FZ500R65KE3NOSA1

FZ500R65KE3 Highly insulated module Highly insulated module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode Features • Electrical features - VCES = 6500 V - IC nom = 500 A / ICRM = 1000 A - Low VCE,sat • Mechanical features - AlSiC base plate for increased thermal cycling capability - Extended storage temperature down to Tstg = -55 °C - High creepage and clearance distances - Package with enhanced insulation of 10.4 kV AC 60 s - Package with CTI > 600 Potential applications • Traction drives • Medium-voltage converters Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 IGBT, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Diode, Inverter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 6 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 7 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Datasheet 2 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Values Unit Isolation test voltage VISOL RMS, f = 50 Hz, t = 60 s 10.4 kV Partial discharge extinction voltage Visol RMS, f = 50 Hz, QPD typ. 10 pC 5.1 kV 3800 V DC stability VCE(D) Tvj=25°C, 100 Fit Material of module baseplate AlSiC Internal isolation basic insulation (class 1, IEC 61140) AlN Creepage distance dCreep terminal to heatsink 64.0 mm Creepage distance dCreep terminal to terminal 56.0 mm Clearance dClear terminal to heatsink 40.0 mm Clearance dClear terminal to terminal 26.0 mm Comparative tracking index Table 2 CTI >600 Characteristic values Parameter Symbol Note or test condition Values Min. Stray inductance module LsCE Typ. Unit Max. 20 nH Module lead resistance, terminals - chip RAA'+CC' TC=25°C, per switch 0.18 mΩ Module lead resistance, terminals - chip RCC'+EE' TC=25°C, per switch 0.18 mΩ Storage temperature Tstg -55 125 °C Mounting torque for module mounting M - Mounting according to M6, Screw valid application note 4.25 5.75 Nm Terminal connection torque M - Mounting according to M4, Screw valid application note M8, Screw 1.8 2.1 Nm 8 10 Weight 2 Table 3 G 1000 g Values Unit Tvj = -50 °C 5900 V Tvj = 25 °C 6500 Tvj = 125 °C 6500 IGBT, Inverter Maximum rated values Parameter Collector-emitter voltage Symbol Note or test condition VCES (table continues...) Datasheet 3 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 2 IGBT, Inverter Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Continuous DC collector current ICDC Tvj max = 150 °C Repetitive peak collector current ICRM tP = 1 ms Gate-emitter peak voltage VGES Table 4 TC = 80 °C Values Unit 500 A 1000 A ±20 V Values Unit Characteristic values Parameter Symbol Note or test condition Min. Collector-emitter saturation voltage VCE sat Gate threshold voltage VGEth Gate charge QG IC = 500 A, VGE = 15 V Typ. Max. Tvj = 25 °C 3.00 3.40 Tvj = 125 °C 3.70 4.20 6 6.60 IC = 70 mA, VCE = VGE, Tvj = 25 °C 5.40 V V VGE = ±15 V, VCE = 3600 V 20 µC Internal gate resistor RGint Tvj = 25 °C 1.1 Ω Input capacitance Cies f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 135 nF Reverse transfer capacitance Cres f = 1000 kHz, Tvj = 25 °C, VCE = 25 V, VGE = 0 V 2.1 nF Collector-emitter cut-off current ICES VCE = 6500 V, VGE = 0 V Gate-emitter leakage current IGES VCE = 0 V, VGE = 20 V, Tvj = 25 °C Turn-on delay time (inductive load) tdon IC = 500 A, VCE = 3600 V, VGE = ±15 V, RGon = 1.5 Ω Tvj = 25 °C 0.640 Tvj = 125 °C 0.650 IC = 500 A, VCE = 3600 V, VGE = ±15 V, RGon = 1.5 Ω Tvj = 25 °C 0.180 Tvj = 125 °C 0.200 IC = 500 A, VCE = 3600 V, VGE = ±15 V, RGoff = 10 Ω Tvj = 25 °C 7.300 Tvj = 125 °C 7.600 IC = 500 A, VCE = 3600 V, VGE = ±15 V, RGoff = 10 Ω Tvj = 25 °C 0.400 Tvj = 125 °C 0.500 ton_R IC = 500 A, VCE = 2000 V, VGE = ±15 V, RGon = 1.5 Ω Tvj = 25 °C Turn-on energy loss per pulse Eon IC = 500 A, VCE = 3600 V, Lσ = 280 nH, VGE = ±15 V, RGon = 1.5 Ω, di/dt = 2000 A/µs (Tvj = 125 °C) Tvj = 25 °C 2800 Tvj = 125 °C 4300 Turn-off energy loss per pulse Eoff IC = 500 A, VCE = 3600 V, Tvj = 25 °C Lσ = 280 nH, VGE = ±15 V, T = 125 °C RGoff = 10 Ω, dv/dt = V/µs vj (Tvj = 125 °C) 2400 Rise time (inductive load) Turn-off delay time (inductive load) Fall time (inductive load) Turn-on time (resistive load) tr tdoff tf Tvj = 25 °C 1.62 5 mA 400 nA µs µs µs µs µs mJ mJ 2800 (table continues...) Datasheet 4 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 3 Diode, Inverter Table 4 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. SC data ISC VGE ≤ 15 V, VCC = 4500 V, VCEmax=VCES-LsCE*di/dt tP ≤ 10 µs, Tvj ≤ 125 °C Thermal resistance, junction to case RthJC per IGBT Thermal resistance, case to heat sink RthCH per IGBT, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op 3 Typ. Unit Max. 3000 A 13.1 13.2 -50 K/kW K/kW 125 °C Diode, Inverter Table 5 Maximum rated values Parameter Symbol Note or test condition Repetitive peak