FZ250R65KE3
Highly insulated module
Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode
Features
• Electrical features
- VCES = 6500 V
- IC nom = 250 A / ICRM = 500 A
- Low VCE,sat
• Mechanical features
- Extended storage temperature down to Tstg = -55 °C
- High creepage and clearance distances
- Package with CTI > 600
- Package with enhanced insulation of 10.4 kV AC 60 s
- AlSiC base plate for increased thermal cycling capability
Potential applications
• Medium-voltage converters
• Traction drives
Product validation
• Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068
Description
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
6
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
7
Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Datasheet
2
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
1 Package
1
Package
Table 1
Insulation coordination
Parameter
Symbol Note or test condition
Values
Unit
Isolation test voltage
VISOL
RMS, f = 50 Hz, t = 60 s
10.4
kV
Partial discharge extinction
voltage
Visol
RMS, f = 50 Hz, QPD typ. 10 pC
5.1
kV
3800
V
DC stability
VCE(D)
Tvj=25°C, 100 Fit
Material of module
baseplate
AlSiC
Internal isolation
basic insulation (class 1, IEC 61140)
AlN
Creepage distance
dCreep
terminal to heatsink
64.0
mm
Creepage distance
dCreep
terminal to terminal
56.0
mm
Clearance
dClear
terminal to heatsink
40.0
mm
Clearance
dClear
terminal to terminal
26.0
mm
Comparative tracking index
Table 2
CTI
>600
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Stray inductance module
LsCE
Typ.
Unit
Max.
25
nH
Module lead resistance,
terminals - chip
RAA'+CC'
TC=25°C, per switch
0.36
mΩ
Module lead resistance,
terminals - chip
RCC'+EE'
TC=25°C, per switch
0.36
mΩ
Storage temperature
Tstg
-55
125
°C
Mounting torque for module
mounting
M
- Mounting according to M6, Screw
valid application note
4.25
5.75
Nm
Terminal connection torque
M
- Mounting according to M8, Screw
valid application note
8
10
Nm
Weight
G
2
Table 3
500
g
Values
Unit
Tvj = -50 °C
5900
V
Tvj = 25 °C
6500
Tvj = 125 °C
6500
IGBT, Inverter
Maximum rated values
Parameter
Collector-emitter voltage
Symbol Note or test condition
VCES
(table continues...)
Datasheet
3
Revision 1.10
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FZ250R65KE3
Highly insulated module
2 IGBT, Inverter
Table 3
(continued) Maximum rated values
Parameter
Symbol Note or test condition
Continuous DC collector
current
ICDC
Tvj max = 150 °C
Repetitive peak collector
current
ICRM
tP = 1 ms
Gate-emitter peak voltage
VGES
Table 4
TC = 80 °C
Values
Unit
250
A
500
A
±20
V
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Collector-emitter saturation
voltage
VCE sat
Gate threshold voltage
VGEth
Gate charge
QG
IC = 250 A, VGE = 15 V
Typ.
Max.
