FZ1600R33HE4BPSA1

FZ1600R33HE4 IHM-B module IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode Features • Electrical features - VCES = 3300 V - IC nom = 1600 A / ICRM = 3200 A - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Trench IGBT 4 - Unbeatable robustness - VCE,sat with positive temperature coefficient - High current density - Low Qg and Cres • Mechanical features - AlSiC base plate for increased thermal cycling capability - High power density - Isolated base plate - Package with CTI > 600 - RoHS compliant Potential applications • • • • • • High-power converters Medium-voltage converters Motor drives Traction drives UPS systems Active frontend (energy recovery) Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 6.0 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV 2100 V DC stability VCE(D) Tvj = 25 °C, 100 Fit Material of module baseplate AlSiC Creepage distance dCreep terminal to heatsink 32.2 mm Clearance dClear terminal to heatsink 19.1 mm Comparative tracking index Table 2 CTI > 600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module LsCE Typ. Unit Max. 9 nH Module lead resistance, terminals - chip RAA'+CC' TC = 25 °C, per switch 0.12 mΩ Module lead resistance, terminals - chip RCC'+EE' TC = 25 °C, per switch 0.14 mΩ Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G 2 Table 3 -40 150 °C - Mounting according to M6, Screw valid application note 4.25 5.75 Nm - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 800 g Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 TC = 100 °C 1600 A 3200 A IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tp limited by Tvj op (table continues...) Datasheet 3 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Gate-emitter peak voltage Table 4 VGES Values Unit ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 1600 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.40 2.65 Tvj = 125 °C 2.95 Tvj = 150 °C 3.10 3.25 5.80 6.40 IC = 62 mA, VCE = VGE, Tvj = 25 °C 5.20 VGE = ±15 V, VCC = 1800 V V V 28 µC Internal gate resistor RGint Tvj = 25 °C 0.75 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 187 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 5.33 nF Collector-emitter cut-off current ICES VCE = 3300 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 1600 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.8 Ω Tvj = 125 °C 0.600 Tvj = 150 °C 0.760 IC = 1600 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.8 Ω Tvj = 125 °C 0.220 Tvj = 150 °C 0.250 IC = 1600 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 3.9 Ω Tvj = 125 °C 3.420 Tvj = 150 °C 3.740 IC = 1600 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 3.9 Ω Tvj = 125 °C 0.690 Tvj = 150 °C 1.470 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) tr tdoff tf Turn-on time (resistive load) ton_R Turn-on energy loss per pulse Eon IC = 500 A, VCC = 2000 V, VGE = ±15 V, RGon = 0.8 Ω Tvj = 25 °C Tvj = 25 °C IC = 1600 A, VCC = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.8 Ω, di/dt = 5300 A/µs (Tvj = 150 °C) Tvj = 150 °C 5 mA 400 nA µs 0.710 µs 0.240 µs 3.670 µs 1.290 1.18 µs 1850 mJ 2850 3200 (table continues...) Datasheet 4 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse SC data Eoff ISC IC = 1600 A, VCC = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGoff = 3.9 Ω, dv/dt = 1700 V/µs (Tvj = 150 °C) Tvj = 150 °C 2280 VGE ≤ 15 V, VCC = 2400 V, VCEmax=VCES-LsCE*di/dt 6400 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT Temperature under switching conditions Tvj op 3 Typ. Unit Max. mJ 2980 3140 tP ≤ 10 µs, Tvj ≤ 150 °C A 9.30 5.60 -40 K/kW K/kW 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I 2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 1600 A 3200 A Tvj = 125 °C 630 kA²s Tvj = 150 °C 570 Tvj = 150 °C 3600 kW 10 µs Values Unit tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF IF = 1600 A, VGE = 0 V Typ. Max. Tvj = 25 °C 2.90 3.30 Tvj = 125 °C 2.60 Tvj = 150 °C 2.50 V 2.80 (table continues...) Datasheet 5 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current Recovered charge Reverse recovery energy IRM Qr Erec VCC = 1800 V, IF = 1600 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 5300 A/µs (Tvj = 150 °C) Tvj = 150 °C 1470 VCC = 1800 V, IF = 1600 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 5300 A/µs (Tvj = 150 °C) Tvj = 150 °C 685 RthJC per diode Thermal resistance, case to heat sink RthCH per diode Temperature under switching conditions Tvj op Max. A 1650 1700 µC 1360 2000 VCC = 1800 V, IF = 1600 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 5300 A/µs (Tvj = 150 °C) Tvj = 150 °C Thermal resistance, junction to case Datasheet Typ. Unit 730 mJ 1450 1750 17.5 8.50 -40 6 K/kW K/kW 150 °C Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 4 Characteristics diagrams 4 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 3200 3200 2800 2800 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.9 Ω, RGon = 0.8 Ω, VCC = 1800 V, VGE = ± 15 V 3200 10000 9000 2800 8000 2400 7000 2000 6000 1600 5000 4000 1200 3000 800 2000 400 1000 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 7 400 800 1200 1600 2000 2400 2800 3200 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 4 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 1600 A, VCC = 1800 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3.9 Ω, RGon = 0.8 Ω, VCC = 1800 V, VGE = ± 15 V, Tvj = 125 °C 10 10000 9000 8000 7000 1 6000 5000 4000 0.1 3000 2000 1000 0 0.01 0 1 2 3 4 5 6 7 8 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 1600 A, VCC = 1800 V, VGE = ± 15 V, Tvj = 125 °C 400 800 1200 1600 2000 2400 2800 3200 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 100 10 1 1 0.1 0 Datasheet 1 2 3 4 5 6 7 0.1 0.001 8 8 0.01 0.1 1 10 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 4 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.9 Ω, VGE = ±15 V, Tvj = 150 °C Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 4000 300 3600 250 3200 2800 200 2400 2000 150 1600 100 1200 800 50 400 0 0 0 500 1000 1500 2000 2500 3000 3500 0.1 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 1600 A, Tvj = 25 °C 1 10 100 Forward characteristic (typical), Diode, Inverter IF = f(VF) 15 3200 13 2800 11 9 2400 7 5 2000 3 1 1600 -1 -3 1200 -5 -7 800 -9 -11 400 -13 -15 0 0 Datasheet 4 8 12 16 20 24 28 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 9 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 4 Characteristics diagrams Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 1800 V, RGon = RGon(IGBT) Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 1800 V, IF = 1600 A 2500 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 400 800 1200 1600 2000 2400 2800 3200 0 Transient thermal impedance, Diode, Inverter Zth = f(t) 1 2 3 4 5 6 7 8 3000 3500 Safe operating area (SOA), Diode, Inverter IR = f(VR) Tvj = 150 °C 100 3600 3200 2800 2400 10 2000 1600 1200 1 800 400 0.1 0.001 Datasheet 0 0.01 0.1 1 0 10 10 500 1000 1500 2000 2500 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 5 Circuit diagram 5 Circuit diagram Figure 1 6 Package outlines Figure 2 Datasheet 11 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 12 Revision 1.30 2022-11-22 FZ1600R33HE4 IHM-B module Revision history Revision history Document revision Date of release 1.00 2021-03-02 1.10 2021-04-13 Final 1.20 2021-10-28 Final datasheet 1.30 2022-11-22 Final datasheet Datasheet Description of changes 13 Revision 1.30 2022-11-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-11-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAO543-004 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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