FZ1800R45HL4BPSA1

FZ1800R45HL4 IHM-B module Final datasheet IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode Features • Electrical features - VCES = 4500 V - IC nom = 1800 A / ICRM = 3600 A - High DC stability - High dynamic robustness - High short-circuit capability - Low VCE,sat - Trench IGBT 4 - VCE,sat with positive temperature coefficient • Mechanical features - Package with CTI > 600 - Standard housing - AlSiC base plate for increased thermal cycling capability - IHM B housing - Isolated base plate Potential applications • High-power converters • Medium-voltage converters • Power transmission and distribution Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 1 min 6.0 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 3.5 kV Tvj = 25 °C, 100 Fit 2900 V   AlSiC   DC stability VCE(D) Material of module baseplate   Creepage distance dCreep terminal to heatsink 32.2 mm Clearance dClear terminal to heatsink 19.1 mm  > 600   Values Unit Comparative tracking index Table 2 CTI   Characteristic values Parameter Symbol Note or test condition Stray inductance module LsCE Min. Typ. Max.     6   nH Module lead resistance, terminals - chip RAA'+CC' TC = 25 °C, per switch   0.08   mΩ Module lead resistance, terminals - chip RCC'+EE' TC = 25 °C, per switch   0.095   mΩ   -40   150 °C Storage temperature Tstg Mounting torque for module mounting M - Mounting according to M6, Screw valid application note 4.25   5.75 Nm Terminal connection torque M - Mounting according to M4, Screw valid application note M8, Screw 1.8   2.1 Nm 8   10 Weight G   1200   2 Table 3   g IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES   Values Unit Tvj = -40 °C 4300 V Tvj = 150 °C 4500 TC = 100 °C 1800 A Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tp limited by Tvj op 3600 A Gate-emitter peak voltage VGES   ±20 V Datasheet 3 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 2 IGBT, Inverter Table 4 Characteristic values Parameter Collector-emitter saturation voltage Gate threshold voltage Gate charge Symbol Note or test condition VCE sat VGEth QG Values Unit Min. Typ. Max. Tvj = 25 °C   2.35 2.80 Tvj = 125 °C   2.85 3.40 Tvj = 150 °C   2.95 3.50 5.5 6 6.5 V VGE = ±15 V, VCC = 2800 V   47   µC IC = 1800 A, VGE = 15 V IC = 149 mA, VCE = VGE, Tvj = 25 °C V Internal gate resistor RGint Tvj = 25 °C   0.29   Ω Input capacitance Cies f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V   297   nF Reverse transfer capacitance Cres f = 100 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V   5.4   nF Collector-emitter cut-off current ICES VCE = 4500 V, VGE = 0 V     5 mA Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C     400 nA Turn-on delay time (inductive load) tdon IC = 1800 A, VCC = 2800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.75 Ω Tvj = 125 °C   0.260   µs   0.290   Tvj = 150 °C   0.310   IC = 1800 A, VCC = 2800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.75 Ω Tvj = 125 °C   0.210     0.230   Tvj = 150 °C   0.230   IC = 1800 A, VCC = 2800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 4.7 Ω Tvj = 125 °C   6.930     7.320   Tvj = 150 °C   7.410   IC = 1800 A, VCC = 2800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 4.7 Ω Tvj = 125 °C   1.130     2.630   Tvj = 150 °C   2.850   Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) tr tdoff tf Tvj = 25 °C µs µs µs Turn-on time (resistive load) ton_R IC = 500 A, VCC = 2000 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.75 Ω 0.86     µs Turn-on energy loss per pulse Eon IC = 1800 A, VCC = 2800 V, Tvj = 25 °C Lσ = 110 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.75 Ω, di/dt = 6500 A/µs (Tvj = 150 °C) Tvj = 150 °C   5800   mJ   8100     9100   IC = 1800 A, VCC = 2800 V, Tvj = 25 °C Lσ = 110 nH, VGE = ±15 V, Tvj = 125 °C RGoff = 4.7 Ω, dv/dt = 1250 V/µs (Tvj = 150 °C) Tvj = 150 °C   7050     9000     9700   Turn-off energy loss per pulse (table continues...) Datasheet Eoff 4 mJ Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition SC data ISC VGE = 15 V, VCC = 3000 V, VCEmax=VCES-LsCE*di/dt Values tP ≤ 10 µs, Tvj = 150 °C Unit Min. Typ. Max.   8100   A Thermal resistance, junction to case RthJC per IGBT     7.20 K/kW Thermal resistance, case to heat sink RthCH per IGBT, λgrease = 1 W/(m·K)   3.60   K/kW Temperature under switching conditions Tvj op   -40   150 °C 3 Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I 2t   Tvj = -40 °C 4300 V Tvj = 150 °C 4500 1800 A tP = 1 ms 3600 A Tvj = 125 °C 930 kA²s Tvj = 150 °C 850 Tvj = 150 °C 4000 kW 10 µs Values Unit tP = 10 ms, VR = 0 V PRQM   Minimum turn-on time tonmin   Characteristic values Parameter Forward voltage Peak reverse recovery current (table continues...) Datasheet Unit   Maximum power dissipation Table 6 Values Symbol Note or test condition VF IRM Min. Typ. Max. Tvj = 25 °C   2.60 3.05 Tvj = 125 °C   2.50 