Tvj = 25 °C
3.00
3.40
Tvj = 125 °C
3.70
4.20
6
6.60
IC = 35 mA, VCE = VGE, Tvj = 25 °C
5.40
V
V
VGE = ±15 V, VCE = 3600 V
10
µC
Internal gate resistor
RGint
Tvj = 25 °C
2.3
Ω
Input capacitance
Cies
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
69
nF
Reverse transfer capacitance
Cres
f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V
1.05
nF
Collector-emitter cut-off
current
ICES
VCE = 6500 V, VGE = 0 V
Gate-emitter leakage current
IGES
VCE = 0 V, VGE = 20 V, Tvj = 25 °C
Turn-on delay time
(inductive load)
tdon
IC = 250 A, VCE = 3600 V,
VGE = ±15 V, RGon = 3 Ω
Tvj = 25 °C
0.640
Tvj = 125 °C
0.650
IC = 250 A, VCE = 3600 V,
VGE = ±15 V, RGon = 3 Ω
Tvj = 25 °C
0.180
Tvj = 125 °C
0.200
IC = 250 A, VCE = 3600 V,
VGE = ±15 V, RGoff = 20 Ω
Tvj = 25 °C
7.300
Tvj = 125 °C
7.600
IC = 250 A, VCE = 3600 V,
VGE = ±15 V, RGoff = 20 Ω
Tvj = 25 °C
0.400
Tvj = 125 °C
0.500
ton_R
IC = 500 A, VCE = 2000 V,
VGE = ±15 V, RGon = 3 Ω
Tvj = 25 °C
Turn-on energy loss per
pulse
Eon
IC = 250 A, VCE = 3600 V,
Lσ = 280 nH, VGE = ±15 V,
RGon = 3 Ω
Tvj = 25 °C
1400
Tvj = 125 °C
2200
Turn-off energy loss per
pulse
Eoff
IC = 250 A, VCE = 3600 V,
Lσ = 280 nH, VGE = ±15 V,
RGoff = 20 Ω
Tvj = 25 °C
1200
Tvj = 125 °C
1400
SC data
ISC
VGE ≤ 15 V, VCC = 4500 V,
VCEmax=VCES-LsCE*di/dt
tP ≤ 10 µs, Tvj ≤
125 °C
1500
Rise time (inductive load)
Turn-off delay time
(inductive load)
Fall time (inductive load)
Turn-on time (resistive load)
tr
tdoff
tf
Tvj = 25 °C
1.91
5
mA
400
nA
µs
µs
µs
µs
µs
mJ
mJ
A
(table continues...)
Datasheet
4
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
3 Diode, Inverter
Table 4
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to case
RthJC
per IGBT
Thermal resistance, case to
heat sink
RthCH
per IGBT, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
3
Typ.
Unit
Max.
26.1
26.5
-50
K/kW
K/kW
125
°C
Diode, Inverter
Table 5
Maximum rated values
Parameter
Symbol Note or test condition
Repetitive peak reverse
voltage
VRRM
Continuous DC forward
current
IF
Repetitive peak forward
current
IFRM
I2t - value
I2t
Maximum power dissipation
PRQM
Minimum turn-on time
tonmin
Table 6
Values
Unit
Tvj = -50 °C
5900
V
Tvj = 25 °C
6500
Tvj = 125 °C
6500
tP = 1 ms
tP = 10 ms, VR = 0 V
Tvj = 125 °C
Tvj = 125 °C
250
A
500
A
52
kA²s
1000
kW
10
µs
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Forward voltage
VF
Peak reverse recovery
current
IRM
Recovered charge
Qr
Reverse recovery energy
Erec
Typ.
Max.
Tvj = 25 °C
3.00
3.50
Tvj = 125 °C
2.95
3.50
Tvj = 25 °C
370
Tvj = 125 °C
400
VR = 3600 V, IF = 250 A,
VGE = -15 V, -diF/dt =
1000 A/µs (Tvj = 125 °C)
Tvj = 25 °C
290
Tvj = 125 °C
540
VR = 3600 V, IF = 250 A,
VGE = -15 V, -diF/dt =
1000 A/µs (Tvj = 125 °C)
Tvj = 25 °C
470
Tvj = 125 °C
1000
IF = 250 A, VGE = 0 V
VR = 3600 V, IF = 250 A,
VGE = -15 V, -diF/dt =
1000 A/µs (Tvj = 125 °C)
V
A
µC
mJ
(table continues...)
Datasheet
5
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
3 Diode, Inverter
Table 6
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Thermal resistance, junction
to case
RthJC
per diode
Thermal resistance, case to
heat sink
RthCH
per diode, λgrease= 1 W/(m*K)
Temperature under
switching conditions
Tvj op
Datasheet
Typ.
Unit
Max.
