FZ400R65KF1

Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage Teilentladungs Aussetzspannung partial discharge extinction voltage tP = 1 ms Tvj=125°C Tvj=25°C Tvj=-40°C TC = 80 °C TC = 25 °C tP = 1 ms, T C = 80°C VCES IC,nom. IC ICRM 6500 6300 5800 400 800 800 V A A A TC=25°C, Transistor Ptot 7,4 kW VGES +/- 20V V IF 400 A IFRM 800 A VR = 0V, tp = 10ms, T vj = 125°C I2t 87 k A2s RMS, f = 50 Hz, t = 1 min. VISOL 10,2 kV RMS, f = 50 Hz, QPD typ. 10pC (acc. To IEC 1287) VISOL 5,1 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Gateladung gate charge Eingangskapazität input capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC = 400A, VGE = 15V, Tvj = 25°C IC = 400A, VGE = 15V, Tvj = 125°C IC = 70mA, VCE = VGE, Tvj = 25°C VGE(th) VCE sat min. 6,4 typ. 4,3 5,3 7,0 max. 4,9 5,9 8,1 V V V VGE = -15V ... +15V QG - 5,6 - µC f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V VCE = 6300V, VGE = 0V, Tvj = 25°C VCE = 6500V, VGE = 0V, Tvj = 125°C VCE = 0V, VGE = 20V, Tvj = 25°C Cies - 56 0,4 40 - - nF mA mA nA ICES - - IGES - 400 prepared by: Dr. Oliver Schilling approved by: Dr. Schütze 2002-07-05 date of publication: 2002-07-05 revision/Status: Series 1 1 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Charakteristische Werte / Characteristic values Transistor / Transistor Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Anstiegszeit (induktive Last) rise time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGon = 6,2Ω, CGE=44nF, Tvj = 125°C, Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Fallzeit (induktive Last) fall time (inductive load) IC = 400A, VCE = 3600V VGE = ±15V, RGoff = 36Ω, CGE=44nF, Tvj = 25°C, VGE = ±15V, RGoff = 36Ω, CGE=44F, Tvj = 125°C, Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modulleitungswiderstand, Anschlüsse - Chip module lead resistance, terminals - chip IC = 400A, VCE = 3600V, VGE = ±15V RGon = 6,2Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH IC = 400A, VCE = 3600V, VGE = ±15V RGoff = 36Ω, CGE=44nF, Tvj = 125°C , Lσ = 280nH tP ≤ 10µsec, VGE ≤ 15V, acc to appl.note 2002/05 TVj≤125°C, VCC=4400V, VCEmax=VCES -LσCE ·di/dt ISC LsCE 2000 20 A nH Eoff 2300 mJ Eon 4000 mJ tf 0,40 0,50 µs µs td,off 5,50 6,00 µs µs tr 0,37 0,40 µs µs td,on 0,75 0,72 µs µs min. typ. max. RCC´+EE´ - 0,18 - mΩ Diode / Diode Durchlaßspannung forward voltage Rückstromspitze peak reverse recovery current IF = 400A, VGE = 0V, Tvj = 25°C IF = 400A, VGE = 0V, Tvj = 125°C IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Sperrverzögerungsladung recovered charge IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Abschaltenergie pro Puls reverse recovery energy IF = 400A, - diF/dt = 1400A/µs VR = 3600V, VGE = -10V, Tvj = 25°C VR = 3600V, VGE = -10V, Tvj = 125°C Erec Qr IRM VF min. 3,0 typ. 3,8 3,9 max. 4,6 4,7 V V - 540 660 - A A - 360 700 - µC µC - 440 1050 - mJ mJ 2 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur Sperrschicht junction operation temperature Lagertemperatur storage temperature Schaltvorgänge IGBT(RBSOA);Diode(SOA) switching operation IGBT(RBSOA);Diode(SOA) Transistor / transistor, DC Diode/Diode, DC pro Modul / per Module λPaste ≤ 1 W/m*K / λgrease ≤ 1 W/m*K RthCK RthJC - typ. 0,008 max. 0,017 0,032 K/W K/W K/W Tvj, max - - 150 °C Tvj,op -40 - 125 °C Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage distance Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment f. mech. Befestigung mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque Gewicht weight Schraube /screw M6 M AlN 56 mm 26 mm >600 5 Nm Anschlüsse / terminals M4 Anschlüsse / terminals M8 M 2 8 - 10 1000 Nm Nm g G Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 800 700 600 25°C 125°C IC [A] 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE), VGE= < see inset > Tvj = 125°C 800 700 600 20V 15V 12V 10V IC [A] 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 8,0 9,0 10,0 VCE [V] 4 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Übertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 10V 800 700 600 25°C 125°C IC [A] 500 400 300 200 100 0 5 6 7 8 9 10 11 12 13 14 15 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 800 700 600 25°C 125°C IF = f (VF) IF [A] 500 400 300 200 100 0 0,0 1,0 2,0 3,0 4,0 5,0 6,0 7,0 VF [V] 5 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) RGon=6,2Ω , RGoff=36Ω , CGE = 44nF, VGE=±15V, VCE = 3600V, Tvj = 125°C, Switching losses (typical) 11000 10000 9000 8000 E [mJ] 7000 6000 5000 4000 3000 2000 1000 0 0 100 200 300 400 500 600 700 800 Eon Eoff Erec IC [A] Schaltverluste (typisch) Switching losses (typical) 8000 7200 6400 5600 E [mJ] 4800 4000 3200 2400 1600 800 0 5 10 15 20 Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) IC = 400A , VCE = 3600V , VGE=±15V, CGE=44nF , Tvj = 125°C Eon Eoff Erec 25 30 35 40 45 50 55 60 RG [Ω ] 6 FZ 400 R65 KF1 (final 1).xls Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 400 R 65 KF1 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) RG,off = 36Ω , CGE=44nF, VGE=±15V, Tvj= , VCC