausgangskennlinie (typisch) output characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 VCE [V] 2,0 Tvj = 25°C Tvj = 125°C IC= f(VCE) VGE= 15V 2,5 3,0 3,5 Ausgangskennlinienfeld (typisch) output characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 0,0 0,5 1,0 1,5 2,0 2,5 VCE [V] 3,0 Vge=19V Vge=17V Vge=15V Vge=13V Vge=11V Vge=9V IC= f(VCE) Tvj= 125°C 3,5 4,0 4,5 5,0 4 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Übertragungscharakteristik (typisch) transfer characteristic (typical) 3200 2800 2400 2000 IC [A] 1600 1200 800 400 0 5 6 7 8 9 VGE [V] 10 Tvj=25°C Tvj=125°C IC= f(VGE) VCE= 20V 11 12 13 Durchlasskennlinie der Inversdiode (typisch) forward caracteristic of inverse diode (typical) 3200 2800 2400 2000 IF [A] 1600 1200 800 400 0 Tvj = 25°C Tvj = 125°C IF= f(VF) 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 VF [V] 5 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Schaltverluste (typisch) Switching losses (typical) 1000 900 800 700 E [mJ] 600 500 400 300 200 100 0 0 400 800 Eon Eoff Erec Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) VGE=±15V, Rgon=1,6W, Rgoff=0,2W, VCE=600V, Tvj=125°C 1200 1600 IC [A] 2000 2400 2800 3200 Schaltverluste (typisch) Switching losses (typical) 1000 900 800 700 600 E [mJ] 500 400 300 200 100 0 0 2 4 Eon Eoff Erec Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=±15V, IC=1600A, VCE=600V, Tvj=125°C 6 RG [W] 8 10 12 6 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Transienter Wärmewiderstand Transient thermal impedance 0,1 ZthJC = f (t) ZthJC [K/W] 0,01 Zth : IGBT Zth : Diode 0,001 0,001 0,01 0,1 t [s] 1 10 i ri [K/kW] : IGBT ti [s] : IGBT ri [K/kW] : Diode ti [s] : Diode 1 1,91 6,897E-01 9,18 4,452E-01 2 6,27 5,634E-02 10,08 7,451E-02 3 6,17 2,997E-02 10,58 2,647E-02 4 1,65 3,820E-03 2,16 2,850E-03 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 4000 3600 3200 2800 IC [A] 2400 2000 1600 1200 800 400 0 0 200 400 600 IC,Chip IC,Chip VGE=15V, T j=125°C 800 1000 1200 1400 VCE [V] 7 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Technische Information / technical information IGBT-Module IGBT-Modules FZ1600R12KE3 vorläufige Daten preliminary data Gehäusemaße / Schaltbild Package outline / Circuit diagram 61.5 18 ± 0.2 ± 0.3 C (K) C (K) 29.5 ± 0.5 130 114 E (A) ± 0.5 ± 0.1 E (A) DD... C C C 28.25 ± 0.5 18.25 ± 0.5 M8 G E C 14.75 M ± 0.5 C E FD... E 14 ± 0.5 E ± 0.3 8 C C E C C 2 + 0.2 28 ± 0.5 4.0 tief 10.65 2.5 tief 48.8 G E ± 0.2 ± 0.2 G 10.35 ± 0.2 E E E ø7 +0.1 (für M6-Schraube) external connection (to be done) FZ... IH4 8 (8) DB_FZ1600R12KE3_2.0.xls 2002-07-29 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. 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