reverse voltage VRRM Continuous DC forward current IF Repetitive peak forward current IFRM I2t - value I2t Maximum power dissipation PRQM Minimum turn-on time tonmin Table 6 Values Unit Tvj = -50 °C 5900 V Tvj = 25 °C 6500 Tvj = 125 °C 6500 tP = 1 ms tP = 10 ms, VR = 0 V Tvj = 125 °C Tvj = 125 °C 500 A 1000 A 210 kA²s 2000 kW 10 µs Values Unit Characteristic values Parameter Symbol Note or test condition Min. Forward voltage VF Peak reverse recovery current IRM Recovered charge Qr IF = 500 A, VGE = 6500 V VR = 3600 V, IF = 500 A, VGE = -15 V, -diF/dt = 2000 A/µs (Tvj = 125 °C) VR = 3600 V, IF = 500 A, VGE = -15 V, -diF/dt = 2000 A/µs (Tvj = 125 °C) Typ. Max. Tvj = 25 °C 3.00 3.50 Tvj = 125 °C 2.95 3.50 Tvj = 25 °C 730 Tvj = 125 °C 800 Tvj = 25 °C 570 Tvj = 125 °C 1050 V A µC (table continues...) Datasheet 5 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 3 Diode, Inverter Table 6 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Reverse recovery energy Erec VR = 3600 V, IF = 500 A, VGE = -15 V, -diF/dt = 2000 A/µs (Tvj = 125 °C) Tvj = 25 °C 930 Tvj = 125 °C 2000 Thermal resistance, junction to case RthJC per diode Thermal resistance, case to heat sink RthCH per diode, λgrease= 1 W/(m*K) Temperature under switching conditions Tvj op Datasheet Typ. Unit Max. mJ 27.9 21.0 -50 6 K/kW K/kW 125 °C Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 4 Characteristics diagrams 4 Characteristics diagrams output characteristic (typical), IGBT, Inverter IC = f(VCE) VGE = 15 V output characteristic (typical), IGBT, Inverter IC = f(VCE) Tvj = 125 °C 1000 1000 900 900 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 0.0 transfer characteristic (typical), IGBT, Inverter IC = f(VGE) VCE = 20 V 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 switching losses (typical), IGBT, Inverter E = f(IC) RGoff = 10 Ω, RGon = 1.5 Ω, VCE = 3600 V, VGE = ± 15 V 1000 12000 900 11000 10000 800 9000 700 8000 600 7000 500 6000 400 5000 4000 300 3000 200 2000 100 1000 0 0 6 Datasheet 7 8 9 10 11 12 13 0 7 100 200 300 400 500 600 700 800 900 1000 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 4 Characteristics diagrams switching losses (typical), IGBT, Inverter E = f(RG) IC = 500 A, VCE = 3600 V, VGE = ± 15 V transient thermal impedance , IGBT, Inverter Zth = f(t) 100 9000 8000 7000 6000 10 5000 4000 3000 1 2000 1000 0 0 2 4 6 8 10 12 14 16 0.1 0.001 18 reverse bias safe operating area (RBSOA), IGBT, Inverter IC = f(VCE) RGoff = 10 Ω, VGE = ±15 V, Tvj = 125 °C 0.01 0.1 1 10 100 forward characteristic of (typical), Diode, Inverter IF = f(VF) 1200 1000 1100 900 1000 800 900 700 800 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0 Datasheet 1000 2000 3000 4000 5000 6000 7000 0.0 8 1.0 2.0 3.0 4.0 5.0 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 4 Characteristics diagrams switching losses (typical), Diode, Inverter Erec = f(IF) VCE = 3600 V, RGon = RGon(IGBT) switching losses (typical), Diode, Inverter Erec = f(RG) VCE = 3600 V, IF = 500 A 3000 2100 2700 1800 2400 1500 2100 1800 1200 1500 900 1200 900 600 600 300 300 0 0 0 100 200 300 400 500 600 700 800 900 1000 0.0 transient thermal impedance , Diode, Inverter Zth = f(t) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 6000 7000 safe operation area (SOA), Diode, Inverter IR = f(VR) Tvj = 125 °C 100 1200 1100 1000 900 800 10 700 600 500 400 1 300 200 100 0.1 0.001 Datasheet 0 0.01 0.1 1 10 0 100 9 1000 2000 3000 4000 5000 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 5 Circuit diagram 5 Circuit diagram Figure 1 Datasheet 10 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 6 Package outlines 6 Package outlines Figure 2 Datasheet 11 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module 7 Module label code 7 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 12 Revision 1.10 2021-10-25 FZ500R65KE3 Highly insulated module Revision history Revision history Document revision Date of release Description of changes V1.0 2009-04-06 Target datasheet V2.0 2010-12-13 Preliminary datasheet V2.1 2012-06-25 Preliminary datasheet V2.2 2012-08-22 Preliminary datasheet V3.0 2014-06-16 Final datasheet V3.1 2018-01-15 Final datasheet V3.2 2019-09-06 Final datasheet V3.3 2020-05-06 Final datasheet n/a 2020-09-01 Datasheet migrated to a new system with a new layout and new revision number schema: target or preliminary datasheet = 0.xy; final datasheet = 1.xy 1.10 2021-10-25 Final datasheet Datasheet 13 Revision 1.10 2021-10-25 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2021-10-25 Published by Infineon Technologies AG 81726 Munich, Germany © 2021 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAW363-009 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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