2.95 Tvj = 150 °C   2.45 2.90 VCC = 2800 V, IF = 1800 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 6500 A/µs (Tvj = 150 °C) Tvj = 150 °C   2360     2600     2630   IF = 1800 A, VGE = 0 V 5 V A Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Recovered charge Reverse recovery energy Symbol Note or test condition Qr Erec Values Unit Min. Typ. Max. VCC = 2800 V, IF = 1800 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 6500 A/µs (Tvj = 150 °C) Tvj = 150 °C   1560     3060     3560   VCC = 2800 V, IF = 1800 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 6500 A/µs (Tvj = 150 °C) Tvj = 150 °C   2340     5200     6100   µC mJ Thermal resistance, junction to case RthJC per diode     12.7 K/kW Thermal resistance, case to heat sink RthCH per diode, λgrease = 1 W/(m·K)   5.30   K/kW Temperature under switching conditions Tvj op   -40   150 °C Datasheet 6 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 4 Characteristics diagrams 4 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 3600 3600 3000 3000 2400 2400 1800 1800 1200 1200 600 600 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 1800 A, Tvj = 25 °C 3600 15 12 3000 10 8 2400 5 2 1800 0 -2 1200 -5 -8 600 -10 -12 0 -15 5 Datasheet 6 7 8 9 10 11 12 13 0 7 5 9 14 19 24 28 33 38 42 47 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 4 Characteristics diagrams Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C Switching times (typical), IGBT, Inverter t = f(IC) VCC = 2800 V, Tvj = 150 °C, RGoff = 4.7 Ω, RGon = 0.75 Ω, VGE = ±15 V 100 500 450 400 10 350 300 250 1 200 150 0.1 100 50 0 0.01 0.1 1 10 100 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 1800 A, VCC = 2800 V, Tvj = 150 °C, VGE = ±15 V 600 1200 1800 2400 3000 3600 Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 4.7 Ω, RGon = 0.75 Ω, VGE = ±15 V, VCC = 2800 V 100 26000 24000 22000 20000 18000 10 16000 14000 12000 10000 1 8000 6000 4000 2000 0 0.1 0 Datasheet 1 2 3 4 5 6 7 8 9 10 0 8 600 1200 1800 2400 3000 3600 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 4 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) VGE = ±15 V, IC = 1800 A, VCC = 2800 V Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 4.7 Ω, VGE = ±15 V, VCC ≤ 3000 V, Tvj = 150 °C 20000 4400 18000 4000 16000 3600 3200 14000 2800 12000 2400 10000 2000 8000 1600 6000 1200 4000 800 2000 400 0 0 0 1 2 3 4 5 6 7 8 9 10 0 Transient thermal impedance, IGBT, Inverter Zth = f(t) 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 Forward characteristic (typical), Diode, Inverter IF = f(VF) 100 3600 3000 2400 10 1800 1200 1 600 0.1 0.001 Datasheet 0 0.01 0.1 1 0.0 10 9 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 4 Characteristics diagrams Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 2800 V, RGon = RGon(IGBT) Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 2800 V, IF = 1800 A 8000 8000 7000 7000 6000 6000 5000 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 0 600 1200 1800 2400 3000 3600 0 Safe operating area (SOA), Diode, Inverter IR = f(VR) Tvj = 150 °C 1 2 3 4 5 6 7 8 9 10 Transient thermal impedance, Diode, Inverter Zth = f(t) 100 4000 3600 3200 2800 10 2400 2000 1600 1 1200 800 400 0 0 Datasheet 0.1 0.001 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 10 0.01 0.1 1 10 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 5 Circuit diagram 5 Circuit diagram Figure 1 Package outlines 74 85,5 2 28,5 0 48,5 85,5 2 12,8 2 2 28,5 6 ( 7) 2 E 38,5 1 62 76 35,94 screw in depth max. 16 140 0,5 20 Y X 0 ( 7) 62 20 2 62 3x (M4) D 85,5 6x (M8) 5 6x 1,6 A D E 28 screw in depth max. 8 A M 190 0,5 3x PCB hole pattern 3x 0,4 CZ 5 0,1 3 3x Y K X 0 H K 0,2 M-M H 0 20,3 41,3 79,4 35,5 40 45,2 97,6 Recommended design height for lower side busbar to baseplate 38,2 0,2 mm. 1 Recommended tolerance of threaded holes in heatsink 0,1 mm. 2 Recommended hole diameter for PCB 3 Dimensions according to ISO 14405 GG (Method of least squares (LSQ)). Reference D and E defined with GG ISO 8015 - Independency principle Figure 2 Datasheet 11 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 12 Revision 1.30 2023-09-29 FZ1800R45HL4 IHM-B module Revision history Revision history Document revision Date of release Description of changes 0.10 2020-09-18   0.10 2020-10-05   0.20 2021-03-25   1.00 2021-04-16 Final 1.10 2021-10-20 Final datasheet 1.20 2021-10-26 Final datasheet 1.30 2023-09-29 Final datasheet Datasheet 13 Revision 1.30 2023-09-29 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2023-09-29 Published by Infineon Technologies AG 81726 Munich, Germany   © 2023 Infineon Technologies AG All Rights Reserved.   Do you have a question about any aspect of this document? Email: erratum@infineon.com   Document reference IFX-AAK623-007 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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