FZ2400R33HE4BPSA1

FZ2400R33HE4 IHM-B module IHM-B module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode Features • Electrical features - VCES = 3300 V - IC nom = 2400 A / ICRM = 4800 A - High current density - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Trench IGBT 4 - Unbeatable robustness - VCE,sat with positive temperature coefficient - Low Qg and Cres • Mechanical features - AlSiC base plate for increased thermal cycling capability - High power density - Isolated base plate - Package with CTI > 600 - RoHS compliant Potential applications • • • • • • High-power converters Medium-voltage converters Motor drives Traction drives UPS systems Active frontend (energy recovery) Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz 6.0 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD ≤ 10 pC 2.6 kV 2100 V DC stability VCE(D) Tvj = 25 °C, 100 Fit Material of module baseplate AlSiC Creepage distance dCreep terminal to heatsink 32.2 mm Clearance dClear terminal to heatsink 19.1 mm Comparative tracking index Table 2 CTI > 600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module LsCE Typ. Unit Max. 6 nH Module lead resistance, terminals - chip RAA'+CC' TC = 25 °C, per switch 0.08 mΩ Module lead resistance, terminals - chip RCC'+EE' TC = 25 °C, per switch 0.095 mΩ Storage temperature Tstg Mounting torque for module mounting M Terminal connection torque M Weight G 2 Table 3 -40 150 °C - Mounting according to M6, Screw valid application note 4.25 5.75 Nm - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 1200 g Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 TC = 105 °C 2400 A 4800 A IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tp limited by Tvj op (table continues...) Datasheet 3 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Gate-emitter peak voltage Table 4 VGES Values Unit ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage Gate threshold voltage Gate charge VCE sat VGEth QG IC = 2400 A, VGE = 15 V Typ. Max. Tvj = 25 °C 2.40 2.65 Tvj = 125 °C 2.95 Tvj = 150 °C 3.10 3.25 5.80 6.40 IC = 94 mA, VCE = VGE, Tvj = 25 °C 5.20 V V VGE = ±15 V, VCC = 1800 V 40 µC Internal gate resistor RGint Tvj = 25 °C 0.5 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 280 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 8 nF Collector-emitter cut-off current ICES VCE = 3300 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 2400 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.5 Ω Tvj = 125 °C 0.560 Tvj = 150 °C 0.670 IC = 2400 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGon = 0.5 Ω Tvj = 125 °C 0.250 Tvj = 150 °C 0.290 IC = 2400 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 3.3 Ω Tvj = 125 °C 4.000 Tvj = 150 °C 4.300 IC = 2400 A, VCC = 1800 V, Tvj = 25 °C VGE = ±15 V, RGoff = 3.3 Ω Tvj = 125 °C 0.540 Tvj = 150 °C 1.400 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) tr tdoff tf Turn-on time (resistive load) ton_R Turn-on energy loss per pulse Eon IC = 500 A, VCC = 2000 V, VGE = ±15 V, RGon = 0.5 Ω Tvj = 25 °C Tvj = 25 °C IC = 2400 A, VCC = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGon = 0.5 Ω, di/dt = 7600 A/µs (Tvj = 150 °C) Tvj = 150 °C 5 mA 400 nA µs 0.660 µs 0.270 µs 4.300 µs 1.180 1.19 µs 2000 mJ 3400 3900 (table continues...) Datasheet 4 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Turn-off energy loss per pulse SC data Eoff ISC IC = 2400 A, VCC = 1800 V, Tvj = 25 °C Lσ = 85 nH, VGE = ±15 V, Tvj = 125 °C RGoff = 3.3 Ω, dv/dt = 1500 V/µs (Tvj = 150 °C) Tvj = 150 °C 3500 VGE ≤ 15 V, VCC = 2400 V, VCEmax=VCES-LsCE*di/dt 9600 Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT Temperature under switching conditions Tvj op 3 Typ. Unit Max. mJ 4600 4950 tP ≤ 10 µs, Tvj ≤ 150 °C A 5.50 4.30 -40 K/kW K/kW 150 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I 2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -40 °C 3300 V Tvj = 150 °C 3300 2400 A 4800 A Tvj = 125 °C 1230 kA²s Tvj = 150 °C 1110 Tvj = 150 °C 5400 kW 10 µs Values Unit tP = 1 ms tP = 10 ms, VR = 0 V Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF IF = 2400 A, VGE = 0 V Typ. Max. Tvj = 25 °C 2.90 3.30 Tvj = 125 °C 2.60 Tvj = 150 °C 2.50 V 2.80 (table