56.0
42.0
-50
6
K/kW
K/kW
125
°C
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
4 Characteristics diagrams
4
Characteristics diagrams
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
VGE = 15 V
output characteristic (typical), IGBT, Inverter
IC = f(VCE)
Tvj = 125 °C
500
500
450
450
400
400
350
350
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
transfer characteristic (typical), IGBT, Inverter
IC = f(VGE)
VCE = 20 V
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
switching losses (typical), IGBT, Inverter
E = f(IC)
RGoff = 20 Ω, RGon = 3 Ω, VCE = 3600 V, VGE = ± 15 V
500
6000
450
5000
400
350
4000
300
250
3000
200
2000
150
100
1000
50
0
0
6
Datasheet
7
8
9
10
11
12
13
0
7
50
100 150 200 250 300 350 400 450 500
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
4 Characteristics diagrams
switching losses (typical), IGBT, Inverter
E = f(RG)
IC = 250 A, VCE = 3600 V, VGE = ± 15 V
transient thermal impedance , IGBT, Inverter
Zth = f(t)
5000
100
4000
10
3000
2000
1
1000
0
0
3
6
9
0.1
0.001
12 15 18 21 24 27 30 33 36
reverse bias safe operating area (RBSOA), IGBT,
Inverter
IC = f(VCE)
RGoff = 20 Ω, VGE = ±15 V, Tvj = 125 °C
0.01
0.1
1
10
100
forward characteristic of (typical), Diode, Inverter
IF = f(VF)
500
700
450
600
400
500
350
300
400
250
300
200
150
200
100
100
50
0
0
0
Datasheet
1000
2000
3000
4000
5000
6000
7000
0.0
8
1.0
2.0
3.0
4.0
5.0
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
4 Characteristics diagrams
switching losses (typical), Diode, Inverter
Erec = f(IF)
VCE = 3600 V, RGon = RGon(IGBT)
switching losses (typical), Diode, Inverter
Erec = f(RG)
VCE = 3600 V, IF = 250 A
1500
1200
1250
1000
1000
800
750
600
500
400
250
200
0
0
0
50
100 150 200 250 300 350 400 450 500
0.0
transient thermal impedance , Diode, Inverter
Zth = f(t)
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
safe operation area (SOA), Diode, Inverter
IR = f(VR)
Tvj = 125 °C
100
600
500
400
300
10
200
100
1
0.001
Datasheet
0
0.01
0.1
1
10
0
100
9
1000
2000
3000
4000
5000
6000
7000
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
5 Circuit diagram
5
Circuit diagram
Figure 1
Datasheet
10
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
6 Package outlines
6
Package outlines
Figure 2
Datasheet
11
Revision 1.10
2021-10-27
FZ250R65KE3
Highly insulated module
7 Module label code
7
Module label code
Module label code
Code format
Data Matrix
Barcode Code128
Encoding
ASCII text
Code Set A
Symbol size
16x16
23 digits
Standard
IEC24720 and IEC16022
IEC8859-1
Code content
Content
Module serial number
Module material number
Production order number
Date code (production year)
Date code (production week)
Digit
1–5
6 - 11
12 - 19
20 – 21
22 – 23
Example
71549
142846
55054991
15
30
Example
71549142846550549911530
71549142846550549911530
Figure 3
2
Datasheet
12
Revision 1.10
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FZ250R65KE3
Highly insulated module
Revision history
Revision history
Document revision
Date of release
Description of changes
V1.0
2012-01-17
Target datasheet
V1.1
2012-03-06
Target datasheet
V2.0
2012-07-16
Preliminary datasheet
V3.0
2014-06-16
Final datasheet
V3.1
2019-09-06
Final datasheet
V3.2
2020-05-06
Final datasheet
n/a
2020-09-01
Datasheet migrated to a new system with a new layout and new revision
number schema: target or preliminary datasheet = 0.xy; final datasheet =
1.xy
1.10
2021-10-27
Final datasheet
Datasheet
13
Revision 1.10
2021-10-27
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-10-27
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
Do you have a question about any
aspect of this document?
Email: erratum@infineon.com
Document reference
IFX-AAX093-007
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer’s compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to such
application.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized representatives of Infineon Technologies,
Infineon Technologies’ products may not be used in
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