continues...) Datasheet 5 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Peak reverse recovery current Recovered charge Reverse recovery energy IRM Qr Erec VCC = 1800 V, IF = 2400 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 7600 A/µs (Tvj = 150 °C) Tvj = 150 °C 2440 VCC = 1800 V, IF = 2400 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 7600 A/µs (Tvj = 150 °C) Tvj = 150 °C 1100 VCC = 1800 V, IF = 2400 A, Tvj = 25 °C VGE = -15 V, -diF/dt = Tvj = 125 °C 7600 A/µs (Tvj = 150 °C) Tvj = 150 °C 1480 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode Temperature under switching conditions Tvj op Datasheet Typ. Unit Max. A 2820 2880 µC 2100 2500 mJ 2750 3200 10.6 5.10 -40 6 K/kW K/kW 150 °C Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 4 Characteristics diagrams 4 Characteristics diagrams Output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V Output characteristic field (typical), IGBT, Inverter IC = f(VCE) Tvj = 150 °C 4800 4800 4400 4400 4000 4000 3600 3600 3200 3200 2800 2800 2400 2400 2000 2000 1600 1600 1200 1200 800 800 400 400 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V Switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 3.3 Ω, RGon = 0.5 Ω, VCC = 1800 V, VGE = ± 15 V 4800 12000 4400 11000 4000 10000 3600 9000 3200 8000 2800 7000 2400 6000 2000 5000 1600 4000 1200 3000 800 2000 400 1000 0 0 5 Datasheet 6 7 8 9 10 11 12 13 0 7 600 1200 1800 2400 3000 3600 4200 4800 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 4 Characteristics diagrams Switching losses (typical), IGBT, Inverter E = f(RG) IC = 2400 A, VCC = 1800 V, VGE = ± 15 V Switching times (typical), IGBT, Inverter t = f(IC) RGoff = 3.3 Ω, RGon = 0.5 Ω, VCC = 1800 V, VGE = ± 15 V, Tvj = 125 °C 10 18000 16000 14000 1 12000 10000 8000 6000 0.1 4000 2000 0 0.01 0 1 2 3 4 5 6 0 Switching times (typical), IGBT, Inverter t = f(RG) IC = 2400 A, VCC = 1800 V, VGE = ± 15 V, Tvj = 125 °C 600 1200 1800 2400 3000 3600 4200 4800 Transient thermal impedance , IGBT, Inverter Zth = f(t) 10 10 1 1 0.1 0.1 0 Datasheet 1 2 3 4 5 0.01 0.001 6 8 0.01 0.1 1 10 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 4 Characteristics diagrams Reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 3.3 Ω, VGE = 15 V, Tvj = 150 °C Capacity characteristic (typical), IGBT, Inverter C = f(VCE) f = 100 kHz, VGE = 0 V, Tvj = 25 °C 6000 500 5400 4800 400 4200 3600 300 3000 2400 200 1800 1200 100 600 0 0 0 500 1000 1500 2000 2500 3000 3500 0.1 Gate charge characteristic (typical), IGBT, Inverter VGE = f(QG) IC = 2400 A, Tvj = 25 °C 10 100 Forward characteristic (typical), Diode, Inverter IF = f(VF) 15 4800 13 4400 11 4000 9 7 3600 5 3200 3 2800 1 2400 -1 -3 2000 -5 1600 -7 1200 -9 800 -11 400 -13 -15 0 0 Datasheet 1 4 8 12 16 20 24 28 32 36 40 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 9 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 4 Characteristics diagrams Switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 1800 V, RGon = RGon(IGBT) Switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 1800 V, IF = 2400 A 5000 4000 4500 3500 4000 3000 3500 2500 3000 2500 2000 2000 1500 1500 1000 1000 500 500 0 0 0 600 1200 1800 2400 3000 3600 4200 4800 0 Transient thermal impedance, Diode, Inverter Zth = f(t) 1 2 3 4 5 6 Safe operating area (SOA), Diode, Inverter IR = f(VR) Tvj = 150 °C 100 5400 4800 4200 3600 10 3000 2400 1800 1 1200 600 0.1 0.001 Datasheet 0 0.01 0.1 1 0 10 10 500 1000 1500 2000 2500 3000 3500 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 5 Circuit diagram 5 Circuit diagram Figure 1 6 Package outlines Figure 2 Datasheet 11 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 12 Revision 1.30 2022-11-22 FZ2400R33HE4 IHM-B module Revision history Revision history Document revision Date of release 1.00 2021-03-25 1.10 2021-10-15 Final datasheet 1.20 2022-04-27 Final datasheet 1.30 2022-11-22 Final datasheet Datasheet Description of changes 13 Revision 1.30 2022-11-22 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-11-22 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-ABA409-004 Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. Warnings Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.